• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.106-106
• /
• 2009

Al-doped ZnO (AZO) thin films were grown on glass substrates by co-sputtering at room temperature. We made ZnO and Al target and ZnO:Al film is deposited with sputter which has two RF gun source. The Al content was controlled by varying Al RF power and effect of Al contents on the properties of ZnO:Al film was investigated. Crystallinity and orientation of the ZnO:Al films were investigated by X-ray diffraction (XRD), surface morphology of the ZnO:Al films was observed by atomic force microscope. Electrical properties of the ZnO:Al films were measured at room temperature by van der Pauw method and hall measurement. Optrical properties of ZnO:Al films were measured by UV-vis-NIR spectrometer.

• The Journal of the Acoustical Society of Korea
• /
• v.22 no.1E
• /
• pp.19-25
• /
• 2003

Ryu et al. recently proposed a multiple target angle-tracking algorithm without a data association problem. This algorithm, however, shows the degraded performance on evasive maneuvering targets, because the estimated signal subspace is d,:graded in the algorithm. In this Paper, we proposed a new algorithm, in which VFF-PASTd (Variable Forgetting Factor PASTd) algorithm is applied to Ryu's algorithm to effectively handle the evasive target tracking with better time-varying signal subspace.

• 제어로봇시스템학회:학술대회논문집
• /
• 1993.10a
• /
• pp.218-223
• /
• 1993

In this paper, we modify a multiple target angle tracking algorithm presented by Sword et al.. The predicted estimates, instead of the existing estimates, of the target angles are updated by the most recent output of the sensor array to improve the tracking performance of the algorithm for crossing targets. Also, the least square solution is modified to avoid abnormally large angle innovations when the target angles are very close. The improved performance of the proposed algorithm is demonstrated by computer simulations.

• Proceedings of the KIEE Conference
• /
• 2001.11a
• /
• pp.171-173
• /
• 2001

ZnO:Al transparent conductive thin films were prepared by facing targets sputtering system with a DC power supply using ZnO target containing 2wt% of $Al_2O_3$ and Zn metal target. Sputtering was carried out at substrate temperature of R.T. and $200^{\circ}C$ with a DC current of 0.6A, $O_2$ flow rate of $0.1{\sim}0.5$ and thickness $300{\sim}900nm$. ZnO:Al films showed a resistivity as low as $10^{-4}{\Omega}-cm$ and a transmittance above 85 % at wavelength 300 and 800nm.

• Journal of the Korean institute of surface engineering
• /
• v.42 no.3
• /
• pp.122-127
• /
• 2009

Ga/Al doped ZnO (GAZO) thin films were prepared on non-alkali glass substrate by co-sputtering system using two DC cathodes equipped with AZO ($Al_2O_3$:2.0 wt%) target and GZO ($Ga_2O_3$:6.65 wt%) target. This study examined the influence of Al/Ga concentration and substrate temperature on the electrical, structural and optical properties of GAZO films. The lowest resistivity $1.95{\times}10^{-3}{\Omega}cm$ was obtained at room temperature. With increasing substrate temperature, resistivity of GAZO film decreased to a minimum value of $7.47{\times}10^{-4}{\Omega}cm$ at below $300^{\circ}C$. Furthermore, when 0.05% $H_2$ gas was introduced, resistivity of GAZO film decreased to $6.69{\times}10^{-4}{\Omega}cm$. All the films had a preferred orientation along the (002) direction, indicating that the deposited films have hexagonal wurtzite structure formed by the textured growth along the c-axis. The average transmittance of the films was more than 85% in the visible light range.

• Transactions on Electrical and Electronic Materials
• /
• v.12 no.4
• /
• pp.169-173
• /
• 2011

In this study, Al-N codoped p-type zinc oxide (ZnO) thin films were deposited on Si and homo-buffer layer templates in a mixture of $N_2$ and $O_2$ gas with ceramic ZnO:(2 wt% $Al_2O_3$) as a sputtering target using DC- magnetron sputtering. X-ray diffraction spectra of two-theta diffraction showed that all films have a predominant (002) peak of ZnO Wurtzite structure. As the $N_2$ fraction in the mixed $N_2$ and $O_2$ gases increased, field emission secondary electron microscopy revealed that the surface appearance of codoped films on Si varied from smooth to textured structure. The p-type ZnO thin films showed carrier concentration in the range of $1.5{\times}10^{15}-2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2-2.864 ${\Omega}cm$, and mobility in the range of $3.99-31.6\;cm^2V^{-1}s^{-1}$ respectively.

• Journal of Korean Vacuum Science & Technology
• /
• v.2 no.2
• /
• pp.78-84
• /
• 1998

ZnO:Al films were prepared by an rf magnetron sputtering and targets for the experiments were fabricated by sintering the mixture of ZnO and Al2O3. The most conductive film was obtained from the target with 2.0∼2.2 wt.% of Al2O3. Optical properties studied with spectroscopic ellipsometry showed band gap widening, i.e., the Burstein-Moss shift, with aluminum doping as well as with the elevation of deposition temperature. And it is found that the optical and electrical properties were related to the density of states as well as the variation of donor level. when hydrogen atoms were introduced into the films, the activation energy for the generation of oxygen vacancy was smaller for the films showing higher conductivity. This indicates that the optimum deposition condition for highly conductive ZnO:Al film has strong relation to the optimum doping condition.

• Bioinformatics and Biosystems
• /
• v.2 no.1
• /
• pp.24-27
• /
• 2007

Human cell regulatory mechanism is one of suspicious problems among biologists. Here we tried to uncover the human breast cancer cell regulatory mechanism from gene expression data (Marc J. Van de vijver, et. al., 2002) using a module network algorithm which is suggested by Segal, et. al.(2003) Finally, we derived a module network which consists of 50 modules and 10 tree depths. Moreover, to validate this candidate network, we applied a GO enrichment test and known transcription factor-target relationships from Transfac(R) (V. Matys, et. al, 2006) and HPRD database (Peri, S. et al., 2003).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.620-623
• /
• 2004

In this study, the discharge characteristic of FTS (Facing Targets Sputtering) apparatus was investigated using metal target paramagnetic and ceramic targets such as Zn, Al, $ZnO:Al(Al_2O_3)$, ITO. Threshold voltage and stable stage of discharge show different with target species. Compare with commercial sputtering apparatus, the FTS apparatus is a high-speed sputter method that promotes ionization of sputter gas by screw and reciprocate moving high-speed ${\gamma}$electrons which arrays two targets facing each other, inserts plasma arresting magnetic field to the parallel direction of the center axis of both targets, discharged from targets and accelerated at the cathode falling area. Especially, we notice that the FTS method using ceramic target has stable discharge characteristic even by DC power source.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.252-252
• /
• 2010

AIZTO (Al-In-Sn-ZnO) thin film was deposited on glass substrate at room temperature by facing target sputtering (FTS) system. The FTS system was designed to array two targets facing each other. Two different kinds of targets were installed on FTS system. We used the ITO (In2O3 90wt%, SnO2 10wt%) target and the AZO (ZnO 98wt%, Al2O3 2wt%). AIZTO films were deposited in each of the applied power of the targets. The electrical and structural properties of the as-deposited AIZTO thin films were then examined by hall-effect measurement, and by using atomic force microscope (AFM), X-ray diffractometer (XRD), and energy dispersive x-ray spectroscopy (EDX). The optical property was measured by an UV-VIS spectrometer.