• 한국진공학회지
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• 제9권3호
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• pp.237-241
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• 2000

TFT-LCD(thin film transistor-liquid crystal display) 패널의 데이터 배선 재료로 사용하기 위하여 AlNd(2 wt%)의 Al합금 박막을 dc 마그네트론 스퍼터링 방법으로 유리 기판에 증착하여 열처리전과 열처리후의 구조적, 전기적, 식각 박막 특성을 조사하였다. 또한 증착한 박막을 식각하여 그 특성을 조사하였고, ITO를 증착하여 AlNd과의 접촉 저항을 Kelvin resistor를 사용하여 측정하였다. 증착된 박막을 $350^{\circ}C$에서 20분간 열처리 하였을때 AlW박막은 비저항이 감소하였고 약 $4\;{\mu\Omega}cm$의 아주 좋은 비저항 특성을 보였다. 주사전자 현미경(SEM)과 원자힘현미경(AFM)으로 표면을 분석한 결과 좋은 힐록방지 특성을 보임을 알 수 있었다. AlNd의 식각 특성은 아주 좋게 나타났고, ITO와 AlNd의 최저 접촉저항값은 약 $110\;{\mu\Omega}cm$이었다. 측정된 특성들을 바탕으로 AlNd(2 wt.%) 박막의 적용 가능성을 해상도와 화면 크기 측면에서 살펴보았을 때, 25인치 SXGA급 패널에 적용 가능함을 알 수 있었다.

• Journal of the Optical Society of Korea
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• 제1권1호
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• pp.44-47
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• 1997

The integration of a GaAs/AlGaAs multi-quantum well electroabsorption modulator and a tapered waveguide vertical direction optical interconnect has been performed without the complicated regrowth process. Zn impurity-induced layer disordering of MQW layer is used to achieve the energy transfer between SQW and MQW regions. Light coupled into a SQW region was transferred to an MQW region and an intensity modulation of 10 dB extinction ratio was demonstrated.

• 한국재료학회지
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• 제26권8호
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• pp.430-437
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• 2016

Aluminum oxide ($Al_2O_3$) thin films were grown by atomic layer deposition (ALD) using a new Al metalorganic precursor, dimethyl aluminum sec-butoxide ($C_{12}H_{30}Al_2O_2$), and water vapor ($H_2O$) as the reactant at deposition temperatures ranging from 150 to $300^{\circ}C$. The ALD process showed typical self-limited film growth with precursor and reactant pulsing time at $250^{\circ}C$; the growth rate was 0.095 nm/cycle, with no incubation cycle. This is relatively lower and more controllable than the growth rate in the typical $ALD-Al_2O_3$ process, which uses trimethyl aluminum (TMA) and shows a growth rate of 0.11 nm/cycle. The as-deposited $ALD-Al_2O_3$ film was amorphous; X-ray diffraction and transmission electron microscopy confirmed that its amorphous state was maintained even after annealing at $1000^{\circ}C$. The refractive index of the $ALD-Al_2O_3$ films ranged from 1.45 to 1.67; these values were dependent on the deposition temperature. X-ray photoelectron spectroscopy showed that the $ALD-Al_2O_3$ films deposited at $250^{\circ}C$ were stoichiometric, with no carbon impurity. The step coverage of the $ALD-Al_2O_3$ film was perfect, at approximately 100%, at the dual trench structure, with an aspect ratio of approximately 6.3 (top opening size of 40 nm). With capacitance-voltage measurements of the $Al/ALD-Al_2O_3/p-Si$ structure, the dielectric constant of the $ALD-Al_2O_3$ films deposited at $250^{\circ}C$ was determined to be ~8.1, with a leakage current density on the order of $10^{-8}A/cm^2$ at 1 V.

• 한국세라믹학회지
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• 제35권1호
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• pp.23-32
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• 1998

전융실리카 분말로 소결하여 만든 sihca preform을 마그네슘이 함유된 용융 알루미늄에 침적시킨후 공기중에서 반응시켜 Al2O3/Al 복합체를 제조하였다. 복합체 제조시 반응온도의 변화에 대해 용융 알루미늄의 침투거동을 조사한 결과 3가지 영역, 즉 저온영역(75$0^{\circ}C$-85$0^{\circ}C$), 중온영역(90$0^{\circ}C$-95$0^{\circ}C$), 고온영역(100$0^{\circ}C$$\leq$)으로 구분되었다. 저온영역에서는 반응온도에 비례해서 침투속도가 증가하였으나, 중간온도 영역은 치환반응에 의해 생성된 알루미나의 상전이에 따른 영향으로 저온영역인 85$0^{\circ}C$에서보다 오히려 침투속도가 감소하였다. 고온영역중 100$0^{\circ}C$이상에서 침투가 일어나지 않는 것은 용융 알루미늄중의 마그네슘이 먼저 실리카와 반응하여 silica preform의 표면에 치밀한 스피넬층을 형성하기 때문으로 판명되었다.

• Journal of the Korean Physical Society
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• 제73권10호
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• pp.1555-1560
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• 2018

$AlFe_2B_2$ produced by using a conventional arc melter has a ferromagnetic material with a Curie temperature ($T_C$) of around 300 K, but the arc-melt generates paramagnetic $Al_{13}Fe_4$ impurities during the synthesis of $AlFe_2B_2$. Impurities are brought to cause a decrease in magnetocaloric effects (MCEs). To investigate the effects of $Al_{13}Fe_4$ impurities on MCEs, we prepared and compared ascast and acid-treated samples, where the acid treatment was performed to remove the $Al_{13}Fe_4$ impurities. For the structural analysis, powder X-ray diffraction was carried out, and the measured data were subjected to a Rietveld refinement. The presence of $Al_{13}Fe_4$ impurities in the as-cast sample was observed in the phase analysis measurements. Magnetic properties were investigated by using Superconducting Quantum Interference Device (SQUID) measurements for the as-cast and the acid-treated $AlFe_2B_2$ samples. From isothermal magnetization measurements, Arrott plots were obtained showing that the transition of $AlFe_2B_2$ has a second-order magnetic phase transition (SOMT). The $T_C$ and the saturation magnetization increased for the acid-treated sample due to removal of the paramagnetic impurities. As a consequence, the magnetic entropy change ($-{\Delta}S$) increased in the pure $AlFe_2B_2$ samples, but the full width at half maximum in the plot of $-{\Delta}S$ vs. T decreased due to the absence of impurities.

• 대한전자공학회논문지
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• 제14권1호
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• pp.5-14
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• 1977

공기중의 열처리에 의하여 상온에서 낮은 저항을 갖는 PTC 써미스터를 제작했다. 재현성을 높이기 위해 BaTiO3에 Al2O3, SiO2 및 TiO2를 첨가 했으며, 불순물로서 Sb2O3를 첨가했다. 시편은 공기 중에서 1,200℃∼1,380℃로서 가열되었으며, Sb2O3첨가량에 대한 저항관계를 조사했다. 이 시편들은 공기중의 열처리에서도 재현성이 좋았다. 연구된 시편은 3.75mole% Al2O3, 1.25mole% SiO2, 2.25mole% TiO2 및 0.16∼0.25wt% Sb2O3를 BaTiO3에 첨가하여 만들었으며 저항값은 14∼300ohm이었다.

• 한국세라믹학회지
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• 제53권4호
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• pp.463-467
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• 2016

$Si^{4+}-N^{3-}$ was incorporated into $Ce^{3+}-doped$ lutetium aluminum garnet ($Lu_{2.965}Ce_{0.035}Al_5O_{12}$, $LuAG:Ce^{3+}$) lattices, resulting in the formation of $Lu_{2.965}Ce_{0.035}Al_{5-x}Si_xO_{12-x}N_x$ [(Lu,Ce)AG:xSN]. For x = 0-0.25, the synthesized powders consisted of the LuAG single phase, and the lattice constant decreased owing to the smaller $Si^{4+}$ ions. However, for x > 0.25, a small amount of unknown impurity phases was observed, and the lattice constant increased. Under 450 nm excitation, the PL spectrum of $LuAG:Ce^{3+}$ exhibited the green band, peaking at 505 nm. The incorporation of $Si^{4+}-N^{3-}$ into the $Al^{3+}-O^{2-}$ sites of $LuAG:Ce^{3+}$ led to a red-shift of the emission peak wavelength from 505 to 570 nm with increasing x. Corresponding CIE chromaticity coordinates varied from the green to yellow regions. These behaviors were discussed based on the modification of the $5d^1$ split levels and crystal field surroundings of $Ce^{3+}$, which arose from the Ce-(O,N)8 bonds.

• Korean Chemical Engineering Research
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• 제52권3호
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• pp.340-346
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• 2014

Continuous and dense ZIF-7 membranes were successfully synthesized on ${\alpha}-Al_2O_3$ porous substrate via two-step crystallization technique. ZIF-7 seeding layer was first deposited on porous ${\alpha}-Al_2O_3$ substrate by in-situ low temperature crystallization, and then ZIF-7 membrane layer can be grown through the secondary high-temperature crystallization. Two synthesis solutions with different concentration were used to prepare ZIF-7 seeding layer and membrane layer on porous ${\alpha}-Al_2O_3$ substrate, respectively. As a result, a continuous and defect-free ZIF-7 membrane layer can be prepared on porous ${\alpha}-Al_2O_3$ substrate, as confirmed by scanning electron microscope. XRD characterization shows that the resulting membrane layer is composed of pure ZIF-7 phase without any impurity. A single gas permeation test of $H_2$, $O_2$, $CH_4$ or $CO_2$ was conducted based on our prepared ZIF-7 membrane. The ZIF-7 membrane exhibited excellent H2 molecular sieving properties due to its suitable pore aperture and defect-free membrane layer.

• Nuclear Engineering and Technology
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• 제24권2호
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• pp.163-167
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• 1992

고순도알루미늄중 불순물의 Parameter로 이용될수 있는 구리의 비파괴 방사화분석법의 고찰 및 23종의 극미량불순성분원소의 함량을 분석하였다. 즉 구리의 분석은 원자로의 속중성자에 의한 27Al(n,$\alpha$)24Na반응으로 생성되는 24Na의 방사능을 감소시키기 위하여 Thermal Column을 이용하였고 다른 조사공을 이용한 경우보다 약 100 배 정 도 방해 요인을 감소시킬 수 있었다. 24Na 에 의한 영향은 2-3 %범위 이하이었다. 이 방법에 의해 표준알루미늄(6 nine class)시료로부터 구리를 정량하였고 아울러 기타 불순원소들을 일상 방사화분석법에 의해 정량하였다. 구리의 함량은 0.54$\pm$0.08 ppm이었다. 이러한 결과는 문헌값과 비교할때 타당성이 있었고 일상분석에 이용할 수 있는 좋은 방법으로 여겨진다.

• 열처리공학회지
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• 제9권3호
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• pp.161-168
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• 1996

The purpose of this study is to investigate the effect of impurity level and fabrication processes on the strength, fracture toughness and fatigue resistance of 7075, 7050 and 7175 high strength aluminum forgings. It has been verified that plane strain fracture toughness and fatigue characteristics of a specially processed 7175S-T74 alloy is superior to a conventionally processed 7075-T6/T73, 7050-T74 and 7175-T74 alloys. These beneficial effects primarily arise from two view points, i.e., the effect of reducing the impurity level of iron and silicon has significantly diminished the size and volume fraction of second phase particles such as $Al_7Cu_2Fe$ and $Mg_2Si$. Futher reduction of the amount of nonequilibrium second phase particles has been observed by applying a special fabrication process.