• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.251-256
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• 2003

Indium aluminum arsenide(InAlAs) was grown by molecular beam epitaxy on (001) indium phosphide (InP) substrate and the effects of growth temperature on the properties of epitaxial layers were studied. In the temperature range of 370-$400 ^{\circ}C$, we observed that the surface morphology, optical quality and structural quality of InAlAs epilayers were improved as growth temperature increased. However, the InAlAs epilavers grown at $430 ^{\circ}C$ have the bad surface morphology and show the same trends as structural and epical quality. As a result of these measurements, it is suggested that the InAlAs epilayers of very good properties can be grown at $400 ^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.28 no.6
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• pp.465-470
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• 1991

AlN powder was synthesized by carbothermal reduction and nitridation of aluminum hydroxides precipitated in 5∼11 pH range from Al2(SO4)3$.$18H2O aqueous solution. Nitridation reactivity of hydroxide, which depends on precipitation pH, reaction temperature and time, was examined by XRD analysis at 1200∼1350$^{\circ}C$ and compared with that of commercial ${\alpha}$-Al2O3. Hydroxides obtained at higher pH could be more easily nitridated and, considering DTA/TG and BET results, the reason seems to be specific surface area difference of reactants depending on the content of decomposed structural water and the transition rate from transition-Al2O3 to ${\alpha}$-Al2O3.

• Journal of the Korean Ceramic Society
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• v.30 no.12
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• pp.1045-1053
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• 1993

Alumina hydrates were prepared by the neutralization of AlCl3.6H2O solution with NH3 gas diluted with N2 gas. The values of pH in reaction solution influenced the formation of alumina hydrates minerals. Amorphous alumina hydrates, for example, were formed at ${\gamma}$-Al2O3longrightarrow$\delta$-Al2O3longrightarrow$\theta$-Al2O3longrightarrow$\alpha$-Al2O3. (2) Bayeritelongrightarrowamorphouslongrightarrow${\gamma}$-Al2O3longrightarrow$\delta$-Al2O3longrightarrowη-Al2O3longrightarrow$\theta$-Al2O3longrightarrow$\alpha$-Al2O3. On the other hand, the shape of alumina hydrates whichw ere prepared by the reacton of Al2(SO4)3.16H2O solution and NH3 gas was spherical, the progress of its phase transformation with increasing temperature was amorphouslongrightarrow${\gamma}$-Al2O3longrightarrow$\alpha$Al2O3 in sequence.

• Journal of the Korean Chemical Society
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• v.61 no.5
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• pp.231-237
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• 2017

Efficiently removing Al(III) from rare earth is very significant because even trace amount of Al(III) can cause serious harm to the rare earth materials. In this paper, a nitrogen-containing activated carbon, AC-P700, was synthesized using peas as raw materials. The AC-P700 was characterized by surface area analyzer, FT-IR, and XPS methods. The adsorption and recognition properties of AC-P700 towards Al(III) were investigated, and the recognition mechanism was also analyzed. The BET special surface area of AC-P700 was $1277.1m^2{\cdot}g^{-1}$, and the average pore diameter was 1.90 nm. The AC-P700 possesses strong adsorption affinity and excellent recognition selectivity towards Al(III). The adsorption capacity for Al(III) could reach to $0.53mmol{\cdot}g^{-1}$, and relative selectivity coefficients relative to La(III) and Ce(III) is 9.6 and 8.7, respectively. Besides, AC-P700 possesses better regeneration ability and reusability.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.2
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• pp.321-324
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• 2020

In this work, we developed a selective etching process for GaN that is a key process in p-GaN/AlGaN/GaN enhancement-mode (E-mode) power switching field-effect transistor (FET) fabrication. In order to achieve a high current density of p-GaN/AlGaN/GaN E-mode FET, the p-GaN layer beside the gate region must be selectively etched whereas the underneath AlGaN layer should be maintained. A selective etching process was implemented by oxidizing the surface of the AlGaN layer and the GaN layer by adding O2 gas to Cl2/N2 gas which is generally used for GaN etching. A selective etching process was optimized using Cl2/N2/O2 gas mixture and a high selectivity of 53:1 (= GaN/AlGaN) was achieved.

• Korean Journal of Soil Science and Fertilizer
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• v.10 no.4
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• pp.211-217
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• 1978

Laboratory experiment was conducted to investigate the changes in the amount of inorganic phosphorus forms in soils incubated by preaddition of two kinds of phosphorus fertilizer and to various methods of available soil P. The results are summarized as following. 1. The content of Al-P form was higher in cultivated upland soil than in noncultivated soil and that of Fe-P was higher in clayey soil than in sandy soil. 2. The amount of Al-P was increased greatly by addition of Triple superphosphate and Al-P and Ca-P were increased by addition of Fused phosphate but only a little amount of Fe-P was increased by both two fertilizers. 3. The magnitute of available soil P values of different methods was in order of Bray No. 2-P>Lancaster-P${\fallingdotseq}$Bray No. 1-P>Truog-P>Olsen-P in case of addition of Triple superphosphate, while it was Lancaster-P >Bray No. 2-P>Truog-P>Bray No.1-P>Olsen-P in case of addition of Fused phosphate. 4. Extractability of soil P by variouse extractants for determining avaliable soil p was in order of Al-P>Ca-P>Fe-P but the extractability of Fe-P by Bray No. 1 and Bray No. 2 methods was very slight. 5. Bray No. 1, Bray No. 2 and extractants was more Olsen extractable about Al-P in soil than Ca-P but Lancaster and Truog metho is was more extractable about Ca-P than Al-P.

• Journal of the Korean institute of surface engineering
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• v.36 no.4
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• pp.334-338
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• 2003

$BCl_3$고밀도 평판형 유도결합 플라즈마(High Density Planar Inductively Coupled Plasma)를 이용하여 AlGaAs와 InGaP의 건식식각에 대하여 연구하였다. 본 실험에서는 ICP 소스파워(0∼500 W), RIE 척 파워(0-150 W), 공정압력(5∼15 mTorr)의 변화에 따른 AlGaAs와 InGaP의 식각률, 식각단면 그리고 표면 거칠기 등을 분석 하였다. 또, 공정 중 OES(Optical Emission Spectroscopy)를 이용하여 in-situ로 플라즈마를 관찰하였다. $BCl_3$ 유도결합 플라즈마를 이용한 AlGaAs의 식각결과는 우수한 수직측벽도와(>87$^{\circ}$) 깨끗하고 평탄한 표면(RMS roughness = 0.57 nm)을 얻을 수 있었다. 반면, InGaP의 경우에는 식각 후 표면이 다소 거칠어진 것을 확인할 수 있었다. 모든 공정조건에서 AlGaAs의 식각률이 InGaP보다 더 높았다. 이는 $BCl_3$ 유도결합 플라즈마를 이용하여 InGaP을 식각하는 동안 $InCl_{x}$ 라는 휘발성이 낮은 식각부산물이 형성되어 나타난 결과이다. ICP 소스파워와 RIE 척파워가 증가하면 AlGaAs와 InGaP모두 식각률이 증가하였지만, 공정압력의 증가는 식각률의 감소를 가져왔다. 그리고 OES peak세기는 공정압력과 ICP 소스파워의 변화에 따라서는 크게 변화하였지만 RIE 척파워에 따라서는 거의 영향을 받지 않았다.

• Journal of the Korean Society for Heat Treatment
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• v.9 no.2
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• pp.79-90
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• 1996

Transmission electron microscopy(TEM) investigation on the phase decomposition of B2-ordered (Ni,Co)Al supersaturated with Ni and Co has revealed the precipitation of $(Ni,Co)_2Al$ which has not been expected from the reported equilibrium phase diagram. The $(Ni,Co)_2Al$ phase has a hexagonal struture and takes a rod-like shape with the long axis of the rod parallel to the <111> directions of the B2 matrix. By aging at temperatures below 873 K, a long period Superlattice Structure appears in the hexagonal $(Ni,Co)_2Al$ Phase. The orientation relationship between the $(Ni,Co)_2Al$ Precipitates and the B2-(Ni,Co)Al matrix is found to be$(0001)_p$ // $(111)_{B2}$ and $[\bar{1}2\bar{1}0]_P$ // $[\bar{1}10]_{B2}$, Where the suffix p and B2 denote the $(Ni,Co)_2Al$ precipitate and the B2-(Ni,Co)Al matrix, respectively. (Ni,Co)Al hardens appreciably by the fine precipitation of the $(Ni,Co)_2Al$ phase. Energy dispersive spectroscopy was used to analyze the compositions of each phase formed in B2-(Ni,Co)Al.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.156.2-156.2
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• 2016

The variation of the surface structure of the Al adsorbed W(110) planes according to the coverage and the substrate temperature has been investigated using LEED and ISS When the Al atoms were adsorbed on the W(110) surface at room temperature, a p($1{\times}1$) of the fcc (111) face were found at the coverage higher than 4 ML. When the substrate temperature was kept at 900 K during Al adsorption and the coverage was 1.0 ML, the surface revealed a p($1{\times}1$) of the bcc(110) face and when the coverage is 1.5 ML, the surface showed a p($1{\times}1$) of the bcc (110) face together with a p($1{\times}1$) double domain structure (fcc (111) face) rotated ${\pm}3^{\circ}$ from the [100] direction of the W(110) surface. When Al atoms were adsorbed on the W(110) surface at the substrate temperature of 1000 K and the coverage was higher than 1.0 ML, the surface revealed a p($1{\times}1$) of the bcc(110) face together with p($1{\times}1$) double domain structure(fcc(111) face) rotated ${\pm}3^{\circ}{\sim}5^{\circ}$ from the [100] direction of the W(110) surface. When Al atoms were adsorbed on the W(110) surface at the substrate temperature of 1100 K and the coverage was 0.5 ML, Al atoms formed a p($2{\times}1$) double domain structure When the coverage was 1.0 ML, the double domain hexagonal structure (fcc(111) face) rotated ${\pm}5^{\circ}$ from the [100] direction of the W(110) surface and another distorted hexagonal structure was found. Low-energy electron diffraction results along with ion scattering spectroscopy results showed that the Al atoms followed the Volmer-Weber growth mode at high temperature.

• Journal of the Korean Ceramic Society
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• v.32 no.9
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• pp.1076-1084
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• 1995

A mixture of aluminum isopropoxide (Al(OC3H7i)3) solution and sodium hydroxide (NaOH) solution was hydrolyzed in the range between pH 1~14. the powder obtained from sol-gel process was calcined at several temperatures and crystallization behaviors of various samples were investigated. The hydrolyzed sols of pH 1~6 wre clear, or near clear. On the other hand, powder precipitated from sols of pH 7~14. The sample obtained from pH 3 solution crystallized via complicated route, and $\beta$-Al2O3 and $\beta$"-Al2O3 phases appeared at lower temperature than samples from other pH conditions. And the quantity of remained $\beta$"-Al2O3 phase after heat treatment at 150$0^{\circ}C$ was more than samples from other pH conditions. After sintering, ionic conductivities were 1.3$\times$10-4S.cm-1 to 0.76$\times$10-4S.cm-1.0-4S.cm-1.