• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.826-831
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• 2009

In this paper, a high power RF amplifier module using AlN substrate of high thermal conductivity has been proposed. This RF amplifier module has the advantage of compact size and effective heat dissipation for the packaging of high power chip. To fabricate the thru-hole and scribing line on AlN substrate, the key parameters of $CO_2$ laser were experimented. And then, microstrip lines and spiral planar inductors were fabricated on an AlN substrate using the thin-film process. The fabricated microstrip lines on the AlN substrate has an attenuation value of 0.1 dB/mm up to 10 GHz. The fabricated spiral planar inductor has a high quality factor, a maximum of about 62 at 1 GHz for a 5.65 nH inductor. Packaging of a RF power amplifier was implemented on an AlN substrate with thru-hole. From the measured results, the gain is 24 dB from 13 to 15 GHz and the output power is 33.65 dBm(2.3 W).

• Korean Journal of Materials Research
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• v.31 no.8
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• pp.439-444
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• 2021

The oxidation resistance of the diffusion aluminide bond coat (BC) is compromised largely by interdiffusion (ID) effects on coated turbine blades of aeroengines. The present study is designed to understand the influence of ID on βNiAl coatings or BC. In this regard, nickel substrate and CMSX-4 superalloy are deposited. In total, four sets of BCs are developed, i.e. pure βNiAl (on Ni substrate), simple βNiAl (on CMSX-4 substrate), Zr-βNiAl (on CMSX-4 substrate) and Pt-βNiAl (on CMSX-4 substrate). The main aim of this study is to understand the interdiffusion of Al, Zr and Pt during preparation and oxidation. In addition, the beneficial effects of both Zr and platinum are assessed. Pure βNiAl and simple βNiAl show Ni-out-diffusion, whereas for platinum inward diffusion to the substrate is noticed under vacuum treatment. Interestingly, Zr-βNiAl shows the least ID in all BCs and exhibit stability under both vacuum and oxidation treatments. However, its spallation resistance is slightly lower than that of Pt-βNiAl BC. All BCs show similar oxide growth trends, except for Zr-βNiAl, which exhibits two-stage oxidations, i.e. transient and steady-state. Moreover, it is suggested that the localized spallation in all BCs is caused by βNiAl - γ'-Ni₃Al transformation.

• Tribology and Lubricants
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• v.28 no.2
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• pp.56-61
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• 2012

In order to investigate the possibility of Ni-Al based intermetallics coating onto aluminum substrate, the coating process for induction heating has been evaluated by microscopically analyzing the intermetallic layers coated at temperatures lower than the melting temperature of aluminum. The coating layers were divided into two parts with different microstructure along the depth. Hard $NiAl_3$ layer was found at lower parts of the coatings near the interface with aluminum substrate. This layer was formed by the diffusion of aluminum atoms from the substrate into the coating layer across the interface during the induction heating. Meanwhile, at the upper parts of the coating near the surface, a large amount of un-reacted Ni was still remained and surrounded by several Ni-Al based intermetallic compounds, such as $Ni_3Al$, NiAl and $Ni_2Al_3$ formed by the lattice diffusion.

• Korean Journal of Materials Research
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• v.31 no.1
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• pp.38-42
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• 2021

In this study, high temperature wetting analysis and AZ80/Ti interfacial structure observation are performed for the mixture of AZ80 and Ti, and the effect of Al on wetting in Mg alloy is examined. Both molten AZ80 and pure Mg have excellent wettability because the wet angle between molten droplets and the Ti substrate is about 10° from initial contact. Wetting angle decreases with time, and wetting phenomenon continues between droplets and substrate; the change in wetting angle does not show a significant difference when comparing AZ80-Ti and Mg-Ti. As a result of XRD of the lower surface of the AZ80-Ti sample, in addition to the Ti peak of the substrate, the peak of TiAl3, which is a Ti-Al intermetallic compound, is confirmed, and TiAl3 is generated in the Al enrichment region of the Ti substrate surface. EDS analysis is performed on the droplet tip portion of the sample section in which pure Mg droplets are dropped on the Ti substrate. Concentration of oxygen by the natural oxide film is not confirmed on the Ti surface, but oxygen is distributed at the tip of the droplet on the Mg side. Molten AZ80 and Ti-based compound phases are produced by thickening of Al in the vicinity of Ti after wetting is completed, and Al in the Mg alloy does not affect the wetting. The driving force of wetting progression is a thermite reaction that occurs between Mg and TiO2, and then Al in AZ80 thickens on the Ti substrate interface to form an intermetallic compound.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.463-467
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• 2008

Aluminum nitride (AlN) thin films have been deposited on Au electrodes by using reactive RF magnetron sputtering method in a gas mixture of Ar and $N_2$ at different substrate temperature. It was found that substrate temperature was varied in the range up to $400^{\circ}C$, highly c-axis oriented film can be obtained at $300^{\circ}C$ with full width at half maximum (FWHM) $3.1^{\circ}$. Increase in surface roughness from 3.8 nm to 5.9 nm found to be associated with increase in grain size, with substrate temperature; however, the AlN film fabricated at $400^{\circ}C$ exhibited a granular type of structure with non-uniform grains. The Al 2p and N 1s peak in the X-ray photoelectron spectroscopy (XPS) spectrum confirmed the formation of Al-N bonds. The XPS spectrum also indicated the presence of oxynitrides and oxides, resulting from the presence of residual oxygen in the vacuum chamber. It is concluded that the AlN film deposited at substrate temperature of $300^{\circ}C$ exhibited the most desirable properties for the application of high-frequency surface acoustic devices.

• Journal of the Korean Applied Science and Technology
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• v.30 no.3
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• pp.423-430
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• 2013

Carbon coils could be synthesized using $C_2H_2/H_2$ as source gases and $SF_6$ as an incorporated additive gas under thermal chemical vapor deposition (CVD) system. Prior to the carbon coils deposition reaction, two kinds of samples having different combination of Ni catalyst and substrate were employed, namely, a commercially-made $Al_2O_3$ ceramic boat with Ni powders and a commercially-made $Al_2O_3$ substrate with Ni layer. By using a commercially-made $Al_2O_3$ ceramic boat, the synthesis of carbon coils could be enhanced as much as 10 times higher than that of $Al_2O_3$ substrate. Furthermore, the dominant formation of the microsized carbon coils could be obtained by using $Al_2O_3$ ceramic boat. The surface roughness of the supporting substrate of $Al_2O_3$ ceramic boat was understood to be associated with the large scale synthesis of carbon coils as well as the dominant formation of the larger-sized, namely the microsized carbon coils.

• Journal of the Korean institute of surface engineering
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• v.54 no.3
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• pp.133-138
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• 2021

Ternary Ti-X-N coatings, where X = Al, Si, Cr, O, etc., have been widely used for machining tools and cutting tools such as inserts, end-mills, and etc. Ti-Al-N-O coatings were deposited onto silicon wafer and WC-Co substrates by a cathodic arc evaporation (CAE) technique at various negative substrate bias voltages. In this study, the influence of substrate bias voltages during deposition on the microstructure and mechanical properties of Ti-Al-N-O coatings were systematically investigated to optimize the CAE deposition condition. Based on results from various analyses, the Ti-Al-N-O coatings prepared at substrate bias voltage of -80 V in the process exhibited excellent mechanical properties with a higher compressive residual stress. The Ti-Al-N-O (-80 V) coating exhibited the highest hardness around 30 GPa and elastic modulus around 303 GPa. The improvement of mechanical properties with optimized bias voltage of -80 V can be explained with the diminution of macroparticles, film densification and residual stress induced by ion bombardment effect. However, the increasing bias voltage above -80 V caused reduction in film deposition rate in the Ti-Al-N-O coatings due to re-sputtering and ion bombardment phenomenon.

• Journal of Advanced Marine Engineering and Technology
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• v.32 no.3
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• pp.461-467
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• 2008

It was studied the effect of a pre-deposited ultrathin Al layer as part of a buffer layer for the growth of GaN. AlN buffer layers were deposited on a Si(111) substrate using an RF sputtering technique, followed by GaN using hydride vapor phase epitaxy (HVPE). Several atomic layers of Al were deposited prior to AlN sputtering and the samples were compared with the others grown without pre-deposition of Al. And it was also studied the influence of AlN buffer layer thickness on the growth of GaN. The peak wavelength of the photoluminescence (PL) was varied with increasing the thickness of the GaN and AlN layers. The optimum thickness of AlN on a Si(111) substrate with an ultrathin Al layer was about $260{\AA}$. Scanning electron microscope (SEM) images showed coalescent surface morphology and X-ray diffraction (XRD) showed a strongly oriented GaN(0002) peak.

• Corrosion Science and Technology
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• v.18 no.3
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• pp.73-77
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• 2019

Hot-dip aluminized coating has been widely used to protect steel substrate against corrosion. In this study, the corrosion behavior of hot-dip aluminized type 409L (11% Cr) stainless steel (SS) was investigated using macro- and micro-scale polarization tests. An Al-Fe-Si alloy layer that was formed due to inter-diffusion of alloying elements between Al coating and SS substrate was observed between Al coating and 409L SS substrate. In both macro- and micro-scale polarization tests, the corrosion potential ($E_{corr}$) of the 409L SS substrate was much nobler than that of the Al coating and alloy layer. $E_{corr}$ of the alloy layer was between that of Al coating and 409L SS substrate. This indicates that the alloy layer can act as a buffer between the more active Al coating and the nobler SS substrate for pit growth in aluminized SS. The presence of the alloy layer appears to be helpful in hindering pitting corrosion of aluminized SS.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.116-119
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• 2005

Al doped ZnO thin films (ZnO:Al) were deposited on poly carbonate (PC) substrate by rf magnetron sputtering. In addition, the electrical, optical properties of the films prepared at various conditions were investigated. As the sputter power increased, the resistivity of ZnO:Al films decreased, regardless of substrate types. However, the resistivity of the films increased with the sputter pressure. The ZnO:Al films were increasingly dark gray colored as the sputter power increased, resulting in the loss of transmittance. High quality films with resistivity as low as 1.43${\times}$10$^{-4}$ Ω-cm and transmittance over 80 % have been obtained by suitably controlling the deposition parameters.