• Korean Journal of Environmental Agriculture
• /
• v.13 no.3
• /
• pp.346-358
• /
• 1994

In this paper, the current knowledge on the formation of acid rain and its effect on vegetation are reviewed. The pollutants which were emitted into the air are oxidized by photochemical reaction and affect the vegetation by dry and wet deposition. Acid rain at pH 4.0 affected sensitive plants and when it was below pH 3.0, visible symptoms developed in most of the crops. The acid rain treatment at pH 2.0 decreased dry weight, leaf area and chlorophyll contents in soybean but it increased rate of photosynthesis and respiration rate. Rain treatment at pH 2.8 increased ethylene production, but it’s not a suitable indicator of sensitivity to acid rain. At pH 2.0 treatment, the contents of soluble Mn and Al were increased but the cultivated soil pH at upper layer(0-5cm) was significantly decreased. The pertubation of glandular trichome which is existed along the vein was developed at all treatment except the control(pH 6.0) and non-treatment. Histological pertubation of spiked trichome and disintegration of chloroplast were developed only on the leaves of sesame treated with SAR(simulated acid rain) of pH 2.0.

• Korean Journal of Materials Research
• /
• v.14 no.7
• /
• pp.494-499
• /
• 2004

The structural, electrical and optical properties of GaN epilayers grown on various ion-implanted sapphire(0001) substrates by MOCVD were investigated. Sapphire substrates have been widely adopted to grow high quality GaN epilayer despite the large differences of lattice constant and thermal expansion coefficient between them. So, GaN or AlN buffer layer and pre-treatment was indispensably introduced before the GaN epilayer growth. The ion-implanted substrate's surface had decreased internal free energies during the growth of the ions implanted sapphire(0001) substrates. The crystal and optical properties of GaN epilayers grown in ions implanted sapphire(0001) substrate were improved. Also, excessively roughened and modified surface by ions degraded the GaN epilyers. Not only the ionic radius but also the chemical species of implanted sapphire(0001) substrates could improve the properties of GaN epilayers grown by MOCVD. This result implies that higher quality of GaN epilayers was achieved by using ion-implanted sapphire(0001) substrate with various ions.

• Korean Journal of Materials Research
• /
• v.19 no.10
• /
• pp.533-537
• /
• 2009

This paper presents a new method for the improvement of color temperature without the change of the driving scheme using transparent dielectric layers with various metal oxides (CeO$_2$, Co$_3$O$_4$, CuO, Fe$_2$O$_3$, MnO$_2$, NiO) in plasma display panels (PDP). In this study, we fabricated ZnO-B$_2$O$_3$-SiO$_2$-Al$_2$O$_3$ glasse with various metal oxides and examined the optical properties of these glasses. As the metal oxides were added to the glasses, the visible transmittances of the dielectric layers decreased and the transmittances in special wavelength regions were reduced at different rates. The change of the transmittance in each wavelength range induced the variation of the visible emission spectra and the change of the color temperature in the PDP. The addition of Co$_3$O$_4$ and CuO slightly decreased the intensity of the blue light, but the intensities of the green and the red light were significantly decreased. Therefore, the color temperature can be improved from 6087K to 7378K and 7057K, respectively.

• Korean Journal of Materials Research
• /
• v.28 no.3
• /
• pp.135-141
• /
• 2018

Stainless steel is being used in various industries such as automobile and aerospace for its cheap manufacturing cost and excellent mechanical properties. However, stainless steel failed to stably protect a specimen with a $Cr_2O_3$ protective layer at temperatures above $1000^{\circ}C$. Thus, improving the high temperature flame resistance of the specimen through additional surface coating was needed. In this study, multilayer coatings of YSZ and $Al_2O_3$ were performed on SUS 304 specimens using pack cementation coatings and thermal plasma spray. The multilayer coated specimen showed enhanced thermal properties due to the coated layers. The microstructures and phase stability are discussed together with flame conditions at $1350^{\circ}C$.

• Korean Journal of Materials Research
• /
• v.28 no.4
• /
• pp.247-253
• /
• 2018

We examined the characteristics of indium tin zinc oxide (ITZO) thin film transistors (TFTs) on polyimide (PI) substrates for next-generation flexible display application. In this study, the ITZO TFT was fabricated and analyzed with a SiOx/SiNx gate insulator deposited using plasma enhanced chemical vapor deposition (PECVD) below $350^{\circ}C$. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) results revealed that the oxygen vacancies and impurities such as H, OH and $H_2O$ increased at ITZO/gate insulator interface. Our study suggests that the hydrogen related impurities existing in the PI and gate insulator were diffused into the channel during the fabrication process. We demonstrate that these impurities and oxygen vacancies in the ITZO channel/gate insulator may cause degradation of the electrical characteristics and bias stability. Therefore, in order to realize high performance oxide TFTs for flexible displays, it is necessary to develop a buffer layer (e.g., $Al_2O_3$) that can sufficiently prevent the diffusion of impurities into the channel.

• Proceedings of the KIEE Conference
• /
• 2011.07a
• /
• pp.1438-1439
• /
• 2011

In this paper, we studied effects on the efficiency, according to thickness of the electron injection layer(EIL) for improving efficiency of Organic Light Emitting Diodes(OLEDs). For the first time, after confirming the optimum thickness of the EIL material $Cs_2CO_3$, we designed OLED devices having a structure of ITO/TPD/$Alq_3/Cs_2CO_3$/Al. And we manufactured devices applying for the optimum thickness of the material in the simulation with thermal evaporating method. And we investigated how the EIL material $Cs_2CO_3$ effects on efficiency of OLEDs in the EIL. As the result, because the EIL material $Cs_2CO_3$ reduces energy potential barrier of the EIL, it facilitated the electron transfer. And, as blocking the hole transfer contributes to an increased recombination, we confirmed that the efficiency of OLEDs increased. And compared to the device without using the EIL material, the device using thickness 1.0 nm of $Cs_2CO_3$ in the EIL shows the excellent efficiency. Therefore, we confirmed that the luminance and the external quantum efficiency increase about 600% and 500% respectively.

• Korean Journal of Materials Research
• /
• v.16 no.3
• /
• pp.173-177
• /
• 2006

Porous surfaced Ti implant compacts were fabricated by electro-discharging-sintering (EDS) of atomized spherical Ti powders. Powders of $50-100{\mu}m$ in diameter were vibratarily settled into a quarts tube and subject to a high voltage and high density current pulse in Ar atmosphere. Single pulse of 0.7 to 2.0 kJ/0.7 gpowder, from 150, 300, and $450{\mu}F$ capacitors was applied in less than $400{\mu}sec$ to produce twelve different porous-surfaced Ti implant compacts. The solid core formed in the center of the compact shows similar microstructure of cp Ti which was annealed and quenched in water. Hardness value at the solid core was much higher than that at the particle interface and particles in the porous layer, which can be attributed to both heat treatment and work hardening effects induced by EDS. Compression tests were made to evaluate the mechanical properties of the EDS compacts. The compressive yield strength was in a range of 12 to 304MPa which significantly depends on input energy. Selected porous-surfaced Ti-6Al-4V dental implant compacts with a solid core have much higher compressive strengths compared to the human teeth and sintered Ti dental implants fabricated by conventional sintering process.

• Journal of Ocean Engineering and Technology
• /
• v.23 no.6
• /
• pp.99-104
• /
• 2009

PTFE has good mechanical and chemical stability at a wide range of temperatures and demonstrates a low friction coefficient value. PTFE is being used for self-lubricating parts in industry. But it shows a high wear rate. Thus, PTFE and nano-diamond powder were mixed into a composite and the wear properties of a PTFE coating layer on Al6061 was investigated. A ball-on-disk type of wear tester was used under a dry condition and different temperatures of oil. After the wear test, the wear track wasexamined by optical microscope. The PTFE-diamond showed the lowest friction coefficient (0.02) of all the lubricants in the experiments. The friction coefficient was shown to be directly related to the diamond powder in the PTFE coating. Adhesion estimations were performed by a scratch test, which is mainly used for coatings. The critical load between the coating and substrate was defined through analyses of the friction load, normal load curve, and acoustic emissions, along with optical microscope observations. The scratch test results showed that an import item (SWISS) gave the highest critical load values.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.11
• /
• pp.956-960
• /
• 2009

The characteristics of organic films can be affected by the temperature of evaporation source because the temperature of evaporation source has an effect on substrate temperature during OLED fabrication process using the thermal evaporation. To investigate the characteristics of OLED devices fabricated by using thermally damaged organic films, I-V-L and half life-time in OLED devices fabricated with various substrate temperatures were measured. During emission layer(EML) evaporation, OLED devices with a structure of ITO(100 nm)/ELM200(50 nm)/NPB(30 nm)/$Alq_3$(55 nm)/LiF(0.7 nm)/Al(100 nm) were fabricated at various substrate temperatures(room temperature, $30^{\circ}C$, $40^{\circ}C$, and $50^{\circ}C$). The characteristics of current density and luminance versus applied voltage in OLED devices fabricated shows that many electrical currents flowed and high brightness appeared at low voltage, but that the lifetime of OLED devices dropped suddenly. This phenomenon explained that the crystallization of $Alq_3$ thin film appeared owing to the substrate heating during evaporation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.12
• /
• pp.1039-1044
• /
• 2009

Red color OLED has been fabricated by the doping method apply to CBP using co-evaporation, GDI4349 of phosphorescent dopant, and rubrene of fluorescent dopant. The OLED structure are multi-layer of ITO(150 nm)/ELM_HIL(50 nm)/ELM_HTL(30 nm)/CBP : Rubrene, GDI4349 (30 nm)/BAlq (30 nm)/LiF(0.7 nm)/Al (100 nm). Accomplished best result at 3 vol.% of rubrene when the OLEDs were made of 1, 3, 5, 7, 9 vol.% doped rubrene. The highest efficiency of 7.2 cd/A was resulted at 8 vol.% of GDI4349 when the OLEDs were made among 5, 8, 11, 14 vol.% of GDI4349. Obviously, the best concentration of rubrene at 3 vol.% and changing GDI4349 concentration to 5, 8, 11, 14 vol.% OLED dramatically enhanced characteristic of resulted 10.7 cd/A at 8 vol.% of GDI4349. This result would understand to analyse as the emission efficiency increases by energy transport efficiency increase using GDI4349 energy transfer when rubrene absorbs the energy from CBP of fluorescences host.