• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.314-314
• /
• 2008

The low temperature sintering and the dielectric properties of $Al_2O_3/SiO_2$-zinc borosilicate glass composites were investigated in the view of the application for LTCC. When the sintering was conducted at $900^{\circ}C$ $ZnAl_2O_4$ and $ZnB_2O_4$ compounds formed at the $Al_2O_3$-rich and the $SiO_2$-rich compositions, respectively. The reaction between ZBS glass and $Al_2O_3/SiO_2$ caused the formation of these compounds. The $Al_2O_3/SiO_2$ ratio affected the dielectric properties. The excellent dielectric properties, i.e., Q$\times$f value= 40,000 GHz and ${\varepsilon}_r$=4.5, were obtained in the $Al_2O_3/SiO_2$-ZBS glass system and fabricated the LTCC substrate materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.11
• /
• pp.934-940
• /
• 2001

Magnetic properties were investigated for Si/SiO$_2$/NiFe(300 )/A1$_2$O$_3$(t)/Co(200 ) junction related with the parameters of $Al_2$O$_3$. Insulating $Al_2$O$_3$ layer was formed by depositing a 5~40 thick Al layer, followed by a 90~120s RF plasma oxidation in an $O_2$ atmosphere. Magnetoresistance was not observed for tunnel junction with 5~10 thick Al layer, but magnetoresistance was observed large for tunnel junction with 15~40 thick Al layer. Oxidation time did not largely influence magnetoresistance. Tunnel magnetoresistance effect depended on magnetization behavior of two ferromagnetic layers. Tunneling junction was confirmed through nonlinear I-V curve. In this work, tunneling magnetoresistance(TMR) up to 30 % was observed. This apparent TMR is an artifact of the nonuniform current flow over the junction in the cross geometry of the electrodes.

• 한국신재생에너지학회:학술대회논문집
• /
• 2006.06a
• /
• pp.158-161
• /
• 2006

Superstrate pin amorphous silicon thin-film (a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides (TCO) In order to see the effect of TCO/P-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage $V_{oc}$ than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer $({\mu}c-Si:H)$ between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{oc}$, of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{oc}$, of 994mv while keeping fill factor (72.7%) and short circuit current density $J_{sc}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{oc}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

• Journal of the Korean Ceramic Society
• /
• v.35 no.7
• /
• pp.721-725
• /
• 1998

In this study solid-phase sintered silicon caribide samples composed of SiC powder having boron and car-bon black as additives were prepared by pressureless sintering at $1950^{\circ}C$. The bending strength the frac-ture toughness and the specific werar rate of the samples were examined and the micro structures of the broken and the worn surface were observed by SEM to understand the relationship between the tri-bological charcteristics and the micro structure. Additionally the relationship between the micro struc-tures and the tribological characteristics of the samples for the frictional opponents SiC and $Al_{2}O_{3}$ pins were investigated Conclusions are as follows ; 1. The specific were rate of the samples for the SiC pin was larger than that for the $Al_{2}O_{3}$ pin. HOwever the specific wear rate for the $Al_{2}O_{3}$ pin was increased about 6,45 times as that for the SiC pin under the load increasing. 2. The specific wear rate of the SiC pin was larger than that of the $Al_{2}O_{3}$ pin. owever the specific wear rate of the $Al_{2}O_{3}$ pin was increased about 4 times as that of the SiC pin under the load increasing 3. The micro stucture of the worn surface showed a flat face without cracks in the case that the frictional opponents has the low friction coefficient but in the case of without cracks in the case that the frictional opponents has the low friction coefficient but in the case of the high friction coefficient the micro structure of the worn surface showed an uneven face having spread-ed cracks. 4. The tribological characteristics of thesolid-phase sintered SiC samples was similar to that of li-quid-phase sintered ones when the pin having the high friction coefficient was used.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1998.05a
• /
• pp.116-116
• /
• 1998

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1996.05a
• /
• pp.22-22
• /
• 1996

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.168.1-168.1
• /
• 2015

자동차 산업분야에서 차량 경량화의 한 수단으로, 자동차용 유리를 무게가 가볍고 고강도 투명 고분자 소재인 폴리카보네이트로 대체하고자 하는 연구가 이루어지고 있다. 하지만, 폴리카보네이트의 낮은 내 마모 특성과 자외선에 의한 열화 및 변색 현상은 해결해야 할 문제점으로 지적되고 있다. 본 연구에서는, 폴리카보네이트의 내마모 특성을 향상시키기 위해 HIPIMS+ (High Power Impulse Magnetron Sputtering+) 방법을 이용하여 투과율이 확보되고, 고경도 특성을 갖는 Al-Si-N 박막을 증착하였다. 고속증착을 하기 위해 Target에 인가되는 Power를 올리게 되었는데, 열팽창 계수가 큰 고분자 물질인 폴리카보네이트 시료의 온도가 상승하여 증착된 박막과의 열팽창 계수 차이에 의해 박막에 Crack이 형성되는 문제가 발생하였다. 증착되는 Al-Si-N 박막의 공정 압력에 따른 Stress 제어 방법 및 폴리카보네이트 시료의 온도 상승을 막기 위한 알루미늄 구조체를 이용함으로써 박막의 Crack 형성을 억제하고자 하였다. 박막의 Stress를 확인하기 위하여 AFM (Atomic Force Microscope)과 OM (Optical Microscope)을 이용하여 분석하였고, 박막의 경도는 Knoop ${\mu}$-hardness tester를 사용하여 측정하였다. Al-Si-N 박막 경도는 Si at.%/(Al at.% + Si at.%) 비율이 16%에서 33 GPa의 경도를 갖는 것을 확인하였다. UV-Vis Spectrometer를 이용하여 투과율을 측정한 결과, 400-700 nm 파장의 가시광 영역 평균 투과율은 80%로 측정되었다.

• Journal of the Korean Ceramic Society
• /
• v.26 no.1
• /
• pp.13-20
• /
• 1989

After sintering Si3N4 containing 20wt% of variable composition ratio of Y2O3 and Al2O3 at 1$600^{\circ}C$, the specimens were annealed at 125$0^{\circ}C$ and 135$0^{\circ}C$ for 5, 10, 15 hours in order to crystallize the remanining oxynitride glass phases. The main grain-boundary crystalline phases in the Si3N4-Y2O3-Al2O3 system were melilite and YAG. By annealing 15hrs. at 125$0^{\circ}C$, almost all of the glasses were crystallized. During the growth of melilite, lattice volyume of $\beta$-Si3N4 was increased as Al3+ and O2- ions in the oxynitride glass diffuse into $\beta$-Si3N4 lattice, but during the growth of YAG, lattice volume of $\beta$-Si3N4 was decreased by reverse diffusion of Al3+ and O2- ions. In case of crystallization of glass phase to melilite, thermal expansion of sample was decreased, but in case of crystallization to YAG, inverse phenomen on was observed.

• Journal of Korea Foundry Society
• /
• v.28 no.4
• /
• pp.179-183
• /
• 2008

Mechanical properties of the spray-cast Al 6061 alloy with variation of Mg/Si addition were investigated. After spray-cast, hot extrusion was performed at $460^{\circ}C$ then followed ageing treatment to the T6 condition. SEM, EDX, and XRD were used to characterize a ${\beta}(Mg_{2}Si)$ precipitate. The amount of ${\beta}$ precipitate was calculated from the XRD measurements. Hardness, ultimate tensile strength and elongation were tested then compared with those of the Al 6061 alloys made by ingot metallurgy (I/M) and powder metallurgy (P/M). The ultimate tensile strength and elongation of the spray-cast Al 6061 alloy were 318MPa and 16.5%, respectively. These properties were improved in the 2.2 wt%Mg and 1.3wt%Si addition up to 349MPa of UTS and 12.5% of elongation, mainly due to increased amount of a fine supersaturated ${\beta}(Mg_{2}Si)$ precipitate.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.438-438
• /
• 2011

White light-emitting diodes (LEDs), the so-called next-generation solid-state lighting, offer benefits in terms of reliability, energy-saving, maintenance, safety, lead-free, and eco-friendly. Recently, rare-earth-doped oxynitride or nitride compounds have attracted a great deal of interest as a photoluminescent material because of their unique luminescent property, especially for white LEDs applications. Ce doped ${\beta}$-SiAlON has been studied as a wavelength conversion phosphor in white LEDs thanks to its high absorption rates, high quantum efficiency, and excellent thermal stability. Previously researches were not enough to understand the detail mechanism and characteristics of ${\beta}$-SiALON. The bandgap structures and electronic structures were not exact due to limitation of calculation methods. In this study, to elucidate the Ce doping effect on the SiAlON system, accurate band structures and electronic structure of the Ce doped ${\beta}$-SiAlON was intensively investigated using density functional theory calculations. In order to get a better description of the band gaps, MBJLDA method were used. We have found a single Ce atom site in ${\beta}$-SiAlON super cell. Furthermore, the density of state, band structure and lattice constant were intensively investigated.