• Korean Journal of Materials Research
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• v.29 no.8
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• pp.463-468
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• 2019

The electrical and interfacial properties of $HfO_2/Al_2O_3$ and $Al_2O_3/HfO_2$ dielectrics on AlN/p-Ge interface prepared by thermal atomic layer deposition are investigated by capacitance-voltage(C-V) and current-voltage(I-V) measurements. In the C-V measurements, humps related to mid-gap states are observed when the ac frequency is below 100 kHz, revealing lower mid-gap states for the $HfO_2/Al_2O_3$ sample. Higher frequency dispersion in the inversion region is observed for the $Al_2O_3/HfO_2$ sample, indicating the presence of slow interface states A higher interface trap density calculated from the high-low frequency method is observed for the $Al_2O_3/HfO_2$ sample. The parallel conductance method, applied to the accumulation region, shows border traps at 0.3~0.32 eV for the $Al_2O_3/HfO_2$ sample, which are not observed for the $Al_2O_3/HfO_2$ sample. I-V measurements show a reduction of leakage current of about three orders of magnitude for the $HfO_2/Al_2O_3$ sample. Using the Fowler-Nordheim emission, the barrier height is calculated and found to be about 1.08 eV for the $HfO_2/Al_2O_3$ sample. Based on these results, it is suggested that $HfO_2/Al_2O_3$ is a better dielectric stack than $Al_2O_3/HfO_2$ on AlN/p-Ge interface.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.146-151
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• 2004

We investigated the effects of high potential barriers on the optical characteristics of InAs quantum dots (QDs) by using photoluminescence (PL) and photoreflectance (PR) spectroscopy. A sample with regular InAs quantum dots on GaAs was grown by molecular beam epitaxy (MBE) as a reference. Another InAs QDs sample was embedded in single AlGaAs barriers. On the other hand, a sample with GaAs/AlGaAs superlattice barriers was adopted for comparison with a sample with a single AlGaAs layer. In results, we found that the emission wavelength of QDs was effectively tailored by using high potential barriers. Also, it was found that the optical properties of a sample with QDs embedded in GaAs/AlGaAs superlattices were better than those of a sample with QDs embedded in a single layer of AlGaAs barriers. We believe that GaAs/AlGaAs superlattice could effectively prevent the generation of defects.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.32 no.6
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• pp.199-204
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• 1983

In this paper, we investigated that the Al-Amorphous Se-Al structure had a large photovoltage and a Dark EMF (DEMF). This DEMF phenomena did not show just after the fabrication of a sample. However, it was shown after a few days, and it was increased with time, and was saturated after 30 days. Just after the fabrication of a sample, by appling the positive voltage on a sample for 100mins, we observed almost the same effect as had shown in a aging experiment. As the results, we found that Al3+ ions has related to a DEMF by migrating into amorphous Se, and form a trap in amorphous Se. We have also observed the photocapacitance effect to identify this trap formation.

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.473-478
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• 2002

${\alpha}-Al_2O_3$ platelets were synthesized by microwave heating the two different powder mixtures of $Al_2(SO_4)_3+2Na_2SO_4$ and ${\gamma}-Al_2O_3+2Na_2SO_4$ using flux method. DTA-TG, XRD and SEM were used to investigate the effect of microwave on the formation of ${\alpha}-Al_2O_3$ platelets. In the case of the mixture of $Al_2(SO_4)_3+2Na_2SO_4$, the microwave heated sample was ${\alpha}-Al_2O_3$ platelets composed of aggregates with smaller particle size compared to the conventionally heated sample. In the case of the mixture of ${\gamma}-Al_2O_3+2Na_2SO_4$, the temperature to form ${\alpha}-Al_2O_3$ platelets by the microwave heating was lower than that by the conventional heating and the morphology of the microwave heated sample was similar to that of the conventionally heated sample except that the microwave heated sample had smaller particle size compared to the conventionally heated sample.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.382-383
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• 2006

본 연구에서는 열처리 본딩장비를 실제로 개발하여 Al/Sus와 Al/Al의 두 재료를 서로 본딩 하였다. 열처리 본딩 실험을 하기 위해서 열처리시에 온도분포를 정확히 파악하기 위해서 컴퓨터모의실험으로 같은 재료인 Al/Al과 서로 다른 재료인 Al/Sus의 온도분포를 나타내었다. 본딩된 두 가지의 sample들을 FESEM으로 접합부의 표면조직 상태를 측정하였고 인장력측정 장치로 bonding strength를 측정하였다. 접착제를 사용한 본딩 sample 보다는 더 본딩 결합력이 크다는 것을 확인할 수 있었다.

• Korean Journal of Materials Research
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• v.21 no.2
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• pp.120-124
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• 2011

Silicon heterojunction solar cells have been studied by many research groups. In this work, silicon heterojunction solar cells having a simple structure of Ag/ZnO:Al/n type a-Si:H/p type c-Si/Al were fabricated. Samples were fabricated to investigate the effect of transparent conductive oxide growth conditions on the interface between ZnO:Al layer and a-Si:H layer. One sample was deposited by ZnO:Al at low working pressure. The other sample was deposited by ZnO:Al at alternating high working pressure and low working pressure. Electrical properties and chemical properties were investigated by light I-V characteristics and AES method, respectively. The light I-V characteristics showed better efficiency on sample deposited by ZnO:Al by alternating high working pressure and low working pressure. Atomic concentrations and relative oxidation states of Si, O, and Zn were analyzed by AES method. For poor efficiency samples, Si was diffused into ZnO:Al layer and O was diffused at the interface of ZnO:Al and Si. Differentiated O KLL spectra, Zn LMM spectra, and Si KLL spectra were used for interface reaction and oxidation state. According to AES spectra, sample deposited by high working pressure was effective at reducing the interface reaction and the Si diffusion. Consequently, the efficiency was improved by suppressing the SiOx formation at the interface.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.10
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• pp.1311-1316
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• 1995

The electrical properties of the Langmuir-Blodgett (LB) films layered with arachidic acid were studied at the room temperature. The sample was formed with 2 different structure ; One was Al/LB/Al and the other was Au/LB/Au. The precise structure of Al/LB/Al was considered as Al/Al$_{2}$O$_{3}$/LB/Al, because the natural oxide layer was formed on surface of lower Al electrode. The electrical conductivity of Al/Al$_{2}$O$_{3}$/LB/Al structure was determined the value of 3.5 * 10$^{-14}$ S/cm from the measurement of current-voltage (I-V) characteristics. The sample with the structure of Au/LB/Au was made to eliminate the influence of oxide layer in the electrical properties of the LB films. The short circuit current was observed in this sample from the I-V characteristics. To verify the reason of short circuit current generation, copper decoration method was employed to the 15 layers of LB films deposited on the Al and Au electrode each. The defects were shown on the films deposited with Au electrode. This results means that the defects on the LB films which layered with the Au electrode were contributed to the short circuit current. Several films (15, 31, 51, 71L) were deposited on the Au electrode and measured the size of defects with the copper decoration method. The size of defects becomes smaller as the film layer was increased. We conclude that the existence of defects affects the short circuit current generation.

• Bulletin of the Korean Chemical Society
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• v.35 no.5
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• pp.1516-1522
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• 2014

A series of 20 wt % $(NH_4)_2SO_4$ and 3 wt % $Al_2O_3$ surface treatments were applied to $Li[Li_{0.2}Mn_{0.54}Co_{0.13}Ni_{0.13}]O_2$ substrates. The $Li[Li_{0.2}Mn_{0.54}Co_{0.13}Ni_{0.13}]O_2$ substrates were synthesized using a co-precipitation method. Sample (a) was left pristine and variations of the 20 wt % $(NH_4)_2SO_4$ and 3 wt % $Al_2O_3$ were applied to samples (b), (c) and (d). XRD was used to verify the space group of the samples as R$\bar{3}$m. Additional morphology and particle size data were obtained using SEM imagery. The $Al_2O_3$ coating layers of sample (b) and (d) were confirmed by TEM images and EDS mapping of the SEM images. 2032-type coin cells were fabricated in a glove box in order to investigate their electrochemical properties. The cells were charged and discharged at room temperature ($25^{\circ}C$) between 2.0V and 4.8V during the first cycle. The cells were then charged and discharged between 2.0V and 4.6V in subsequent cycles. Sample (d) exhibited lower irreversible capacity loss (ICL) in the first charge-discharge cycle as compared to sample (c). Sample (d) also had a higher discharge capacity of ~250 mAh/g during the first and second charge-discharge cycles when compared with sample (c). The rate capability of the $Al_2O_3$-coated sample (b) and (d) was lower when compared with sample (a) and (c). Sample (d), coated with $Al_2O_3$ after the surface treatment with $(NH_4)_2SO_4$, showed an improvement in cycle performance as well as an enhancement of discharge capacity. The thermal stability of sample (d) was higher than that of the sample (c) as the result of DSC.

• Journal of applied mathematics & informatics
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• v.9 no.2
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• pp.825-835
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• 2002

In this paper, we extend the conditional unrelated question model which was suggested by Lee and Hong(2000) to two-sample case when there is no information about the true proportion of the unrelated character Y. Conditions are obtained under which the proposed model is more efficient than Carr et al.\`s conditional modal and Greenberg et al.'s two-sample unrelated question model.

• Korean Journal of Materials Research
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• v.27 no.7
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• pp.364-368
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• 2017

We performed temperature dependent current-voltage (I-V) measurements to characterize the electrical properties of $Au/Al_2O_3/n-Ge$ metal-insulator-semiconductor (MIS) diodes prepared with and without $H_2O$ prepulse treatment by atomic layer deposition (ALD). By considering the thickness of the $Al_2O_3$ interlayer, the barrier height for the treated sample was found to be 0.61 eV, similar to those of Au/n-Ge Schottky diodes. The thermionic emission (TE) model with barrier inhomogeneity explained the final state of the treated sample well. Compared to the untreated sample, the treated sample was found to have improved diode characteristics for both forward and reverse bias conditions. These results were associated with the reduction of charge trapping and interface states near the $Ge/Al_2O_3$ interface.