• 제목/요약/키워드: Al layer

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EFFECT OF FLASHING AND UPSETTING PARAMETERS ON THE FLASH BUTT WELDING OF HIGH STRENGTH STEEL

  • Kim, Young-Sub;Kang, Moon-Jin
    • Proceedings of the KWS Conference
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    • 2002.10a
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    • pp.384-389
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    • 2002
  • This study was aimed to evaluate the weldability and optimize the welding conditions for flash butt welding of 780MPa grade steel applied to the automotive bumper reinforcement. And then the relationship between the welding conditions and the joint performance relating specifically to coil-joining steel would be established. The effect of welding conditions between flashing and upsetting process was elucidated. Microstructure observation of the joint indicated that the decarburized band was mainly changed with upsetting process. Width of HAZ was also related to the upsetting conditions rather than the flashing conditions. Generally maximum hardness at HAZ was correlated with $C_{eq}$ of steel and the empirical relationship was obtained to estimate the HAZ properties. Tensile elongation at the joint was usually decreased with increasing the initial clamping distance. Investigation of fracture surface after tensile and bending tests reveal that the origin of cracking at the joint was oxide inclusions composed of $SiO_2$, MnO, $Al_2$ $O_3$, and/or FeO. The amount of inclusions was dependent on the composition ratio of Mn/Si in steel. If this ratio was above 4, the amount of inclusions was low and then the resistance to cracking at the joint was enough to maintain the joint performance. It was obtained that the flashing process influenced the conditions for the energy input to establish uniform or non-uniform molten layer, while the upsetting conditions influenced the joint strength. Heat input variable during flashing process was also discussed with the joint properties.

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Impact of aggressive exposure conditions on sustainable durability, strength development and chloride diffusivity of high performance concrete

  • Al-Bahar, Suad;Husain, A.
    • Structural Monitoring and Maintenance
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    • v.2 no.1
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    • pp.35-48
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    • 2015
  • The main objective of this study is to evaluate the long-term performance of various concrete composites in natural marine environment prevailing in the Gulf region. Durability assessment studies of such nature are usually carried out under aggressive environments that constitute seawater, chloride and sulfate laden soils and wind, and groundwater conditions. These studies are very vital for sustainable development of marine and off shore reinforced concrete structures of industrial design such as petroleum installations. First round of testing and evaluation, which is presented in this paper, were performed by standard tests under laboratory conditions. Laboratory results presented in this paper will be corroborated with test outcome of ongoing three years field exposure conditions. The field study will include different parameters of investigation for high performance concrete including corrosion inhibitors, type of reinforcement, natural and industrial pozzolanic additives, water to cement ratio, water type, cover thickness, curing conditions, and concrete coatings. Like the laboratory specimens, samples in the field will be monitored for corrosion induced deterioration signs and for any signs of failureover initial period ofthree years. In this paper, laboratory results pertaining to microsilica (SF), ground granulated blast furnace slag (GGBS), epoxy coated rebars and calcium nitrite corrosion inhibitor are very conclusive. Results affirmed that the supplementary cementing materials such as GGBS and SF significantly impacted and enhanced concrete resistivity to chloride ions penetration and hence decrease the corrosion activities on steel bars protected by such concretes. As for epoxy coated rebars applications under high chloride laden conditions, results showed great concern to integrity of the epoxy coating layer on the bar and its stability. On the other hand corrosion inhibiting admixtures such as calcium nitrite proved to be more effective when used in combination with the pozzolanic additives such as GGBS and microsilica.

Fabrication and yield improvement of oxide semiconductor thin film gas sensor array (산화물 반도체 박막 가스센서 어레이의 제조 및 수율 개선)

  • 이규정;류광렬;허창우
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.6 no.2
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    • pp.315-322
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    • 2002
  • A thin film oxide semiconductor micro gas sensor array which shows only 60㎽ of power consumption at an operating temperature of 30$0^{\circ}C$ has been fabricated using microfabrication and rnicrornachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double la! or structure of 0.1${\mu}{\textrm}{m}$ thick Si$_3$N$_4$ and 1${\mu}{\textrm}{m}$ thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric-pressure chemical-vapor deposition(APCVD), respectively. The sensor way consists of such thin film oxide semiconductor sensing materials as 1wt.% Pd-doped SnO$_2$, 6wt.% AI$_2$O$_3$-doped ZnO, WO$_3$ and ZnO. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials. Heater Part of the sensor structure has been modified in order to improve the process yield of the sensor, and as a result of modified heater structure improved process yield has been achieved.

Geotechnical Characteristics of Cut Slope in Tertiary Jungja Bain, Ulsan area (울산지역 제3기 정자분지의 도로사면 지반특성)

  • Kim, Seung-Hyun;Koo, Ho-Bon;Lee, Jung-Yup;Rhee, Jong-Hyun;Park, Sung-Kyu;Kim, Kwan-Young
    • Proceedings of the Korean Geotechical Society Conference
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    • 2005.03a
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    • pp.107-112
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    • 2005
  • Road is built continuously along with development of industry and cut slope is happened necessarily in road construction. Geoengineers are executing cut slope stability analysis considering various cut slope condition such as topography, geology, hydraulic condition and so on. The Tertiary Jungja Basin is located in the southeastern coastal area of the Korea Peninsula. Jungja Basin area is created by geotectonic movement of the plate after Early Miocene epoch. The northwestern and southwestern boundary of the basin is fault zone. The Basement rock is hornfels (Ulsan Formation). Basin-fills consist of extrusive volcanic rock(Tangsa Andesites), unconsolidated fluviatile conglomerate(Kangdong Formation) and shallow brackish-water sandstone(Sinhyun Formation). The characteristics of cut slopes in this area is different with cut slopes in the other site. Soil layers in this area is unconsolidated sediments and is not formed the weathering and erosion of the rock. So, the depth of soil layer is very thick. Faults of this area are northwest-southeast and northeast-southwest direction. Expandible clay mineral as smectite, chlorite et al. detected from fault gouge using XRD. Therefore, Jungja Basin area must consider the characteristics of the faults and soil layers thickness necessarily cut slopes stability analysis.

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A Studies on the Electrical and Optical Characterization of Organic Electroluminescent Devices using $Eu(TTA)_3(phen)$ (Europium complex를 이용한 유기 전기 발광 소자의 전기적 및 광학적 특성에 관한 연구)

  • Lee, Myung-Ho;Pyo, Sang-Woo;Lee, Han-Sung;Kim, Young-Kwan;Kim, Jung-Soo
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1373-1376
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    • 1998
  • Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/TPD/$Eu(TTA)_3(phen)/Alq_3/Al$ structures were fabricated by evaporation method, where aromatic diamine(TPD) were used as a hole transporting material, $Eu(TTA)_3(phen)$ as an emitting material, and tris(8-hydroxyquinoline)Aluminum ($Alq_3$) as an electron transporting layer. Electroluminescent(EL) and I-V characteristics of $Eu(TTA)_3(phen)$ with a variety thickness was investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of $Eu(TTA)_3(phen)$. I-V characteristics of this structure show that turn-on voltage was 9V and current density of $0.01A/cm^2$ at a dc drive voltage of 9V. Details on the explanation of electrical transport phenomena of these structures with I-V characteristics using the trapped-charge-limited current model will be discussed.

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Design of 808nm GRIN-SCH Quantum Dot Laser Diode (808nm GRIN-SCH 양자점 레이저 다이오드 설계)

  • Chan, Trevor;Son, Sung-Hun;Kim, Kyoung-Chan;Kim, Tae-Geun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.131-131
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    • 2010
  • The power of semiconductor laser diodes has been limited primarily by the heating effects which occur at high optical intensities. The actual limiting event can take one of a number of forms such as. catastrophic optical damage or filamentation. A general approach to this problem is to design a heterostructure which creates a high powered output while maintaining low internal optical intensities. A graded index separate confinement heterostructure (GRIN-SCH) is one such structure that accomplishes the above task. Here, the active region is sandwiched between graded index layers where the index of refraction increases nearer to the active layer. This structure has been shown to yield a high efficiency due to the confinement of both the optical power and carriers, thereby reducing the optical intensity required to achieve higher powers. The optical confinement also reinforces the optical beam quality against high power effects. Quantum dots have long been a desirable option for laser diodes due to the enhanced optical properties associated with the zeroth dimensionality. In our work, we use PICS3D software created by Crosslight Software Inc. to simulate the performance of In0.67A10.33As/A10.2Ga0.8AsquantumdotsusedwithaGRIN-SCH. The simulation tools are used to optimize the GRIN-SCH structure for high efficiency and optical beam quality.

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STUDY ON THE ENHANCING MICRO-ROUGHNESS OF POROUS SURFACED DENIAL IMPLANT THROUGH ANODIZATION (양극산화처리를 통한 다공성 임플랜트 표면의 표면거칠기 증대에 대한 연구)

  • Yoon, Tae-Ho;Song, Kwang-Yeob
    • The Journal of Korean Academy of Prosthodontics
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    • v.44 no.5
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    • pp.617-627
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    • 2006
  • Statement of problem: HA has been used as a coating material on Ti implants to improve osteoconductivity. However. it is difficult to form uniform HA coatings on implants with complex surface geometries using a plasma spraying technique. Purpose : To determine if Ti6Al4V sintered porous-surfaced implants coated with HA sol-gel coated and hydrothermal treated would accelerate osseointegration. Materials and Methods : Porous implants which were made by electric discharge were used in this study. Implants were anodized and hydrothermal treatment or HA sol-gel coating was performed. Hydrothermal treatment was conducted by high pressure steam at $300^{\circ}C$ for 2 hours using a autoclave. To make a HA sol, triethyl phosphite and calcium nitrate were diluted and dissolved in anhydrous ethanol and mixed. Then anodized implant were spin-coated with the prepared HA sols and heat treated. Samples were soaked in the Hanks solution with pH 7.4 at $37^{\circ}C$ for 6 weeks. The microstructure of the specimens was observed with a scanning electron microscope (SEM), and the composition of the surface layer was analyzed with an energy dispersive spectroscope (EDS). Results : The scanning electron micrographs of HA sol-gel coated and hydrothermal treated surface did not show any significant change in the size or shape of the pores. After immersion in Hanks' solution the precipitated HA crystals covered macro- and micro-pores The precipitated Ca and P increased in Hanks' solution that surface treatment caused increased activity. Conclusion : This study shows that sol-gel coated HA and hydrothermal treatment significantly enhance the rate of HA formation due to the altered surface chemistry.

The Vertical Distribution of Radiative Flux and Heating Rate at King Sejong Station in West Antarctica (남극 세종기지에서 복사 속 및 복사 가열률의 연직 분포)

  • Lee, Kyu-Tae;Lee, Bang-Yong;Lee, Won-Hak;Jee, Joon-Bum;Lee, Min-Kyung
    • Ocean and Polar Research
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    • v.27 no.1
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    • pp.87-95
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    • 2005
  • The vertical profiles of radiative flux and heating rate at King Sejong Station in West Antarctica were calculated with radiative transfe model by Chou and Suarez (1999) and Chou et al (2001). To run this model, the profiles of temperature, mixing ratios of water vapor and ozone at King Sejng Station were derived from ECMWF Reanalysis data. The surface temperature and albedo were also derived from NCEP/NCAR Reanalysis and CERES data. The radiative flux strongly depends on the cloud optical path length that was calculated using the measured W-h data and model by Chou and Lee(1996). Durins the period of $2000{\sim}2001$ (12 and 18 UTC), the correlation coefficient between calculated and measured downward solar fluxes at surface was 0.90 and the coefficient for downward longwave flux was 0.61. The calculated net heating rates of surface layer decreased during the same period, the trend of which was in accordance with the decrease of measured temperature.

Laser patterning process for a-Si:H single junction module fabrication (레이저 가공에 의한 비정질 실리콘 박막 태양전지 모듈 제조)

  • Lee, Hae-Seok;Eo, Young-Joo;Lee, Heon-Min;Lee, Don-Hee
    • 한국신재생에너지학회:학술대회논문집
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    • 2007.11a
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    • pp.281-284
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    • 2007
  • Recently, we have developed p-i-n a-Si:H single junction thin film solar cells with RF (13.56MHz) plasma enhanced chemical vapor deposition (PECVD) system, and also successfully fabricated the mini modules ($>300cm^2$), using the laser patterning technique to form an integrated series connection. The efficiency of a mini module was 7.4% ($Area=305cm^2$, Isc=0.25A, Voc=14.74V, FF=62%). To fabricate large area modules, it is important to optimise the integrated series connection, without damaging the cell. We have newly installed the laser patterning equipment that consists of two different lasers, $SHG-YVO_4$ (${\lambda}=0.532{\mu}m$) and YAG (${\lambda}=1.064{\mu}m$). The mini-modules are formed through several scribed lines such as pattern-l (front TCO), pattern-2 (PV layers) and pattern-3 (BR/back contact). However, in the case of pattern-3, a high-energy part of laser shot damaged the textured surface of the front TCO, so that the resistance between the each cells decreases due to an incomplete isolation. In this study, the re-deposition of SnOx from the front TCO, Zn (BR layer) and Al (back contact) on the sidewalls of pattern-3 scribed lines was observed. Moreover, re-crystallization of a-Si:H layers due to thermal damage by laser patterning was evaluated. These cause an increase of a leakage current, result in a low efficiency of module. To optimize a-Si:H single junction thin film modules, a laser beam profile was changed, and its effect on isolation of scribed lines is discussed in this paper.

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Lamination of Dielectric Layers by High Pressure Spray Coating for LTCC (고압 스프레이 코팅법에 의한 저온동시소성세라믹(LTCC) 유전체 층의 적층방법)

  • Lee, Jee-Hee;Kim, Young-Jin
    • Journal of the Microelectronics and Packaging Society
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    • v.13 no.3 s.40
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    • pp.33-38
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    • 2006
  • Aerosol slurry composed of dielectric materials, distilled water, and deflocculants was sprayed on the substrates, through a high-pressure spray gun as an aerosol. The coated layers were cofired together with $Al_{2}O_{3}$ substrates and green sheets on which the inner connectors were printed. Although the coating rate of coated layers strongly depended on slurry viscosity, spray shape, and the pressure of the spray gun, the coated density was not changed. Buried conductors were maintained as printed by high pressure spray coating method, because the pressing process was not used. At the optimum condition of air controller step 3-4 and slurry viscosity c.p 2000-4000, dense and uniform layers could be achieved. Comparing with conventional lamination process using green sheets, spray coating method enabled thin dielectric layers of $20{\sim}50{\mu}m$.

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