• Title/Summary/Keyword: Al-P

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Epoxidation of Styrene using Nanosized γ-Al2O3/NiO Heterogeneous Catalyst Derived from the P123 Surfactant

  • Son, Boyoung;Jung, Miewon
    • Journal of the Korean Ceramic Society
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    • v.49 no.5
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    • pp.423-426
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    • 2012
  • $Al_2O_3$/NiO powder was obtained through hydrolysis-condensation reactions and thermal treatments. An organic additive, triblock copolymer surfactant P123, was added to the starting materials to control the surface area and morphology. The synthesized powder was characterized by X-ray diffractometry (XRD), field-emission scanning electron microscopy (FE-SEM) and a Brunner-Emmett-Teller surface analysis (BET). The heterogeneous catalytic activity of this powder was applied to an epoxidation reaction of styrene and was monitored using a gas chromatograph with mass spectrophotometry (GC/MS).

Studies on AlF3-(Mg+Sr+Ba)F2-P2O5 Glasses II. Effect of MgF2 Contents (AlF3-(Mg+Sr+Ba)F2-P2O5계 유리에 관한 연구 제2보 : MgF2의 영향)

  • 김정은;이종근
    • Journal of the Korean Ceramic Society
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    • v.24 no.3
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    • pp.277-281
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    • 1987
  • The various contents of MgF2 from 0 to 12.5wt% are studied in the AlF3-(Mg+Sr+Ba)F2-P2O5 system for the effects of various properties in glasses and the atmosphere of melting was controlled by N2 and Ar gas respectively. Density, refractive index, infrared transmission, thermal conductivity and thermal expansion coefficient of glasses are determined. Density, refractive index and thermal conductivity are decreased, micro-hardness and thermal expansion coefficient are increased according to the increasing of MgF2 contents. Infrared transmittance decreases with increasing the MgF2 contents and it slightly dropped by air than N2 and Ar atmosphere. Other properties are not influenced by atmosphere control.

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Aluminum Complexation and Precipitation with Seaweed Biosorbent

  • Lee, Hak-Sung;Kim, Young-Tae
    • Environmental Sciences Bulletin of The Korean Environmental Sciences Society
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    • v.2 no.1
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    • pp.1-8
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    • 1998
  • Biomass of non-living brown seaweed Sargassum fluitans pretreated by different methods is capable of taking up more than $10\%$ (11 meq/g) of its dry weight in aluminum at a pH of 4.5. It is indicated that the biomass sequestered the aluminum in the form of polynuclear aluminum species. The fraction of $Al(OH)_3$ Precipitated in the aluminum nitrate solution without biomass at pH 4.5 increased as the Al concentration increased. Aluminum-alginate complex precipitated in the solution as alginate was partially released from the biomass. External colloidal precipitate occurring in native and protonated S. fluitans biomass sorption systems caused a significant difference in Al sorption isotherms determined by standard and desorption methods, respectively, Sodium ions added for pH adjustment were not sorbed at all in the presence of aluminum ions.

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Nano Pillar의 두께에 따라 적용된 AlGaInP Vertical LED의 광추출효율 향상 연구

  • Ryu, Ho-Seong;Park, Min-Ju;Baek, Jong-Hyeop;O, Hwa-Seop;Gwak, Jun-Seop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.593-593
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    • 2013
  • 나노패턴 제작은 차세대 초고밀도 반도체 메모리기술과 바이오칩 등 나노기술의 핵심 분야로, 나노패턴 구조를 나노-바이오 전자소자 및 반도체 산업분야에 적용할 경우 시장 선점 및 막대한 부가가치 창출 등을 통해 국가경쟁력 강화에 크게 기여할 것으로 기대된다. 하지만 대면적 패턴형성이 어려워 뿐만 아니라 $300^{\circ}$ 이상의 열처리 과정에 의한 생산성이 떨어진다. 또한 나노구조가 잘 이루어진 차원, 표면상태, 결정성, 화학적 조성을 갖도록 하는 합성 및 제조상의 어려움 때문이다. 이에 반해 자기정렬 ITO Dot 형성은 상기 기술한 1차원 나노구조형성을 하는 것에 비하여, 나노구조를 제작하기 위하여 공정이 단순하며, 비용 및 생산성 측면에서 유리 할 것으로 생각된다. 이에 본 연구는 E-beam을 이용하여 형성된 ITO 박막에 HCl solution을 이용하여 자기정렬 ITO Dot 형성 후 n-AlGaInP Vertical LED[VLED] 표면에 nano pillar의 두께에 각기 다르게 형성하였으며, 최종적으로 제작된 VLED의 전기적, 광학적 특성을 조사하였다.

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Electrical Characteristics of Ti Self-Aligned Silicide Contact (Ti Self-Aligned Silicide를 이용한 Contact에서의 전기적 특성)

  • 이철진;허윤종;성영권
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.41 no.2
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    • pp.170-177
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    • 1992
  • Contact resistance and contact leakage current of the Al/TiSiS12T/Si system are investigated for NS0+T and PS0+T junctions. SALICIDE (Self Aligned Silicide) process was used to make the Al/TiSiS12T/Si system. Titanium disilicide is one of the most common silicides because of its thermal stability, ability to form selective formation and low resistivity. In this paper, RTA temperature effect and Junction implant dose effect were evaluated to characterize contact resistance and contact leakage current. The TiSiS12T contact resistance to NS0+T silicon is lower than that to PS0+T silicon, and TiSiS12T of contact leakage current to NS0+T silicon is lower than that to PS0+T silicon. Contact resistance and contact leakage current of the Al/TiSiS12T/Si system by this method were possible for VLSI application.

Material properties of In$_{0.53}$Ga$_{0.47}$As$_{0.52}$Al$_{0.48}$As MQWs grown on InP substrates by low-temperature molecular beam epitaxy (InP 기판위에 저온 분자선 에피탁시로 성장된 In$_{0.53}$Ga$_{0.47}$As$_{0.52}$Al$_{0.48}$As 다중 양자 우물의 특성 평가)

  • 이종수;최우영
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.5
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    • pp.80-86
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    • 1998
  • Material characterizations were performed for In$_{0.53}Ga_{0.47}As/In$_{0.52}Al_{0.48}$/As MQWs grown on InP substrates by low-temperature modlecular beam epitaxy. MQW samples were grwon at different temperatures of 200.deg.C, 300.deg. C and 500.deg. C, and doped with 10$^{18}$ cm$^{3}$ Be. High resolution x-ray diffraction measurement showed the change in crystal qualities according to growth temperature. Hall measurement showed the changes in carrier concentrations and mobilities for different growth temperatures. The optical properties of MQW samples were investigated with photoluminescence and fourier-transform infrared spectroscopy measurements.

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Red emission organic light-emitting diode with electrochemically deposited PANI-CSA layer

  • Kim, Ju-Seung;Kim, Dae-Jung;Gu, Hal-Bon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.08a
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    • pp.81-84
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    • 2003
  • Conductive polyaniline(PANI)-camphosulfonic acid (CSA) film applied as a hole injection layer in ITO/PANI/P3HT/LiF/Al device. In the AFM images, electrochemically polymerized PANI-CSA films have the small particles and smooth sufficient for application as hole injection layer. By insertion of PANI-CSA buffer layer, the turn on voltage of ITO/PANI/P3HT/LiF/Al device lowed by 3V, whereas that of ITO/P3HT/LiF/Al device shows 5V.

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Studies on AlF3-(Mg+Sr+Ba)F2-P2O5 Glasses I. Glass Forming Ranges of Fluorophosphate System and Its Various Properties (AlF3-(Mg+Sr+Ba)F2-P2O5계 유리에 관한 연구 I. 유리화 범위와 특성)

  • 김정은;이종근
    • Journal of the Korean Ceramic Society
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    • v.24 no.2
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    • pp.117-122
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    • 1987
  • Glass forming ranges in the AlF3-(Mg+Sr+Ba)F2-P2O5 system are studied and ultraviolet transmission, infrared transmission, coefficient of refractive index, thermal expansion coefficient, density and chemical durability of the glasses are determined. Glass forming range is restricted MgF2 0-10wt%, SrF2 10-50wt%, BaF2 10-40wt% in this system. While BaF2 is substituted by SrF2, density and refractive index are decreased, micro hardness and thermal expansion coefficient are increased according to the increasing of SrF2 at fixed MgF2 contents. These samples represent high transmittance(93%) from 400nm to 3800nm and chemical durability of these samples show less than 0.3mg/$\textrm{cm}^2$$.$hy by weightloss.

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manufacture and Characterization of Glass Ceramics of P2O3-PbO-SiO2-Al2O3 System for Ic Substrate (P2O3-PbO-SiO2-Al2O3계 회로기판용 glass ceramics의 제조 및 특성평가)

  • 김용철
    • Journal of the Microelectronics and Packaging Society
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    • v.4 no.2
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    • pp.55-62
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    • 1997
  • P2O3-PbO-SiO2-Al2O3계 조성을 이용하여 저온에서 소결이 가증하며 열팽창계수와 유전율이 낮은 회로기판용 glass ceramics를 제조하고자 하였다. 155$0^{\circ}C$에서 2시간 동안 용 융하여 제조한 모유리의열팽창 거동을 확인하기 위하여 TMA로 열분석을 실시하였으며 이 유리를 분말화하여 80$0^{\circ}C$에서 열처리 하였다. 이때 cristobalite 형성억제제로 Ga2O3를 사용 하였으며 Ga2O3 첨가량에 따른 억제 영향을 XRD를 통행 확인하였다. Ga2O3를 첨가한 유리 분말로 pellet을 제조하여 열처리를 하였고 소결시편의 표면을 SEM을 통해 관찰하였다. 열 처리한 pellet에 silver paste를 screen printing하여 유전율을 측정하였으며 조성에 따른 유 전율의 변화를 확인하였다.

Properties of ZnO:Al films on polymer substrates by low temperature process

  • Jung, Yu-Sup;Kim, Kyung-Hwan
    • Journal of the Semiconductor & Display Technology
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    • v.8 no.3
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    • pp.57-60
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    • 2009
  • Transparent electrode ZnO:Al(AZO)films were deposited on a PES (polyethersulfone) polymer substrate for thin film solar cells applications. A PES substrate with a thickness of 0.2mm and transmittance > 90% in the visible range was used because it is light weight and can deform easily. AZO thin films were prepared at a fixed DC power, $PO_2\;=\;P(O_2)/[P(O_2)\;+\;P(Ar)]$, and various substrate temperatures. The properties of AZO thin films were examined by X-ray diffraction, UV/VIS spectroscopy, four-point probe, Hall measurements, and field emission scanning electron microscopy. The lowest resistivity of all the films was $4.493\;{\times}\;10^{-4}\;[\Omega-cm]$ and the transmittance was > 80% in the visible range.

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