• 한국분말재료학회지
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• 제5권3호
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• pp.210-219
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• 1998

The W-Cu composite powders were synthesized from W and Cu elemental powders by ball-milling process, and their microstructural changes and sintering behaviors were evaluated. The ball milling process was carried out in a 3-dimensional mixer (Turbula mixer) using zirconic ($ZrO_2$) ball and alumina ($Al_2O_3$) vial up to 300 hrs. The ball-milled W-Cu powders revealed nearly spherical shape. Microstructure of the composite powders showed onion-like structure which consists of W and Cu shells due to the moving characteristic of Turbula mixer. The W and Cu elements in the composite powders milled for 300 hrs were homogeneously distributed, and W grain size in the ball-milled powder was smaller than 0.5 $\mu\textrm{m}$. Fe impurity introduced during ball milling process was very low as of 0.001 wt%. The relative sintered density of ball-milled W-Cu specimens reached about 94% after sintering at $1100^{\circ}C$.

• 태양에너지
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• 제19권1호
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• pp.29-36
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• 1999

ZnO/n-Si junctions were fabricated by spin coating with ZnO precursor produced by the sol-gel process. In order to increase the electrical conductivity of ZnO films, the films were n-doped with Al impurity and subsequently annealed at about $450^{\circ}C$ under reducing environments. The ohmic contacts between n-Si and AI for a bottom electrode were successfully fabricated by doping the rear surface of Si substrate with phosphorous atoms. The front surface of the substrate was also doped with phosphorous atoms for improving the efficiency of the solar cells. Consequently, conversion efficiencies ranging up to about 5.3% were obtained. These efficiencies were found to decrease slowly with time because of the oxide films formed at the ZnO/Si interface upon oxygen penetration through the porous ZnO. Oxygen barrier layers could be necessary in order to prevent the reduction of conversion efficiencies.

• 한국세라믹학회지
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• 제27권6호
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• pp.747-754
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• 1990

Aluminum hydrate gels were prepared from the mixtures of bauxite and ammonium sulfate by wet acid process. Optimum conditions for obtaining the maximum yield( 99%) of aluminum hydrates from the same amount of bauxite were confirmed as follows ; 1. Mixing ratio ; addition of 25mole% of ammonium sulfate to 1mole of bauxite. 2. Calcination ; heated at 350℃ for 1hr. 3. Extraction ; leached at 95℃ in 1% H2SO4 for 90min. 4. pH of precipitating solution; slight below 7.0. Amorphous aluminum hydrates were precipitated at the pH lower than 8.5, but the precipitates crystallized to bayerite at the pH was 10. Mean diameter of α-Al2O3 powders which were obtained by calcining the aluminum hydrates was below 0.2㎛, and EDS analysis revealed than SiO2 was it's primary impurity.

• Bulletin of the Korean Chemical Society
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• 제22권2호
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• pp.159-163
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• 2001

Si3N4 powder has been analyzed by inductively coupled plasma atomic emission spectrometry (ICP-AES). The sample was dissolved by high-pressure acid digestion with HF, H2SO4 (1+1), and HNO3 mix ture. This technique is well suited for the impurity analysis of Si3N4 because the matrix interference is eliminated. A round-robin samples trace elements, such as Ca, W, Co, Al, Fe, Mg, and Na, were determined. For the direct analysis, slurry nebulization of 0.96 mm Si3N4 powder also has been studied by ICP-AES. Emission intensities of Fe were measured as ICP operational conditions were changed. Significant signal difference between slurry particles and aqueous solution was observed in the present experiment. Analytical results of slurry injection and high-pressure acid digestion were compared. For the use of aqueous standard solution for calibration, k-factor was determined to be 1.71 for further application.

• 대한전자공학회논문지
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• 제22권3호
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• pp.95-102
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• 1985

반도체 내에서의 불순물 분포를 구하기 위한 2차원 확산문제를 푸는 효과적인 수치 해법을 제시하였다. ADI(Alternating Direction Implicit) 방법과 Gauss 소거법의 조합에 의한 수치해법을 사용하므로써 SOR(Successive Over-Relaxation)이나 stone 방법에 비하여 전산기의 메모리 사용량을 중가시키지 않 고도 거의 모든 확산 조건에 대하여 CP비시간을 1/3 이하로 줄일 수 있었다. 상대오차의 크기를 0.01%이내로 하고 1차원과 2차원 문제에 대하여, 여러가지 수치해법의 CPU를 비교하였다. 1차원 계산결과와 실험결과가 잘 일치하였고, 2차원 계산결과를 1차원 계산결과와 잘 비교한 결과, 일치함을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.232-232
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• 2010

Recently light emitting diodes (LEDs) have been expected as the new generation light sources because of their advantages such as small size, long lifetime and energy-saving. GaN, as a wide band gap material, is widely used as a material of LEDs and GaN nanorods are the one of the most widely investigated nanostructure which has advantages for the light extraction of LEDs and increasing the active area by making the cylindrical core-shell structure. Lately GaN nanorods are fabricated by various techniques, such as selective area growth, vapor-liquid-solid (VLS) technique. But these techniques have some disadvantages. Selective area growth technique is too complicated and expensive to grow the rods. And in the case of VLS technique, GaN nanorods are not vertically aligned well and the metal catalyst may act as the impurity. So we just tried to grow the GaN nanorods on Si substrate without catalyst to get the vertically well aligned nanorods without impurity. First we deposited the AlN buffer layer on Si substrate which shows more vertical growth mode than sapphire substrate. After the buffer growth, we flew trimethylgallium (TMGa) as the III group source and ammonia as the V group source. And during the GaN growth, we kept the ammonia flow stable and periodically changed the flow rate of TMGa to change the growth mode of the nanorods. Finally, as the optimization, we changed the various growth conditions such as the growth temperature, the working pressure, V/III ratio and the doping level. And we are still in the process to reduce the diameter of the nanorods and to extend the length of the nanorods simultaneously. In this study, we focused on the shape changing of GaN nanorods with different growth conditions. So we confirmed the shape of the nanorods by scanning electron microscope (SEM) and carried out the Photoluminescence (PL) measurement and x-ray diffraction (XRD) to examine the crystal quality difference between samples. Detailed results will be discussed.

• 대한금속재료학회지
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• 제50권9호
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• pp.659-667
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• 2012

Alloy 617 is a Ni-base superalloy and a candidate material for the intermediate heat exchanger (IHX) of a very high temperature gas reactor (VHTR) which is one of the next generation nuclear reactors under development. The high operating temperature of VHTR enables various applications such as mass production of hydrogen with high energy efficiency. Alloy 617 has good creep resistance and phase stability at high temperatures in an air environment. However, it was reported that the mechanical properties decreased at a high temperature in an impure helium environment. In this study, high-temperature corrosion tests were carried out at $850^{\circ}C-950^{\circ}C$ in a helium environment containing the impurity gases $H_2$, CO, and $CH_4$, in order to examine the corrosion behavior of Alloy 617. Until 250 h, Alloy 617 specimens showed a parabolic oxidation behavior at all temperatures. The activation energy for oxidation in helium environment was 154 kJ/mol. The SEM and EDS results elucidated a Cr-rich surface oxide layer, Al-rich internal oxides and depletion of grain boundary carbides. The thickness and depths of degraded layers also showed a parabolic relationship with time. A normal grain growth was observed in the Cr-rich surface oxide layer. When corrosion tests were conducted in a pure helium environment, the oxidation was suppressed drastically. It was elucidated that minor impurity gases in the helium would have detrimental effects on the high-temperature corrosion behavior of Alloy 617 for the VHTR application.

• 한국결정성장학회지
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• 제4권1호
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• pp.11-20
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• 1994

분자선에피택시(molecular beam epitaxy)법을 이용하여 GaAs 및 ALGaAs layer를 undoped 반절연(100) GaAs 기판위에 성장하였고, 최적의 성장온도와 성장된 시료에 대한 전기적 및 광학적 특성을 조사 하였다. Undoped GaAs층의 성장에 있어서는 측정결과로 부터 As/Ga의유속비가 약 20, 성장온도가 $570^{\circ}C$일때 12K에서의 Photoluminescence 반폭치(FWHM)가 1.14meV인 결정성이 좋은 시료가 얻어졌으며, p형으로서 carrier 농도가 $1.5{\times}10^{14}cm^{-3}$ 미만이고, Hall 이동도가 300K에서 $579cm^2/V-s$인 양질의 에피층이 얻어졌다. 또한 이들 시료에서는 ODLTS, DLTS측정으로 부터 2개의 hole형 깊은 주위만이 관측되었다. Undoped AlGaAs층의 성장에 있어서는 As/(Ga+Al)의 유속비가 20이고 $60^{\circ}C$의 성장온도에서 표면 morphology와 결정성이 좋은 시료를 성장할 수 있었으며, 0.17~0.85eV에서 8개의 깊은 준위가 관측되엇다. Si이 도핑된 AlGaAs 층의 경우, PL 스펙트럼으로 부터 Si의 도핑효과를 관측할 수 있었으며, Hall 측정으로부터 300K에서 $1.5{\times}10^{16}cm^{-3}$일 때 Hall 이동도가 $2547cm^2/V-s$인 시료를 얻을 수 있었다.

• 한국재료학회지
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• 제21권10호
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• pp.573-579
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• 2011

Highly textured Ag, Al and Al:Si back reflectors for flexible n-i-p silicon thin-film solar cells were prepared on 100-${\mu}m$-thick stainless steel substrates by DC magnetron sputtering and the influence of their surface textures on the light-scattering properties were investigated. The surface texture of the metal back reflectors was influenced by the increased grain size and by the bimodal distribution that arose due to the abnormal grain growth at elevated deposition temperatures. This can be explained by the structure zone model (SZM). With an increase in the deposition temperatures from room temperature to $500^{\circ}C$, the surface roughness of the Al:Si films increased from 11 nm to 95 nm, whereas that of the pure Ag films increased from 6 nm to 47 nm at the same deposition temperature. Although Al:Si back reflectors with larger surface feature dimensions than pure Ag can be fabricated at lower deposition temperatures due to the lower melting point and the Si impurity drag effect, they show poor total and diffuse reflectance, resulting from the low reflectivity and reflection loss on the textured surface. For a further improvement of the light-trapping efficiency in solar cells, a new type of back reflector consisting of Ag/Al:Si bilayer is suggested. The surface morphology and reflectance of this reflector are closely dependent on the Al:Si bottom layer and the Ag top layer. The relationship between the surface topography and the light-scattering properties of the bilayer back reflectors is also reported in this paper.

• 한국세라믹학회지
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• 제26권5호
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• pp.705-711
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• 1989

The glass-ceramics was prepared with the scoria(CaO-MgO-Al2O3-SiO2 system) of the locally occurring volcanic ejecta containing 10-13w/o of (FeO＋Fe2O3) by melting at 140$0^{\circ}C$ for 4 hours and thermally treated for nucleation and crystallization. The sucrose was added to the scoria to adjust the Fe2+/Fe3+ ratio during the melting process. The addition of 1-2w/o of sucrose showed the glass-ceramics body with the finest particle developed and dispersed over the entire range. It is concluded that the impurity content of iron oxide and titanium oxide play the most-influencial effect on the crystallization. When 1-2w/o of sucrose was added to the scoria, the value of Fe2+/Fe3+ ratio was 0.93-1.32 and showed the best result of crystallization. The nucleation temperature and time were calculated by the measurements of exothermic peak temperatures of DTA for quenched and thermally treated glasses. The nucleation temperature of scoria glass without the addition of sucrose was estimated as 75$0^{\circ}C$, but the addition of sucrose by 2w/o showed the nucleation temperature 6$25^{\circ}C$. The nucleation time was calculated with the same DTA curves. The nucleation times estimated were about 150min. for both of glasses without and with sucrose added. Finally, the activation energies for crystallization were calculated with the DTA data. The calculated activation energies were 143 Kcal/mole for the glass without addition of sucrose and 90Kcal/mole, 87Kcal/mole, 85Kcal/mole and 71Kcal/mole for the glasses of 1w/o, 2w/o, 3w/o and 4w/o addition respectively.