• Proceedings of the IEEK Conference
• /
• 대한전자공학회 1998년도 하계종합학술대회논문집
• /
• pp.395-397
• /
• 1998

NH$_{3}$ gas sensitive ZnO:Al, In thin films were prepared by the heat treatment following continuous deposition of very thin In layer and ZnO:Al layer to obtain the modified surface morphology for good sensitivity. Dependence of the structural electrical and optical properties of them on heat treatment temperature was investigated by x-ray diffraction, SEM, 4-point probe method and spectrophotometer.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 한국표면공학회 2007년도 추계학술대회 논문집
• /
• pp.147-148
• /
• 2007

The compound, Ti3(Al,Si)C2, was synthesized by hot pressing a powder mixture of TiCX, Al and Si. Its oxidation at 900 and 1000 oC in air for up to 50 h resulted in the formation of rutile-TiO2, -Al2O3 and amorphous SiO2. During oxidation, Ti diffused outwards to form the outer TiO2 layer, and oxygen was transported inwards to form the inner mixed layer.

• Journal of Electrochemical Science and Technology
• /
• 제10권4호
• /
• pp.424-432
• /
• 2019

Planar BiVO₄ and 3 wt% Mo-doped BiVO₄ (abbreviated as Mo:BiVO₄) film were prepared by the facile spin-coating method on fluorine doped SnO₂(FTO) substrate in the same precursor solution including the Mo precursor in Mo:BiVO₄ film. After annealing at a high temperature of 450℃ for 30 min to improve crystallinity, the films exhibited the monoclinic crystalline phase and nanoporous architecture. Both films showed no remarkably discrepancy in crystalline or morphological properties. To investigate the effect of surface passivation exploring the Al₂O₃ layer, the ultra-thin Al₂O₃ layer with a thickness of approximately 2 nm was deposited on BiVO₄ film using the atomic layer deposition (ALD) method. No distinct morphological modification was observed for all prepared BiVO₄ and Mo:BiVO₄ films. Only slightly reduced nanopores were observed. Although both samples showed some reduction of light absorption in the visible wavelength after coating of Al₂O₃ layer, the Al₂O₃ coated BiVO₄ (Al₂O₃/BiVO₄) film exhibited enhanced photoelectrochemical performance in 0.5 M Na₂SO₄ solution (pH 6.5), having higher photocurrent density (0.91 mA/㎠ at 1.23 V vs. reversible hydrogen electrode (RHE), briefly abbreviated as V_RHE) than BiVO₄ film (0.12 mA/㎠ at 1.23 V_RHE). Moreover, Al₂O₃ coating on the Mo:BiVO₄ film exhibited more enhanced photocurrent density (1.5 mA/㎠ at 1.23 V_RHE) than the Mo:BiVO₄ film (0.86 mA/㎠ at 1.23 V_RHE). To examine the reasons, capacitance measurement and Mott-Schottky analysis were conducted, revealing that the significant degradation of capacitance value was observed in both BiVO₄ film and Al₂O₃/Mo:BiVO₄ film, probably due to degraded capacitance by surface passivation. Furthermore, the flat-band potential (V_FB) was negatively shifted to about 200 mV while the electronic conductivities were enhanced by Al₂O₃ coating in both samples, contributing to the advancement of PEC performance by ultra-thin Al₂O₃ layer.

• Journal of Welding and Joining
• /
• 제12권4호
• /
• pp.85-101
• /
• 1994

Effect of Cr, Cu and Ni metal powders addition on the alloyed layer of aluminum alloy (AC2B) has been investigated with the plasma transferred arc (PTA) overlaying process. The overlaying conditions were 125-200A in plasma arc current, 150mm/min in process speed and 5-20g/min in powder feeding rate. Main results obtained are summarized as follows: 1) It was made clear that formation of thick surface alloyed layer on aluminum alloy is possible by PTA overlaying process. 2) The range of optimum alloying conditions were much wider in case of Cu and Ni powder additions than the case of Cr powder addition judging from the surface appearance and the bead macrostructure. 3) Alloyed layer with Cu showed almost the homogeneous microstructure through the whole layer by eutectic reaction. alloyed layers with Cr and Ni showed needle-like and agglomerated microstructures, the structure of which has compound layer in upper zone of bead by peritectic and eutectic-peritectic reactions, respectively. 4) Microconstituents of the alloyed layer were analyzed as A1+CrA $l_{7}$ eutectics, C $r_{2}$al sub 11/, CrA $l_{4}$, C $r_{4}$A $l_{9}$ and C $r_{5}$A $l_{*}$ 8/ for Cr addition, Al+CuA $l_{2}$(.theta.) eutectics and .theta. for Cu addition, and Al+NiA $l_{3}$ eutectics. NiA $l_{3}$, N $i_{2}$A $l_{3}$ and NiAl for Ni addition. 5) Concerning defect of the alloyed layer, many blow holes were seen in Cr and Ni additions although there was lesser in Cu addition. Residual gas contents in blow hole for Cu and Ni alloyed layer were confirmed as mainly $H_{2}$ and a littie of $N_{2}$ Cracking was observed in compound zone of the alloyed layer in case of Cr and Ni addition but not in Cu alloyed layer.r.r.

• Corrosion Science and Technology
• /
• 제2권3호
• /
• pp.141-147
• /
• 2003

Sputter-deposited Nb-Al-Cr alloys. $3-5{\mu}m$ thick, have been prepared on quartz substrates as oxidation-and sulfidation-resistant materials at high temperatures. The oxidation or the alloys in the $Ar-O_2$ atmosphere of an oxygen partial pressure of 20 kPa follows approximately the parabolic rate law, thus being diffusion controlled. Their oxidation rates are almost the same as or even lower than those ofthc typical chromia-forming alloys. The multi-lavered oxide scales are formed on the ternary alloys. The outermost layer is composed of $Cr_2O_3$, which is"mainly responsible for the high oxidation'resistance of these alloys. In contrast to sputter-deposited Cr-Nb binary alloys reported previously, the inner layer is not porous. TEM observation as well as EDX analysis indicates that the innermost layer is a mixture of $Al_2O_3$ and niobium oxide. The dispersion of $Al_2O_3$ in niobium oxide may be attributable to the prevention of the formation of the porous oxide layer. The sulfidation rates of the present ternary alloys arc higher than those of the sputter-deposited Nb-AI binary alloys, but still several orders of magnitude lower than those of conventional high temperature alloys. Two-layered sulfide scales are formed, consisting of an outer $Al_2S_3$ layer containing chromium and an inner layer composed of $NbS_2$ and a small amount of $Cr_2S_3$. The presence of $Cr_2S_3$ in the inner protective $NbS_2$ layer may be attributed to the increase in the sulfidation rates.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• 제9권1호
• /
• pp.113-118
• /
• 1999

Aluminum hydrates were synthesized using $AlCl_3$.$6H_2O$as starting material by precipitation method. The phases of obtained powder were amorphous, boehmite, bayerite, nordstrandite depending on the pH of solutions. Aluminum hydrates transformed to $\alpha-Al_2O_3$via $\gamma$- $Al_2O_3$,$\delta$- $Al_2O_3$,and $\theta$-$Al_2O_3$,and particle sizes were grown by increment of heating temperature. The TEX>$\gamma$- $Al_2O_3$ powder was coated on intermediate layer of ceramic membrane by the dip-coating method, and unsupported membrane was also prepared for comparison. The supported layer showed porous structure with small grains, but the unsupported layer revealed interconnected larger grains. Grain growth is dominant in the unsupported layer than in the supported one.

• Proceedings of the Korean Vacuum Society Conference
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.426.1-426.1
• /
• 2014

For high performance thin film solar cells, texturing surface, enhancing the optical absorptionpath, is pretty important. Textured ZnO:Al transparent oxide layer of high haze is commonly used in Si thin film solar cells. In this paper, novel deposition method for aluminum doped zinc oxide (ZnO:Al) on glass substrates is presented to improve the haze property. The broccoli structure of ZnO:Al layer was formed on chemically etched glass substrates, which showed high haze value on a wide wavelength range.The etching condition of the glass substrates can change not only the haze values of the ZnO:Al of in-situ growth but alsothe electrical and optical properties of the deposited ZnO:Al films.The etching mechanism of the glass substrate affecting on the surface morphology of the glass will be discussed, which resulted in variation of texture of ZnO:Al layer. The optical properties of substrate morphology were also analyzed with EDS and FTIR results. As a result, the high haze value of 85.4% was obtained in the wavelength range of 300 nm to 1100 nm. Furthermore, low sheet resistance of about 5~18 ohm/sq was achieved for different surface morphologies of the ZnO:Al films.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• 제40권5호
• /
• pp.974-980
• /
• 2015

Arc thermal spray coating using Al-3%Mg thermal spray wire was carried out to prevent steel from corrosion damage under the marine environment. Post-sealing was applied to Al-3%Mg spray coating treatment using organic/inorganic composite ceramics in order to improve the corrosion resistance of the as-sprayed coating. The results of various electrochemical experiments with sealing treatment indicated that the improvement in corrosion resistance was observed due to low current density in all applied potential range during anodic and cathodic polarization experiments. Futhermore, the natural potential measurement exhibited severe potential fluctuation due to influence of micro-crack presence on the surface of sealed thermal spray coating layer. In addition, the sealed layer was easily eliminated during anodic polarization. Nevertheless, Al-3%Mg spray coating layer improved corrosion resistance by sealing treatment because the sealed coating efficiency was determined to be 92.11%, indicating the exterior environment barrier effect which is based on the Tafel analysis.

• Journal of the Korean Ceramic Society
• /
• 제51권3호
• /
• pp.197-200
• /
• 2014

We investigated the influence of blistering on $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks passivation layers. $Al_2O_3$ film provides outstanding Si surface passivation quality. $Al_2O_3$ film as the rear passivation layer of a p-type Si solar cell is usually stacked with a capping layer, such as $SiO_2$, SiNx, and SiON films. These capping layers protect the thin $Al_2O_3$ layer from an Al electrode during the annealing process. We compared $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks through surface morphology and minority carrier lifetime after annealing processes at $450^{\circ}C$ and $850^{\circ}C$. As a result, the $Al_2O_3$/SiON stacks were observed to produce less blister phenomenon than $Al_2O_3$/SiNx:H stacks. This can be explained by the differences in the H species content. In the process of depositing SiNx film, the rich H species in $NH_3$ source are diffused to the $Al_2O_3$ film. On the other hand, less hydrogen diffusion occurs in SiON film as it contains less H species than SiNx film. This blister phenomenon leads to an increase insurface defect density. Consequently, the $Al_2O_3$/SiON stacks had a higher minority carrier lifetime than the $Al_2O_3$/SiNx:H stacks.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• 제28권3호
• /
• pp.281-288
• /
• 2004

The hybrid composite material (Al/GFRP laminates) are applied to the fuselage and wing in a aircraft. Therefore, Al/GFRP laminates suffer from the cyclic bending moments. This study was to evaluate the effect of fiber stacking angle on the fatigue crack propagation and delamination behavior using the relationship between crack growth rate (da/dN) and stress intensity factor range (ΔK) in Al/GFRP laminates under cyclic bending moment. The variable delamination growth behavior in case of three different type of fiber orientations, i.e., [Al/O$_2$/Al], [Al/+45$_2$/Al] and [Al/90$_2$/Al] at the interface of Al layer and glass fiber layer was measured by ultrasonic C-scan images. As results of this study, It represent that the delamination shape should turns out to have more effective characteristics on the fiber stacking angle. The extension of the delamination zone in case of [Al/+45$_2$/Al] and [Al/90$_2$/Al] were not formed along the fatigue crack profile. The shape of delamination zone depend on fiber stacking angle and the variable type with the delamination contour decreased non-linearly toward the crack tip at the Al layer.