• Proceedings of the KIEE Conference
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1529-1531
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• 2003

Thick film mechanical sensors can be categorized into four main areas piezoresistive, piezoelectric, piezocapastive and mechanic tube. In this areas, the thick film strain gage is the earliest example of a primary sensing element based on the substrates. The latest thick film sensor is used various pastes that have been specifically developed for pressure sensor application. The screen printing technique has been used to fabricate the pressure sensors on alumina substrate($Al_2O_3$). Thick film capacitive of strain sensing characteristics are reported and dielectric paste based on (Ti+Ba) materials. The electric property of dielectric paste has been studied and exhibit good properly with good gage factor comparable to piezoresistive strain gage. New piezocapacitive strain sensor was designed and tested. The output of capacitive value was good characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.323-323
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• 2013

High power light-emitting diodes (LEDs) are widely used in many device applications due to its ability to operate at high power and produce high luminance. However, releasing the heat accumulated in the device during operating time is a serious problem that needs to be resolved to ensure high optical efficiency. Ceramic or Aluminium base metal printed circuit boards are generally used as integral parts of communication and power devices due to its outstanding thermal dissipation capabilities as heat sink or heat spreader. We investigated the characterisation of electroless plating of Ni-B film according to plating bath temperature, ranging from $50^{\circ}C$ to $75^{\circ}C$ on Ag paste/anodised Al ($Al_2O_3$)/Al substrate to be used in metal PCB for high power LED packing systems. X-ray diffraction (XRD), Field-Emission Scanning Electron Microscopy (FE-SEM) and X-ray Photoelectron Spectroscopy (XPS) were used in the film analysis. By XRD result, the structure of the as deposited Ni-B film was amorphous irrespective of bath temperature. The activation energy of electroless Ni-B plating was 59.78 kJ/mol at the temperature region of $50{\sim}75^{\circ}C$. In addition, the Ni-B film grew selectively on the patterned Ag paste surface.

• The KIPS Transactions:PartC
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• 제14C권5호
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• pp.439-452
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• 2007

We study on the privacy preserving data mining, PPDM for short, by using randomization. The theoretical PPDM based on the secure multi-party computation techniques is not practical for its computational inefficiency. So we concentrate on a practical PPDM, especially randomization technique. We survey various privacy measures and study on the privacy preserving mining of association rules by using randomization. We propose a new randomization operator, binomial selector, for privacy preserving technique of association rule mining. A binomial selector is a special case of a select-a-size operator by Evfimievski et al.[3]. Moreover we present some simulation results of detecting an appropriate parameter for a binomial selector. The randomization by a so-called cut-and-paste method in [3] is not efficient and has high variances on recovered support values for large item-sets. Our randomization by a binomial selector make up for this defects of cut-and-paste method.

• Korean Journal of Materials Research
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• 제33권2호
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• pp.63-70
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• 2023

In this study, crystallization was effectively suppressed in Al-based metallic glasses (Al-MGs) during pulverization by cryo-milling by applying an extremely low processing temperature and using a surfactant. Before Al-MGs can be used as an additive in Ag paste for solar cells, the particle sizes of the Al-MGs must be reduced by milling. However, during the ball milling process crystallization of the Al-MG is a problem. Once the Al-MG is crystallized, they no longer exhibit glass-like behavior, such as thermoplastic deformation, which is critical to decrease the electrical resistance of the Ag electrode. The main reason for crystallization during the ball milling process is the heat generated by collisions between the particles and the balls, or between the particles. Once the heat reaches the crystallization temperature of the Al-MGs, they start crystallization. Another reason for the crystallization is agglomeration of the particles. If the initially fed particles become severely agglomerated, they coalesce instead of being pulverized during the milling. The coalesced particles experience more collisions and finally crystallize. In this study, the heat generated during milling was suppressed by using cryo-milling with liquid-nitrogen, which was regularly fed into the milling jar. Also, the MG powders were dispersed using a surfactant before milling, so that the problem of agglomeration was resolved. Cryo-milling with the surfactant led to D50 = 10 um after 6 h milling, and we finally achieved a specific contact resistance of 0.22 mΩcm² and electrical resistivity of 2.81 μΩcm using the milled MG particles.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.122.2-122.2
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• 2015

n-type 실리콘은 p-type과 비교하여 더 높은 소수캐리어 lifetime 으로 금속 불순물에 대하여 더 좋은 내성을 갖는다. 고효율 실리콘 태양전지를 위하여 p-type 웨이퍼를 n-type으로 교체하여 빛을 조사했을 때, 광전자들이 형성되어 p-type과 비교하여 더 좋은 lifetime 안정성을 갖는다. n-type 태양전지의 전면 전극은 AgAl paste로 형성하였다. AgAl 페이스트는 소성 온도와 밀접하게 관련되어 전극의 접합 깊이에 영향을 미친다. p+ emitter 층에 파고드는 금속 접촉의 최적화된 깊이는 접촉 저항에 영향을 미치는 중요한 요소이다. 본 연구에서는 소성 조건을 변화시킴으로써, 금속 깊이의 효과적인 형성을 위한 소성 조건을 최적화하였다. $670^{\circ}C$ 이하의 온도에서 소성을 진행 하였을 때, 충분한 접촉 깊이를 형성하지 못하여 높은 접촉저항을 갖는다. 소성 온도가 증가함에 따라, 접촉 저항은 감소하였다. 최적 소성 온도 $865^{\circ}C$에서 측정된 접촉저항은 $5.99mWcm^2$이다. $900^{\circ}C$ 이상에서 contact junction은 emitter를 통과하여 실리콘과 결합하였다. 그 결과로 접촉저항 shunt가 발생한다.

• Journal of the Microelectronics and Packaging Society
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• 제3권2호
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• pp.39-50
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• 1996

본 연구에선 주어진 조성의 알루미나 green sheet에 대하여 텅스텐의 입경 및 산화 물의 조성을 변화시키므로써 수축률을 제어하여 camber를최소화하여 결합강도를 최대로 하 는 텅스텐 페스트조성을 찾아내는 것을 목적으로 하였다. 본 실험에서 사용한 텅스텐 분말 의 입경은 0.35$\mu$m, 0.6$\mu$m, 0.72$\mu$m, $1.5\mu$m, 1.9$\mu$m, 3.2$\mu$m이며 frit는 Al2O3, MgO, SiO2 와 Al2O3, CaO, SiO2를 사용하여 각각의 조성에 따라 함량을 변화시키며 실험하였다. 소성 은 154$0^{\circ}C$로 습윤 수소분위기에서 시행하였으며 사용된 알루미나 green sheet의 알루미나 중심 입경은 2.8$\mu$m이었다. 분석은 주사전자 현미경으로 미세구조를 관찰하였고 EPMA Line Profile로 원소 분석을 하였으며 잔류응력을 측정하기 위하여 XRD분석을 하였다. Frit 을 함유하지 않은 경우 텅스텐 분말의 입경이 1.9$\mu$mdlfEo 최대 접합 강도를 나타내었다. Frit을 함유한 경우 Mgo계 frit조성에서는 MgO/Al2O3/SiO3=1/1/1일 때 CaO계 frot 조성에 서는 CaO/Al2O3/SiO2=1/2/1일 때 최대 접합 강도를 나타내었다. Frit 함량을 변화시킨 경우 MgO계는 10wt%함유하였을 때 CaO 계는 5wt%함유하였을 때 최대 접합강도를 나타내었 다. Frit 함량을 변화시킨 경우 MgO계는 10wt%함유하였을 때, CaOr계는 5wt%함유하였을 때 최대 접합강도를 나타내었다.

• Corrosion Science and Technology
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• 제20권6호
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• pp.475-483
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• 2021

Additively manufactured titanium alloy is one of the promising materials in advanced medical industries. However, these additively manufactured alloys show corrosion properties different from those of conventional materials due to their unique microstructure. In this study, the effect of surface roughness and masking conditions on the results of the potentiodynamic polarization tests on additively manufactured or conventional Ti-6Al-4V alloys in artificial saliva solution with or without fluoride was investigated. The results showed that the corrosion potential was slightly lower with a flat cell with an O-ring than with masking tape. The corrosion rate was decreased with decreases in the surface roughness. Localized corrosion involving delamination of the surface layer occurred at 7 ~ 9 V (SSC) on the additively manufactured alloy in solution with or without fluoride when the samples were finished with 1000-grit SiC paper, whereas localized corrosion was not observed in the specimens finished with 1-㎛ alumina paste.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.73.1-73.1
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• 2010

태양광 시장은 세계적인 금융 위기 속에서도 점점 그 규모가 확대되고 있다. 시장의 규모가 확대되고 있음에도 불구하고 금융 위기를 겪으면서 생산자 중심의 시장에서 수요자 중심의 시장으로 바뀌게 되었다. 이에 따라 더 적은 비용으로 높은 출력의 제품만이 경쟁력을 가지게 됨으로써 효율이 더욱 이슈화되었다. 여러 태양전지 중 가장 점유율이 높은 결정질 태양전지는 일반적인 양산 공정만으로 효율을 높이는데 한계가 있으므로 selective emitter, back contact, light induced plating 등의 새로운 공정을 도입하여 효율을 높이려는 경향이 나타나고 있다. 본 연구에서는, ALD 장치를 사용하여 결정질 태양전지의 후면을 passivation 함으로써 효율을 높이는 방법을 모색하였다. 부동화 층으로는 $Al_2O_3$를 사용하였으며 셀을 제조하여 평가하였다. 실험방법은 p-type의 웨이퍼를 이용하여 습식으로 texturing 후 $POCl_3$ 용액으로 p-n junction을 형성하였고 anti-reflection 막인 SiNx는 PECVD를 사용하여 R.I 2.05, 80nm 두께로 증착하였다. 그런 다음 후면의 n+ layer를 제거하기 위하여 SiNx에 영향을 미치지 않는 용액을 사용하여 후면을 식각하였다. BSF 층은 screen printer로 Al paste를 printing하여 형성하였고 Al etching용액으로 여분의 Al제거한 후 ALD 장치를 이용하여 $Al_2O_3$를 증착하였다. 마지막으로 전극을 형성한 후 laser로 isolation하여 효율을 평가하였다.

• Metals and materials international
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• 제24권6호
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• pp.1256-1261
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• 2018

Both thermoplastic formability and electrical conductivity of Al-Ni-Y metallic glass with 12 different compositions have been investigated in the present study with an aim to apply as a functional material, i.e. as a binder of Ag powders in Ag paste for silicon solar cell. The thermoplastic formability is basically influenced by thermal stability and fragility of supercooled liquid which can be reflected by the temperature range for the supercooled liquid region (${\Delta}T_x$) and the difference in specific heat between the frozen glass state and the supercooled liquid state (${\Delta}C_p$). The measured ${\Delta}T_x$ and ${\Delta}C_p$ values show a strong composition dependence. However, the composition showing the highest ${\Delta}T_x$ and ${\Delta}C_p$ does not correspond to the composition with the highest amount of Ni and Y. It is considered that higher ${\Delta}T_x$ and ${\Delta}C_p$ may be related to enhancement of icosahedral SRO near $T_g$ during cooling. On the other hand, electrical resistivity varies with the change of Al contents as well as with the change of the volume fraction of each phase after crystallization. The composition range with the optimum combination of thermoplastic formability and electrical conductivity in Al-Ni-Y system located inside the composition triangle whose vertices compositions are $Al_{87}Ni_3Y_{10}$, $Al_{85}Ni_5Y_{10}$, and $Al_{86}Ni_5Y_9$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제29권8호
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• pp.461-465
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• 2016

n-type silicon shows the better tolerance towards metal impurities with a higher minority carrier lifetime compared to p-type silicon substrate. Due to better lifetime stability as compared to p-type during illumination made the photovoltaic community to switch toward n-type wafers for high efficiency silicon solar cells. We fabricated the front electrode of the n-type solar cell with AgAl paste. The electrodes characteristics of the AgAl paste depend on the contact junction depth that is closely related to the firing temperature. Metal contact depth with p+ emitter, with optimized depth is important as it influence the resistance. In this study, we optimize the firing condition for the effective formation of the metal depth by varying the firing condition. The firing was carried out at temperatures below $670^{\circ}C$ with low contact depth and high contact resistance. It was noted that the contact resistance was reduced with the increase of firing temperature. The contact resistance of $5.99m{\Omega}cm^2$ was shown for the optimum firing temperature of $865^{\circ}C$. Over $900^{\circ}C$, contact junction is bonded to the Si through the emitter, resulting the contact resistance to shunt. we obtained photovoltaic parameter such as fill factor of 76.68%, short-circuit current of $40.2mA/cm^2$, open-circuit voltage of 620 mV and convert efficiency of 19.11%.