• Korean Journal of Optics and Photonics
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• v.12 no.5
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• pp.394-400
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• 2001

We studied thermal diffusion properties diffusion properties of multi-layered Ge-Sb-Te alloy thin films for optical recording media by solving the thermal equation. Based on the numerical analysis of optical energy distribution and absorption inside multi-layered films including temperature gradient and heat transfer simultaneously, we proposed the optimum parameters of the input laser power and the multi-layer structure as follow. i) Input laser power is 18 mW, ii) laser exposure time is 60 ns, iii) the thicknesses of the lower and the upper ZnS-SiO$_2$are 140 nm and 20~30 nm respectively, and iv) thickness of Ge-Sb-Te recording film is 20 nm.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.204-208
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• 1991

In this paper, the radiation properties of a far-Infrared using a PTC thermistor, the $BaTiO_3$+1.63mol% $Al_2O_3$+3.75mol% $SiO_2$+1.25mol% $TiO_2$(1/3 $Al_2O_3+xSiO_2$+(1-x) $TiO_2$; total x: 6.67mol%) ceramics, in order to progress the grade resistivity characteristics, by adding an ethanol solution of $Mn(NO_3){\cdot}6H_2O$ was investigated. The ceramics was fabricated by wet-mill method. The sintering temperature read 1300-1350$[^{\circ}C]$ and the holding time was 3 hours. The quantity of $Sb_2O_3$ and $Al_2O_3$ for an activation of the far-infrared radiation in ceramics was doped. In sintering, R-T property was measured by varying the grade temperature. The anatase-lighting apparatus and microstructures by using XRD and SEM were observed. $Sb_2O_3$. oxides additive. affected the semiconducting and emissivity and MnO was devoted an increase of resistivity. The specimen which only $Sb_2O_3$ is added to was high appeared far-infrared emissivity and Mno was not affacted the far-infrared radiation. The ceramics shows that it is effective in the structure of the human bodies as organic bodies and can be applied as electron device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.133-133
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• 2008

Recently, as the down-scailing of field-effect transistor devices continues, Schottky-barrier field-effect transistors (SB-FETs) have attracted much attention as an alternative to conventional MOSFETs. SB-FETs have advantages over conventional devices, such as low parasitic source/drain resistance due to their metallic characteristics, low temperature processing for source/drain formation and physical scalability to the sub-10nm regime. The good scalability of SB-FETs is due to their metallic characteristics of source/drain, which leads to the low resistance and the atomically abrupt junctions at metal (silicide)-silicon interface. Nevertheless, some reports show that SB-FETs suffer from short channel effect (SCE) that would cause severe problems in the sub 20nm regime.[Ouyang et al. IEEE Trans. Electron Devices 53, 8, 1732 (2007)] Because source/drain barriers induce a depletion region, it is possible that the barriers are overlapped in short channel SB-FETs. In order to analyze the SCE of SB-FETs, we carried out systematic studies on the Schottky barrier overlapping in short channel SB-FETs using a SILVACO ATLAS numerical simulator. We have investigated the variation of surface channel band profiles depending on the doping, barrier height and the effective channel length using 2D simulation. Because the source/drain depletion regions start to be overlapped each other in the condition of the $L_{ch}$~80nm with $N_D{\sim}1\times10^{18}cm^{-3}$ and $\phi_{Bn}$ $\approx$ 0.6eV, the band profile varies as the decrease of effective channel length $L_{ch}$. With the $L_{ch}$~80nm as a starting point, the built-in potential of source/drain schottky contacts gradually decreases as the decrease of $L_{ch}$, then the conduction and valence band edges are consequently flattened at $L_{ch}$~5nm. These results may allow us to understand the performance related interdependent parameters in nanoscale SB-FETs such as channel length, the barrier height and channel doping.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.115-118
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semoconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline stale are assigned to binary states. AST(AsSbTe) used to phase change material by applying electical pulses. Thickness of AST chalcogenide thin film have about 100nm. Electrodes are made of ITO and Al. $T_c$(Crystallization temperature) of AST system is lower than that of the GST(GeSbTe) system, so that the current pulse width of crystallization process can be decreased.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.154-154
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• 2009

• Journal of Environmental Health Sciences
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• v.43 no.2
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• pp.103-110
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• 2017

Objectives: This study was performed to provide basic data for the re-establishment of standards (criteria) and analytical methods for hazardous metals in nail enamel. Methods: Ten metals (lead; Pb, arsenic; As, cadminum; Cd, antimony: Sb, cobalt; Co, nikel; Ni, copper; Cu, chromium; Cr, aluminum; Al, and mercury; Hg) were measured in 67 commercial nail enamels containing glitter and/or pearls. The content of hazardous metals (excepting Hg) was determined by using an inductively coupled plasma-optical emission spectrophotometer (ICP-OES) after microwave digestion. Mercury content was measured by a mercury analyzer without any preparation. Results: The detected ranges of the intact samples were as follows: $ND-1.756{\mu}g/g$ for Pb, $ND-1.24{\mu}g/g$ for As, ND for Cd, $ND-20.41{\mu}g/g$ for Sb, $ND-12.36{\mu}g/g$ for Co, $ND-7.908{\mu}g/g$ for Ni, $0.088-79.27{\mu}g/g$ for Cu, $0.281-18.54{\mu}g/g$ for Cr, $13.78-3563{\mu}g/g$ for Al, and $ND-0.044{\mu}g/g$ for Hg. After centrifugation, the detected ranges of supernatant were as follows: $ND-0.435{\mu}g/g$ for Pb, $ND-0.504{\mu}g/g$ for As, ND for Cd, $ND-0.035{\mu}g/g$ for Sb, $ND-13.17{\mu}g/g$ for Co, $ND-0.232{\mu}g/g$ for Ni, $0.117-90.07{\mu}g/g$ for Cu, $0.174-2.787{\mu}g/g$ for Cr, and $9.459-1565{\mu}g/g$ for Al. The results of this analysis showed that the levels of heavy metals such as Pb, As, and Sb were much higher in the intact samples than those of supernatant. Conclusion: In the present study, we found that the levels of hazardous metals were significantly different depending on the status of the presence of glitter. Based on the results, we recommend that the product consumer refrain from prolonged application of nail enamel, avoid biting or chewing the nails, and wear gloves during cooking and washing dishes.

• Journal of Korean Society of Environmental Engineers
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• v.28 no.10
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• pp.1038-1045
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• 2006

A series of experiments was conducted to test the compatibilities of two different techniques to determine elemental concentrations by INAA and ICP-MS based on both the NIST SRM 2783(air particulate on filter media) and the field samples for PM10. For NIST SRM the results of INAA were more accurate and precise for all target elements than those of ICP-MS. The comparative data set for PM10 samples collected in an industrial complex area showed that mean of concentration ratio, derived for the two different methods such as C(INNA/ICP-MS), were distinguished from each other: (1) Ba, Cu, K Mg, Na, and Sb: $0.9{\sim}1.1$; (2) Al, Co, Fe, and Mn: $0.8{\sim}1.2$; and (3) Se, Ti, and Zn: >1.3. When the results obtained from both methods were evaluated in terms of regression analysis, paired t-test, and Wilcoxon signed-rank test, the results of many elements determined from PM10 samples(such as Al, Ba, Co, Cu, Fe, K, Mn, Nd, and Sb) exhibited a fairly good agreement between the two methods, despite a wide range of variation.

• Proceedings of the Korean Magnestics Society Conference
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• 2009.12a
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• pp.178-179
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• 2009

• Corrosion Science and Technology
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• v.10 no.6
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• pp.189-193
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• 2011

In the current paper, we are reporting the results from an investigation of the surface and sub-surface oxidation of a TRIP steel containing 2 wt.% Mn and 0.5 wt.% Al with and without 0.03 wt.% Sb. The oxidizing conditions in the gas were successively varied in terms of the linear gas flow-rate and dew-point, from conditions were gas-phase mass transport limited conditions prevailed, to those were solid state processes became the rate determining conditions. It was found, that at sufficient low oxidizing conditions (defined as flow-rate/dew-point), the metal surfaces were clear of any external oxides, and as the oxidizing conditions were increased, Mn- and Si- oxide nodules formed along with magnetite. As the oxidizing conditions were increased further, a dense magnetite layer was present. The limits of the various regions were experimentally quantified and a proposed hypothesis for their occurrences is presented. No obvious effect of Sb was noted in this micro-structural research of the oxides that results from the various conditions investigated in this study.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1057-1060
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• 2001

By comparison of the experimental results in two systems of ZnO varistors, its appear that Sb$_2$O$_3$is the indispensable element for twinning in ZnO varistors, and the Zn$_{7}$Sb$_2$O$_{12}$ spinel acts as the nucleus to form twins. A1$_2$O$_3$is not the origin of twinning in ZnO varistor, but it was found that A1$_2$O$_3$could strengthen the twinning and form a deformation twinning by ZnA$_{12}$O$_4$-dragging and pinning effect. The inhibition ratios of grain growth and nonuniformity of two systems ZnO varistors increase with the increase of A1$_2$O$_3$content. The twins affect the inhibition of grain growth, the mechanism could be explained follow as : twins increase the mobility viscosity of ZnO grain and grain boundary, and drag ZnO grain and liquid grain boundary during the sintering, then the grain growth is inhibited, and the microstructure becomes more uniform.orm.m.