• 제목/요약/키워드: Al-B-C additive

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THE DRAZIN INVERSE OF THE SUM OF TWO PRODUCTS

  • Chrifi, Safae Alaoui;Tajmouati, Abdelaziz
    • 대한수학회논문집
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    • 제37권3호
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    • pp.705-718
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    • 2022
  • In this paper, for bounded linear operators A, B, C satisfying [AB, B] = [BC, B] = [AB, BC] = 0 we study the Drazin invertibility of the sum of products formed by the three operators A, B and C. In particular, we give an explicit representation of the anti-commutator {A, B} = AB + BA. Also we give some conditions for which the sum A + C is Drazin invertible.

A NOTE ON NONLINEAR SKEW LIE TRIPLE DERIVATION BETWEEN PRIME ⁎-ALGEBRAS

  • Taghavi, Ali;Nouri, Mojtaba;Darvish, Vahid
    • Korean Journal of Mathematics
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    • 제26권3호
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    • pp.459-465
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    • 2018
  • Recently, Li et al proved that ${\Phi}$ which satisfies the following condition on factor von Neumann algebras $${\Phi}([[A,B]_*,C]_*)=[[{\Phi}(A),B]_*,C]_*+[[A,{\Phi}(B)]_*,C]_*+[[A,B]_*,{\Phi}(C)]_*$$ where $[A,B]_*=AB-BA^*$ for all $A,B{\in}{\mathcal{A}}$, is additive ${\ast}-derivation$. In this short note we show the additivity of ${\Phi}$ which satisfies the above condition on prime ${\ast}-algebras$.

상압소결(常壓燒結)한 SiC-$ZrB_2$ 도전성(導電性) 복합체(複合體)의 특성(特性)에 미치는 In Situ YAG의 영향(影響) (Effect of In Situ YAG on Properties of the Pressureless-Sintered SiC-$ZrB_2$ Electroconductive)

  • 신용덕;주진영;고태헌;이정훈
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 제39회 하계학술대회
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    • pp.1230-1231
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    • 2008
  • The effect of content of $Al_2O_3+Y_2O_3$ sintering additives on the densification behavior, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at 1,700[$^{\circ}C$] temperatures with an addition of $Al_2O_3+Y_2O_3$(6:4 mixture of $Al_2O_3$ and $Y_2O_3$) as a sintering aid in the range of 8${\sim}$20[wt%]. Phase analysis of $SiC-ZrB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $ZrB_2$ and In Situ YAG($Al_5Y_3O_{12}$). The relative density, flexural strength, Young's modulus and vicker's hardness showed the highest value of 89.01[%], 81.58[Mpa], 31.437[GPa] and 1.34[GPa] for $SiC-ZrB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature respectively. Abnormal grain growth takes place during phase transformation from ${\beta}$-SiC into ${\alpha}$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites. In this paper, it is convinced that ${\beta}$-SiC based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

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DED 공정으로 제조된 Al-B4C 복합재의 미세조직 및 기계적 특성 (Microstructures and Mechanical Properties of Al-B4C Composites Fabricated by DED Process)

  • 안유정;한주연;최현주;신세은
    • 한국분말재료학회지
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    • 제30권3호
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    • pp.262-267
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    • 2023
  • Boron carbide (B4C) is highly significant in the production of lightweight protective materials when added to aluminum owing to its exceptional mechanical properties. In this study, a method for fabricating Al-B4C composites using high-energy ball milling and directed energy deposition (DED) is presented. Al-4 wt.% B4C composites were fabricated under 21 different laser conditions to analyze the microstructure and mechanical properties at different values of laser power and scan speeds. The composites fabricated at a laser power of 600 W and the same scan speed exhibited the highest hardness and generated the fewest pores. In contrast, the composites fabricated at a laser power of 1000 W exhibited the lowest hardness and generated a significant number of large pores. This can be explained by the influence of the microstructure on the energy density at different values of laser power.

Al-B-C 첨가 탄화규소의 스파크 플라즈마 소결에 의한 미세구조 발달 (Microstructure Development of Spark Plasma Sintered Silicon Carbide with Al-B-C)

  • 조경식;이광순;이현권;이상진;최헌진
    • 한국세라믹학회지
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    • 제42권8호
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    • pp.567-574
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    • 2005
  • Densification of SiC powder with additives of total amount of2, 4, 8 $wt\%$ Al-B-C was carried out by Spark Plasma Sintering (SPS). The unique features of the process are the possibilities of a very fast heating rate and a short holding time to obtain fully dense materials. The heating rate and applied pressure were kept at $100^{\circ}C/min$ and 40 MPa, while the sintering temperature and holding time varied from 1700 - $1800^{\circ}C$ for 10 - 40 min, respectively. The SPS-sintered specimens with different amount of Al-B-C at $1800^{\circ}C$ reached near-theoretical density. The $3C{\rightarrow}6H,\;15R{\rightarrow}4H$ phase transformation of SiC was enhanced by increasing the additive amount. The microstructure of SiC sintered up to $1750^{\circ}C$ consisted of fine equiaxed grains. In contrast, the growth of large elongated grains in small matrix grains was shown in sintered bodies at $1800^{\circ}C$, and the plate-like grains interlocking microstructure had been developed by increasing the holding time at $1800^{\circ}C$. The grain growth rate decreases with increasing amount of Al-B-C in SiC starting powder, however, the both of volume fraction and aspect ratio of large grains in sintered body increased.

무가압 어닐드한 Sic-$TiB_2$ 전도성 복합체의 특성에 미치는 In Situ YAG의 영향 (Effects of In Situ YAG on Properties of the Pressurless Annealed Sic-$TiB_2$ Electroconductive Ceramic Composites)

  • 신용덕;주진영;고태헌
    • 전기학회논문지
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    • 제57권5호
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    • pp.808-815
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    • 2008
  • The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 8, 12, 16[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressureless annealing at 1650[$^{\circ}C$] for 4 hours. The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), ${\beta}$-SiC(3C), $TiB_2$, and In Situ YAG($Al_2Y_3O_{12}$). The relative density of SiC-$TiB_2$ composites was lowered due to gaseous products of the result of reaction between SiC and $Al_2O_3+Y_2O_3$. There is another reason which pressureless annealed temperature 1650[$^{\circ}C$] is lower $300{\sim}450[^{\circ}C]$ than applied pressure sintering temperature $1950{\sim}2100[^{\circ}C]$. The relative density, the flexural strength, the Young's modulus and the Vicker's hardness showed the highest value of 82.29[%], 189.5[Mpa], 54.60[Gpa] and 2.84[Gpa] for SiC-$TiB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature. Abnormal grain growth takes place during phase transformation from ${\beta}$-SiC into ${\alpha}$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of 0.0117[${\Omega}{\cdot}cm$] for 16[wt%] $Al_2O_3+Y_2O_3$ additives at 25[$^{\circ}C$]. The electrical resistivity was all negative temperature coefficient resistance (NTCR) in the temperature ranges from $25^{\circ}C$ to 700[$^{\circ}C$]. The resistance temperature coefficient of composite showed the lowest value of $-2.3{\times}10^{-3}[^{\circ}C]^{-1}$ for 16[wt%] additives in the temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$].

상압소결(常壓燒結)한 SiC-$ZrB_2$ 전도성(電導性) 복합체(複合體)의 특성(特性)에 미치는 In Situ YAG의 영향(影響) (Effect of In Situ YAG on Properties of the Pressureless-Sintered SiC-$ZrB_2$ Electroconductive Ceramic Composites)

  • 신용덕;주진영;고태헌;이정훈
    • 전기학회논문지
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    • 제57권11호
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    • pp.2015-2022
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    • 2008
  • The effect of content of $Al_2O_3+Y_2O_3$ sintering additives on the densification behavior, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressurless-sintered for 2 hours at 1,700[$^{\circ}C$] temperatures with an addition of $Al_2O_3+Y_2O_3$(6 : 4 mixture of $Al_2O_3$ and $Y_2O_3$) as a sintering aid in the range of $8\;{\sim}\;20$[wt%]. Phase analysis of $SiC-ZrB_2$ composites by XRD revealed mostly of $\alpha$-SiC(6H), $ZrB_2$ and In Situ YAG($Al_5Y_3O_{12}$). The relative density, flexural strength, Young's modulus and vicker's hardness showed the highest value of 89.02[%], 81.58[MPa], 31.44[GPa] and 1.34[GPa] for $SiC-ZrB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature respectively. Abnormal grain growth takes place during phase transformation from $\beta$-SiC into $\alpha$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of $3.l4{\times}10^{-2}{\Omega}{\cdot}cm$ for $SiC-ZrB_2$ composite added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at 700[$^{\circ}C$]. The electrical resistivity of the $SiC-TiB_2$ and $SiC-ZrB_2$ composite was all negative temperature coefficient resistance (NTCR) in the temperature ranges from room temperature to 700[$^{\circ}C$]. Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites.

Al-B-C 조제 β-SiC의 스파크 플라즈마 소결에 미치는 α-SiC seed 첨가 영향: 미세 구조 변화 (Influence of α-SiC Seed Addition on Spark Plasma Sintering of β-SiC with Al-B-C: Microstructural Development)

  • 조경식;이현권;이상우
    • 한국분말재료학회지
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    • 제17권1호
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    • pp.13-22
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    • 2010
  • The unique features of spark plasma sintering process are the possibilities of a very fast heating rate and a short holding time to obtain fully dense materials. $\beta$-SiC powder with 0, 2, 6, 10 wt% of $\alpha$-SiC particles (seeds) and 4 wt% of Al-B-C (sintering aids) were spark plasma sintered at $1700-1850^{\circ}C$ for 10 min. The heating rate, applied pressure and sintering atmosphere were kept at $100^{\circ}C/min$, 40 MPa and a flowing Ar gas (500 CC/min). Microstructural development of SiC as function of seed content and temperature during spark plasma sintering was investigated quantitatively and statistically using image analysis. Quantitative image analyses on the sintered SiC ceramics were conducted on the grain size, aspect ratio and grain size distribution of SiC. The microstructure of SiC sintered up to $1700^{\circ}C$ consisted of equiaxed grains. In contrast, the growth of large elongated SiC grains in small matrix grains was shown in sintered bodies at $1750^{\circ}C$ and the plate-like grains interlocking microstructure had been developed by increasing sintering temperature. The introduction of $\alpha$-SiC seeds into $\beta$-SiC accelerated the grain growth of elongated grains during sintering, resulting in the plate-like grains interlocking microstructure. In the $\alpha$-SiC seeds added in $\beta$-SiC, the rate of grain growth decreased with $\alpha$-SiC seed content, however, bulk density and aspect ratio of grains in sintered body increased.

무가압 Annealing한 $SiC-TiB_2$전도성 세라믹 복합체의 특성 (Properties of SiC-Ti $B_2$ Electroconductive Ceramic Composites by Pressureless Annealing)

  • 신용덕;주진영;최광수;오상수;윤양웅
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제52권2호
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    • pp.80-84
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    • 2003
  • The mechanical and electrical properties of the hot-pressed and pressureless annealed SiC-Ti $B_2$electroconductive ceramic composites were investigated as functions of the liquid additives of $Al_2$ $O_3$+ $Y_2$ $O_3$. The result of phase analysis for the SiC-Ti $B_2$ composites by XRD revealed $\alpha$-SiC(6H), Ti $B_2$, and YAG(A $l_{5}$ $Y_3$ $O_{12}$ ) crystal phase. The relative density of SiC-Ti $B_2$ composites was increased with increased $Al_2$ $O_3$+ $Y_2$ $O_3$ contents. The fracture toughness showed the highest value of 6.04 Mpa $m^{\frac{1}{2}}$ for composites added with l2wt% A1$_2$ $O_3$+ $Y_2$ $O_3$ additives at room temperature. The electrical resistivity showed the lowest value of 6.2$\times$10$^{-3}$ $\Omega$ㆍcm for composite added with l6wt% $Al_2$ $O_3$+ $Y_2$ $O_3$ additives at room temperature. The electrical resistivity of the SiC-Ti $B_2$ composites was all positive temperature cofficient resistance(PTCR) in the temperature ranges from $25^{\circ}C$ to $700^{\circ}C$.

P123-Templated Co3O4/Al2O3 Mesoporous Mixed Oxides for Epoxidation of Styrene

  • Jung, Mie-Won;Kim, Young-Sil
    • 한국재료학회지
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    • 제22권6호
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    • pp.316-320
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    • 2012
  • $Co_3O_4$, $Al_2O_3$ and $Co_3O_4$/$Al_2O_3$ mesoporous powders were prepared by a sol-gel method with starting matierals of aluminum isopropoxide and cobalt (II) nitrate. A P123 template is employed as an active organic additive for improving the specific surface area of the mixed oxide by forming surfactant micelles. A transition metal cobalt oxide supported on alumina with and without P123 was tested to find the most active and selective conditions as a heterogeneous catalyst in the reaction of styrene epoxidation. A bBlock copolymer-P123 template was added to the staring materials to control physical and chemical properties. The properties of $Co_3O_4$/$Al_2O_3$ powder with and without P123 were characterized using an X-ray diffractometer (XRD), a Field-Emission Scanning Electron Microscope (FE-SEM), a Bruner-Emmertt-Teller (BET) surface analyzer, and $^{27}Al$ MAS NMR spectroscopy. Powders with and without P123 were compared in catalytic tests. The catalytic activity and selectivity were monitored by GC/MS, $^1H$, and $^{13}C$-NMR spectroscopy. The performance for the reaction of epoxidation of styrene was observed to be in the following order: [$Co_3O_4$/$Al_2O_3$ with P123-1173 K > $Co_3O_4$/$Al_2O_3$ with P123-973 K > $Co_3O_4$-973 K>$Co_3O_4$/$Al_2O_3$-973 K > $Co_3O_4$/$Al_2O_3$ with P123-1473 K > $Al_2O_3$-973 K]. The existence of ${\gamma}$-alumina and the nature of the surface morphology are related to catalytic activity.