• Journal of the Korean Magnetics Society
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• v.12 no.4
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• pp.127-131
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• 2002

We fabricated MTJ devices that have doubly oxidized tunnel barrier using plasma oxidation method to from oxidized AlO$\sub$x/ tunnel barrier. Doubly oxidation I, which sputtered 10 ${\AA}$-bottom Al layer and oxidized it with oxidation time of 10 s. Subsequent sputtering of 13 ${\AA}$-Al was performed and the metallic layer was oxidized for 50, 80 and 120 s., respectively. Doubly oxidation II, which sputtered 10 ${\AA}$-bottom Al layer and oxidized it varying oxidation time for 30∼120 s. Subsequent sputtering of 13 ${\AA}$-Al was performed and the metallic layer was oxidized for 210 sec. Double oxidation process specimen showed MR ratio of above 27％ in all experiment range. Singly oxidation process. 13 ${\AA}$-Al layer and oxidized up to 210 s, showed less MR ratio and more narrow process window than those of doubly oxidation. Cross-sectional TEM images would that doubly oxidized barrowers were thinner and denser than singly oxidized ones. XPS characterization confirmed that doubly oxidation of Fe with bottom insulating layer. As a result, doubly oxidation could have superior MR ratio in process extent during long oxidation time because of preventing oxidation of bottom magnetic layer than singly oxidation.

• Journal of Welding and Joining
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• v.15 no.5
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• pp.134-143
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• 1997

The formation of thick alloyed layer with high Si content have been investigated on the surface of Al alloy (A5083) plate by PTA process with Si powder. Hardening characteristics and wear resistance of alloyed layer was examined in relation to the microstructure of alloyed layer. Thick hardened layer in mm-order thickness on the surface of A5083 plate can be formed by PTA process with wide range of process condition by using Si powder as alloying element because of eutectic reaction of Al-Si binary alloy. High temperature and rapid solidification rate of molten pool, which are features of PTA process, enable the formation of high Si content alloyed layer with uniform distribution of fine primary Si paticle. High plasma arc current was beneficial to make the alloyed layer with smooth surface appearance in wide range of powder feeding rate, because enough volume of molten pool was necessary make alloyed layer. Uniform dispersion of fine primary Si particle with about 30${\mu}{\textrm}{m}$ in particle size can be obtained in layer with Si content ranging from 30 to 50 mass %. Hardness of alloyed layer increased with increasing Si content, but increasing rate of hardness differed with macrostructure of alloyed layer. Wear resistance of alloyed layer depended on $V_{si}$(volume fraction of primary Si) and was remarkably improved to two times of base metal at 20-30% $V_{si}$ without cracking, but no more improvement was obtained at larger $V_{si}$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.05a
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• pp.32.1-32.1
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• 2006

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.874-878
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• 1994

To increase the anti-oxidation and anti-wear properties of graphite for the propellant-burning environment, SiC, Pt and Al2O3 multi-layer coatings were conducted succesisvely and the optimum condition was researched. The SiC layer was produced by pack cementation and SiC layer in thickness of 30 ${\mu}{\textrm}{m}$ coating was produced after coating for 6 hours. Pt layer was coated by sputtering, and the Al2O3 layer was coated by reactive sputtering. the thickness of Pt layer and Al2O3 layer was less than one-tenth of that of SiC layer. The pack coated specimens and multi-layer coated specimens were made using above conditions and test-fired. The test result showed that the wear rate of SiC layer is approximately 1/10 compared to that of uncoated graphite.

• Journal of Sensor Science and Technology
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• v.16 no.3
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• pp.240-245
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• 2007

AlN thin film for SAW filter application was deposited on (100) silicon, sapphire, $Si_{3}N_{4}$/Si, and $Al_{2}O_{3}$/Si substrates by reactive magnetron sputtering method, respectively. The structural characteristics were dependent on the structure of substrates. Scanning Electron Microscope (SEM), X-ray Diffraction (XRD) and Atomic Force Microscope (AFM) have been used to analyze structural properties and preferred orientation of AlN thin films. Preferred orientation and SAW characteristic of AlN were improved by insertion of $Al_{2}O_{3}$ buffer layer. Insertion loss of SAW devices using AlN/Si and AlN/$Al_{2}O_{3}$/Si were about 33.27 dB and 30.20 dB, respectively.

• Korean Journal of Materials Research
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• v.27 no.10
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• pp.563-568
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• 2017

In this study, the coating of an Al-Cr layer on the surface of a Zircaloy-4 alloy was carried out through plasma pretreatment coating and a laser surface melting process. Two different conditions for laser treatment, severe or minimal surface melting of the Zr alloy substrate, were applied to form the final coating. When there was significant surface melting of the Zr alloy, the solidification microstructure of the newly formed coating layer was mainly composed of needle-shaped $Al_3Zr$, Al(Cr) and $Al_7Cr$ phases. On the other hand, the solidification microstructure of the coating layer was mainly composed of Al(Cr) and $Al_7Cr$ phases when there was minimal surface melting of Zr base in the laser process. However, when the coating was maintained at $1100^{\circ}C$ for 2 hours, significant inter-diffusion occurred between the phases in the coating. As a result, the upper part of the coating layer was observed to mainly consist of $Al_3Zr$ and $Al_8Cr_5$ phases, regardless of the laser treatment conditions.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.87.2-87.2
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• 2012

고출력 반도체 레이저 다이오드는 발진 파장 및 광 출력에 따라 다양한 분야에 응용되고 있으며, 특히 발진파장이 808 nm 및 1470 nm 인 고출력 레이저 다이오드의 경우 재료가공, 펌핑용 광원 (DPSSL, 광섬유 레이저), 의료, 피부미용 (점 제거), 레이저 다이오드 디스플레이 등 가장 다양한 응용분야를 가진 광원 중의 하나라고 할 수 있다. 일례로 재료가공의 경우, 레이저 용접, 레이저 인쇄, 하드디스크의 레이저 텍스쳐링 등 그 응용분야는 무수히 많으며, 최근에는 미래 성장동력 사업의 하나로 중요한 이슈가 되는 태양전지에서 에지 분리 (edge isolation), ID 마킹, 레이저 솔더링 등에서 필수불가결한 광원으로 각광받고 있다. 808 nm 대역 In(Ga)AlAs quantum dots laser diode (QDLD) 성장을 위하여 In(Ga)AlAs QD active 와 In(Ga)AlAs QD LD 성장으로 크게 분류하여 여러 가지 test 실험을 수행하였다. 우선 In(Ga)AlAs QD LD 성장에 앞서 high power LD에 적용 가능한 GaAs/AlGaAs quantum well의 성장 및 전기 측정을 수행하여 그 가능성을 보았다. In(Ga)AlAs QD active layer의 효과적인 실험 조건 조절을 위해 QD layer는 sequential mithod (ex. n x (InGaAlAs t sec + InAs t sec + As 10 sec)를 사용하였다. In(Ga)AlAs QD active layer는 성장 온도, 각 sequence 별 시간, 각 source 양, barrier 두께 조절 및 타입변형, Arsenic flux 등의 조건을 조절하여 실험하였다. 또한 위에서 선택된 몇 가지 active layer 를 이용하여 In(Ga)AlAs QD LD 성장 조건 변화를 시도하였다.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.208-212
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• 2009

The optical characterization of self-assembled InAs/AlAs quantum dots(QD) grown by MBE were investigated using photoreflectance spectroscopy. The intensities of the signals of the GaAs buffer and wetting layer(WL) changed with the width of the WL layer. The PR spectrum for the sample, in which QDs layer were etched off at room temperature, indicated that the broadened signal ranging $1.1{\sim}1.4\;eV$ was originated from InAs QDs and WL. The intensities of signals of GaAs buffer and the WL changed with the WL width. A red shift of the PR peak of WL are observed when the annealing temperatures range from $450^{\circ}C$ to $750^{\circ}C$, which indicates that the interdiffusion between dots and capping layer is caused by improvement in size uniformity of QDs.

• Journal of Korea Foundry Society
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• v.29 no.4
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• pp.169-175
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• 2009

Effect of iron and manganese contents on die soldering reaction has been studied in Al-9wt.%Si-0.3wt.%Mg alloy. Ternary ${\alpha}_{hcp}-Al_8Fe_2Si$ and ${\alpha}_{bcc}-Al_8Fe_2Si$ intermetallic compounds formed by interaction diffusion between Al-Si-Mg system alloy melt and SKD61 die steel surface. Thickness of soldering reaction layer in die steel surface decreased as Fe and Mn contents of the melts increased : When Fe content of Al-9wt.%Si-0.3wt.%Mg melts at constant 0.5wt%Mn content was 0.15wt.%, 0.45wt.% and 0.6wt.%, thickness of soldered layer of each alloy was $64.5{\mu}m,\;57.3{\mu}m$ and $46.9{\mu}m$ respectively. For Mn content of the alloy melts at constant 0.45wt.%Fe content was 0.30wt.%, 0.50wt.% and 0.70wt.%, thickness of soldered layer of each alloy was $66.1{\mu}m,\;57.3{\mu}m$ and $48.3{\mu}m$ respectively.

• Korean Journal of Materials Research
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• v.27 no.7
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• pp.392-397
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• 2017

Fluorine-doped tin oxide (FTO) coated NiCrAl alloy foam is fabricated using ultrasonic spray pyrolysis deposition (USPD). To confirm the influence of the FTO layer on the NiCrAl alloy foam, we investigated the structural, chemical, and morphological properties and chemical resistance by using USPD to adjust the FTO coating time (12, 18, and 24 min). As a result, when an FTO layer was coated for 24 min on NiCrAl alloy foam, it was found to have an enhanced chemical resistance compared to those of the other samples. This improvement in the chemical resistance of using USPD NiAlCr alloy foam can be the result of the existence of an FTO layer, which can act as a protection layer between the NiAlCr alloy foam and the electrolyte and also the result of the increased thickness of the FTO layer, which enhances the diffusion length of the metal ion.