• 한국전기전자재료학회논문지
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• 제29권5호
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• pp.279-283
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• 2016

In this study, we intended to achieve both antibacterial properties and electromagnetic shielding using the Al-doped ZnO (AZO) films. FTS (Facial Target Sputtering) magnetron sputtering was used for the AZO thin films instead of the conventional RF sputtering because the FTS sputtering could avoid the damage for the plasma as well as fabrication of thin films with a high quality. The 300-nm thick AZO thin films grown on glass substrate showed a resistivity of about $7{\times}10^{-4}{\Omega}-cm$ and a transmittance of about 90% at a wavelength of 550 nm. AZO thin films were investigated for the electromagnetic shielding effectiveness measured by 2-port network method at 1.5 ~ 3 GHz. The AZO (300 nm)/glass films showed an EMI shielding effectiveness of approximately 27 dB. An antibacterial effect was measured by the film attachment method (JIS Z 2801). The percent reductions of bacteria by AZO films were 99.99668% and 99.99999% against Staphylococcus aureus and Escherichia coli, respectively.

• 반도체디스플레이기술학회지
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• 제9권4호
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• pp.77-81
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• 2010

The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering and effects of working pressure and oxygen contents on the electrical properties were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM for the 70mTorr. From the surface analysis (AFM), the number of crystal grain of AZO thin film increased as working pressure increased. The film deposited with 70mTorr of working pressure showed n-type semiconductor characteristic having suitable resistivity $-1.59{\times}10^{-2}{\Omega}cm$, carrier concentration $-10.1{\times}10^{19}cm^{-3}$, and mobility $-4.35cm^2V^{-1}s^{-1}$ while other films by 7 mTorr, 20 mTorr of working pressure closed to metallic films. The films including the oxygen represent stoichiometric composition similar to the oxide. The transmittance of the film was over 85% in the visible light range regardless of the changes in working pressure and oxygen contents.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.61.2-61.2
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• 2011

본 연구에서는 박막 태양전지용 투명전극으로 사용하기 위해서 Gun-type RF 마그네트론 스퍼트링을 이용하였다. 챔퍼안의 타겟은 AZO타겟(Zn: 98[wt.%], Al:2[wt.%]을 장착하였고 공정압력은 고진공을 유지하였다. 온도는 $300^{\circ}C$로 고정하였고 전력은 70W로 고정하였다. $Ar^+$ 가스유량비를 20sccm~100sccm으로 변화를 주어 기판 위에 AZO를 증착하여 AZO의 구조적 및 광학적 특성의 의존성을 알아보았다. 모든 가스변화에서 400에서 700 nm까지의 가시광 영역에서의 AZO 박막의 평균 투과도는 약 85% 이상의 우수한 투과율을 보인다. AZO 박막 내의 결정 구조는 (002)면으로 우선 배향을 하는 wurtzite 구조를 가지며, $Ar^+$변화에 의해 두께가 증가하면서 결정립의 주상 (columnar) 성장이 향상되고 결정립의 크기도 증가한다. 이러한 경향성은 $Ar^+$변화에 의해 결정성이 향상된다는 것을 의미한다. 이와 같은 구조 및 광학 특성을 가지는 유리 기판 위에 증착된 AZO는 박막 태양전지용 투명 전극으로 응용이 가능할 것이다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2004년도 제27회 학술발표회 초록집
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• pp.259-259
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• 2004

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 춘계총회 및 연구발표회 초록집
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• pp.192.1-192
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• 2003

• 한국재료학회지
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• 제20권5호
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• pp.235-240
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• 2010

We investigated the carbon monoxide (CO) gas-sensing properties of nanostructured Al-doped zinc oxide thin films deposited on self-assembled Au nanodots (ZnO/Au thin films). The Al-doped ZnO thin film was deposited onto the structure by rf sputtering, resulting in a gas-sensing element comprising a ZnO-based active layer with an embedded Pt/Ti electrode covered by the self-assembled Au nanodots. Prior to the growth of the active ZnO layer, the Au nanodots were formed via annealing a thin Au layer with a thickness of 2 nm at a moderate temperature of $500^{\circ}C$. It was found that the ZnO/Au nanostructured thin film gas sensors showed a high maximum sensitivity to CO gas at $250^{\circ}C$ and a low CO detection limit of 5 ppm in dry air. Furthermore, the ZnO/Au thin film CO gas sensors exhibited fast response and recovery behaviors. The observed excellent CO gas-sensing properties of the nanostructured ZnO/Au thin films can be ascribed to the Au nanodots, acting as both a nucleation layer for the formation of the ZnO nanostructure and a catalyst in the CO surface reaction. These results suggest that the ZnO thin films deposited on self-assembled Au nanodots are promising for practical high-performance CO gas sensors.

• 한국세라믹학회지
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• 제32권7호
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• pp.799-808
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• 1995

Transparent conductive films of aluminium doped zinc oxide (AZO) have been prepared by using the DC magnetron sputtering with the ZnO : Al (Al2O3 2 wt%) oxide target oriented to c-axis. Electrical and optical properties depended upon the O2/Ar gas ratio. The optical transmittance and sheet resistance of the AZO coated glass was 60~65% and 75Ω/$\square$, respectively at the O2/Ar gas ratio of 0. With the increase of the oxygen partial pressure to 2.0$\times$10-2, they were increased to the values of 81% and 1kΩ/$\square$, respectively. The films with the resistivities of 1.2~1.4$\times$10-3 Ω.cm, mobilities of 11~13 $\textrm{cm}^2$/V.sec and carrier concentrations of 3.5$\times$1020~4.0$\times$1020/㎤ were produced at the optimum O2/Ar gas ratio, which was 0.5$\times$10-2~1.0$\times$10-2. According to XRD analysis, the films have only one peak corresponding to the (002) plane, which indicates that there is a strong preferred orientation of the films. The grain size of ZnO films were calculated to 200~320 $\AA$, which was increased with the O2/Ar gas ratio and Ar gas flowrate.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.426.1-426.1
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• 2014

For high performance thin film solar cells, texturing surface, enhancing the optical absorptionpath, is pretty important. Textured ZnO:Al transparent oxide layer of high haze is commonly used in Si thin film solar cells. In this paper, novel deposition method for aluminum doped zinc oxide (ZnO:Al) on glass substrates is presented to improve the haze property. The broccoli structure of ZnO:Al layer was formed on chemically etched glass substrates, which showed high haze value on a wide wavelength range.The etching condition of the glass substrates can change not only the haze values of the ZnO:Al of in-situ growth but alsothe electrical and optical properties of the deposited ZnO:Al films.The etching mechanism of the glass substrate affecting on the surface morphology of the glass will be discussed, which resulted in variation of texture of ZnO:Al layer. The optical properties of substrate morphology were also analyzed with EDS and FTIR results. As a result, the high haze value of 85.4% was obtained in the wavelength range of 300 nm to 1100 nm. Furthermore, low sheet resistance of about 5~18 ohm/sq was achieved for different surface morphologies of the ZnO:Al films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.133-134
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• 2007

We have studied the structural and electrical, optical properties of Al doped ZnO(AW) thin films which were fabricated by If reactive magnetron sputtering method with various heat treatment conditions. The heat temperatures of specimen fabrication were comning 7059 glass is $200{\sim}500^{\circ}C$ and Polyimide films are $200{\sim}350^{\circ}C$ respectively. The variations of the electrical and optical properties with heat treatment temperature and ambient were studied.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.62-65
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• 2002

Transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Coming 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCl (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures $({\leq}300^{\circ}C)$, the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.