• Journal of the Korean Ceramic Society
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• v.34 no.4
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• pp.406-412
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• 1997

Al2O3/SiC hybrid-composite has been fabricated by the conventional powder process. The addition of $\alpha$-Al2O3 as seed particles in the transformation of ${\gamma}$-Al2O3 to $\alpha$-Al2O3 provided a homogeneity of the microstructure. The grain growth of Al2O3 are significantly surpressed by the addition of nano-size SiC particles. Dislocation were produced due to the difference of thermal expansion coefficient between Al2O3 and SiC and piled up on SiC particles in Al2O3 matrix, resulting in transgranular fracture. The high fracture strength of the composite was contributed to the grain refinement and the transgranular fracture mode. The addition of SiC platelets to Al2O3/SiC nano-composite decreased the fracture strength, but increased the fracture toughness. Coated SiC platelets with nitrides such as BN and Si3N4 enhanced fracture toughness much more than non-coated SiC platelets by enhancing crack deflection.

• Journal of Powder Materials
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• v.7 no.1
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• pp.35-41
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• 2000

Al2O3$.$SiC particle was prepared was prepared by the self-propagting high temperature sYthesis(SHS) process from a mixture of SiO2, Al and C powders, The fabricated Al2O3$.$SiC particle was applied to 2024Al/(Al2O3$.$SiC)pcomposite as a reinforcement. Aluminum matix composites were fabricares by the powder extrusion method using the synthesized Al2O3$.$SiC particle and commercial 2024Al powder. Theoptimum preparation conditions for Al2O3$.$SiC partticle by SHS process were described. The influence of the Al2O3$.$SiC voiume fraction on the mechanical was composite was also discussed. Despite adiabatic temperature was about 2367K, SHs reaction was completed not by itself, but by using pre-heating. Mean particle size of final particle synthesized was 0.73 ${\mu}$m and most of the particle was smaller than 2${\mu}$m. Elastic modulus and tensile strength of the composite increased with increase the volume fraction of reinforcement but, tensile strength depreciated at 30 vol% of reinforcement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.235-235
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• 2009

This paper describes the influence of a polycrystalline (poly) 3C-SiC buffer layer on the surface acoustic wave (SAW) properties of poly aluminum nitride (AlN) thin films by comparing the center frequency, insertion loss, the electromechanical coupling coefficient ($k^2$), andthetemperaturecoefficientoffrequency(TCF) of an IDT/AlN/3C-SiC structure with those of an IDT/AlN/Si structure, The poly-AlN thin films with an (0002)-preferred orientation were deposited on a silicon (Si) substrate using a pulsed reactive magnetron sputtering system. Results show that the insertion loss (21.92 dB) and TCF (-18 ppm/$^{\circ}C$) of the IDT/AlN/3C-SiC structure were improved by a closely matched coefficient of thermal expansion (CTE) and small lattice mismatch (1 %) between the AlN and 3C-SiC. However, a drawback is that the $k^2(0.79%)$ and SAW velocity(5020m/s) of the AlN/3C-SiC SAW device were reduced by appearing in some non-(0002)AlN planes such as the (10 $\bar{1}$ 2) and (10 $\bar{1}$ 3) AlN planes in the AlN/SiC film. Although disadvantages were shown to exist, the use of the AlN/3C-SiC structure for SAW applications at high temperatures is possible. The characteristics of the AlN thin films were also evaluated using FT-IR spectra, XRD, and AFM images.

• Journal of the Korean institute of surface engineering
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• v.42 no.2
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• pp.73-78
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• 2009

Quinary Ti-Al-Si-C-N films were successfully synthesized on SUS 304 substrates and Si wafers by a hybrid coating system combining an arc ion plating technique and a DC reactive magnetron sputtering technique. In this work, the effect of Si content on the microstructure and mechanical properties of Ti-Al-C-N films were systematically investigated. It was revealed that the microstructure of Ti-Al-Si-C-N coatings changed from a columnar to a nano-composite by the Si addition. Due to the nanocomposite microstructure of Ti-Al-Si-C-N coatings, the microhardness of The Ti-Al-Si-C-N coatings significantly increased up to 56 GPa. In addition the average friction coefficients of Ti-Al-Si-C-N coatings were remarkably decreased with Si addition. Therefore, Ti-Al-Si-C-N coatings can be applicable as next-generation hard-coating materials due to their improved hybrid mechanical properties.

• Journal of Korea Foundry Society
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• v.13 no.4
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• pp.350-358
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• 1993

Aluminum base composites reinforced with various amount of SiC particles and Mg contents have been investigated by different fabrication method for twenty-years. In this paper, how the decomposition and dissolution behaviors of $SiCp(20{\mu}m)$ in the melt of Al composites arised was studied. As the results, the decomposition and dissolution of SiCp into the melt of Al composites increased with increase of the temperature above $720^{\circ}C$, and holding time at a given melting temperature. Because SiC is thermodynamically unstable in this Al-SiCp composite at temperature above the liquidus, SiCp dissolves and reacts with Al in matrix to form $Al_4C_3$ according to following chemical equation $4Al+3SiC{\rightarrow}Al_4C_3+3Si$, Si decomposed and dissolved from SiCp increases Si content of matrix, while liquidus temperature of matrix decrease with increase of SiC content in matrix. The hardness of SiCp decreased with increase of the melting temperature, the hardness of the matrix /particle interface increased with increase of the melting temperature due to increase of the $Mg_2Si$ and $Al_4C_3$ intermetallic compounds, etc.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.398-404
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• 2001

Effects of coating treatment of metallic Cu film on SiC for Al/SiC composite were studied. The Copper was deposited on SiC by electroless plating method. Al/sic composite was fabricated at temperature range of $670^{\circ}C$ to 90$0^{\circ}C$ under vacuum atmosphere. The wetting behavior of Al/SiC composite were analysed by SEM and XRD. The coating treatment on SiC improved wettability of Al melt on SiC considerably comparing to the non coated SiC. This improved wettability seems strongly concerned to the increase of chemical reactivity between coated layer and Al matrix. The improvement of wettability of Al melt on the Cu coated SiC was closely related to in the initial stage of reaction. The metallic film played an important role in reducing the interfacial free energy and breaking down the aluminum oxide film through the reaction with Al melt. The wetting behavior of the as-received SiC with Al melt was not uniform, indicated by the contact angles from less than $97^{\circ}$to more than $97^{\circ}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.93-93
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• 2008

This paper presents the Raman scattering characteristics of poly (polycrystalline) 3C-SiC thin films deposited on AlN buffer layer by atmospheric pressure chemical vapor deposition (APCVD) using hexamethyldisilane (MHDS) and carrier gases (Ar + $H_2$).The Raman spectra of SiC films deposited on AlN layer of before and after annealings were investigated according to the growth temperature of 3C-SiC. Two strong Raman peaks, which mean that poly 3C-SiC admixed with nanoparticle graphite, were measured in them. The biaxial stress of poly 3C-SiC/AlN was calculated as 896 MPa from the Raman shifts of 3C-SiC deposited at $1180^{\circ}C$ on AlN of after annealing.

• Journal of the Korean Ceramic Society
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• v.32 no.10
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• pp.1212-1218
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• 1995

Al2O3-coated SiC composite powder and mechanically mixed Al2O3-SiC composite powder were synthesized using Al-isopropoxide and commercial SiC as the starting materials. Experiment results showed that the sinterability of Al2O3-coated SiC composite powder was more improved than the mechanically mixed Al2O3-SiC composite powder by the effect of homogeneous coating of alumina around SiC particles. Hence, the mechanical properties of the former was also much more improved than the latter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.333-334
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• 2007

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on SiOz and AlN substrates, respectively. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_2$ and AlN were not different. However, their electron mobilities were $7.65\;cm^2/V.s$ and $14.8\;cm^2/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_2$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.481-486
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• 1997

It was succeeded in synthesizing the $Al_2O_3$-SiC refractory powders, which is main raw material of AlSiCa, from the domestic Hadong Kaolin. The oxidation reaction of the synthesized $Al_2O_3$-SiC powder was examined. The activation energy for SiC in $Al_2O_3$-SiC powder was calculated to be $\Delta$G=74.86 KJ/mol in air, however the poor sinterability of the powders is thought to be due to the vaporization of SiC in $H_2$ atmosphere. The formation of the whisker-SiC gives the possibility in use for high temperature structural material over high temperature refractory brick.