• Journal of Korean Vacuum Science & Technology
• /
• v.2 no.2
• /
• pp.78-84
• /
• 1998

ZnO:Al films were prepared by an rf magnetron sputtering and targets for the experiments were fabricated by sintering the mixture of ZnO and Al2O3. The most conductive film was obtained from the target with 2.0∼2.2 wt.% of Al2O3. Optical properties studied with spectroscopic ellipsometry showed band gap widening, i.e., the Burstein-Moss shift, with aluminum doping as well as with the elevation of deposition temperature. And it is found that the optical and electrical properties were related to the density of states as well as the variation of donor level. when hydrogen atoms were introduced into the films, the activation energy for the generation of oxygen vacancy was smaller for the films showing higher conductivity. This indicates that the optimum deposition condition for highly conductive ZnO:Al film has strong relation to the optimum doping condition.

• Journal of the Korean Ceramic Society
• /
• v.48 no.4
• /
• pp.328-333
• /
• 2011

The influence of Al-doped ZnO (AZO) thin films degraded under high temperature and damp heat on the performance deterioration of Cu(In,Ga)$Se_2$ (CIGS) solar cells was investigated. CIGS solar cells with AZO/CdS/CIGS/Mo structure were prepared on glass substrate and exposed to high temperature ($85^{\circ}C$) and damp heat ($85^{\circ}C$/85% RH) for 1000 h. As-prepared CIGS solar cells had 64.91% in fill factor (FF) and 12.04% in conversion efficiency. After exposed to high temperature, CIGS solar cell had 59.14% in FF and 9.78% in efficiency, while after exposed to damp heat, it had 54.00% in FF and 8.78% in efficiency. AZO thin films in the deteriorated CIGS solar cells showed increases in resistivity up to 3.1 times and 4.4 times compared to their initial resistivity after 1000 h of high temperature and damp heat exposure, respectively. These results can be explained by the decreases in carrier concentration and mobility due to diffusion or adsorption of oxygen and moisture in AZO thin films. It can be inferred that decreases in FF and conversion efficiency were caused by an increase in series resistance, which resulted from an increase in resistivity of AZO thin films degraded under high temperature and damp heat.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.23 no.1
• /
• pp.78-84
• /
• 2009

In this paper, ZnO:Al thin film was deposited on polyethylene terephthalate(PET) substrate by capacitively coupled r. f. magnetron sputtering method from a ZnO target mixed with 2wt[%] Al2O3 to investigate the possible application of ZnO:Al film as a transparent conducting electrode for film typed DSCs. The effect of substrate bias on the electrical properties and film structure were studied. The results showed that a positive bias applied to the substrate during sputtering contributed to an improvement of electrical properties of the film by attracting electrons in the plasma to bombard the growing films. These bombardments provided additional energy to the growing ZnO:Al film on the substrate, resulting in significant variations in film structure and electrical properties. Electrical resistivity of the film decreases significantly as the positive bias increases up to +30[V] However, as the positive bias increases over +30[V], the resistivity decreases. The transmittance varies little as the substrate bias is increased from 0 to +60[V], and as r. f. powers increases from 160[W] to 240[W]. The film with electrical resistivity as low as $1.8{\times}10^{-3}[{\Omega}-cm]$ and optical transmittance of about 87.8[%] were obtained for 1,012[nm] thick film deposited with a substrate bias of +30[V].

• Proceedings of the Korean Magnestics Society Conference
• /
• 2013.05a
• /
• pp.78-78
• /
• 2013

• Journal of the Semiconductor & Display Technology
• /
• v.9 no.3
• /
• pp.75-78
• /
• 2010

In this study we investigated the electrical properties of ZnO-based MOS capacitor with $HfO_2$ as the gate dielectric. MIM capacitor, which uses either $HfO_2$ or $Al_2O_3$ as the dielectric layer, is also studied to understand the dependency of the dielectrics on the preparation conditions. It was found that thinner $HfO_2$ films yield better electrical properties, namely lower leakage current and higher breakdown electric field. These properties were observed to deteriorate when subsequently annealed. Capacitance in the depletion region of MOS capacitor was found to increase with UV ozone treatment time up to 60min. However, when the treatment time was extended to 120min, the trend is reversed. The 'threshold voltage' was also observed to positively shift with UV ozone treatment time up to 60min. The shift apparently saturated for longer treatment.

• Korean Journal of Materials Research
• /
• v.11 no.10
• /
• pp.889-894
• /
• 2001

2wt% $Al_2O_3-doped$ ZnO (AZO) thin films were deposited on sapphire (0001) single crystal substrate by parellel type rf magnetron sputtering at 55$0^{\circ}C$. The as-grown AZO thin films was polycrystalline and showed only broad deep defect-level photoluminescence (PL). In order to examine the change of PL property, AZO thin films were annealed in $N_2$ (N-AZO) and $H_2$ (H-AZO) at the temperature of $600^{\circ}C$~$1000^{\circ}C$ through rapid thermal annealing. After annealed at $800^{\circ}C$, N-AZO shows near band edge emission (NBE) with very small deep-level emission, and then N-AZO annealed at $900^{\circ}C$ shows only sharp NBE with 219 meV FWHM. In Comparison with N-AZO, H-AZO exhibits very interesting PL features. After $600^{\circ}C$ annealing, deep defect-level emission was quire quenched and NBE around 382 nm (3.2 eV) was observed, which can be explained by the $H_2$passivation effect. At elevated temperature, two interesting peaks corresponding to violet (406 nm, 3.05 eV) and blue (436 nm, 2.84 eV) emission was firstly observed in AZO thin films. Moreover, peculiar PL peak around 694 nm (1.78 eV) is also firstly observed in all the H-AZO thin films and this is believed good evidence of hydrogenation of AZO. Based on defect-level scheme calculated by using the full potential linear muffin-tin orbital (FP-LMTO), the emission 3.2 eV, 3.05 eV, 3.84 eV and 1.78 eV of H-AZO are substantially deginated as exciton emission, transition from conduction band maximum to $V_{ Zn},$ from $Zn_i$, to valence band maximum $(V_{BM})$ and from $V_{o} to V_BM}$, respectively.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.6
• /
• pp.321-323
• /
• 2013

100 nm thick Ga doped ZnO (GZO) thin films were deposited with DC and RF magnetron sputtering at room temperature on glass substrate and Al coated glass substrate, respectively. and the effect of the Al underlayer on the optical and electrical properties of the GZO films was investigated. As-deposited GZO single layer films had an optical transmittance of 80% in the visible wavelength region, and sheet resistance of 1,516 ${\Omega}/{\Box}$, while the optical and electrical properties of GZO/Al bi-layered films were influenced by the thickness of the Al buffer layer. GZO films with 2 nm thick Al film show a lower sheet resistance of 990 ${\Omega}/{\Box}$, and an optical transmittance of 78%. Based on the figure of merit (FOM), it can be concluded that the thin Al buffer layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

• Journal of Korean Society of Environmental Engineers
• /
• v.33 no.2
• /
• pp.93-102
• /
• 2011

In this study, experiments on total digestion and sequential extraction were conducted in order to understand total metal contents, and mobility, bioavaliability and toxicity of metals in marine dredged sediment from Busan New Port. The total concentrations of arsenic and heavy metals in the dredged sediment were relatively low as follows: Al (2.36~2.96 wt.%), As (1.6~3.3 mg/kg), Ba (30.0~33.8 mg/kg), Cd (0.12~0.18 mg/kg), Cr (27.5~35.0 mg/kg), Cu (11.3~15.0 mg/kg), Fe (2.91~3.51 wt.%), Mn (324~408 mg/kg), Ni (18.8~23.8 mg/kg), Pb (23.8~31.3 mg/kg), and Zn (70.0~86.3 mg/kg). In addition, it was found that most of Al (87.5~95.9%), As (74.1~93.8%), Ba (71.8~77.6%), Cr (69.5~94.3%), Cu (50.0~78.7%), Fe (70.8~87.6%), Ni (64.5~75.3%), Pb (53.4~64.3%), and Zn (62.5~81.7%) existed in the residual fraction, meaning that those elements might come from natural sources. On the other hand, Cd and Mn were present mainly in the non-residual fraction. Due to low concentrations of toxic heavy metals and high percentage of residual fraction, it could be possible to reuse the dredged sediment for bricks, pavement base material, etc.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.78-79
• /
• 2009

본 연구에서는 ZnO계 투명전극 소재를 이용하여 RFID 태그 안테나에 적용 가능성 여부를 확인하였다. Si 기판위에 RF 스퍼터링 공정에 의해 Ga-doped ZnO 투명 마이크로스트립 스파이혈 안테나를 $2{\mu}m$를 증착하여 구현하고 그 전기적 특성을 측정하였다. HFSS 전자계 시뮬레이터를 사용하여 13.56MHz HF 주파수 대역에서 태그 안테나로서의 가능성을 검증한 후 Ga-doped ZnO 타겟을 사용한 RF 스퍼터링 공정에 의하여 스파이럴 안테나 패턴을 구현하였다. 마이크로스트립 선폭 및 선 간격을 $50\sim200{\mu}m$때 영역에서 조절하면서 안테나 패턴을 설계하였다. S 파라메터, 자기공진주파수 및 Q값을 시뮬레이션으로부터 도출하였다. Al $2{\mu}m$ 증착한 시편에 비하여 약 -10dB 정도의 이득저하가 발생하였으나 리더-태그를 밀착시킨 조건에서 1.7V (13.56MHz) 전압검출이 가능하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2017.05a
• /
• pp.78-78
• /
• 2017

Pure Titanium and alloy have been widely used in dental implants and orthopedics due to their excellent mechanical properties, biocompatibility and corrosion resistance. However, due to the biologically inactive nature of Ti metal implants, it cannot bind to the living bone immediately after transplantation into the body. In order to improve the bone bonding ability of titanium implants, many attempts have been made to alter the structure, composition and chemical properties of titanium surfaces, including the deposition of bioactive coatings. The PEO method has the advantages of short experiment time and low cost. These advantages have attracted attention recently. Recently, many metal ions such as silicon, magnesium, zinc, strontium, and manganese have received attention in this field due to their impact on bone regeneration. Silicon (Si) in particular has been found to be essential for normal bone and cartilage growth and development. Zinc (Zn) plays very important roles in bone formation and immune system regulation and promotes bone metabolism and growth. Manganese (Mn) is an essential trace metal found in all tissues and is required for normal amino acid, lipid, protein and carbohydrate metabolism. The objective of this work was research on the corrosion behavior of Si, Zn and Mn-doped hydroxyapatite on the PEO-treated surface. Anodized alloys was prepared at 270V~300V voltage in the solution containig Zn, Si, and Mn ions. Ion release test was carried out using potentidynamic and AC impedance method in 0.9% NaCl solution. The surface characteristics of PEO treated Ti-6Al-4V alloy were investigated using XRD, FE-SEM, AFM and EDS.