• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.189-189
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• 2016

In this study, the Al-rich AlTiSiN thin films that consisted of TiN/AlSiN nano-multilayers were deposited on the steel substrate by magnetron sputtering, and their high-temperature oxidation behavior was investigated, which has not yet been adequately studied to date. Since the oxidation behavior of the films depends sensitively on the deposition method and deposition parameters which affect their crystallinity, composition, stoichiometry, thickness, surface roughness, grain size and orientation, the oxidation studies under various conditions are imperative. AlTiSiN nano-multilayer thin films were deposited on a tool steel substrate, and their oxidation behavior of was investigated between 600 and $1000^{\circ}C$ in air. Since the amount of Al which had a high affinity for oxygen was the largest in the film, an ${\alpha}-Al_2O_3-rich$ scale formed, which provided good oxidation resistance. The outer surface scale consisted of ${\alpha}-Al_2O_3$ incoporated with a small amount of Ti, Si, and Fe. Below this outer surface scale, a thin ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale formed by the inwardly diffusing oxygen. The film oxidized slower than the $TiO_2-forming$ kinetics and TiN films, but faster than ${\alpha}-Al_2O_3-forming$ kinetics. During oxidation, oxygen from the atmosphere diffused inwardly toward the reaction front, whereas nitrogen and the substrate element of iron diffused outwardly to a certain extent.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.309-309
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• 2011

알루미늄 합금은 경량성과 우수한 가공성, 내식성 등의 특성을 지니고 있고 구리나 아연, 마그네슘, 실리콘 등과 쉽게 합금화 가능하다. 또한 알루미늄과 그 합금은 자동차, 항공기, 건축물, 레저 그리고 가전용품의 재료로도 널리 사용되고 있다. 특히 Al에 Si을 소량 첨가하게 되면 내식성과 반사율이 향상되는 것으로 알려져 있다. 본 연구에서는 마그네트론 스퍼터링으로 Al, Al-Si 박막을 코팅하여 박막의 미세구조와 가시광선의 반사율을 관찰하였다. 시편은 Si wafer를 사용하였으며 알코올과 아세톤으로 각각 10분간 초음파 세척한 후 진공장비에 장착하여 Ar 분위기에서 glow discharge로 in-situ cleaning을 약 30분간 실시하였다. 시편청정이 끝나면 ~10-6 Torr 까지 진공배기를 실시하고 Ar 가스를 주입하여 2.5 mTorr로 진공도를 유지하면서 박막 코팅을 실시하였다. 기판-타겟의 거리는 12 cm로 고정 하였고 0.7, 1.5, 2.0 kW의 스퍼터링 파워와 외부 자기장의 변화에 따라 실험을 실시하였다. 순수한 Al 박막의 경우 외부 자기장 변화가 박막조직 변화에 영향을 주었으나 Si이 함유된 Al 합금 박막에서는 외부 자기장의 효과보다는 스퍼터링 전원의 세기가 박막 조직을 변화시키는 주된 공정변수였다. 박막의 반사율은 Si이 함유된 박막이 순수한 Al 박막보다 높았으며 스퍼터링 전원 세기가 증가할수록 반사율이 증가하는 경향성을 보였다. 이것은 Si을 Al에 첨가하여 스퍼터링 전원 세기를 최적화하는 것만으로도 치밀한 조직의 박막을 코팅할 수 있으며 높은 반사율을 갖는 박막을 코팅할 수 있음을 의미한다.

• Korean Journal of Materials Research
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• v.30 no.3
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• pp.111-116
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• 2020

Two different casting speeds of 60 and 80mm/min are adopted to determine the effect of casting speed on the microstructure and mechanical properties of Al-Mg-Si/Al hybrid material prepared by duo-casting. The obtained hybrid material has a uniform and straight macro-interface between the pure Al side and the Al-Mg-Si alloy side at both casting speeds. When the casting speed is increased to 80mm/min, the size of primary α phases in Al-Mg-Si alloy decreases, without change of shape. Although the Al-Mg-Si alloy produced at higher casting speed of 80mm/min shows much higher ultimate tensile strength (UTS) and 0.2 % proof stress and lower elongation, along with higher bending strength compared to the case of the 60mm/min in casting speed, the tensile properties and bending strength of the hybrid material, which are similar to those of pure Al, are the same regardless of the increase of casting speed. Despite the different casting speeds, deformation and fracturing in hybrid materials are observed only on the pure Al side. This indicates that the macro-interface is well-bonded, allowing it to endure tensile and bending deformation in all hybrid materials.

• Journal of Sensor Science and Technology
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• v.9 no.5
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• pp.389-395
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• 2000

In this paper, we propose the formation of an $Al_2O_3$ pre-layer using a protective Si-oxide layer and Al layer. Deposition of a thin film layer of aluminum onto a Si surface covered with a thin Si-oxide layer and annealing at $800^{\circ}C$ led to the growth of epitaxial $Al_2O_3$ layer on Si(111). And ${\gamma}-Al_2O_3$ layer was grown on the $Al_2O_3$ per-layer. Etching of the Si substrate by $N_2O$ gas could be avoided in the initial growth stage by the $Al_2O_3$ pre-layer. It was confirmed that the $Al_2O_3$ pre-layer was effective in improving the surface morphology of the very thin ${\gamma}-Al_2O_3$ films.

• Journal of Korea Foundry Society
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• v.17 no.2
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• pp.170-179
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• 1997

A noble technique has been developed for fabricating in situ formed $TiC_p/Al$ composites. In this process, fairly stable TiC particles were in situ synthesized in liquid aluminum by the interfacial reaction between an Al-Ti melt and SiC, which is a comparatively unstable carbide from the view-point of thermodynamics. It is possible in the present process to generate TiC particles of nearly 1 ${\mu}m$ in diameter, even utilizing SiC of 14 ${\mu}m$ as raw material. However, the dispersion behavior of TiC particles in the matrix depends on the size of the raw material SiC. Decomposing finer SiC makes the dispersion of TiC particles more uniform and the mechanical properties of composites are improved accordingly. The structure of in situ composites and their mechanical properties are affected by the fabrication temperature and the stirring time. It has been found that the most suitable condition for fabrication should be applied depending on the size of the raw material, even if the same kinds of carbide are used. Furthermore, although Al-Ti-Si system intermetallic compounds are detected in a $TiC_p/Al-Si$ composite which is fabricated by conventional melt-stirrng method, these compounds can not be observed in a $TiC_p/Al-Si$ composite made by this in situ production method. Hence the mechanical properties of the in situ $TiC_p/Al-Si$ composite are superior to those of the conventional $TiC_p/Al-Si$ composites.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.273-273
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• 2008

This paper describes the frequency response of two-port surface acoustic wave (SAW) resonator made of 002-polycrystalline aluminum nitride (AlN) thin film on 111-poly 3C-SiC buffer layer. In there, Polycrystalline AlN thin films were deposited on polycrystalline 3C-SiC buffer layer by pulsed reactive magnetron sputtering system, the polycrystalline 3C-SiC was grown on $SiO_2$/Si sample by CVD. The obtained results such as the temperature coefficient of frequency (TCF) of the device is about from 15.9 to 18.5 ppm/$^{\circ}C$, the change in resonance frequency is approximately linear (30-$150^{\circ}C$), which resonance frequency of AlN/3C-SiC structure has high temperature stability. The characteristics of AlN thin films grown on 3C-SiC buffer layer are also evaluated by using the XRD, and AFM images.

• Nuclear Engineering and Technology
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• v.43 no.2
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• pp.159-166
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• 2011

Si-rich-layer-coated U-7 wt%Mo plates were prepared in order to evaluate the diffusion barrier performance of the Si-rich layer in U-Mo vs. Al interdiffusion. Pure Si powder was used for coating the U-Mo plates by annealing at $900^{\circ}C$ for 1 h under vacuum of approximately 1 Pa. Si-rich layers containing more than 60 at% of Si were formed on U-7 wt%Mo plates. Diffusion couple tests were conducted in a muffle furnace at $560-600^{\circ}C$ under vacuum using Si-rich-layer-coated U-Mo plates and pure Al plates. Diffusion couple tests using uncoated U-Mo plates and Al-(0, 2 or 5 wt%)Si plates were also conducted for comparison. Si-rich-layer coatings were more effective in suppressing the interaction during diffusion couple tests between coated U-Mo plate and Al, when compared with U-Mo vs. Al-Si diffusion couples, since only small amounts of Al in the coating could be found after the diffusion couple tests. Si-rich-layer-coated U-7wt%Mo particles were also prepared using the same technique for U-7 wt%Mo plates to observe the microsturctures of the coated particles.

• Journal of the Korean Ceramic Society
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• v.28 no.8
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• pp.625-625
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• 1991

The specimens for the corrosion test were made by hot-pressing of SiC power with 2 wt% Nl2O3 and 10wt% Al2O3 additions at 2000℃ and 2050℃. The specimens were corroded in 37 mole% NaCl and 63 mole% Na2SO4 salt mixture at 1000℃ up to 60 min. SiO2 layer was formed on SiC and then this oxide layer was dissolved by Na2O ion in the salt mixture. The rate of corrosion of the specimen containing 10 wt% Al2O3 was slower than that of the specimen containing 2 wt% Al2O3. This is due to the presence of continuous grain boundary phase in the specimen containing 10 wt% Al2O3. The oxidation of SiC produced gas bubbles at the SiC-SiO2 interface. The rate of corrosion follows a linear rate law up to 50 min. and then was accelerated. This acceleration is due to the disruption oxide layer by the gas evolution at SiC-SiO2 interface. Pitting corrosion has found at open pores and grain boundaries.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.255-255
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• 2015

나노압침방법을 적용하여 arc ion plating을 통해 제조된 TiAlSiN 코팅층의 질소 함량에 따른 나노 기계적 특성을 평가하였다. 코팅층의 질소 함량은 28~30 [at.%] 이었다. 코팅층에는 AlN, TiSi, $Al_5Ti_3$, $Ti_3AlN$, $Al_5Ti_2$ 상이 형성되었다. 질소 함량이 더 작은 코팅층의 나노경도, 마찰계수, 피로한계의 값이 높아짐을 알 수 있었다.

• Journal of the Korean Ceramic Society
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• v.29 no.3
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• pp.223-231
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• 1992

CaO and ZnO were added to Al2O3-SiO2 binary system respectively as flux, then ZrO2 and TiO2 were applied as nucleating agent to these CaO-Al2O3-SiO2 and ZnO-Al2O3-SiO2 ternary system glass. The transparency could not be kept in CaO-Al2O3-SiO2 system glass, whereas the transparent glass-ceramics were prepared in ZnO-Al2O3-SiO2 system glass containing ZrO2 as the nucleating agent. At this time the optimum heating temperatures for the nucleation and the crystal growth were 78$0^{\circ}C$ and 97$0^{\circ}C$. The sizes of the precipitated crystals in the transparent glass-ceramics were below 0.1 ${\mu}{\textrm}{m}$, and their light transmissibilities were more than 80%.