• Applied Chemistry for Engineering
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• v.5 no.6
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• pp.1044-1055
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• 1994

The preparation of ZrC/SiC mixed powders from $ZrSiO_4/C$ and $ZrSiO_4/Al/C$ systems was attempted in the temperature range below $1600^{\circ}C$ under Ar or $Ar/H_2$ gas flow(100-500ml/min). The formation mechanism and kinetics of ZrC/SiC were suggested and the resultant powders were characterized. In $ZrSiO_4/C$ system, ZrC and SiC were formed by competitive reaction of $ZrO_2(s)$ and SiO(g) with carbon at temperature higher than $1400^{\circ}C$. The apparent activation energy for the formation of ZrC was approximately 18.5kcal/mol($1400-1600^{\circ}C$). In $ZrSiO_4/Al/C$ system, ZrC was formed by reaction of ZrO(g) with Al(l, g) and carbon at temperature higher than $1200^{\circ}C$, and SiC was formed by reduction-carbonization of SiO(g) with Al(l, g) and carbon at temperature higher than $1300^{\circ}C$. The products obtained at $1600^{\circ}C$ for 5h consisted of ZrC with lattice constant of $4.679{\AA}$ and crystallite size of $640{\AA}$, and SiC with lattice constant of $4.135{\AA}$ and crystallize size of $500{\AA}$. And also, the mean particle size was about $21.8{\mu}m$.

• Analytical Science and Technology
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• v.13 no.5
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• pp.584-591
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• 2000

The separation of Nd from the simulated $U_3Si/Al$ spent fuel solution with sequential two-step anion exchange separation has been studied. To prepare the simulated $U_3Si/Al$ spent nuclear fuel, unirradiated $U_3Si/Al$ whose composition consists of small $U_3Si$ particle dispersed in an Al matrix with Al cladding was dissolved with a mixture of 4 M HCl and 10 M $HNO_3$ and 8 or 15 fission product elements were added to the dissolved solution. The trace amount of silica in the solutions was removed by evaporating to dryness with HF and the U was adsorbed on the first anion exchange resin. Neodymium can be purely isolated from the fission product elements with a methanol-nitric acid eluent using the second anion exchange resin. A large excess of Al didn't influence on the elution velocity of Nd, but reduced the eluted contents of Nd, Al, Eu, Gd, Sm and Sr, A large amount of Al was removed first from the column with 3 mL of loading solution (0.8 M $HNO_3$/99.8% MeOH) before Nd elution by the eluent [0.04 M $HNO_3$-99.8% MeOH(1:9)]. The recovery of Nd was more than 94%, regardless of Al contents. Taking the 9 to 13 mL fraction of eluate was effective to purely isolate Nd.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2000.11a
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• pp.40-41
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• 2000

• Journal of the Korean institute of surface engineering
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• v.23 no.1
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• pp.34-43
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• 1990

Al-Si piston alloys such as AlS10CuMg have been anodized to examine apossibility of forming a hard film aat relatively higher temperatures compard with those in conventional sulfuric acid processes. Three types of electrolytes have been employed in this study ; electrolyte A(15% H2SO4, $0^{\circ}C$), electrolyte B(12% H2SO4, 1% oxalic, $10^{\circ}C$), electrolyte C(tartaric acid 125g/L+oxalic 75g/L+aluminum sulfate 225g/L, $25^{\circ}C$). Hard anodisine process in electrolyte B at a current density of 1.54A/dm2 produced a harder film of VHN 396 at a relatibely low film forming voltage compared with those obtained in other electrolyte at equivalent current density. A liner relationship between hardness and abrasion resistance exists for Al-Si piston alloys. The hardness of anodized film decreasees with increasing silicon content in Al-Si alloys and also with bath temperature. The film hardeness of Na-modified alloy os higher than that of P-modified alloy due to its finer microstructre. The film on the silicon phase in Al-Si alloys is observed to be formed by lateral growth of oxide film nucleated at surroundings.

• Journal of the Korean institute of surface engineering
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• v.54 no.5
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• pp.285-293
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• 2021

High-entropy TiAlCrSiN nano-composite coating was designed to improve mold life for high temperature liquid molding. Alloy design, powder fabrication and single alloying target fabrication for the high-entropy nano-composite coating were carried out. Using the single alloying target, an arc ion plating method was applied to prepare a TiAlCrSiN nano-composite coating had a 30 nm TiAlCrSiN layers are deposited layer by layer, and form about 4 ㎛-thickness of multi-layered coating. TiAlCrSiN nano-composite coating had a high hardness of about 39.9 GPa and a low coefficient of friction of less than about 0.47 in a dry environment. In addition, there was no change in the structure of the coating after the dissolution loss test in the molten metal at a temperature of about 1100 degrees.

• Journal of Korean Vacuum Science & Technology
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• v.7 no.2
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• pp.39-44
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• 2003

Recent ULSI and multilevel structure trends in microelectronic devices minimize the line width down to a quarter micron and below, which results in the high current densities in thin film interconnections. Under high current densities, an EM(electromigration) induced failure becomes one of the critical problems in a microelectronic device. This study is to improve thin film interconnection materials by investigating the EM characteristics in PSG(phosphosilicate glass)/SiO$_2$ passivated Al-l%Si thin film interconnections. Straight line patterns, wide and narrow link type patterns, and meander type patterns, etc. were fabricated by a standard photholithography process. The main results are as follows. The current crowding effects result in the decrease of the lifetime in thin film interconnections. The electric field effects accelerate the decrease of lifetime in the double-layered thin film interconnections. The lifetime of interconnections also depends upon the current conditions of P.D.C.(pulsed direct current) frequencies applied at the same duty factor.

• Journal of Power System Engineering
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• v.15 no.5
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• pp.72-76
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• 2011

In this work, the parameter optimization for thermal-sprayed Al/SiC composites have been designed by $L_9(3^4)$ orthogonal array and analysis of variance(ANOVA). Al/SiC composites were fabricated by flame spray process on steel substrate. The hardness of composites were measured using micro-vickers hardness tester, and these results were analyzed by ANOVA. The ANOVA results showed that the oxygen gas flow, powder feed rate and spray distance affect on the hardness of the Al/SiC composites. From the ANOVA results, the optimal combination of the flame spray parameters could be extracted. It was considered that experimental design using orthogonal array and ANOVA was efficient to determine optimal parameter of thermal-sprayed Al/SiC composites.

• Analytical Science and Technology
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• v.13 no.5
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• pp.601-607
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• 2000

Lanthanum has been used as one of the burnup monitor in spent nuclear fuel. $U_3Si/Al$ spent nuclear fuel contains small amount of La in high concentration of U and Al. Therefore, chemical separation of La is required to remove matrix elements. At first, ion chromatography (IC) and inductively coupled plasma systems were installed in radiation shielded glove box to handle the radioactive samples. Retention behavior of uranium, aluminum, lanthanum and some interesting fission products (Sr, Zr, Y, Mo, Ru, Pd, Rh, Cs, Ba, Ce, Pr, Nd, Sm, Eu and Cd) was investigated using the CG10 column and ${\alpha}$-HiBA eluent. As all elements were eluted earlier than lanthanum in 0.2 M ${\alpha}$-HiBA eluent, a portion of U and Al was directly passed to waste using a three way valve between the column and the nebulizer. Thus it was possible to determine the lanthanum in a high concentration of U and Al matrix. Retention time of La was about 12 minutes in this separation condition. Optimum range for the determination of La in $U_3Si/Al$ spent nuclear fuel was $1-10{\mu}g/L$ (ppb) with this system and detection limit was $0.25{\mu}g/L$ in case of $200{\mu}L$ of sample volume.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.29-34
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• 1993

a-Si : H photodiodes for image sensor have been fabricated and characterized. Photosensitivity of a ITO/a-Si : H/Al photodiode without blocking layer was 0.7 under the applied voltage of 5 V and peak spectral sensitivity in visible region was found at 620 nm. Dark current of ITO/a-SiN : H/a-Si : H/p-a-Si : H/Al photodiode was suppressed by hole blocking layer and electron blocking layer at the value of lower than 1.5 pA to the applied voltage of 10 V. Also maximum photosensitivity was about 1 under the applied voltage of 3 V and peak spectral sensitivity was found at 540 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 1993.02a
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• pp.44-45
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• 1993