• Title/Summary/Keyword: Al-P

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Research on inorganic phosphorus fraction of Hwa-seong lake (화성호 무기태 인의 형태별 특성 조사)

  • Kim, Tae-Hoon;Ahn, Tae-Woong;Jung, Jae-Hoon;Choi, I-Song;Oh, Jong-Min
    • Proceedings of the Korea Water Resources Association Conference
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    • 2010.05a
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    • pp.1902-1905
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    • 2010
  • 일반적으로 퇴적물로부터 인의 용출은, 산소조건, 수온, 유속 등 여러 환경의 변화에 의해서 이루어지며, 환경에 따라 용출되는 인의 형태 또한 다르다. 따라서 어떠한 기작을 통해 얼마나 많은 양의 인이 용출되는지는 수체의 물리 화학적 조건과 퇴적물에 포함된 인의 존재형태에 의해 결정된다. 따라서 본 연구에서는 담수호의 부영양화 원인물질이면서 부영양화 발생을 제어할 수 있는 가장 중요한 인자로 작용하는 인의 거동특성을 파악하기 위하여 이루어 졌다. 본 연구는 경기도 화성시에 위치한 화성호에서 이루어 졌으며, 대표성을 나타낼 수 있는 3개의 지점을 선별하였다. 퇴적물은 Grap sampler를 이용하여 채취하였으며. Methods for P Analysis, G. M. Pierzynski(2009, G,m Pierzynski)에 의거하여 무기태 인을 loosely and soluble P, Al-P, Fe-P, Reductant soluble-P, Ca-P 5가지 형태로 분류하여 진행하였다. 화성호 퇴적물의 인의 형태별 분류를 실시하여 화성호 퇴적물 내의 무기태 인의 형태 분류와 이를 분석함으로서 인 용출에 의한 수질오염 가능성을 평가해보고자 하였다. 무기태 인의 형태는 세지점 모두 Fe-P > Al-P > Loosely and soluble-P > Reductant Soluble-P > Ca-P 비율로 나타났다. 가장 높은 비율을 차지하고 있는 Al-P 및 Fe-P의 경우, 호소수의 pH에 영향을 크게 받으며 특히 높은 pH에서 수층으로 용출이 활발히 일어날 수 있고, 호소의 물질순환에 있어서 다른 형태의 인보다 식물체에 단기간 이용될 수 있다는 점 때문에 관심이 높은 형태이다. 주로 이들 형태는 도시하수 및 산업폐수의 유입으로 인하여 영향을 받는다. 본 조사결과에서 화성호의 pH는 모든 지점에서 중성인 것으로 조사되었기 때문에 용출가능성은 상대적으로 적다고 판단된다.

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Studies on Heat Sensitivity of Egg Albumen II. Effects of pH and/or the Addition of Metal ions on Heat Sensitivity of Egg Albumen (난백의 숙감수성에 관한 연구 II. 금속염의 첨가와 pH가 난백의 열감수성에 미치는 영향)

  • 유익종;이성기;김영붕
    • Korean Journal of Poultry Science
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    • v.16 no.1
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    • pp.17-22
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    • 1989
  • In order to dull heat sensitivity of egg albumen, metal ions (aluminium, ferric, ferrous, copper) were added and functional properties or egg albumen were determined before and after heat treatment at $60^{\circ}C$ for 5 minutes. Effect of pH on heat sensitivity of aluminium salt added egg albumen was also determined. Addition of metal ions increased turbidity of egg albumen before and after the heat treatment. Changes of the turbidity were minimized by addition of aluminium salt. The foaming power was markedly increased by addition of ferric salt before the heat treatment and increased by addition of aluminium, ferric and copper salt after the heat treatment. Before the heat treatment the foam was stable by addition of ferric and ferrous salt but after the heat treatment it was stable by addition of aluminium and ferric salt. The turbidity and foaming property of the egg albumen with aluminium salt were not largely changed after the heat treatment at pH range 7 to 8.5. Over pH 9 the turbidity and foaming power were not decreased, but the foam stability was increased before and after the heat treatment. Salmonella typhimurium ATCC 14028 (10$^{6}$ cells/$m\ell$) inoculated in egg albumen at pH range 7 to 8.5 was destructed by the heat treatment.

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Study of Selective Etching of GaAs over AlGaAs and InGaP Semiconductors in High Density Planar Inductively Coupled BCl3/SF6 Plasmas (고밀도 평판형 유도결합 BCl3/SF6 플라즈마를 이용한 GaAs/AlGaAs와 InGaP 반도체의 선택적 식각에 관한 연구)

  • Yoo Seungryul;Ryu Hyunwoo;Lim Wantae;Lee Jewon;Cho Guan Sik;Jeon Minhyon;Song Hanjung;Lee BongJu;Ko Jong Soo;Go Jeung Sang;Pearton S. J.
    • Korean Journal of Materials Research
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    • v.15 no.3
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    • pp.161-165
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    • 2005
  • We investigated selective dry etching of GaAs over AlGaAs and InGaP in high density planar inductively coupled $BCl_3/SF_6$ plasmas. The process parameters were ICP source power (0-500 W), RE chuck power (0-30W) and gas composition $(60-100\%\;BCl_3\;in\;BCl_3/SF_6)$. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching. $BCl_3/SF_6$ selective etching of GaAs showed quite good results in this study. Selectivities of GaAs $(GaAs:AlGaAs\~36:1,\;GaAs:InGaP\~45:1)$ were superior at $18BCl_3/2SF_6$, 20 W RF chuck power, 300 W ICP source power and 7.5 mTorr. Addition of $(5-15\%)SF_6\;to\;BCl_3$ produced relatively high selectivities of GaAs over AlGaAs and InGaP during etching due to decrease of etch rates of AlGaAs and InGaP (boiling points of etch products: $AlF_3\~1300^{\circ}C,\;InF_3>1200^{\circ}C$ at atmosphere) at the condition. SEM and AFM data showed slightly sloped sidewall and somewhat rough surface$(RMS\~9nm)$. XPS study on the surface of processed GaAs proved a very clean surface after dry etching. It shows that planar inductively coupled $BCl_3/SF_6$ plasmas could be a good candidate for selective dry etching of GaAs over AlGaAs and InGaP.

A Study on the Breakdown in MHEMTs with InAlAs/InGaAs Heterostructure Grown on the GaAs substrate (InAlAs/InGaAs/GaAs MHEMT 소자의 항복 특성에 관한 연구)

  • Son, Myung-Sik
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.11
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    • pp.1-8
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    • 2011
  • One of the most important parameters that limit maximum output power of transistor is breakdown. InAlAs/InGaAs/GaAs Metamorphic HEMTs (MHEMTs) have some advantages, especially for cost, compared with InP-based ones. However, GaAs-based MHEMTs and InP-based HEMTs are limited by lower breakdown voltage for output power even though they have good microwave and millimeter-wave frequency performance with lower minimum noise figure. In this paper, InAlAs/$In_xGa_{1-x}As$/GaAs MHEMTs are simulated and analyzed for breakdown. The parameters affecting breakdown are investigated in the fabricated 0.1-${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ heterostructure on the GaAs wafer using the hydrodynamic transport model of a 2D commercial device simulator. The impact ionization and gate field effect in the fabricated device including deep-level traps are analyzed for breakdown. In addition, Indium mole-fraction-dependent impact ionization rates are proposed empirically for $In_{0.52}Al_{0.48}As/In_xGa_{1-x}As$/GaAs MHEMTs.

A Study on the Effects of Addition Elements on the Refinement of Primary Si Particles in Hypereutectic Al-Si alloys (과공정 Al-Si 합금의 초정 Si입자의 미세화에 미치는 첨가원소의 영향에 관한 연구)

  • Kim, Gyeong-Min;Go, Seung-Un;Yun, Ui-Park
    • Korean Journal of Materials Research
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    • v.5 no.4
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    • pp.412-419
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    • 1995
  • 과공정 Al-18wt%Si합금의 초정 Si입자의 미세화에 미치는 첨가원소의 영향에 관하여 조사하였다. 초정 Si입자의 크기는 P량이 증가함에 따라 미세해졌으며 적정 P량은 40ppm이었다. 최적주입온도는 AlCuP, CuP 경우 각각 75$0^{\circ}C$, 80$0^{\circ}C$이었으며 미세화 처리 후 10분 이상 경과되어도 초정 Si입자의 크기는 변화가 없었다. 또한 WDS분석 결과 초정 Si내에 AIP가 핵생성 site로 존재함을 알 수 있었다.

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Conformal $Al_2$O$_3$ Nanocoating of Semiconductor Nanowires by Atomic Layer Deposition

  • Hwang, Joo-Won;Min, Byung-Don;Kim, Sang-Sig
    • KIEE International Transactions on Electrophysics and Applications
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    • v.3C no.2
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    • pp.66-69
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    • 2003
  • Various semiconductor nanowires such as GaN, GaP, InP, Si$_3$N$_4$, SiO$_2$/Si, and SiC were coated conformally with aluminum oxide (Al$_2$O$_3$) layers by atomic layer deposition (ALD) using trimethylaluminum (TMA) and distilled water ($H_2O$) at a temperature of 20$0^{\circ}C$. Transmission electron microscopy (TEM) revealed that A1203 cylindrical shells conformally coat the semiconductor nanowires. This study suggests that the ALD of $Al_2$O$_3$ on nanowires is a promising method for preparing cylindrical dielectric shells for coaxially gated nanowire field-effect transistors.

Effect of Al2O3 on Crystallization Behavior and Microstructure of Na2O-CaO-P2O5-SiO2 Glass-ceramic System

  • Mirhadi, Bahman;Mehdikhani, Behzad
    • Journal of the Korean Ceramic Society
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    • v.49 no.2
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    • pp.146-150
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    • 2012
  • The effects of $Al_2O_3$ on the crystallization behavior of glass compositions in the $Na_2O$-CaO-$SiO_2$ system were investigated by differential thermal analysis (DTA), X-ray diffraction (XRD), and scanning electron microscopy (SEM). The effect of $Al_2O_3$ content on the mechanical properties, density, phase formation, and microstructures of $Na_2O$-CaO-$P_2O_5$-$SiO_2$ glass ceramics were studied. The thermal parameters of each glass were studied by DTA. The density of the glass ceramic samples was measured by Archimedes' method. It was found that the glass-ceramic containing 2.0 molar percent $Al_2O_3$ had desirable sintering behavior and reached an acceptable density. Phase investigation and micro-structural analysis were performed by XRD and SEM, respectively.

Blended Elemental P/M Synthesis of Titanium Alloys and Titanium Alloy-based Particulate Composites

  • Hagiwara, Masuo;Emura, Satoshi
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09b
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    • pp.1030-1031
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    • 2006
  • Titanium alloys and Titanium alloy-based particulate composites were synthesized using the blended elemental P/M route. First, processing conditions such as the fabrication of master alloy powder were investigated. Ti-6Al-4V, Ti-5Al-2.5Fe, Ti-6Al-2Sn-4Zr-2Mo, IMI685, IMI829, Timetal 1100 and Timetal 62S, and Ti-6Al-2Sn-4Zr-2Mo/ 10%TiB and Timetal 62S/10%TiB were then synthesized using the optimal processing conditions obtained. The microstructures and mechanical properties such as tensile strength and high cycle fatigue strength were evaluated.

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Effect of Short Circuit Current Enhancement in Solar Cell by Quantum Well Structure and Quantitative Analysis of Elements Using Secondary Ion Mass Spectrometry (양자우물구조에 의한 태양전지 단락전류 증가 효과와 이차이온 질량분석법에 의한 원소 정량 분석)

  • Kim, Junghwan
    • Applied Chemistry for Engineering
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    • v.30 no.4
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    • pp.499-503
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    • 2019
  • Characteristics of solar cells employing a lattice matched GaInP/GaAs quantum well (QW) structure in a single N-AlGaInP/p-InGaP heterojunction (HJ) were investigated and compared to those of solar cells without QW structure. The epitaxial layers were grown on a p-GaAs substrate with $6^{\circ}$ off the (100) plane toward the <111>A. The heterojunction of solar cell consisted of a 400 nm N-AlGaInP, a 590 nm p-GaInP and 14 periods of a 10 nm GaInP/5 nm GaAs for QW structure and a 800 nm p-GaInP for the HJ structure (control cell). The solar cells were characterized after the anti-reflection coating. The short-circuit current density for $1{\times}1mm^2$ area was $9.61mA/cm^2$ for the solar cell with QW structure while $7.06mA/cm^2$ for HJ control cells. Secondary ion mass spectrometry and external quantum efficiency results suggested that the significant enhancement of $J_{sc}$ and EQE was caused by the suppression of recombination by QW structure.

Buffer Capacities of Forest Soils by the Treatment of Simulated Acid Rain (인공산성우 처리에 대한 삼림토양의 완충능)

  • 진현오;이계성;정동준
    • Korean Journal of Agricultural and Forest Meteorology
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    • v.4 no.1
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    • pp.49-57
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    • 2002
  • This study was conducted to find out buffer capacities of forest soils by the treatment of simulated acid rain(SAR) of four forests(Q. spp., P. rigida, P. koraiensis, L. leptolepis) in Kyunghee university's practice forest. All soils of each forest stand were treated by simulated acid rain at the level of pH 3.0, 4.0, 5.0 respectively. The result obtained from this study can be summarized as follows: Soil pH was measured by soil depth of each forest stand. The deeper soil depth was, the higher soil pH was. Also it was appeared that base saturation of sample soils was the highest as 17.42% in P. rigida stand and cation exchange capacity(C.E.C) was the highest as 29.87 me/100 g in Q. spp. stand. for responses of soil leachates to acidification treatment with pH 3.0 simulated acid rain(SAR), as simulated acid rain(SAR)-input was increased, pH value of soil leachates appeared high temporarily, but soon pH value of soil leachates had been low gradually. At the rest of pH 4.0, pH 5.0 treatment, pH value of soil leachates was high proportionably. The amounts of TBC of primary stage had a difference as pH level of simulated acid rain and forest stands. But as simulated acid rain(SAR)-input was increased. Amount of TBC was diminished. Also the amounts of TBC of primary stage in acidification treatment with pH 3.0, 4.0 simulated acid rain(SAR) was higher that of acidification treatment with pH 5.0 simulated acid rain(SAR). These trend showed obvious difference at low soil acidity and high TBC. The amounts of activity Al of primary stage appeared high as increasing the input acidity of simulated acid rain(SAR). Also, by soil depth, the amounts of Activity Al was different between A layer(0-15 cm) and AB layer(0-30 cm). There was considerable the correlation between simulated acid rain-input and activity Al change. But this was oppositional trend in soil leachates of pH 4.0, 5.0 treatment and total base cations(TBC).