• The Journal of the Petrological Society of Korea
• /
• v.9 no.4
• /
• pp.205-210
• /
• 2000

Measurements of phase identification and degree of orientation for fine-grained (about 0.3 mm in diameter) minerals in rock samples performed by micro-area X-ray diffractometer.$Al_{2}SiO_{5}$ polymorphs (andalusite, kyanite and sillimanite) were chosen for the measurements and target minerals were existed on thin sections. Micro-area X-ray diffractometer is composed of 3(${\omega}\;{\chi}\;{\phi}$)-circle oscillating goniometer and position sensitive proportional counter (PSPC). $CuK_{\alpha}$ radiation was used as X-ray source and a pin hole ($50\;\mu\textrm{m}$$ in diameter) collimator was selected to focus radiation X-ray onto the target minerals. Phase identification and diffracted X-ray peak indexing were carried out by 3(${\omega}\;{\chi}\;{\phi}$)-circle oscillation measurement. Then, 2(${\omega}\;{\phi}$)-circle oscillation measurement was made for the purpose of searching the prevailing lattice plane of the minerals on thin section surface. Finally, for a selected peak by 2-circle oscillation measurement, X-ray pole figure measurement was executed for the purpose of check the degree of orientation of the single lattice direction and examine its pole distribution. As a result of 3-circle oscillation measurement, it was possible that phase identification among $Al_{2}SiO_{5}$ polymorphs. And from the results of 2-circle oscillation measurement and X-ray pole figure measurement, we recognized that poles of andalusite (122), kyanite (200) and sillimanite (310) lattice plances were well developed with direction normal to each mineral surface plane respectively. Therfore, the measurements used with micro-area X-ray diffractometer in this study will be a useful tool of phase identification and degree of orientation measurement for fine-grained rock forming minerals.

• Advances in nano research
• /
• v.1 no.4
• /
• pp.219-228
• /
• 2013

We report on the preparation of iron pyrite ($FeS_2$) using pulsed electron ablation of two targets, namely, a mixture of sulfur and iron compound target, and a natural iron pyrite target. Thin films of around 50 nm in thickness have been deposited on glass substrates under Argon background gas at 3 mTorr, and at a substrate temperature of up to $450^{\circ}C$. The thin films have been analyzed chemically and examined structurally using x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and visible Raman spectroscopy. The morphology and thickness of the films have been assessed using scanning electron microscopy (SEM) and visible spectroscopic reflectance. The preliminary findings, using a synthetic target, show the presence of iron pyrite with increasing proportion as substrate temperature is increased from $150^{\circ}C$ to $250^{\circ}C$. The data have not shown any evidence of pyrite in the deposited films from a natural target.

• Journal of the Korean Society for Industrial and Applied Mathematics
• /
• v.22 no.1
• /
• pp.29-62
• /
• 2018

We investigate a class of HIV infection models with two kinds of target cells: $CD4^+$ T cells and macrophages. We incorporate three distributed time delays into the models. Moreover, we consider the effect of humoral immunity on the dynamical behavior of the HIV. The viruses are produced from four types of infected cells: short-lived infected $CD4^+$T cells, long-lived chronically infected $CD4^+$T cells, short-lived infected macrophages and long-lived chronically infected macrophages. The drug efficacy is assumed to be different for the two types of target cells. The HIV-target incidence rate is given by bilinear and saturation functional response while, for the third model, both HIV-target incidence rate and neutralization rate of viruses are given by nonlinear general functions. We show that the solutions of the proposed models are nonnegative and ultimately bounded. We derive two threshold parameters which fully determine the positivity and stability of the three steady states of the models. Using Lyapunov functionals, we established the global stability of the steady states of the models. The theoretical results are confirmed by numerical simulations.

• Nuclear Engineering and Technology
• /
• v.37 no.3
• /
• pp.279-286
• /
• 2005

A prototype of a relativistic proton generation system, based on laser-induced plasma interaction, has been designed and fabricated. The system is composed of three major parts: a fs TW laser; a target chamber, including targets and controls; and a diagnostic system for charged particles and lasers. An Offner-type pulse stretcher for chirped pulse amplification (CPA) and eight pass pre-amplifier are installed. The main amplifier will be integrated with a new pumping laser. The design values of the laser at the first stage are 1 TW in power and 50 fs in pulse duration. We expect to generate protons with their maximum energy of approximately 3 MeV and the flux of at least $10^6$ per pulse using a 10 $\mu$m Al target. A prototype target chamber with eight 8-inch flanges, including target mounts, has been designed and fabricated. For laser diagnostics, an adaptive optics based on the Shack-Hartmann type, beam monitoring, and alignment system are all under development. For a charged particle, CR-39 detectors, a Thomson parabola spectrometer, and Si charged-particle detectors will be used for the density profile and energy spectrum. In this paper, we present the preliminary design for laser-induced proton generation. We also present plans for future work, as well as theoretical simulations.

• Proceedings of the KIEE Conference
• /
• 1993.07b
• /
• pp.612-614
• /
• 1993

Sputtering requires a way to bombard the target with sufficient momentum. Positive ions are the most convenient source since their energy and momentum can be controlled by applying a potential to the target. Although many types of discharges have been used for sputtering, magnetrons are now the most widely used because of the high ion current densities. Namely, plasma near the target electrode is confined by magnetic field using permanent magnet, so that the collision probability is increased. It is important to develop RF magnetron sputtering system which has many excellent merits compared with conventional methods. Our study aims to develop 1 kW RF source(13.56 MHz, TR type) and to accumulate the design and construction technology of RF magnetron sputter-deposition system. We developed 1 kW RF sputtering system to deposit thin film. These films are deposited by this RF source matched by auto-matching system using primarily argon gas. Target of Au, Ni, Al, and $SiO_2$ was well deposited on the argon pressure of 5-10 mTorr.

• Journal of Korean Society on Water Environment
• /
• v.27 no.6
• /
• pp.822-829
• /
• 2011

The purpose of the present study is to estimate the ecological instream flow for conservation and restoration of fish habitat in running water ecosystem which has very important status for stream environment. Estimation of the ecological instream flow in the present study was carried out by application of a two-dimensional depth averaged model of river hydrodynamics, River2D model. It can model fish habitat in natural streams and rivers and assess the quality of physical habitat accoriding to the species preferences for habitat suitability. Zacco platypus and Zacco temmincki were selected as target fish species in the study area of the Seomjin river. The Habitat Suitability Criteria (HSC) developed by Sung et al. (2005) were used for target fish species, life stages and habitat conditions in the study. Weighted usable area (WUA) was computed by the River2D model considering preferences of target fish species for velocity, depth, and channel substrate. The result revealed that the ecological instream flow of $10.0m^3/s$ is needed to maintain the target fish habitat at each life stage in the river.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.447-447
• /
• 2009

In this study, transparent and conductive Al-doped zinc oxide (AZO) films were prepared on Corning glass and silicon wafer substrate by RF magnetron sputtering method using an Al-doped ZnO target (Al: 2 wt.%) at room temperature as the thickness of 150 nm. We investigated the effects of the RF power between 100 Wand 350 W in steps of 50 W on structural, electrical and optical properties of AZO films. Also, we studied the effects of the working pressure (3, 4 and 5 mtorr) on that condition. The thickness and cross-sectional images of films were observed by field emission scanning electron microscopy (FE-SEM) and all of the films were kept to be constant to $150\pm10$ nm on Coming glass and silicon wafer. A grain size was calculated from X-ray diffraction (XRD) on using the Scherrer' equation and their electrical properties investigated hall effect electronic transport measurement system. Moreover, we measured transmittance of AZO films by UV/VIS spectrometer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.457-458
• /
• 2009

In this work, transparent conducting Al-doped zinc oxide (AZO) films were prepared on Coming glass substrate by RF magnetron sputtering using an Al-doped ZnO target (Al: 2 wt.%) at room temperature and all films were deposited with athickness of 150 nm. We investigated the effects of the post-annealing temperature and the annealing ambient on structural, electrical and optical properties of AZO films. The films were annealed at temperatures ranging from 300 to $500^{\circ}C$ in steps of $100^{\circ}C$ using rapid thermal annealing equipment in oxygen. The thickness of the film was observed by field emission scanning electron microscopy (FE-SEM) and grain size was calculated from the XRD spectra using the Scherrer equation and their electrical properties were investigated using a hole measurement and the reflectance of AZO films was investigated by UV-VIS spectrometry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.201-202
• /
• 2009

ZnO:Al transparent conductive films for solar cells were deposited on the glass substrates at room temperature by facing target sputtering (FTS) method. The sputtering targets were 100 mm diameter disks of 2w.t..%. AZO and Zn metal. ZnO:Al thin films were deposited as a function film thickness. A base pressure was $2{\times}10^{-6}$torr, and a working pressure was 1mTorr. The properties of thin films on the structural, electrical and optical properties of the deposited films were investigated using a four-point probe (Chang-min), an X-ray diffraction (Rigaku), a Hall Effect measurement (Ecopia), an UV/VIS spectrometer (HP) and a $\alpha$-step (Tencor). The lowest resistivity of film was $5.67{\times}10^{-4}[{\Omega}-cm]$ at 500nm. The average transmittance of over 80% was seen in the visible range.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
• /
• 2009.10a
• /
• pp.177-179
• /
• 2009

In order to investigate the possible application of ZnO films as a transparent conducting oxide (TCO) electrode, ZnO:Al films were prepared by RF magnetron sputtering method. The effects of surface treatment and doping concentration on the structural and electrical properties of ZnO films were mainly studied experimentally. Five-inch PDP cells using either a ZnO:Al or indium tin oxide (ITO) electrode were also fabricated separately under the same manufacturing conditions. The luminous properties of both the transparent conducting oxide electrode were measured and compared with each other. By doping the ZnO target with 2 wt% of Al2O3, the film deposited at a chemical surface treatment resulted in the minimum resistivity of 8.5 _ 10_4 U-cm and a transmittance of 91.7%. And DBD surface treatment resulted in the minimum resistivity of 8.5 _ 10_4 U-cm and a transmittance of 91.7%. Although the luminance and luminous efficiency of the transparent conducting oxide electrode using ZnO:AI are lower than those of the cell with the ITO electrode by about 10%, these values are sufficient enough to be considered for the normal operation of TCO.