• Journal of the Korean institute of surface engineering
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• v.49 no.6
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• pp.580-586
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• 2016

Cr-Si-Al-N coating with different Si content were deposited by hybrid physical vapor deposition (PVD) method consisting of unbalanced magnetron (UBM) sputtering and arc ion plating (AIP). The deposition temperature was $300^{\circ}C$, and the gas ratio of $Ar/N_2$ were 9:1. The CrSi alloy and aluminum targets used for arc ion plating and sputtering process, respectively. Si content of the CrSi alloy targets were varied with 1 at%, 5 at%, and 10 at%. The phase analysis, composition and microstructural analysis performed using x-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) including energy dispersive spectroscopy (EDS), respectively. All of the coatings grown with textured CrN phase (200) plane. The thickness of the Cr-Si-Al-N films were measured about $2{\mu}m$. The friction coefficient and removal rate of films were measured by a ball-on-disk test under 20N load. The friction coefficient of all samples were 0.6 ~ 0.8. Among all of the samples, the removal rate of CrSiAlN (10 at% Si) film shows the lowest values, $4.827{\times}10^{-12}mm^3/Nm$. As increasing of Si contents of the CrSiAlN coatings, the hardness and elastic modulus of CrSiAlN coatings were increased. The morphology and composition of wear track of the films was examined by scanning electron microscopy (SEM) and energy dispersive spectroscopy, respectively. The surface energy of the films were obtained by measuring of contact angle of water drop. Among all of the samples, the CrSiAlN (10 at% Si) films shows the highest value of the surface energy, 41 N/m.

• Composites Research
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• v.30 no.5
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• pp.310-315
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• 2017

In this study, we have investigated microstructure, mechanical properties and wear characteristic of aluminum metal matrix composites with a high volume fraction and uniformly dispersed SiC particles which produced by a liquid pressing process. The volume fraction of bimodal SiC/Al7075 composite was 12% higher than that of the monomodal SiC/Al7075 composite and a compressive strength is increased about 200 MPa. As a result of the abrasion test, the wear width and depth of the bimodal SiC/Al7075 composite were $285.1{\mu}m$ and $0.45{\mu}m$, respectively. The coefficient of friction of bimodal SiC/Al7075 was 0.16.

• Korean Journal of Materials Research
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• v.21 no.4
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• pp.220-224
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• 2011

Zircon has excellent thermal, chemical, and mechanical properties, but it is hard to make a dense sintered product because of dissociation during the sintering process. This study analyzes how the addition of $SiO_2$ and $Al_2O_3$ affects the mechanical properties of sintered zircon, particularly in regards to reducing the thermal dissociation and improving the mechanical properties of $ZrSiO_4$. Zircon specimens containing different amounts of $SiO_2$ and $Al_2O_3$ were prepared and sintered to observe how the mechanical properties of $ZrSiO_4$ changed according to the differing amount of $SiO_2$ and $Al_2O_3$. The $ZrSiO_4$ that was used for the starting material was ground by ball mill to an average particle size of 3 ${\mu}m$. The $SiO_2$ and $Al_2O_3$ that was used for additives were ground to an average particle size of 3 ${\mu}m$ and 0.5 ${\mu}m$, respectively. Adding $SiO_2$ resulted in transformation in the liquid phase at high temperatures, which had little effect on suppressing the thermal dissociation but enhanced the mechanical properties of $ZrSiO_4$. When $Al_2O_3$ was added, the mechanical properties of $ZrSiO_4$ decreased due to the formation of pores and abnormal grains in the microstructure of the sintered zircon.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.2
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• pp.91-97
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• 2013

Self-heating effects during operation of high current AlGaN/GaN power transistors degrade the current-voltage characteristics. In particular, this problem becomes serious when a low thermal conductivity Si substrate is used. In this work, AlGaN/GaN-on-Si devices were fabricated with various channel widths and Si substrate thicknesses in which the structure dependent self-heating effects were investigated by temperature dependent measurements as well as thermal simulation. Accordingly, a device structure that can effectively dissipate the heat was proposed in order to achieve the maximum current in a multi-channel, large area device. Employing via-holes and common electrodes with a 100 ${\mu}m$ Si substrate thickness improved the current level by 75% reducing the channel temperature by 68%.

• Korean Journal of Metals and Materials
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• v.49 no.7
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• pp.565-569
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• 2011

Nanopowders of MgO, $Al_2O_3$ and $SiO_2$ were made by high-energy ball milling. The fast sintering of nanostructured $Al_2O_3-MgSiO_3-SiO_2$ composites was investigated from mechanically activated powders of MgO, $Al_2O_3$ and $SiO_2$ by a pulsed-current activated sintering process. Nanocrystalline materials have received much attention as advanced engineering materials with improved physical and mechanical properties; in particular greater strength, hardness, excellent ductility and toughness. Highly dense nanostructured $Al_2O_3- MgSiO_3-SiO_2$ composites were produced with simultaneous application of 80 MPa and pulsed output current of 2800A within 2 minutes. The sintering behavior, grain size and mechanical properties of $Al_2O_3-MgSiO_3-SiO_2$ composites were investigated.

• Korean Journal of Materials Research
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• v.30 no.1
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• pp.31-37
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• 2020

In this study, the effects of Sm addition (0, 0.05, 0.2, 0.5 wt%) on the microstructure, hardness, and electrical and thermal conductivity of Al-11Si-1.5Cu aluminum alloy were investigated. As a result of Sm addition, increment in the amount of α-Al and refinement of primary Si from 70 to 10 ㎛ were observed due to eutectic temperature depression. On the other hand, Sm was less effective at refining eutectic Si because of insufficient addition. The phase analysis results indicated that Sm-rich intermetallic phases such as Al-Fe-Mg-Si and Al-Si-Cu formed and led to decrements in the amount of primary Si and eutectic Si. These microstructure changes affected not only the hardness but also the electrical and thermal conductivity. When 0.5 wt% Sm was added to the alloy, hardness increased from 84.4 to 91.3 Hv, and electric conductivity increased from 15.14 to 16.97 MS/m. Thermal conductivity greatly increased from 133 to 157 W/m·K.

• Resources Recycling
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• v.32 no.1
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• pp.42-49
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• 2023

The glass ceramic secondary resource containing Li-Al-Si is used in inductor, fireproof glass, and transparent cookware and accounts for 14% of the total consumption of Li, which is the second most widely used after Li-ion batteries. Therefore, new Li resources should be explored when the demand for Li is exploding, and extensive research on Li recovery is needed. Herein, we recovered Li from fireproof Li-Al-Si glass ceramic, which is a new secondary resource containing Li. The fireproof glass among all Li-Al-Si glass ceramics was used as raw material that contained 1.5% Li, 9.4% Al, and 28.9% Si. The process for recovering Li from the fireproof glass was divided into two parts: (1) calcium salt roasting and (2) water leaching. In calcium salt roasting, a sample of fireproof glass was crushed and ground below 325 mesh. The leaching efficiency was compared based on the presence or absence of heat treatment of the fireproof glass. Moreover, the leaching rates based on the input ratios of calcium salt, Li-Al-Si glass, and ceramics and the leaching process based on calcium salt roasting temperatures were compared. In water leaching, the leaching and recovery rates of Li based on different temperatures, times, solid-liquid ratios, and number of continuous leaching stages were compared. The results revealed that fireproof glass ceramics containing Li-Al-Si should be heat treated to change phase to beta-type spodumene. CaCO₃ salt should be added at a ratio of 6:1 with glass ceramics containing Li-Al-Si, and then leached 4 times or more to achieve a recovery efficiency of Li over 98% from a solution containing 200 mg/L of Li.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.5
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• pp.179-183
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• 2008

Employing screen printing technology, aluminum is applied to the back side of the n-type silicon wafer to see the effect of the heat treatment parameters on the Voc of the solar cell, Heat treatment at $850^{\circ}C$ produces the highest Voc among various heat treatment conditions. Heat treatment at the temperatures higher than $850^{\circ}C$ results in lower Voc, which is due to the destruction of the Al-Si alloy emitter layer. The destruction of Al-Si layer observed to be caused by the vigorous movement of silicon atoms toward aluminum layer during the heat treatment.

• Journal of Korea Foundry Society
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• v.12 no.6
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• pp.464-470
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• 1992

In the present study, the effects of Al/SiC interface reaction and the formation of $Al_4C_3$ compounds on the mechanical properties of the Al/SiC composites prepared by squeeze casting were investigated. After squeeze casting, the size of dendrites in Al without whiskers were larger than those with whiskers. The hardness of composite materials (about 72 Hv) was found to be approximating 40% higher than that of matrix metal (29Hv), which gradually increases which heat treatment Time showing maximum hardness at 12hr. The observation of increasing number of compounds in 12hrs heat treatment suggests that these compounds are responsible for the increase of hardness. By X-ray diffraction studies, those compounds were identified as $Al_4C_3$, (Al, Si). And intensity of Si peak increased. The tensile strengh of composite materials was gradually decresed by heat tretment, which was in contrast to the behavior of hardeness. With incresing heat tretment time, the fracture mode of composite materials was changed from large dimples and pull-out form of fiber to the fracture and rupture foum of fiber.

• Korean Journal of Materials Research
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• v.5 no.4
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• pp.412-419
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• 1995

과공정 Al-18wt%Si합금의 초정 Si입자의 미세화에 미치는 첨가원소의 영향에 관하여 조사하였다. 초정 Si입자의 크기는 P량이 증가함에 따라 미세해졌으며 적정 P량은 40ppm이었다. 최적주입온도는 AlCuP, CuP 경우 각각 75$0^{\circ}C$, 80$0^{\circ}C$이었으며 미세화 처리 후 10분 이상 경과되어도 초정 Si입자의 크기는 변화가 없었다. 또한 WDS분석 결과 초정 Si내에 AIP가 핵생성 site로 존재함을 알 수 있었다.