• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.282-283
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• 2005

Ion beam assisted deposition(IBAD) technique was used to produce biaxially textured polycrystalline MgO thin films for high critical current YBCO coated conductor. Hastelloy tapes were continuous electropolished with very smooth surface for IBAD-MgO deposition, RMS roughness of Hastelloy tape values below 2 nm and local slope of less than $1^{\circ}$. After the polishing of the tape an amorphous $Y_2O_3$ and $Al_2O_3$ are deposited Biaxially textured MgO was deposited on amorphous layer bye-beam evaporation with a simultaneous bombardment of high energy ions. We had developed the RHEED to measure in-situ biaxial texture of film surface as thin as tens angstrom. And also ex-situ characterization of buffer layers was studied using XRD and SEM. The full-width at half maximum(FWHM) out of plane texture of IBAD-MgO template is $4^{\circ}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.206-206
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• 2010

정보화 기술이 급속히 발전함에 따라서 보다 많은 양의 data를 전송, 처리, 저장 하게 되면서 이를 처리 할 수 있는 대용량, 고속, 비휘발성의 차세대 메모리의 개발이 요구 되고 있다. 이 중 저항 변화 메모리(ReRAM)는 일반적으로 전이금속산화물을 이용한 MIM 구조로서 적당한 전기 신호를 가하면 저항이 높아서 전도되지 않는 상태(Off state)에서 저항이 낮아져 전도가 가능한 상태(On state)로 바뀌는 메모리 특성을 가진다. ReRAM은 비휘발성 메모리이며 종래의 비휘발성 기억소자인 Flash memory 보다 access time이 $10^5$배 이상 빠르며, 2~5V 이하의 낮은 전압에서 동작이 가능하다. 또한 구조가 간단하여 공정상의 결함을 현저히 줄일 수 있다는 점 등 많은 장점들이 있어서 Flash memory를 대체할 수 있는 유력한 후보로 여겨지고 있다. 저항 변화의 특징을 잘 나타내는 물질에는 $TiO_2$, $Al_2O_3$, $NiO_2$, $HfO_2$, $ZrO_2$등의 많은 전이금속산화물들이 있다. 본 연구에서는 Reactive DC-magnetron Sputtering 방법과 DC-magnetron sputter를 이용하여 Ti를 증착한 후 Oxidation 방법으로 각각 증착한 $TiO_2$박막을 사용하여 저항변화특성을 관찰하였다. $TiO_2$상부에 Atomic Layer Deposition (ALD)를 이용하여 $HfO_2$ 박막을 증착하여 표면처리를 하고, 또한 $TiO_2$에 다른 전이 금속박막 층을 추가 증착하여 저항변화 특성에 접합한 조건을 찾는 연구를 진행하였다. 하부 전극과 상부 전극 물질로는 Si 100 wafer 위에 Pt 또는 TiN을 사용하였다. 저항변화 특성을 평가하기 위해 Agilent E5270B를 이용하여 current-voltage (I-V)를 측정하였다. X-ray Diffraction (XRD)를 이용하여 증착 된 전기금속 박막 물질의 결정성을 관찰했으며, Atomic Force Microscopy (AFM)을 이용하여 증착 된 샘플의 표면을 관찰했다. SEM과 TEM을 통해서는 sample의 미세구조를 확인 하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.77.1-77.1
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• 2013

Atomic layer deposition (ALD) is known for its self-limiting reaction, which offers atomic-level controllability of the growth of thin films for a wide range of applications. The self-limiting mechanism leads to very useful properties, such as excellent uniformity over a large area and superior conformality on complex structures. These unique features of ALD provide promising opportunities for future electronics. Although the ALD of Al2O3 film (using trimethyl-aluminum and water as a metal precursor and oxygen source, respectively) can be regarded as a representative example of an ideal ALD based on the completely self-limiting reaction, there are many cases deviating from the ideal ALD reaction in recently developed ALD processes. The nonconventional aspects of the ALD reactions may strongly influence the various properties of the functional materials grown by ALD, and the lack of comprehension of these aspects has made ALD difficult to control. In this respect, several dominant factors that complicate ALD reactions, including the types of metal precursors, non-metal precursors (oxygen sources or reducing agents), and substrates, will be discussed in this presentation. Several functional materials for future electronics, such as higher-k dielectrics (TiO2, SrTiO3) for DRAM application, and resistive switching materials (NiO) for RRAM application, will be addressed in this talk. Unwanted supply of oxygen atoms from the substrate or other component oxide to the incoming precursors during the precursor pulse step, and outward diffusion of substrate atoms to the growing film surface even during the steady-state growth influenced the growth, crystal structure, and properties of the various films.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1216-1221
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• 1999

GaN films were deposited on sapphire [$Al_2O_3(0001)$] substrates at relatively low temperature by MOCVD using N-atom source based on a Dielectric Barrier Discharged method. Ammonia gas($NH_3$is commonly used as an N-source to grow GaN films in conventional MOCVD process, and heating to high temperature is required to provide sufficient dissociation of $NH_3$. We used a dielectric barrier discharge method instead of $NH_3$ to grow GaN film relatively low temperature. DBD is a type of discharge, which have at least one dielectric material as a barrier between electrode. DBD is a type of controlled microarc that can be operated at relatively high gas pressure. Crystallinity and surface morphology depend on growth temperature and buffer layer growth. With the DBD-MOCVD method, wurtzite GaN which is dominated by the (0001) reflection was successfully grown on sapphire substrate even at $700^{\circ}C$.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1188-1195
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• 1999

The effect of aluminosilicate sol on the formation of mullite layer in zircon shell mold was investigated. Aluminosilicate sol was prepared by mixing of colloidal silica(NALCO(R) 1130) and an aqueous solution of aluminium nitrate at room temperature. The sol gelled at 50$^{\circ}C$ for 48 hrs. It was identified that the gel consists of aluminosilicate complexes and gibbsite. The coordination number of all aluminium ion bonded with silicon ion was four. Mullite phase formed by sintering above 1300$^{\circ}C$. XRD peak of mullite sharpened with increasing sintering temperature and the content of aluminium nitrate. Mullite phase displayed whisker-like 0.5~5${\mu}m $ particles. Separation between 1st and 3rd layers during sintering and the difference in thermal expansion coefficient between residual silica and mullite.

• 한국해양학회지
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• v.29 no.2
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• pp.95-106
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• 1994

Tidal and wind-driven currents in Chinhae Bay are investigated using a three-dimensional numerical model developed by Kim et al. (1993). The simulations indicate that the flow patterns in the bay are predominated by the bathymetry, wind and river inflow, and the effects of wind on the flow pattern in the inner bay are much stronger than those in the entrance channel. Computed tidal currents coincide with the field measurements. The horizontal and vertical velocities of tidal and residual currents are strong in the entrance channel of the bay, whereas the velocities are relatively weak in the western and northern parts of the bay. Computed velocity fields show the expected phase difference between the velocities in the surface and those in the bottom layer, and these characteristics are more remarkable during the spring tide than the neap tide. The surface currents in the bay depend strongly on the wind and river inflow, and such phenomena are more remarkable during the neap tide than the spring tide.

• Journal of the Korean institute of surface engineering
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• v.40 no.4
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• pp.170-174
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• 2007

High Velocity Oxygen Fuel (HVOF) thermal spray coating of nano size WC-Co powder (nWC-Co) has been studied as one of the most promising candidate for the possible replacement of the traditional hard plating in some area which causes environmental and health problems. nWC-Co powder was coated on Inconel 718 substrates by HVOF technique. The optimal coating process obtained from the best surface properties such as hardness and porosity is the process of oxygen flow rate (FR) 38 FMR, hydrogen FR 57 FMR and feed rate 35 g/min at spray distance 6 inch for both surface temperature $25^{\circ}C\;and\;500^{\circ}C$. In coating process a small portion of hard WC decomposes to less hard $W_2C$, W and C at the temperature higher than its decomposition temperature $1,250^{\circ}C$ resulting in hardness decrease and porosity increase. Friction coefficient increases with increasing coating surface temperature from 0.55-0.64 at $25^{\circ}C$ to 0.65-0.76 at $500^{\circ}C$ due to the increase of adhesion between coating and counter sliding surface. Hardness of nWC-Co is higher or comparable to those of other hard coatings, such as $Al_2O_3,\;Cr,\;Cr_2O_3$ and HVOF Tribaloy 400 (T400). This shows that nWC-Co is recommendable for durability improvement coating on machine components such as high speed spindle.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.232-232
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• 2010

Recently light emitting diodes (LEDs) have been expected as the new generation light sources because of their advantages such as small size, long lifetime and energy-saving. GaN, as a wide band gap material, is widely used as a material of LEDs and GaN nanorods are the one of the most widely investigated nanostructure which has advantages for the light extraction of LEDs and increasing the active area by making the cylindrical core-shell structure. Lately GaN nanorods are fabricated by various techniques, such as selective area growth, vapor-liquid-solid (VLS) technique. But these techniques have some disadvantages. Selective area growth technique is too complicated and expensive to grow the rods. And in the case of VLS technique, GaN nanorods are not vertically aligned well and the metal catalyst may act as the impurity. So we just tried to grow the GaN nanorods on Si substrate without catalyst to get the vertically well aligned nanorods without impurity. First we deposited the AlN buffer layer on Si substrate which shows more vertical growth mode than sapphire substrate. After the buffer growth, we flew trimethylgallium (TMGa) as the III group source and ammonia as the V group source. And during the GaN growth, we kept the ammonia flow stable and periodically changed the flow rate of TMGa to change the growth mode of the nanorods. Finally, as the optimization, we changed the various growth conditions such as the growth temperature, the working pressure, V/III ratio and the doping level. And we are still in the process to reduce the diameter of the nanorods and to extend the length of the nanorods simultaneously. In this study, we focused on the shape changing of GaN nanorods with different growth conditions. So we confirmed the shape of the nanorods by scanning electron microscope (SEM) and carried out the Photoluminescence (PL) measurement and x-ray diffraction (XRD) to examine the crystal quality difference between samples. Detailed results will be discussed.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.18 no.11
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• pp.915-922
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• 2006

Considering heat pipe design principles in fabrication and operational performances, water is one of the most recommended working fluids to make mid to low tempera lure heat pipes. But the conventional water heat pipes might encounter the failure in a cold start-up operation when socked at a chilling temperature lower than the freezing point. If they are subjected to a heat supply for start-up at a temperature around $-20^{\circ}C$, the rate of the vapor flow and the corresponding heat transfer from the evaporator to the condenser is so small that the vapor keeps to stick on the surface of the chilling condenser wall, forming an ice layer, resulting in a liquid deficiency in the evaporator. This kind of problems was resolved by Kang et al. in 2004 by adopting a gas loading heat pipe technology to the conventional water heat pipes. This study was conducted to examine a chilling start-up procedure of gas loading heat pipes by investigating the behaviors of heat pipe wall temperatures. And the thermal resistance of the gas loaded heat pipe that depends on the operating temperatures and heat loads was measured and examined. Two water heat pipes were designed and fabricated for the comparison of performances, one conventional and the other loaded with $N_2$ gas. They were put on start-up test at a heat supply of 30 W after having been socked at an initial temperature around $-20^{\circ}C$. It was observed that the gas loaded one had succeeded in chilling start-up operation.

• YAKHAK HOEJI
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• v.42 no.1
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• pp.59-69
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• 1998

To increase the solubility of quercetin, which is a practically insoluble flavonoid of Ginkgo biloba leaf, the effects of nonaqueous vehicles. Their cosolvents, water-sol uble polymers and modified cyclodextrins (CDs) were observed. Polyethylene glycols, diethyleneglycol monoethyl ether, and their cosolvents with water showed a good solvency toward quercetin. Also the aqueous solutions of povidone, copolyvidone and Cremophor RH 40 was effective in solubilizing quercetin. Complex formation of quercetin with ${\beta}$-cyclodextrin (${\beta}$-CD), dimethyl-${\beta}$-cyclodextiin (DMCD), 2-hydroxypropyl-${\beta}$-cyclodextrin (HPCD) and ${\beta}$-cyclodextrin sulfobutyl ether (SBCD) in water was investigated by solubility method at $37^{\circ}C$. The addition of CDs in water markedly increased the solubility of quercetin with increasing the concentration. AL type phase solubility diagrams were obtained with CDs studied. Solubilizaton efficiency by CDs was in the order of SBCD >> DMCD > HPCD > ${\beta}$-CD. The dissolution rates of quercetin from solid dispersions with copolyvidone, povidone and HPCD were much faster than those of drug alone and corresponding physical mixtures, and exceeded the equilibrium solubility (3.03${\pm}1.72{\mu}$g/ml). The permeation of quercetin through duodenal mucosa did not occur even in the presence of enhancers such as bile salts, but the permeation was observed when the mucus layer was scraped off. This was due to the fact that quercetin had a strong binding to mucin ($58.5{\mu}$g/mg mucin). However rutin was permeable to the duodenal mucosa. The addition of enhancer significantly increased the permeation of rutin in the order of sodium glycocholate.