• 한국정보처리학회논문지
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• 제2권5호
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• pp.619-625
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• 1995

본 연구에서는 역전파(backpropagationlk)학습 알고리즘에 대체될 수 있는 전방향 학습 알고리즘에 준하는 혼합 인식모형을 구성한다. 본 알고리즘은 Nikhil R. Pal (1993)이 제안한 GLVQ(Generalized Learning Vector Quantization)를 이용하여 패턴을 클러스터링 한 다음 비유사성(dissimilarity)을 가진 패턴끼리 재구성(regrouping) 하여 단순 퍼셉트론(simple perceptron)을 이용하여 group별 학습을 한다. 일반적으로 역전파학습인 학습시간이 많이 소요된다는 단점이 있다［1］. 본 알고리즘의 특징으로 는 feed-forward학습이기 때문에 학습시간이 단축될 뿐만 아니라 전체 패턴을 그룹별 로 나누어 학습을 하기 때문에 인식률도 향상 시킬 수 있다. 본 알고리즘에 적용한 데 이타는 250개의 ASCII코드를 16$\times$8격자에 정규화시킨 비트 패턴(bit pattern)을 이용 하였다. 실험결과 250개의 패턴을 10개의 클러스터로 나누어 학습을 시켰을 때 각 클 러스터별 평균반복횟수 94.7회만에 250개의 ASCII코드를 100% 인식할 수 있었다.

• Transactions on Electrical and Electronic Materials
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• 제16권3호
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• pp.124-129
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• 2015

Organic electronics are the domain in which the components and circuits are made of organic materials. This new electronics help to realize electronic and optoelectronic devices on flexible substrates. In recent years, organic materials have replaced conventional semiconductors in many electronic components such as, organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs) and organic photovoltaic (OPVs). It is well known that organic light emitting diodes (OLEDs) have many advantages in comparison with inorganic light-emitting diodes LEDs. These advantages include the low price of manufacturing, large area of electroluminescent display, uniform emission and lower the requirement for power. The aim of this paper is to model polymer LEDs and OLEDs made with small molecules for studying the electrical and optical characteristics. The purpose of this modeling process is, to obtain information about the running of OLEDs, as well as, the injection and charge transport mechanisms. The first simulation structure used in this paper is a mono layer device; typically consisting of the poly (2-methoxy-5(2'-ethyl) hexoxy-phenylenevinylene) (MEH-PPV) polymer sandwiched between an anode with a high work function, usually an indium tin oxide (ITO) substrate, and a cathode with a relatively low work function, such as Al. Electrons will then be injected from the cathode and recombine with electron holes injected from the anode, emitting light. In the second structure, we replaced MEH-PPV by tris (8-hydroxyquinolinato) aluminum (Alq₃). This simulation uses, the Poole-Frenkel -like mobility model and the Langevin bimolecular recombination model as the transport and recombination mechanism. These models are enabled in ATLAS- SILVACO. To optimize OLED performance, we propose to change some parameters in this device, such as doping concentration, thickness and electrode materials.

• 치과방사선
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• 제9권1호
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• pp.25-31
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• 1979

The utilization of x-ray for diagnosis and examination is increasing by about 5-15% every year, therefore, it would be mandatory to protect the patients from exposures and so, studies in this field are performed even now. In dental field, the area of irradiation is limited any to the head and neck area, but the irradiated angle is varied following the objected tooth, so the adjacent structures lens and thyroid gland would be fragile to radiation. And the scattered radiation is one of the complicated problems in the protection because of specificity of dental x-ray and its object structures. The author, by using TLD (Thermo luminescent Dosimeter; Teledyne Isotopes-Model 7300, Element; TLD 200(CaF₂:Dy) and Capintec(Capintec Model 192, PM-30 Diagnostic chamber 28㎖ active volume), tried a measurement of air dose distribution of the scattered radiation and the irradiated dose of lens and thyroid gland under the condition of taking the film on the left maxillary molar. The results were as follows: 1. The half value layer of adapted dental x-ray machine was measured, and is 1.44㎜ Al. 2. The time of irradiation on the left maxillary molar in the Alderson Rando Phantom, the measured doses of left and right lens, and thyroid gland were 8,9mR, 1,2mR and 2,8mR. Under the same conditions, the scattered radiation at the distance of 1 meter from the phantom were 84 μR at the front side, 11μR at the back side, 18μR at the right side and 72μR at the left side. 3. Under the same conditions, the dose showed higher value by about 5% in the presence of object(phantom) than in the case of absence.

• Corrosion Science and Technology
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• 제9권6호
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• pp.259-264
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• 2010

In continuous hot dip galvanizing process, oxide formation on steel surface has an influence on Zn wetting. High strength automotive steel contains high amount of Si and Mn, where Si-Mn composite oxides such as $Mn_2SiO_4$ or $MnSiO_3$ covers the surface after annealing. Zn wetting depends on how the aluminothermia reaction can reduce the Mn-Si composite oxides and then form inhibition layer such as $Fe_2Al_5$ on the steel surface. The outward diffusion of metallic ions such as $Mn^{2+}$, $Si^{2+}$ in the steel matrix is very important factor for the formation of the surface oxides on the steel surface. The surface state and grain boundaries provide an important role for the diffusion and the surface oxide reactions. Some elements such as P, Sb, and B have a strong affinity for the interface precipitation, and it influence the diffusivity of metallic ions on grain boundaries. B oxide forms very rapildly on the steel surface during the annealing, and this promote complex oxides with $SiO_2$ or MnO. P has inter-reacted with other elements on the grain boundaries and influence the diffusion through on them. Small addition of Sb could suppress the decarburization from steel surface and retards the formation of internal and external selective oxides on the steel surface. Interface control by the trace elements such as Sb could be available to improve the Zn wettability during the hot dip galvanizing.

• Nuclear Engineering and Technology
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• 제45권7호
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• pp.847-858
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• 2013

Since 2001, a series of five irradiation test campaigns for atomized U-Mo dispersion fuel rods, KOMO-1, -2, -3, -4, and -5, has been conducted at HANARO (Korea) in order to develop high performance low enriched uranium dispersion fuel for research reactors. The KOMO irradiation tests provided valuable information on the irradiation behavior of U-Mo fuel that results from the distinct fuel design and irradiation conditions of the rod fuel for HANARO. Full size U-Mo dispersion fuel rods of 4-5 $g-U/cm^3$ were irradiated at a maximum linear power of approximately 105 kW/m up to 85% of the initial U-235 depletion burnup without breakaway swelling or fuel cladding failure. Electron probe microanalyses of the irradiated samples showed localized distribution of the silicon that was added in the matrix during fuel fabrication and confirmed its beneficial effect on interaction layer growth during irradiation. The modifications of U-Mo fuel particles by the addition of a ternary alloying element (Ti or Zr), additional protective coatings (silicide or nitride), and the use of larger fuel particles resulted in significantly reduced interaction layers between fuel particles and Al.

• 한국막학회:학술대회논문집
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• 한국막학회 2004년도 Proceedings of the second conference of aseanian membrane society
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• pp.86-89
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• 2004

The present study reports the preparation of a compact ZSM-5 membrane showing high thermal stability and high separation factors, especially n-/i-butane isomers at high temperatures. ZSM-5 membrane was prepared on a porous $\alpha$-Al$_2$O$_3$ tube (an average pore diameter, ca. 100 nm) at 18$0^{\circ}C$ by the seed-assisted crystallization method. The XRD and SEM results showed that a thin zeolite layer (ca. 1 ${\mu}{\textrm}{m}$) was formed on the support surface. The single gas permeances of $N_2$, H$_2$, SF$_{6}$, n-butane, and i-butane were taken at 27$0^{\circ}C$. i-Butane permeance hardly changed after repeated thermal treatments up to 40$0^{\circ}C$, indicating the membrane is thermally stable. On the other hand, other single gas permeances increased when the membrane was further dried at 40$0^{\circ}C$, indicating thermal pretreatment at 27$0^{\circ}C$ could not remove all the adsorbed species in the membrane. i-Butane and SF$_{6}$ permeances were significantly lower than the permeances of smaller molecules, indicating that the membrane has a low concentration of defects. The ideal selectivities at 27$0^{\circ}C$ were 61 for $H_2$/i-butane and 47 for $H_2$/SF$_{6}$. The temperature dependency of n/i-butane ideal selectivities and separation factors for an equimolar n/i-butane mixture was studied. The ideal selectivity showed a maximum of 36 at 30$0^{\circ}C$. The separation factors increased with temperature and reached around 12 at 300-40$0^{\circ}C$, which were much higher than those reported in the literature.ature.

• Transactions on Electrical and Electronic Materials
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• 제3권1호
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• pp.30-37
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• 2002

A focusing grating coupler (FGC) was not fabricated by the 'Continuous Path Control'writing strategy but by an electron-beam lithography system of more general exposure mode, which matches not only the address grid with the grating period but also an integer multiple of the address grid resolution (5 nm). To more simplify the fabrication, we are able to reduce a process step without large decrease of pattern quality by excluding a conducting material or layer such as metal (Al, Cr, Au), which are deposited on top or bottom of an e-beam resist to prevent charge build-up during e-beam exposure. A grating pitch period and an aperture feature size of the FGC designed and fabricated by e-beam lithography and reactive ion etching were ranged over 384.3 nm to 448.2 nm, and 0.5 $\times$ 0.5 mm$^2$area, respectively. This fabrication method presented will reduce processing time and improve the grating quality by means of a consideration of the address grid resolution, grating direction, pitch size and shapes when exposing. Here our investigations concentrate on the design and efficient fabrication results of the FGC for coupling from slab waveguide to a spot in free space.

• 한국세라믹학회지
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• 제37권11호
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• pp.1051-1057
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• 2000

TiO$_2$와 CeO$_2$박막을 Si 위에 증착한 후 MOCVD법에 의해 PbTiO$_3$박막을 증착하여 MFIS 구조를 형성하였다. 절연층의 후열처리가 절연층 및 MFIS 구조의 전기적 특성에 미치는 영향을 관찰하기 위해 산소분위기와 $600^{\circ}C$~90$0^{\circ}C$의 온도범위에서 후 열처리를 행하였고, C-V 특성 및 누설전류 특성을 분석하였다. CeO$_2$와 TiO$_2$박막의 유전상수는 증착 직후 6.9와 15였으며, 90$0^{\circ}C$ 열처리를 행한 후 약 4.9와 8.8로 감소하였다. 누설전류밀도 역시 증착 직후 각각 7$\times$$10^{-5}$ A/$ extrm{cm}^2$와 2.5$\times$$10^{-5}$ A/$\textrm{cm}^2$에서 90$0^{\circ}C$ 열처리를 거친 후에 약 4$\times$$10^{-8}$ A/$\textrm{cm}^2$와 4$\times$$10^{-9}$ A/$\textrm{cm}^2$로 감소하였다. Ellipsometry 시뮬레이션을 통해 계산된 계면층의 두께는 90$0^{\circ}C$에서 약 115$\AA$(CeO$_2$) 및 140$\AA$(TiO$_2$)까지 증가하였다. 계면층은 MFIS 구조에서 강유전층에 인가되는 전계를 감소시켜 항전계를 증가시켰고, charge injection을 방지하여 Al/PbTiO$_3$/CeO$_2$(90$0^{\circ}C$, $O_2$)/Si 구조의 경우 $\pm$2 V~$\pm$10 V의 측정범위에서 memory window가 계속 증가하는 것을 보여주었다.

• 센서학회지
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• 제14권2호
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• pp.96-100
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• 2005

The planar Schottky diodes were fabricated and modeled to probe the device applicability of the cracked GaN epitaxial layer on a (111) silicon substrate. On the unintentionally n-doped GaN grown on silicon, we deposited Ti/Al/Ni/Au as the ohmic metal and Pt as the Schottky metal. The ohmic contact achieved a minimum contact resistivity of $5.51{\times}10.5{\Omega}{\cdot}cm^{2}$ after annealing in an $N_{2}$ ambient at $700^{\circ}C$ for 30 sec. The fabricated Schottky diode exhibited the barrier height of 0.7 eV and the ideality factor was 2.4, which are significantly lower than those parameters of crack free one. But in photoresponse measurement, the diode showed the peak responsivity of 0.097 A/W at 300 nm, the cutoff at 360 nm, and UV/visible rejection ratio of about $10^{2}$. The SPICE(Simulation Program with Integrated Circuit Emphasis) simulation with a proposed model, which was composed with one Pt/GaN diode and three parasitic diodes, showed good agreement with the experiment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.20-20
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• 2007

Nanowire-based field-effect transistors (FETs) decorated with nanoparticles have been greatly paid attention as nonvolatile memory devices of next generation due to their excellent transportation ability of charge carriers in the channel and outstanding capability of charge trapping in the floating gate. In this work, top-gate single ZnO nanowire-based FETs with and without Au nanoparticles were fabricated and their memory effects were characterized. Using thermal evaporation and rapid thermal annealing processes, Au nanoparticles were formed on an $Al_2O_3$ layer which was semi cylindrically coated on a single ZnO nanowire. The family of $I_{DS}-V_{GS}$ curves for the double sweep of the gate voltage at $V_{DS}$ = 1 V was obtained. The device decorated with nanoparticles shows giant hysterisis loops with ${\Delta}V_{th}$ = 2 V, indicating a significant charge storage effect. Note that the hysterisis loops are clockwise which result from the tunneling of the charge carriers from the nanowire into the nanoparticles. On the other hand, the device without nanoparticles shows a negligible countclockwise hysterisis loop which reveals that the influence of oxide trap charges or mobile ions is negligible. Therefore, the charge storage effect mainly comes from the nanoparticles decorated on the nanowire, which obviously demonstrates that the top-gate single ZnO nanowire-based FETs decorated with Au nanoparticles are the good candidate for the application in the nonvolatile memory devices of next generation.