• Electrical & Electronic Materials
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• v.10 no.6
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• pp.570-575
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• 1997

In this days, the thinner film of dielectric materials is required while its capacitance is required to be still large at the VLSI process. Most of such VLSI have MOS structures. For the research on this requirement, MOS capacitors were fabricated on the silicon wafer in four different thickness groups by RF sputtering method. SiO of the SiO/TiN film is used as the insulating layer and TiN is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TiN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of its relatively low specific resistance. In this study their electrical and optical characteristics are investigated to find refractive index, absorption coefficient and Permittivity.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.581-584
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• 2003

The austenitic STS 304 stainless steel was turned to clarify the effects of tool geometry on the tool wear. The wear of TiN-TiCN-TiC-TiAlN coated tungsten carbide tool was the smallest, exhibiting larger wear in the order of Si-Al-O-N ceramic, TiN coated tungsten carbide, TiN-TiCN-TiN coated tungsten carbide, TiC-TiN cermet and M20 tungsten carbide tools at the same cutting conditions. The S-type tool of M20 with large approach angle showed the longest tool life of all tools used in this tests due to preventing the groove wear of the side cutting edge. The wear of the S-type tool with the rake angle of 15$^{\circ}$became smaller than with that of -5$^{\circ}$, but the tool with the nose radius of 0.8mm did not perform much better with increasing the rake angle.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.10
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• pp.56-64
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• 2003

The effect of tool geometry on the tool wear in turning the austenitic stainless steel, STS 304 was investigated. The wear of TiN-TiCN-TiC-TiAlN coated tungsten carbide tool was the smallest, showing larger wear in the order of Si-Al-O-N ceramic, TiN coated tungsten carbide, TiN- TiCN- TiN coated tungsten carbide, TiC-TiN cermet and M20 tungsten carbide tools at the same cutting conditions. The S-type tool of M20 with the larger side cutting edge angle showed the smallest tool wear in all tests due to preventing the groove wear of the side cutting edge. The wear of the S-type tool with the rake angle of $15^{\circ}$ became smaller than with that of $-5^{\circ}$, but the tool with the nose radius of 0.8mm did not perform much better with increasing the rake angle.

• Journal of the Korean Ceramic Society
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• v.32 no.9
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• pp.977-988
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• 1995

Several oxide (ZrO2, Al2TiO5, reactive Al2O3) and nonoxide (SiC, Si3N4, "ALON" (5AlN.9Al2O3)) additives were used as a microfiller for alumina based LCC (Low-Cement-Castable). High temperature prooperties (HMOR, softening under load) and the phase changes of developed LCC on various sintering temperatures were examined. In addition, thermal shock test and corrosion test were accomplished. Based on these data the effects of each microfiller on the properties of LCC were established comparing to those of the commercial LCC with amorphous silica as a microfiller. The castables, containing reactive alumina, ZrO2 and "ALON" (5AlN.9Al2O3) as a first portion, exhibited considerably higher HMOR-values over 100$0^{\circ}C$, better creep behavior, and thermal shock resistance than those of castables with amorphous silica. The LCC with 5% Al2TiO5 showed no corrosion against molten aluminum.nst molten aluminum.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.213-213
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• 2014

$300^{\circ}C$와 $500^{\circ}C$에서 아크 이온 증착된 도포층의 조성은 각각 Fe : Al : Ti : Si : N = 1.31 : 36.52 : 31.31 : 0.48 : 30.38 [wt.%]와 Fe : Cr : Al : Ti : Si : N = 1.24 : 0.56 : 36.82 : 32.72 : 0.59 : 28.07 [wt.%] 이었다. 0.1N $H_2SO_4$ 수용액과 인공해수 (ASTM D1141-98) 분위기에서 $300^{\circ}C$, $500^{\circ}C$에서 증착된 도포층의 부식전압과 부식속도는 각각 $-0.2787V_{SHE}$, $0.002A/cm^2$, $-2.764V_{SHE}$, $0.002A/cm^2$ 와 $-0.2799V_{SHE}$, $0.002A/cm^2$, $-0.0394V_{SHE}$, $0.002A/cm^2$이었다. 나노 경도값은 각각 23.6, 25.8 GPa 이었다. 이는 각각 2208.2, $2434.2H_V$에 해당되었다.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1545-1551
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• 1994

Various kinetic parameters of the nucleation and crystallization in anorthite glass (CaO.Al2O3.2SiO2) were calculated by nonisothermal differential thermal analysis. Base glass and glass with TiO2 were prepared by melting. In base glass, the temperature where nucleation can occur ranges from 85$0^{\circ}C$ to 9$25^{\circ}C$ and the temperature for maximum nucleation was 900$\pm$5$^{\circ}C$. In glass with TiO2, the nucleation temperature range was 800~875$^{\circ}C$ and the maximum nucleation temperature was 850$\pm$5$^{\circ}C$. Kissinger equation, Bansal equation, and modified Ozawa equation were used for calculating activation energy for crystallization, Ec. The results showed the same activation energies for both glasses with and without TiO2 in the different equations. The shape of maximum exotherm peak and Ozawa equation were used for Avrami exponent, n. The n value for each glass was 2, indicating that each glass crystallized primarily by bulk crystallization.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.9 no.6
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• pp.170-177
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• 2000

Dense $Al_2$O$_3$-30%TiC and Si$_3$N$_4$ ceramic tool materials with various grain size were produced by sintering-HIP treatment and by gas-pressure sintering. The fracture toughness was measured by indentation fracture and indentation strength method for both ceramics with various grain size. The effect of the grain size on the fracture toughness was evaluated, and the correlation between fracture toughness and mechanical properties such as hardness, Young\`s modulus and flexural strength of these ceramic were also investigated. The highest fracture toughness of around 6.7 MPa.m(sup)1/2 was obtained in Si$_3$N$_4$ ceramics with grain size of 1.58${\mu}{\textrm}{m}$. With a larger grain size of $Al_2$O$_3$-30%TiC and Si$_3$N$_4$ ceramics, the fracture toughness was generally increased. The increased fracture toughness of these ceramic also improved the flexural strength although the hardness decreased considerably. Similar results were obtained in grain size and mechanical properties on both $Al_2$O$_3$-30%TiC and Si$_3$N$_4$ ceramic tool materials.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.27-27
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• 2003

무가압침투법으로 제조된 부피분율 10~24% SiC, TiC, B$_4$C 탄화물 입자강화 7075 Al 합금 기지 복합재료의 건식 미끄럼 마멸거동을 강화입자의 종류, 크기 및 부피 분율을 변수로 연구하였다. 미끄럼 마멸 시험은 pin-on-disk 형태의 마멸 시험기를 사용하여, AISI 52100 베어링강을 상대재로 상온 대기 중에서 실시되었다. 마멸특성의 분석과 마멸기구의 규명을 위하여 마멸면과 마멸단면을 SEM, EDS를 이용하여 분석하였다. 제조된 복합재료의 압축 시험을 통하여 측정된 항복강도와 가공경화지수는 서로 반비례하였고, 각 시편간의 경도 차는 크지 않았다. 마멸 시험결과, 크기 및 부피 분율이 7$\mu\textrm{m}$ !0%인 SiC 입자로 강화된 복합재료를 제외하고, 전체 복합재료 시편은 7075 Al 기지 합금에 비해 낮은 마멸 속도를 보였다. 10N 이하의 저하 중에서는 강화상의 종류와 상관없이 복합재료는 낮은 마멸 속도를 보였고, 25N 이상의 고하중에서는 TiC 입자강화 복합재료가 가장 낮은 마멸 속도를, SiC 입자강화 복합재료가 가장 높은 마멸 속도를 나타내었다. 강화 입자의 크기 및 부피 분율이 동일한 경우 SiC 입자로 강화된 복합재료가 가장 낮은 내마멸성을 나타내었다. 강화상의 크기 및 부피 분율이 증가함에 따라 미소 마멸에서 격렬 마멸로의 천이 하중이 증가하였다.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.218-227
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• 2003

Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au ohmic contacts to n-type InCaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Si/Ti/Pt ohmic contact, as-deposited contact showed non-ohmic behavior, and high specific contact resistivity of $5\times10^{-3}\Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $375^{\circ}C$/10 sec. However, the specific contact resistivity decreased remarkably to $2\times10^{-6}\Omega\textrm{cm}^2$ by annealing at $425^{\circ}C$/10sec. In the Pd/Si/Pd/Ti/Au ohmic contact, minimum specific contact resistivity of $3.9\times10^{-7}\Omega\textrm{cm}^2$ was achieved by annealing at $400^{\circ}C$/20sec. In both ohmic contacts, low contact resistivity and non-spiking planar interface between ohmic materials and InGaAs were maintained. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.9 ㎓ and 74.4 ㎓, respectively, and maximum oscillation frequencies were 50.1 ㎓ and 52.5 ㎓, respectively. It shows very successful high frequency operations.

• Proceedings of the KAIS Fall Conference
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• 2001.05a
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• pp.40-46
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• 2001

The thermal stability of $Al_2TiO_{5}$ ceramics was improved by formation of solid solution with MgO, such as $MgAl_2O_4$ spinel through electrofusion in an arc furnance, and by limitation of grain size and microcracks with $SiO_2$, $ZrO_2$ and ${\alpha}$-$Al_2O_3$. The low thermal expansion properties of $Al_2TiO_{5}$ composites show the thermal hysteresis curves due to the strong anisotropy of $Al_2TiO_{5}$. These phenomena are explained by the opening and closing of microcracks. The relation between thermal hysteresis, microstructures and sintering temperature were studied by dilatometry.