• Journal of Korea Foundry Society
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• v.29 no.2
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• pp.64-69
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• 2009

In the present study the effect of cooling rate during solidification on the microstructural characteristics of Al-xAg (x = 31, 33, 35 at.%) in-situ binary eutectic composites has been investigated. To provide a wide range of cooling rate three different casting techniques, i.e. conventional casting, injection casting, and melt spinning have been used. The observed microstructure is very much dependent on the cooling rate. The fcc ${\alpha}$-Al and hcp $Ag_2Al$ phases exhibits an orientation of (111)Al//(0001)$Ag_2Al$, [1-10]Al//[11- 20]$Ag_2Al$. The microstructure of the melt-spun samples contains Widmanstatten structure resulting from solid-state transformation and nano scale two-phase structure resulting from solid-state phase separation. The microstructure of injection-cast samples contains eutectic structure and solid state phase-separated structure. On the other hand, conventional-cast samples exhibit a microstructure consisted of plate-type eutectic structure.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.12
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• pp.8679-8683
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• 2015

Using a surface modification technique, ion beam assisted deposition (IBAD) of Ti thin film it becomes possible to prepare an active ceramic surface to braze $Al_2O_3$-STS304 with conventional Ag-Cu eutectic composition filler metal. Researches on bonding formations at interfaces of ceramic joints were mainly related on the development of filler metals to ceramic, the process parameters, and clarifications of reaction products. From the results, the reactive brazing is a very convenient technique compared to the conventional Mn-Mo method. However melting point of reactive filler is still higher than that of Ag-Cu eutectic and it forms the brittle inter metallic compound. Recently several new approaches are introduced to overcome the main shortcomings of the reactive metal brazing in ceramic-metal, metal vapor vacuum arc ion source was introduced to implant the reactive element directly into the ceramics surface, and sputter deposition with sputter etching for the deposition of active material.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.269-277
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• 1998

The crystallization method determines the material quality and consequent device performance. This paper investigates the crystallization of a-Si:H films on various substrate materials and analyzes the crystallization effect with and without using eutectic forming metals. From the examinations of the various substrate materials, a metal Mo was selected for the a-Si:H films growth and subsequent crystallization of it. For a sample without any eutectic metal layer, we observed grain size of $0.8{\mu}m$ after $1100^{\circ}C$ anneal treatment. To reduce crystallization temperature, we used some of the eutectic forming metals such as Au, Al and Ag. Poly-Si films with grain size over $10{\mu}m$ and (111) preferential plains were achieved using a premetal layer of Au at an anneal temperature of $700^{\circ}C$. The various crystallization effects of eutectic metal thickness and type were investigated for photovoltaic (PV) device applications.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.2
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• pp.17-27
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• 2011

This paper describes an experimental study and finite element analysis (FEA) carried out for investigating thermal deformation behavior of solders, resulting from temperature change in the solder. With such a goal in mind, a shear specimen that was composed of two metal bars having different coefficient of thermal expansion and solder blocks placed between two bars was designed and fabricated. Two different types of solder blocks, eutectic solder (Sn/36Pb/ 2Ag) and lead-free solder (Sn/3.0Ag/0.5Cu) were tested as well. Fringe patterns for several temperature steps were recorded and analyzed for three temperature cycles using a real-time moir$\acute{e}$ setup. The experimental data was verified with FEA and used to evaluate the suitability for numerous solder constitutive models available in literatures. FEA employing Anand material model suggested by Darveaux et al. and Chang et al. were found to be in an excellent agreement with the experimental results for the eutectic solder and the lead-free solder, respectively. In addition, numerical predictions on bending displacement, shear strain and viscoplastic distortion energy are documented and viscoplastic deformation behavior of two types of solder material are compared.

• Journal of the Korean Ceramic Society
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• v.33 no.12
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• pp.1421-1425
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• 1996

Sintered Si3N4 and Inconel composed of Ni(58-63%) Cr(21-25%) Al(1-17%) Mn(<1%) fe(balance) were pressurelessly joined by using Ag-Cu-Ti brazing filler metal at 950℃ and 1200℃ under N2 gas atmosphere of 1atm and their interfacial structures were investigated. In case that the reaction temperature was low as 950℃ its interfacial structure was "Inconel metal/Ti-rich phase layer/brazing filler metal layer/Si3N4 " Ti used as reactive metal existed in between inconel steel and brazing metal and moved to the interface of between brazing filler metal nd Si3N4 according as reaction temperature increased up to 1200℃. The interfacial structure of inconel steel-Si3N4 reacted at 1200℃ was ' inconel metal/Ni-rich phase layer containing of Fe. Cr and Si/Cu-rich phase layer containing of Mn and Si/Si3N4 " Cr Mn, Ni and Fe diffused to the interface of between brazing filler metal and Si3N4 and reacted with Si3N4 The most reactive components of ingredients of inconel metal were Cr and Mn. On the other hand Ti added as reactive components to Ag-Cu eutectic segregated into Ni-rich phase layer,.