• 한국표면공학회지
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• 제29권2호
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• pp.120-131
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• 1996

In order to improve the mechanical properties and the high temperature oxidation resistance, aluminizing was carried out at a temperature range between $850^{\circ}C$ and $1050^{\circ}C$. The pack cementation process was used to produce uniform layer. After each treatment, the microhardness and the characteristics of high temperature oxidation were tested to evaluate the properties of the aluminide layer. The aluminide layer consisted of FeAl above $1000^{\circ}C$, and $Fe_2Al_5$ below $900^{\circ}C$, and the mixed phase of FeAl and $Fe_2Al_5$ between 90$0^{\circ}C$ and $1000^{\circ}C$ in case of the mixture powder consisted of 5%Al+5%$NH_4Cl+90%AL_2O_3$. The microhardness of $Fe_2Al_5$ was obtained much as the twice as that of FeAl. As the aluminizing temperature and time increased, the thickness of aluminide increased. After aluminizing, the high temperature oxidation resistance was remarkably improved. The high temperature oxidation resistance of FeAl was superior to the resistance of high temperature oxidation of $Fe_2Al_5$.

• 대한금속재료학회지
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• 제50권8호
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• pp.575-582
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• 2012

Medium carbon steel was aluminized by hot dipping into molten Al or Al-1 at% Si baths. After hot-dipping in these baths, a thin Al-rich topcoat and a thick alloy layer rich in $Al_5Fe_2$ formed on the surface. A small amount of FeAl and $Al_3Fe$ was incorporated in the alloy layer. Silicon from the Al-1 at% Si bath was uniformly distributed throughout the entire coating. The hot dipping increased the microhardness of the steel by about 8 times. Heating at $700-1000^{\circ}C$, however, decreased the microhardness through interdiffusion between the coating and the substrate. The oxidation at $700-1000^{\circ}C$ in air formed a thin protective ${\alpha}-Al_2O_3$ layer, which provided good oxidation resistance. Silicon was oxidized to amorphous silica, exhibiting a glassy oxide surface.

• 한국재료학회지
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• 제24권12호
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• pp.645-651
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• 2014

GaN is most commonly used to make LED elements. But, due to differences of the thermal expansion coefficient and lattice mismatch with sapphire, dislocations have occurred at about $109{\sim}1010/cm^2$. Generally, a low temperature GaN buffer layer is used between the GaN layer and the sapphire substrate in order to reduce the dislocation density and improve the characteristics of the thin film, and thus to increase the efficiency of the LED. Further, patterned sapphire substrate (PSS) are applied to improve the light extraction efficiency. In this experiment, using an AlN buffer layer on PSS in place of the GaN buffer layer that is used mainly to improve the properties of the GaN film, light extraction efficiency and overall properties of the thin film are improved at the same time. The AlN buffer layer was deposited by using a sputter and the AlN buffer layer thickness was determined to be 25 nm through XRD analysis after growing the GaN film at $1070^{\circ}C$ on the AlN buffer CPSS (C-plane Patterned Sapphire Substrate, AlN buffer 25 nm, 100 nm, 200 nm, 300 nm). The GaN film layer formed by applying a 2 step epitaxial lateral overgrowth (ELOG) process, and by changing temperatures ($1020{\sim}1070^{\circ}C$) and pressures (85~300 Torr). To confirm the surface morphology, we used SEM, AFM, and optical microscopy. To analyze the properties (dislocation density and crystallinity) of a thin film, we used HR-XRD and Cathodoluminescence.

• 대한금속재료학회지
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• 제50권12호
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• pp.939-948
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• 2012

A 3-ply clad metal consisting of aluminum and copper was fabricated by roll bonding process and the microstructures and mechanical properties of the roll-bonded and post-roll-bonding heat treated Cu/Al/Cu clad metal were investigated. A brittle interfacial reaction layer formed at the Cu/Al interfaces at and above $400^{\circ}C$. The thickness of the reaction layer increased from $12{\mu}m$ at $400^{\circ}C$ to $28{\mu}m$ at $500^{\circ}C$. The stress-strain curves demonstrated that the strength decreased and the ductility increased with heat treatment up to $400^{\circ}C$. The clad metal heat treated at $300^{\circ}C$ with no indication of a reaction layer exhibited an excellent combination of the strength and ductility and no delamination of layers up to final fracture in the tensile testing. Above $400^{\circ}C$, the ductility decreased rasxpidly with little change of strength, reflecting the brittle nature of the intermetallic interlayers. In Cu/Al/Cu clad heat treated above $400^{\circ}C$, periodic parallel cracks perpendicular to the stress axis were observed at the interfacial reaction layer. In-situ optical microscopic observation revealed that cracks were formed in the Cu layer due to the strain concentration in the vicinity of horizontal cracks in the intermetallic layer, promoting the premature fracture of Cu layer. Vertical cracks parallel to the stress axis were also formed at 15% strain at $500^{\circ}C$, leading to the delamination of the Cu and Al layers.

• 한국재료학회지
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• 제33권2호
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• pp.77-86
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• 2023

High-temperature oxidation of a Ni-based superalloy was analyzed with samples taken from gas turbine blades, where the samples were heat-treated and thermally exposed. The effect of Cr/Ti/Al elements in the alloy on high temperature oxidation was investigated using an optical microscope, SEM/EDS, and TEM. A high-Cr/high-Ti oxide layer was formed on the blade surface under the heat-treated state considered to be the initial stage of high-temperature oxidation. In addition, a PFZ (γ' precipitate free zone) accompanied by Cr carbide of Cr₂₃C₆ and high Cr-Co phase as a kind of TCP precipitation was formed under the surface layer. Pits of several ㎛ depth containing high-Al content oxide was observed at the boundary between the oxide layer and PFZ. However, high temperature oxidation formed on the thermally exposed blade surface consisted of the following steps: ① Ti-oxide formation in the center of the oxide layer, ② Cr-oxide formation surrounding the inner oxide layer, and ③ Al-oxide formation in the pits directly under the Cr oxide layer. It is estimated that the Cr content of Ni-based superalloys improves the oxidation resistance of the alloy by forming dense oxide layer, but produced the σ or µ phase of TCP precipitation with the high-Cr component resulting in material brittleness.

• Corrosion Science and Technology
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• 제3권3호
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• pp.98-101
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• 2004

The corrosion behavior of Al-Fe coatings was studied in the wet-seal atmosphere of molten carbonate fuel cells (MCFC). Fe-8Al, Fe-16Al, Fe-25Al, Fe-36Al, and Fe-70Al (in at.%) specimens were tested in Li/K carbonate at $650^{\circ}C$ by a single cell test and an immersion test. In general, the corrosion resistance of the Al-Fe coatings was enhanced due to the formation of a protective $LiAlO_2$ layer. However, when the Al-Fe coatings didn't have sufficient content of aluminum enough for maintaining the protective layer, the corrosion resistance of the Al-Fe coatings was severely degraded by the growth of non-protective scales like $LiAlO_2$. The test results revealed that the aluminum contents in the coatings should be higher than 25 at.% in order to form and maintain the protective $LiAlO_2$ layers.

• ETRI Journal
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• 제27권5호
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• pp.545-550
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• 2005

We have carried out the fabrications of a barrier layer on a polyethersulfon (PES) film and organic light emitting diode (OLED) based on a plastic substrate by means of atomic layer deposition (ALD). Simultaneous deposition of 30 nm $AlO_x$ film on both sides of the PES film gave a water vapor transition rate (WVTR) of $0.062 g/m^2/day (@38^{\circ}C,\;100%\;R.H.)$. Further, the double layer of 200 nm $SiN_x$ film deposited by plasma enhanced chemical vapor deposition (PECVD) and 20 nm $AlO_x$ film by ALD resulted in a WVTR value lower than the detection limit of MOCON. We have investigated the OLED encapsulation performance of the double layer using the OLED structure of ITO / MTDATA (20 nm) / NPD (40 nm) / AlQ (60 nm) / LiF (1 nm) / Al (75 nm) on a plastic substrate. The preliminary life time to reach 91% of the initial luminance $(1300 cd/m^2)$ was 260 hours for the OLED encapsulated with 100 nm of PECVD-deposited $SiN_x$ and 30 nm of ALD-deposited $AlO_x$.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2012년도 춘계학술대회
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• pp.686-689
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• 2012

본 논문에서는 ISE-TCAD를 이용하여 GaN 기반의 LED특성을 분석하였다. LED는 GaN 버퍼층을 기반으로 GaN 장벽과 InGaN 양자우물로 구성된 활성 영역, AlGaN EBL(Electron Blocking Layer)과 AlGaN HBL(Hole Blocking Layer)로 이루어져 있다. Auger 재결합률, 양자 우물의 폭과 수, EBL의 Al 몰분율의 변화에 따른 LED의 출력 전력 특성을 분석하고 효율 개선을 위한 몇 가지 기준을 제시하였다.

• Journal of Information Display
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• 제5권3호
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• pp.30-34
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• 2004

Fabrications of barrier layer on a polyethersulfon (PES) film and OLED based on a plastic substrate by atomic layer deposition (ALD) have been carried out. Simultaneous deposition of 30 nm of $AlO_x$ film on both sides of PES film gave film MOCON value of 0.0615 g/$m^2$/day (@38$^{\circ}C$, 100 % R.H.). Moreover, the double layer of 200 urn $SiN_x$ film deposited by PECVD and 20 nm of $AlO_x$ film by ALD resulted in the MOCON value lower than the detection limit of MOCON. The OLED encapsulation performance of the double layer have been investigated using the OLED structure of ITO/MTDATA(20 nm)/NPD(40 nm)/AlQ(60 nm)/LiF(1 nm)/Al(75 nm) based on the plastic substrate. Preliminary life time to 91 % of initial luminance (1300 cd/$m^2$) was 260 hours for the OLED encapsulated with 100 nm of PECVD deposited $SiN_x$/30 nm of ALD deposited $AlO_x$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.112-115
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• 2004

Photovoltaic effects in $CuPc/C_{60}$ heterojunction structure have been studied depending on thickness of exciton blocking layer(BCP) and electrodes. Bare ITO and polymer coated electrode(PEDOT:PSS) were used as an anode, and Al, Ca/Al, Mg/Al, LiF/Al, and LiAl were used as a cathode. Photovoltaic parameters depending on BCP layer thickness from 0 to 60 nm and electrodes having different work function were measured using Keithley 236 source-measure unit and a 500W xenon lamp (ORIEL 66021). We have seen that the BCP layer thickness severely affects on the performance of photovoltaic cells.