• Transactions of Materials Processing
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• v.15 no.6 s.87
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• pp.421-427
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• 2006

Drawing process of Al-1%Si bonding wire considering fine Si particle is analyzed in this study using FE-simulation. Al-1%Si boding wire requires electric conductivity because Al-1%Si bonding wire is used for interconnection in semiconductor device. About 1% of Si is added to Al wire for dispersion-strengthening. Distribution and shape of fine Si particle have strongly influence on the wire drawing process. In this study, therefore, the finite-element model based on the observation of wire by continuous casting is used to analyze the effect of various parameters, such as the reduction in area, the semi-die angle, the aspect ratio, the inter-particle spacing and orientation angle of the fine Si particle on wire drawing processes. The effect of each parameter on the wire drawing process is investigated from the aspect of ductility and defects of wire. From the results of the analysis, it is possible to obtain the important basic data which can be guaranteed in the fracture prevention of Al-1 %Si wire.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2004.10a
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• pp.89-92
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• 2004

This paper is concerned with the drawing process of Al-Si wire. In this study, the finite-element model established in previous work was used to analyze the effects of various forming parameters, which included the reduction in area, the semi-die angle, the aspect ratio and the inter-particle spacing of the Si in drawing processes. The finite-element results gave the consolidation condition. From the results of analysis, the effects of each forming parameter were determined. It is possible to obtain the important basic data which can be guaranteed in the fracture prevention of Al-Si wire by using FEM simulation.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.05a
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• pp.393-396
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• 2005

This paper is concerned with the drawing process of $Al-1\%Si$ bonding wire. In this study, the finite-element model established in previous work was used to analyze the effect of various forming parameters, which included the reduction in area, the semi-die angle, the aspect ratio, the inter-particle spacing and orientation angle of the fine Si particle in drawing processes. The finite-element results gave the consolidation condition. From the results of analysis, the effects of each forming parameter were determined. It is possible to obtain the Important basic data which can be guaranteed in the fracture prevention of $Al-1\%Si$ wire by using FE-Simulation.

• Journal of Welding and Joining
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• v.28 no.1
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• pp.60-65
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• 2010

This paper is concerned with effects of Al, Mn and Si contents on spatter, fume, microstructure and mechanical property with 490MPa Grade Flux Core Wire(FCW). Ten kinds of FCW were fabricated by varying Mn, Si and Al contents and each FCW was weld for check the amount of spatter and fume generations, microstructures and mechanical property. Amount of spatter and fume generations was decreased with the increasing Si contents and decreasing by Al contents in FCW. And, their microstructure of weld metal were changed by Mn, Al and Si contents in FCW. With increasing of Al and Si, acicular ferrite was fine and volume fraction of acicula ferrite was increased. Thereby leading to improvement of Charpy impact property and strength.

• Korean Journal of Materials Research
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• v.34 no.3
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• pp.144-151
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• 2024

This work focuses on the fabrication of excellent magnetic structures for trapping breast cancer cells. Micromagnetic structures were patterned for trapping cancer cells by depositing 30 nm of permalloy on a silicon substrate. These structures were designed and fabricated using two fabrication techniques: electron beam lithography and laser direct writing. Two types of magnetic structures, rectangular wire and zig-zagged wire, were created on a silicon substrate. The length of each rectangular wire and each straight line of zig-zagged wire was 150 ㎛ with a range of widths from 1 to 15 ㎛ for rectangular and 1, 5, 10 and 15 ㎛ for zigzag, respectively. The magnetic structures showed good responses to the applied magnetic field despite adding layers of silicon nitride and polyethylene glycol. The results showed that Si + Si₃N₄ + PEG exhibited the best adhesion of cells to the surface, followed by Si + Py + Si₃N₄ + PEG. concentration of 5-6 with permalloy indicates that this layer affected silicon nitride in the presence of Polyethylene glycolPEG.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.96.2-96.2
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• 2010

The surface morphology and structural properties of polycrystalline silicon (poly-Si) films made in-situ aluminum induced crystallization at various substrate temperature (300~600) was investigated. Silicon films were deposited by hot-wire chemical vapor deposition (HWCVD), as the catalytic or pyrolytic decomposition of precursor gases SiH4 occurs only on the surface of the heated wire. Aluminum films were deposited by DC magnetron sputtering at room temperature. continuous poly-Si films were achieved at low temperature. from cross-section TEM analyses, It was confirmed that poly-Si above $450^{\circ}C$ was successfully grown on and poly-Si films had (111) preferred orientation. As substrate temperature increases, Si(111)/Si(220) ratio was decreased. The electrical properties of poly-Si film were investigated by Hall effect measurement. Poly-Si film was p-type by Al and resistivity and hall effect mobility was affected by substrate temperature.

• International Journal of Korean Welding Society
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• v.2 no.2
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• pp.42-46
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• 2002

The solidification cracking susceptibilities of Al-Mg-Si alloy laser welds were assessed using the self-restraint tapered specimen crack test. The cracking susceptibility of 6061 and 6082 Al-Mg-Si alloy laser welds was substantially reduced when the filler wire containing high Si such as Al-12 wt.% Si (4047A) was used. The amount of eutectic was observed to affect the solidification cracking of Al-Mg-Si alloy laser welds. Abundant eutectic seems to heal the cracking and reduces the cracking susceptibility, while an initial increase in eutectic liquid leads to the increased cracking tendency.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.577-582
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• 2002

The solidification cracking susceptibilities of AI-Mg-Si alloy laser welds were assessed using the self-restraint tapered specimen crack test. The cracking susceptibility of 6061 and 6082 Al-Mg-Si alloy laser welds was substantially reduced when the filler wire containing high Si such as Al-12 wt.% Si (4047A) was used. The amount of eutectic was observed to affect the solidification cracking of Al-Mg-Si alloy laser welds. Abundant eutectic seems to heal the cracking and reduces the cracking susceptibility, while an initial increase in eutectic liquid leads to the increased cracking tendency.

• Journal of Korea Foundry Society
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• v.14 no.5
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• pp.464-470
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• 1994

The horizontal continuous casting method with the heated mold was applied to study the solidification structures of the pure Al and Al-0.5wt%Si and Al-1.0wt%Si alloy rods. The results could be summarized as follows: 1. The S/L interface structures of pure Al represented the hexagonal cells at the casting speed of 590 and 350mm/min, respectively. However, the hexagonal cells became irregular as the casting speed and(or) Si amount increased. 2. The striation increased as the Si amount and casting speed increased and was found to result from the occurrence of growth twin crystals by XRD analysis. 3. The striation did not affect the mechanical and electrical property of the drawn wire from the casted rod. This means the striation is not a serious defect which has to consider in the production of micro-sized fine wire in the drawing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.66-69
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon$({\mu}c-Si:H)$ films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_{4}$ concentration$[F(SiH_{4})/F(SiH_{4})+F(H_{2})]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c-Si:H$ films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c-Si:H$ films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_{2}H_{6}$ to $SiH_{4}$ gas. The solar cells with structure of Al/nip ${\mu}c-Si:H$/TCO/glass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.