• Title/Summary/Keyword: Al-SiC

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Microstructure and Mechanical Properties of (SiC)p/Al Composite Fabricated by a Powder-in Sheath Rolling Method (분말피복압연법에 의해 제조된 (SiC)p/Al 복합재료의 미세조직 및 기계적 성질)

  • 이성희;이충효
    • Journal of Powder Materials
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    • v.11 no.3
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    • pp.259-264
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    • 2004
  • Aluminum based metal matrix composite reinforced with SiC particles was fabricated by the powder-in sheath rolling method. A stainless steel tube with outer diameter of 12 mm and wall thickness of 1mm was used as a sheath. Mixture of aluminum powder and SiC particles of which volume content was varied from 5 to 20vol.% was filled in the tube by tap filling and then rolled to 75% reduction at ambient temperature. The rolled specimen was sintered at 56$0^{\circ}C$ for 0.5hr. The tensile strength of the (SiC)$_{p}$/Al composite increased with the volume content of SiC particles, and at 20vol.% it reached a maximum of 100㎫ which is 1.6 times higher than unreinforced material. The elongation decreased with the volume content of $Al_{2}$O$_{3}$ particles. The mechanical properties of the (SiC)$_{p}$/Al composite fabricated by the powder-in sheath rolling is compared with that of (Al$_{2}$O$_{3}$)$_{p}$/Al composite by the same process.ess.

Electrical Characteristics of Ni/Ti/Al Ohmic Contacts to Al-implanted p-type 4H-SiC (Al 이온 주입된 p-type 4H-SiC에 형성된 Ni/Ti/Al Ohmic Contact의 전기적 특성)

  • Joo, Sung-Jae;Song, Jae-Yeol;Kang, In-Ho;Bahng, Wook;Kim, Sang-Cheol;Kim, Nam-Kyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.11
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    • pp.968-972
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    • 2008
  • Ni/Ti/Al multilayer system ('/'denotes the deposition sequence) was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Ni 30 nm / Ti 50 nm / Al 300 nm layers were sequentially deposited by e-beam evaporation on the 4H-SiC samples which were implanted with Al (norminal doping concentration = $4\times10^{19}cm^{-3}$) and then annealed at $1700^{\circ}C$ for dopant activation. Rapid thermal anneal (RTA) temperature for ohmic contact formation was varied in the range of $840\sim930^{\circ}C$. Specific contact resistances were extracted from the measured current vs. voltage (I-V) data of linear- and circular transfer length method (TLM) patterns. In constrast to Ni contact, Ni/Ti/Al contact shows perfectly linear I-V characteristics, and possesses much lower contact resistance of about $2\sim3\times10^{-4}\Omega{\cdot}cm^2$ even after low-temperature RTA at $840^{\circ}C$, which is about 2 orders of magnitude smaller than that of Ni contact. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance. X-ray diffraction (XRD) analysis indicated the existence of intermetallic compounds of Ni and Al as well as $NiSi_{1-x}$, but characteristic peaks of $Ti_{3}SiC_2$, a probable narrow-gap interfacial alloy responsible for low-resistance Ti/Al ohmic contact formation, were not detected. Therefore, Al in-diffusion into SiC surface region is considered to be the dominant mechanism of improvement in conduction behavior of Ni/Ti/Al contact.

Improvement of Mechanical Properties of P/M Processed $2XXX Al-SiC_w$ Composites ($2XXX Al-SiC_w$ 복합재료의 분말야금 제조와 기계적 성질 향상 연구)

  • 신기삼
    • Journal of Powder Materials
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    • v.2 no.3
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    • pp.238-246
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    • 1995
  • The purpose of this study is to establish powder metallurgy (P/M) fabrication processes for high performance 2XXX Al composites reinforced with SiC whiskers. Rapidly solidified 2XXX Al powders produced by commercial atomization technique were mixed with SiC whiskers. The results of mixing processes indicated that fluidized zone mixing technique was considerably effective for the large scale production of the mixture of Al powders and whiskers. In order to consolidate these $Al-SiC_w$ mixtures into $Al-SiC_w$ composite billets, a vacuum hot press was set up, and hot processing variables were investigated. Using the hot pressing temperature of $620^{\circ}C$ under the pressure of 50 MPa, good quality $Al-SiC_w$ composite billets having relatively homogeneous microstructure and sound Al/sic interfacial bonding were obtained. Composite billets were then extruded to bars having relatively homogeneous microstructures at the extrusion temperature of 450~500$^{\circ}C$ under the extrusion pressure of 700~ 1000 MPa. Mechanical properties of the extruded bars were found to be comparable with those of the composite processed by Advanced Composite Materials Corp. To improve mechanical properties of the composites, elimination of coarse intermetallic compounds, uniform distribution of reinforcements, and minimization of whisker breakage are suggested.

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Preparation of AlN/SiC Whisker Composite by Reaction Sintering Process (반응소결법에 의한 AlN/SiC 휘스커 복합체의 제조)

  • 박정현;김용남;유재영;강민수
    • Journal of the Korean Ceramic Society
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    • v.36 no.2
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    • pp.193-202
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    • 1999
  • Al powder, AlN powder, SiC whisker and sintering aids were wet-mixed, and then the specimens prepared with mixed powder were reacted by nitridation at 600∼1400$^{\circ}C$ for 5 hrs. It was cleat that the higher nitridation and the more SiC whisker content were, the better bending strength was. The specimen of Al50/AlN50 reacted at 1400$^{\circ}C$ for 5hrs had the nitridation percent of 97%, the shrinkage under 2%, and the relative density of 78%. And the maximum bending strength of reaction-bonded specimen was 250 MPa. The specimens completely nitrided were post-sintered at 1700, 1800 and 1900$^{\circ}C$ for 2hrs. The post-sintered body had the shrinkage under 6% and the relative density of 86%. Because of the formation of solid solution between AlN and SiC whisker over 1800$^{\circ}C$, the promotion of mechanical properties according to SiC whisker addition was not observed. The post-sintered body had the maximum bending strength of 195 MPa.

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High Temperature Oxidation of Ti3Al/SiCp Composites in Oxygen

  • An, Sang-Woo;Kim, Young-Jig;Park, Sang-Whan;Lee, Dong-Bok
    • The Korean Journal of Ceramics
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    • v.5 no.1
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    • pp.44-49
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    • 1999
  • In order to improve the oxidation resistance of $Ti_3Al$, Ti-25at.%Al composites containing dispersed particles of 15wt.%SiC were prepared by a tubular mixing-spark plasma sintering method. The sintered composites had $Ti_3Al$, SiC, $Ti_5Si_3$ and TiC. The presence of $Ti_5Si_3$ and TiC indicates that some of SiC particles reacted with Ti to from more stable phases. From oxidation tests at 800, 900 and $1000^{\circ}C$ under 1 atm of pure oxygen, it was found that the oxidation rate of Ti3Al was effectively reduced by the addition of SiC. The scale was primarily composed of an outer $TiO_2$ layer having some $Al_2O_3 $islands, an intermediate relatively thick $Al_2O_3 $ layer, and an inner $TiO_2+Al_2O_3+SiO_2$ mixed layer. Beneath the scale, Kirkendall voids were seen.

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Thermal Residual Stress Relaxation Behavior of Alumina/SiC Nanocomposites (Alumina/SiC 나노복합재료에서의 잔류 열응력 완화거동에 관한 연구)

  • Choa, Y.H.;Niihara, K.;Ohji, T.;Singh, J.P.
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2002.04b
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    • pp.11-11
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    • 2002
  • Plastic deformation was observed by TEM around the intragranular SiC particles in the $Al_2O_3$ matrix for $Al_2O_3/SiC$ nanocomposite system. The dislocations are generated at selected planes and there is a tendency for the dislocations to form a subgrain boundary structure with low-angel grain boundaries and networks. In this study, dislocation generated in the $Al_2O_3$ matrix during cooling down from sintering temperatures by the highly localized thermal stresses within and/or around SiC particles caused from the thermal expansion mismatch between $Al_2O_3$ matrix and SiC particle was observed. In monolithic $Al_2O_3$ and $Al_2O_3/SiC$ microcomposite system. These phenomena is closely related to the plastic relaxation of the elastic stress and strain energy associated with both thermal misfitting inclusions and creep behaviors. The plastic relaxation behavior was explained by combination of yield stress and internal stress.

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Effect of 3C-SiC buffer layer on the characteristics of AlN films supttered on Si Substrates (3C-SiC 버퍼층이 Si 기판위에 스퍼터링된 AlN 막의 특성에 미치는 영향)

  • Ryu, Kyeong-Il;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.04b
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    • pp.3-6
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    • 2009
  • Aluminum nitride (AIN) thin films were deposited on a polycrystalline 3C-SiC intermediate layer by a pulsed reactive magnetron sputtering system. Characteristics of the AIN/SiC heterostructures were investigated by field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FT-IR). The columnar structure of AIN thin films was observed by FE-SEM. The surface roughness of AlN films on the 3C-SiC buffer layer was measured using AFM. The XRD pattern of AlN films on SiC buffer layers was highly oriented at (002). Full width at half maximum (FWHM) of the rocking curve near (002) reflections was $1.3^{\circ}$. The infrared absorbance spectrum indicated that the residual stress of AIN thin films grown on SiC buffer layers was nearly negligible. The 3C-SiC intermediate layers are promising for the realization of nitride based electronic and mechanical devices.

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Thermostability of Monolithic and Reinforced Al-Fe-V-Si Materials

  • He, Yiqiang;Qiao, Bin;Wang, Na;Yang, Jianming;Xu, Zhengkun;Chen, Zhenhua;Chen, Zhigang
    • Advanced Composite Materials
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    • v.18 no.4
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    • pp.339-350
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    • 2009
  • Al-Fe-V-Si alloys reinforced with SiC particles were prepared by multi-layer spray deposition technique. Both microstructures and mechanical properties including hardness and tensile properties development during hot exposure process of Al-8.5Fe-1.3V-1.7Si, Al-8.5Fe-1.3V-1.7Si/15 vol% $SiC_P$ and Al-10.0Fe-1.3V-2Si/15 vol% $SiC_P$ were investigated. The experimental results showed that an amorphous interface of about 3 nm in thickness formed between SiC particles and the matrix. SiC particles injected silicon into the matrix; thus an elevated silicon concentration was found around $\alpha-Al_{12}(Fe,\;V)_3Si$ dispersoids, which subsequently inhibited the coarsening and decomposition of $\alpha-Al_{12}(Fe,\;V)_3Si$ dispersoids and enhanced the thermostability of the alloy matrix. Moreover, the thermostability of microstructure and mechanical properties of Al-10.0Fe-1.3V-2Si/15 vol% $SiC_P$ are of higher quality than those of Al-8.5Fe-1.3V-1.7Si/15 vol% $SiC_P$.

Preparation of SiC-Al alloy Composite by Pressureless Powder Packing Forming Method (분말 충전 성형법을 이용한 SiC-Al Alloy 복합체의 제조)

  • 박정현;송준광;백승수;염강섭;강민수
    • Journal of the Korean Ceramic Society
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    • v.34 no.4
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    • pp.343-350
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    • 1997
  • To fabricate the ceramic/metal(SiC/ Al alloy) composite, SiC preform was prepared by Pressureless Powder Packing Forming Method and 6061 Al alloy was infiltrated into the preform. Uniform compact having an average pore size of 10 ${\mu}{\textrm}{m}$ and narrow pore size distribution was prepared. Phenolic resin solution(40 wt%) was penetrated into the SiC compact, and then the compact was preheated at the temperature of 120$0^{\circ}C$. The pore size distribution and the microstructure of the preform were not changed by preheating. An uniform microstructure without any crack in the preform was obtained in SiC-Al alloy composite. The infiltration of 6061. Al alloy into the preform began at the temperature of 130$0^{\circ}C$ and the amount of infiltration increased in proportion to the infiltration temperature and the soaking time. The increasement rate of the infiltration amount decreased after 3 h. As a result of the infiltration at 140$0^{\circ}C$ for 4 h, Al alloy was well distributed in the interparticle channels and the relative density of the composite was above 98%. The strength and the fracture toughness of the composite were 303 MPa and 21.65 MPam1/2, respectively.

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Formation of Solid Solution and Microstructure in Processureless sintered SiC-AlN Composite (상압소결에 의하여 제조된 SiC-AlN 복합체에서의 고용체 형성과 미세구조)

  • Lee, Jong-Kook;Kim, Duk-Jun;Kim, Hwan
    • Journal of the Korean Ceramic Society
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    • v.33 no.7
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    • pp.785-792
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    • 1996
  • Formation of Solid Solution and Microstructure in Processureless sintered SiC-AlN compo-site using oxides as a sintering aid at 185$0^{\circ}C$ and 195$0^{\circ}C$ Regardless of SiC/AlN ratio in composition most of sintered specimens showed he complex structure mixed with 2H solid solution and SiC particles. High sintering temperature and large AlN content in starting composition enhanced the formation of 2H solid solution in sintered specimen 2H solid solution showed the spherical shape and core-rim structure. AlN content in the core is higher than that in the rim but SiC content . The size of 2H solid solution on fracture showed the transgranular fracture mode compared with the dispersed SiC particles which showed the intergranular fracture mode.

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