• 제목/요약/키워드: Al-P

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P-형 ZnO 박막 특성 안정성 향상에 대한 연구 (Study on Stability Enhancement of P-type ZnO Thin Film Properties)

  • 남형진;차경환
    • 한국산학기술학회논문지
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    • 제8권3호
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    • pp.472-476
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    • 2007
  • 본 연구에서는 p-형 ZnO 박막 증착법 및 특성의 안정화 방안에 대하여 조사하였다. p-형 ZnO는 AlAs와 ZnO target을 사용하여 RF magnetron sputtering 기법으로 co-deposition하여 제작하였으며 특성 변화를 조사하기 위해 $250^{\circ}C$에서 144시간까지 스트레스 인가 시간을 변화하며 Photoluminescence 및 Hall 측정을 수행하였다. 연구 결과 co-deposition 은 p-형 박막을 제작하기 위해 유효한 방법인 것으로 밝혀졌으며, 특히 고온에서 이루어지는 과정을 수행하기 전 30% H2O2용액에 1분간 처리하는 것이 이후의 열처리 과정 중 발생하는 특성 변화를 크게 억제하는 것으로 관찰되었다.

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ZnO:As/ZnO:Al homo-junction LED의 V-I 특성 분석 (Analysis on the V-I Curve of ZnO:As/ZnO:Al homo-junction LED)

  • 오상현;정윤환;유연연;박춘배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.410-411
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    • 2007
  • To investigate the ZnO LED which are interested in the next generation of short wavelength LEDs and Lasers, the ZnO thin films were deposited by RF magnetron sputtering system. The p-type ZnO thin film, fabricated by means of the ampoule-tube method, was used to make the ZnO p-n junction, and its characteristics was analyzed. The ampoule-tube method was used to make the p-type ZnO based on the As diffusion, and the hall measurement was used to confirm that the p-type is formed. the current-voltage characteristics of the ZnO p-n junction were measured to confirm the rectification characteristics of a typical p-n junction and the low leakage voltage characteristics. Analysis of ZnO LED V-I curve will provide a very useful technology for producing the UV ZnO LED and ZnO-based devices.

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산지토양(山地土壤)의 특성(特性)과 개량(改良) (Soil Characteristics and Improvement of Reclaimable Hillside Land)

  • 류인수
    • 한국토양비료학회지
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    • 제11권4호
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    • pp.247-262
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    • 1979
  • Majority of reclaimable soils in hillside lands in Korea are red yellow soils, with exception in Jeju island, where most of reclaimable hillside lands are composed of volcanic ash soils. Songjeong, Yesan and Samgag series are the major soil series of red yellow soils which are available for the reclamation. When observed in the fields, they are distinguished as reddish brown clay loam, red yellow sand loam and yellowish brown sand loam. They have moderately good physical properties but their chemical properties are generally poor for crop cultivations. The chemical properties of red yellow soils, as compared to long time cultivated (matured) soils, are characterized by very low pH, high in exchangeable Al content and phosphorus fixation capacity. Also extraodinary low available phosphorus and organic matter contents are generally observed. On the other, the chemical properties of volcanic ash soils are characterized by high armophous Fe and Al hydroxides and organic matter contents, which are the causative factors for the extremely high phosphorus fixation capacity of the soils. The phosphorus fixation capacity of volcanic acid soils are as high as 5-10 times of that of red yellow soils. Poor growth of crops on newly reclaimed red yellow soils are mainly caused by very low available P and pH and high exchangeable Al. Relatively high P fixation capacity renders the failure of effective use of applied P when the amount of application is not sufficient. Applications of lime to remove the exchangeable Al and relatively large quantity of P to lower the P fixation capacity and to increase the available P are the major recommendations for the increased crop production on red yellow hillside soils. Generally recommendable amounts of lime and P to meet the aforementioned requirements, are 200-250kg/10a of lime and $30-35kg\;P_2O_5/10a$. Over doses of lime. frequently induces the K, B, arid Zn deficiencies and lowers the uptake of P. In volcanic ash soils, it is difficult to alter the exchangeable Al and the P fixation capacity by liming and P application. This may be due to the peculiarity of volcanic ash soil in chemical properties. Because of this feature, the amelioration of volcanic ash soils is not as easy as in the case of red yellow soils. Application of P as high as $100kg\;P_2O_5/10a$ is needed to bring forth the significant yield response in barley. Combined applications of appropriate levels of P, lime, and organic matter, accompanied by deep plowing, results in around doubling of the yields of various crops on newly reclaimed red yellow soils.

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저압주조에 의한 자동차 Al Wheel의 제조(I) : 유동 및 응고해석 (Production of Automobile Al Wheel by Low-Pressure Die Casting (I) : Flow and Solidification Simulation)

  • 추인호;류성곤;최정길
    • 한국주조공학회지
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    • 제18권6호
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    • pp.578-585
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    • 1998
  • A multi-purpose code MAGMA was employed for mold design and process control in producing Al wheel by lowpressure die casting. Three-dimensional solid modeling was followed by mesh generation of casting and molds(top, bottom and side). The simulation of stability of casting cycle time, mold filling simulation with pressure variation from P1 to P2, solidification simulation by solidification time and feeding criteria, and temperature distribution of molds during processes were studied in this research. The thermal stability of molds was attained after 5 cycles when molds were preheated at $400^{\circ}C$. The pressure increase from P1 to P2 for mold filling was evaluated as slightly higher, and 6 seconds were taken for the mold filling. The cycle time was believed to be designed properly judged from the solidification time of casting and open/close time of molds.

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방크스소나무 및 산오리나무의 발아와 묘목의 생장에 미치는 Mn과 Al의 영향 (The Effect of Manganese and Aluminium on the Germination of the Seeds of Pinus banksiana and Alnus tinctoria)

  • 강상준
    • Journal of Plant Biology
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    • 제10권3_4호
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    • pp.4-9
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    • 1967
  • The aim of present study is to elucidate the effects of manganese and aluminium ions on the germination and seedling growth of Pinus banksiana and Alnus tinctoria and to estimate the limiting level of those ions in the cultivated soils. The rate of germination of Pinus banksiana was increased under the relatively low concentration of Mn and Al (100 p.p.m), however, the germinating activity was not affected. High concentration over 110 p.p.m. of Mn and Al was related to the reduced percentage of germination and seedling growth of Pinus banksiana and Alnus tinctoria. Soils sampled from various parts of Korea contained Mn as much as high level that would be harmful for the seedling growth of Pinus banksiana and Alnus tinctoria.

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PCS용 전력 AlGaAs/InGaAs 이중 채널 P-HEMTs의 제작과 특성 (Fabrication and Characterization of Power AlGaAs/InGaAs double channel P-HEMTs for PCS applications)

  • 이진혁;김우석;정윤하
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1999년도 추계종합학술대회 논문집
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    • pp.295-298
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    • 1999
  • AlGaAs/InGaAs power P-HEMTS (Pseudo-morphic High Electron Mobility Transistors) with 1.0-${\mu}{\textrm}{m}$ gate length for PCS applications have been fabricated. We adopted single heterojunction P-HEMT structure with two Si-delta doped layer to obtain higher current density. It exhibits a maximum current density of 512㎃/mm, an extrinsic transconductance of 259mS/mm, and a gate to drain breakdown voltage of 12.0V, respectively. The device exhibits a power density of 657㎽/mm, a maximum power added efficiency of 42.1%, a linear power gain of 9.85㏈ respectively at a drain bias of 6.0V, gate bias of 0.6V and an operation frequency of 1.765㎓.

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$Al_{2}O_{3}$ crystal의 유전손실계수 측정에 관한 연구 (A study on dielectric loss tangent measurement with $Al_{2}O_{3}$ crystal)

  • 이종찬;인여훈;이래덕;박대희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1996년도 하계학술대회 논문집 C
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    • pp.1466-1468
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    • 1996
  • The standards of the capacitance arc measured and analyzed by the dry nitrogen or mica film as a dielectric. In this paper, respectively the standard capacitors of 10 pF and 100 pF for the establishment of the dielectric loss tangent are made by $Al_{2}O_{3}$ crystal disc with the low dielectric loss tangent, and then measured the dielectric loss tangent with precision. To regard for the existence of capacitances just in the dielectric, 3-terminal configuration electrode is used. With using the 2D electric field simulator, precise design values are derived in addition to stray capacitance. As stated above method, respectively the standards of the capacitances with 10 pF and 100 pF arc made with the low dielectric loss tangent less than $10^{-4}$.

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$Ta_2O_5/Al/SiO_2/P-Si$ MIS형(形) 태양전지(太陽電池)의 제작(製作)과 특성(特性) (Fabrication and Characteristics of $Ta_2O_5/Al/SiO_2/p-Si$ MIS Solar Cells)

  • 노경석;손연규
    • 태양에너지
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    • 제6권2호
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    • pp.70-75
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    • 1986
  • The fabrication procedure and characteristics of $Ta_2O_5/Al/SiO_2/p-Si$ MIS solar cells forming a fine grating pattern of aluminum evaporated on to p-type silicon crystal are discribed. The proper temperature for oxide growing of these cells was found to be about $450^{\circ}C$ for 20 minutes with oxygen flow. The conversion efficiency increased about 3% after $750{\AA}$ thickness of tantalium silica film spin on anti-reflective coating. The best results showed that $V_{oc}=0.545V,\;J_{sc}=34mA$ and F.F = 0.65, which represent that the conversion efficiency is 12%.

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Reflectance Spectrum of Main Belt Asteroid P/2010 A2

  • 김준한
    • 천문학회보
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    • 제36권1호
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    • pp.41.2-41.2
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    • 2011
  • P/2010 A2, a main-belt asteroid having comet-like dust trail was discovered in January 2010, but the origin of the trail is controversial. Moreno et al. (2010) reported water-ice sublimation as a mechanism for the comet-like activity, whereas other researches (Jewitt et al. 2010; Snodgrass et al. 2010) stated that impact collision contributed to the dust trail. For asteroids are categorized based on spectral shape, optical observation using different color filters makes it possible to determine the taxonomic type of P/2010 A2 nucleus, thus gives an answer to the question of activation mechanism of the object. In this presentation, we report multiband observation of P/2010 A2 in January and March 2010 with 1-meter telescope of Ishigaki-Jima Astronomical Observatory. We employed three broadband filters of g', Rc, and Ic. In this presentation, we focus on the data acquisition, the reduction and the derivation of the reflectance spectrum of debris in the trail. Finally we discuss the potential cause of dust ejection from this asteroid.

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High-k 물질의 적층을 통한 고신뢰성 EIS pH 센서

  • 장현준;김민수;정홍배;이영희;조원주
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.129-129
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    • 2011
  • ISFET (ion sensitive field effect transistor)는 용액 중의 각종 이온 농도를 측정하는 반도체 이온 센서이다. ISFET는 작은 소자 크기, 견고한 구조, 즉각적인 반응속도, 기존의 CMOS공정과 호환이 가능하다는 장점이 있다. ISFET의 기본 구조는 기존의 MOSFET (metal oxide semiconductor field effect transistor)에서 고안되었으며, ISFET는 기존의 MOSFET의 게이트 전극 부분이 기준전극과 전해질로 대체되어진 구조를 가지고 있다. ISFET소자의 pH 감지 메커니즘은 감지막의 표면에서 pH용액 속의 이온들이 감지막의 표면에서 속박되어 막의 표면전위의 변화를 유발하는 것을 이용한다. 그 결과, ISFET의 문턱전압의 변화를 일으키게 되고 드레인 전류의 양 또한 달라지게 된다. ISFET의 높은 pH감지능력을 얻기 위하여 높은 high-k물질 들이 감지막으로서 연구되었다. Al2O3와 HfO2는 높은 유전상수, non-ideal 효과에 대한 immunity 그리고 높은 pH 감지능력 등 많은 장점을 가지고 있는 물질로 알려졌다. 본 연구에서는, SiO2/HfO2/Al2O3 (OHA) 적층막을 이용한 EIS (electrolyte- insulator-silicon) pH센서를 제작하였다. EIS구조는 ISFET로의 적용이 용이하며 ISFET보다 제작 방법과 소자 구조가 간단하다는 장점이 있다. HfO2은 22~25의 높은 유전상수를 가지며 높은 pH 감지능력으로 인하여 감지막으로서 많은 연구가 이루어지고 있는 물질이다. 하지만 HfO2의 물질이 가진 고유의 특성상 화학적 용액에 대한 non-ideal 효과는 다른 금속계열 산화막에 비하여 취약한 모습을 보인다. 반면에 Al2O3의 유전상수는 HfO2보다 작지만 화학용액으로 인한 손상에 대하여 강한 immunity가 있는 재료이다. 이러한 물질들의 성질을 고려하여 OHA의 새로운 감지막의 적층구조를 생각하였다. 먼저 Si과 high-k물질의 양호한 계면상태를 이루기 위하여 5 nm의 얇은 SiO2막을 완충막으로서 성장시켰다. 다음으로 높은 유전상수를 가지고 있는 8 nm의 HfO2을 증착시킴으로서 소자의 물리적 손상에 대한 안정성을 향상시켰다. 최종적으로 화학용액과 직접적인 접촉이 되는 부분은 non-ideal 효과에 강한 Al2O3을 적층하여 소자의 화학적 손상에 문제점을 개선시켰다. 결론적으로 감지막의 적층 모델링을 통하여 각각의 high-k 물질이 가진 고유의 특성에 대한 한계점을 극복함으로써 높은 pH 감지능력뿐만 아니라 신뢰성 있는 pH 센서가 제작 되었다.

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