• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.129-130
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• 1994

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.05a
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• pp.104-104
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• 1998

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05a
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• pp.145-145
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• 1992

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1999.04a
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• pp.19-20
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• 1999

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1995.11a
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• pp.23-23
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• 1995

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1995.11a
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• pp.22-22
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• 1995

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.374-377
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• 2001

We have synthesized poly(3-hexylthiophene)(P3HT), which is the most famous conducting polymer and studied the optical properties of P3HT. And then fabricated the device using P3HT as an emitting layer. For the improve of hole injection from ITO electrode to P3HT emitting layer, we use transparent polyaniline(PANI) electrode. In the voltage-current-luminance characteristics of ITO/PANI/P3HT/LiF/Al device which use the PANI film synthesised during 5 cycle, the device turn on at the 2V and the luminance of $218nW/cm^{2}$ obtained at 12V. External quantum efficiency of ITO/PANI/P3HT/LiF/Al increased at 8V than that of ITO/P3HT/LiF/Al device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.374-377
• /
• 2001

We have synthesized poly(3-hexylthiophene)(P3HT), which is the most famous conducting polymer and studied the optical properties of P3HT. And then fabricated the device using P3HT as an emitting layer. For the improve of hole injection from ITO electrode to P3HT emitting layer, we use transparent polyaniline(PANI) electrode. In the voltage-current-luminance characteristics of ITO/PANI/P3HT/LiF/Al device which use the PANI film synthesised during 5 cycle, the device turn on at the 2V and the luminance of 218 nW/$\textrm{cm}^2$ obtained at 12V. External quantum efficiency of ITO/PANI/P3HT/LiF/Al increased at 8V than that of ITO/P3HT/LiF/Al device.

• Journal of the Mineralogical Society of Korea
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• v.32 no.2
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• pp.79-86
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• 2019

The white aluminum phases in acid mine drainage usually precipitates when mixed with stream waters with relatively high pH. The minerals in white precipitates play important roles in controlling the behavior of heavy metals by adsorbing and coprecipitation. By the phase transition of these minerals in white precipitates, dissolution and readsorption of heavy metals may occur. This study was conducted to obtain preliminary information on the phase transition of the mineral phases in white precipitates. In this study, the mineral phase changes in the white precipitates collected from the stream around Dogye Mining Site over time were investigated with different pH values and temperatures. White precipitates consist mainly of basaluminite, amorphous $Al(OH)_3$ and a small amount of $Al_{13}$-tridecamer. During aging, the incongruent dissolution of the basaluminite occurs first, increasing the content of the amorphous $Al(OH)_3$. After that, pseudoboehmite is finally precipitated following the precursor phase of pseudoboehmite. At $80^{\circ}C$, this series of processes was clearly observed, but at relatively low temperatures, no noticeable changes were observed from the initial condition with coexisting basaluminite and amorphous $Al(OH)_3$. At high pH, the desorption of $SO{_4}^{2-}$ group in basaluminite was initiated to promote phase transition to the pseudoboehmite precursor. Over time, the solution pH decreases due to the dissolution and phase transition of the minerals, and even after the precipitation of pseudoboehmite, only the particle size slightly increased but no clear cystal form was observed.

• Journal of the Korean institute of surface engineering
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• v.50 no.3
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• pp.219-224
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• 2017

The K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films was investigated using SIMS(secondary ion mass spectrometry) and XPS(X-ray Photoelectron Spectroscopy) analysis. DC magnetron sputter techniques and APCVD(atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and $SiO_2/PSG/SiO_2$ passivations, respectively. Heat treatment was carried out at $400^{\circ}C$ for 5 h in air. SIMS depth profiling was used to determine the distribution of K, Al, Si, P and other elements throughout the $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films. XPS was used to analyze binding energies of Si and P elements in PSG passivation layers. K peaks were observed throughout the $PSG/SiO_2$ passivation layers on the Al-1%Si thin films and especially at the $PSG/SiO_2$ interfaces. K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and P elements in PSG passivation appears to be $SiO_2$ and $P_2O_5$, respectively