• Journal of Korea Foundry Society
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• v.33 no.6
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• pp.233-241
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• 2013

Effect of Fe and Mn contents on the castability of Al-9wt%Si-xMg-yFe-zMn alloy has been studied. The alloy was composed of ${\alpha}$-Al phase, Al+eutectic Si phase, ${\beta}$-Al5FeSi compound and chinese script ${\alpha}$-$Al_{15}(Mn,Fe)_3Si_2$ compound. ${\beta}$-$Al_5FeSi$ and ${\alpha}$-$Al_{15}(Mn,Fe)_3Si_2$ compounds assumed to effect the fluidity and shrinkage behaviors of the alloy during solidification due to the crystallization of ${\alpha}$-$Al_{15}(Fe,Mn)_3Si_2$ and ${\beta}$-$Al_5FeSi$ compounds above eutectic temperature. As Fe and Mn contents of Al-9wt%Si-0.3wt%Mg system alloy increased from 0.15wt% to 0.6wt% and from 0.3wt% to 0.7wt%, fluidity of the alloy decreased by 5.7% and 3.3%, respectively. And as Mg content of Al-9wt%Si-0.45wt%Fe-0.5wt%Mn system alloy increased from 0.3wt% to 0.4wt%, fluidity of the alloy decreased by 8.6%. When Fe content of the alloy increased from 0.15wt% to 0.6wt%, macro shrinkage ratio decreased from 6.1% to 4.1%, and micro shrinkage ratio increased from 0.04% to 0.24%. Similarly, Mn content of the alloy increased from 0.3wt% to 0.7wt%, macro shrinkage ratio decreased from 6.0% to 4.5% and micro shrinkage ratio increased from 0.12% to 0.18%. Judging from the castability of the alloy, Al-9wt%Si-0.3wt%Mg alloy with low content of Fe and Mn, 0.1wt% Fe and 0.3wt% Mn, is recommendable.

• Journal of the Korean Vacuum Society
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• v.1 no.3
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• pp.382-388
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• 1992

Electromigration은 인가된 전계하에서 발생하는 전자풍력에 의한 금속 이온의 현 상이며, 반도체 디바이스의 주요 결함 원인으로 보고되어 왔다. 선폭 1$mu extrm{m}$의 Al-1%Si 금속 박막전도체에 대한 electromigration 수명 실험을 위해 인가된 d.c. 전류밀도는 10MA/cm2 이었고, electromigration에 대한 활성화 에너지 측정을 위한 분위기 온도는 $80^{\circ}C$, 10$0^{\circ}C$ 그리고 $120^{\circ}C$이었다. 평균수명 및 신뢰성에 대한 보호 절연막 효과를 위해 두께 3000 $\AA$의 SiO2 산화막을 sputtering 진공증착기를 사용하여 Al-1%Si 금속 박막 전도체 위에 증착하였 다. 주요 연구 결과는 다음과 같다. Al-1%Si 금속 박막 전도체의 electromigration에 대한 활성화 에너지값은 0.75eV이었고 온도가 증가함에 따라 Al-1%Si의 수명은 감소하였고 신 뢰성은 향상되었다. SiO2 보호막은 electromigration에 대한 저항성을 크게 함으로써 평균수 명을 향상시켰으며, electromigration failure는 lognormal failure distribution은 갖는 것으로 나타났다.

• Bulletin of the Korean Chemical Society
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• v.28 no.4
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• pp.647-651
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• 2007

In order to investigate the excited-state intramolecular proton transfer (ESIPT) process of dihydroxyanthraquinones (DHAQ; 1,5-DHAQ and 1,8-DHAQ) in organic-inorganic hybrid matrices, transparent SiO2, SiO2- Al2O3, and Al2O3 matrices chemically bonded with DHAQ were prepared using a sol-gel technique. The absorption maxima of 1,5- and 1,8-DHAQ in SiO2 matrices are observed at around 420 nm, whereas those of DHAQ in both SiO2-Al2O3 and Al2O3 matrices are markedly shifted to longer wavelength compared with those in SiO2 matrix. This indicates that DAHQ forms a chemical bond with an Al atom of Al2O3. The DHAQ in SiO2 matrix shows a markedly Stokes-shifted emission which is originated from the ESIPT in DHAQ. Based on the emission lifetimes of DHAQ, the ESIPT of DHAQ was found to be strongly affected by the chemical interaction with Al atom in the Al2O3-related matrices.

• Journal of the Korean Ceramic Society
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• v.30 no.2
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• pp.123-130
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• 1993

Dispersed type Al2O3-SiC composite powders were synthesized from Al-isopropoxide (Al(i-OC3H7)3) and Si(OC2H5)4 precursors by hydrolysis of mixed alkoxides and carbothermal reaction method. The characteristics of the synthesized (dispersed type) Al2O3-SiC composite powders were investigated using XRD, SEM, TEM, BET and particle size analyzer. Carbothermal reaction to produce Al2O3-SiC composite was completed in 10h at 135$0^{\circ}C$ on 3~4㎤/s (0.21~0.28cm/s) of H2 flow rate and about 1/1 of carbon/oxides(=SiO2＋Al2O3) molar ratio. The synthesized powders were observed to have the mean particle size range of 0.4~1.26${\mu}{\textrm}{m}$ and showed finer particle size with increasing SiC content.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.590-598
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• 2001

SiCp/pure Al and SiCp/2024Al MMCs were fabricated by in-situ VHP process designed specially just in this study which is composed of the vacuum hot press at range from R.T. to $500^{\circ}C$ and the continuous extrusion without canning process at $520^{\circ}C$. It was investigated the effect of SiC particle size, volume fraction and extrusion ratio on the tensile properties and micro structure in auf composites. In case of the 10:1 extrusion ratio, but SiCp/pure Al and SiCp/2024Al composites were shown a sound appearance and a good micro structure without crack of SiCp as well as uniform distribution of SiCp. However, in case of the 16:1 extrusion ratio, the number of cracked SiC particles more than increased in a higher volume fraction composite and 2024Al matrix composite compared with pure Al matrix one. The tensile strength of the composites reinforced smaller SiCp was higher than that of the bigger SiCp reinforced in same volume fraction and extrusion ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.235-235
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• 2009

This paper describes the influence of a polycrystalline (poly) 3C-SiC buffer layer on the surface acoustic wave (SAW) properties of poly aluminum nitride (AlN) thin films by comparing the center frequency, insertion loss, the electromechanical coupling coefficient ($k^2$), andthetemperaturecoefficientoffrequency(TCF) of an IDT/AlN/3C-SiC structure with those of an IDT/AlN/Si structure, The poly-AlN thin films with an (0002)-preferred orientation were deposited on a silicon (Si) substrate using a pulsed reactive magnetron sputtering system. Results show that the insertion loss (21.92 dB) and TCF (-18 ppm/$^{\circ}C$) of the IDT/AlN/3C-SiC structure were improved by a closely matched coefficient of thermal expansion (CTE) and small lattice mismatch (1 %) between the AlN and 3C-SiC. However, a drawback is that the $k^2(0.79%)$ and SAW velocity(5020m/s) of the AlN/3C-SiC SAW device were reduced by appearing in some non-(0002)AlN planes such as the (10 $\bar{1}$ 2) and (10 $\bar{1}$ 3) AlN planes in the AlN/SiC film. Although disadvantages were shown to exist, the use of the AlN/3C-SiC structure for SAW applications at high temperatures is possible. The characteristics of the AlN thin films were also evaluated using FT-IR spectra, XRD, and AFM images.

• Current Photovoltaic Research
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• v.1 no.2
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• pp.103-108
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• 2013

Epitaxial growth of a high-quality thin Si film is essential for the application to low-cost thin-film Si solar cells. A polycrystalline Si film was grown on a $SiO_2$ substrate at $450^{\circ}C$ by a Al-assisted crystal growth process. For the purpose, a thin Al layer was deposited on the $SiO_2$ substrate for Al-assisted crystal growth. However, the epitaxial growth of Si film resulted in a rough surface with humps. Then, we introduced a thin amorphous Si seed layer on the Al film to minimize the initial roughness of Si film. With the help of the Si seed layer, the surface of the epitaxial Si film was smooth and the crystallinity of the Si film was much improved. The grain size of the $1.5-{\mu}m$-thick Si film was as large as 1 mm. The Al content in the Si film was 3.7% and the hole concentration was estimated to be $3{\times}10^{17}/cm^3$, which was one order of magnitude higher than desirable value for Si base layer. The results suggest that Al-doped Si layer could be use as a seed layer for additional epitaxial growth of intrinsic or boron-doped Si layer because the Al-doped Si layer has large grains.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.626-631
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• 1997

AlSiCa powders were prepared from the domestic Hadong Kaolin ($Al_2O_3{\cdot}2SiO_2{\cdot}2H_2O$). As a result of the reaction of Hadong Kaolin and carbon powder at reducing atmosphere, $Al_2O_3{\cdot}SiC$ composite started to form at $1300^{\circ}C$ and completed at $1400^{\circ}C$. The optimum amount of carbon was 1:4 in mole ratio. It was found that only bright-green $\beta-SiC$ phase forms when the mixture was packed without carbon powder in alumina crucible.

• Journal of the Korean institute of surface engineering
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• v.34 no.2
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• pp.135-141
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• 2001

Arc-melted Ti-6Al-4V, Ti-4Fe and Ti-(1,2) Si alloys were oxidized at 700, 800, 900 and $1000^{\circ}C$ in air. The oxidation resistance of Ti-4Fe was comparable to that of Ti-6Al-4V, while the oxidation resistance of Ti-(1,2) Si was superior to that of Ti-6Al-4V. Ti-2Si displayed the best oxidation resistance among the four alloys, but failed after oxidation at $1000^{\circ}C$ for 17h. The oxide scale formed on Ti-6Al-4V, Ti-4Fe and Ti-(1,2)Si consisted of ($TiO_2$ and a small amount of $Al_2$$O_3$), ($TiO_2$ and a small amount of dissolved iron), and ($TiO_2$ plus a small concentration of amorphous $SiO_2$), respectively. The oxide grains of the surface scale of the four alloys were generally fine and round.

• Journal of the Korean institute of surface engineering
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• v.12 no.2
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• pp.75-83
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• 1979

The Rates of formation and heats of activation for the intermatallic Compound Layers between Cold rolled sheet and molten aluminium &ath (adding small amounts of silicon) has been determined by Continous aluminizing method in the temperature range of 680$^{\circ}$ to 760$^{\circ}C$ and with immerssion time. The structure of the intermetallic Compound Layers was the shape of "Tongues" in pure Al-Bath and Al-Bath Containing 1% Si, But in Al-5% Si Bath was "Band" the Composition of the intermetallic Compound Layers were checked by microhardness measurements and X-Ray probe micro analyzer. FeAl intermetallic Compound layer was found to be uniform in pure Al-Bath and Al-5% Si Bath, But Fe Al intermetallic Compound Layer was shown in Al-1% Si Bath. The growth Rates of the intermetallic Compound Layers was most rapidly increased at Temperatures from 720$^{\circ}$ to 760$^{\circ}C$, at the immorsion time above 60 Second in pure Al-Bath, But in Al-1% Si Bath was solwly increased for the same conditions, and then in Al-5% Si Bath was hardly effected by these experimental condition. Heasts of activation of 29, 46 Kcal per mole which calculuted from Layer growth experiments were found in pure Al-Bath, Al-1% Si Bath respectively.