• 한국초전도학회:학술대회논문집
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• 2008.08a
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• pp.41-41
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• 2008

• Resources Recycling
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• v.18 no.6
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• pp.38-45
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• 2009

Dissolution characteristics of magnesite ore in hydrochloric acid solution and removal of impurity were investigated. The dissolution yield increased with increasing temperature and with decreasing particle size. The optimum conditions for dissolution were found to be reaction period of 120 min, reaction temperature of $80^{\circ}C$ and mean particle size of 100. Under optimal dissolution condition the extraction of Mg was 98%. It was found that most of Si and Al exist in the residue, and they can be removed by filtering. Dissolved impurity ions were precipitated as metal hydroxides by pH adjustment. Polymers were used as coagulants for metal hydroxides and the suitable coagulant dosage was 1mg/100ml of non-ionic polymer.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.526-531
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• 1998

A hydride vapor phase epitaxy (HVPE) method was performed to grow the $10~240\mu{m}$ thick GaN films on (111) spinel $MgAl_2O_4$ substrate. The GaN films on $MgAl_2O_4$ substrate revealed a photoluminescence (PL) characteristics of the impurity doped GaN by the out-diffusion and auto-doping of Mg from $MgAl_2O_4$ substrate during GaN growth. The PL spectrum measured at 10K consists of free and bound excitons related recombination transitions and impurity-related donor-acceptor pair recombination and its phonon replicas. However, the deep-level related yellow band emission was not observed. The peak energy of neutral donor bound excitonic emission and the frequency of Raman $E_2$ mode were exponentially decreased with increasing the GaN thicknesses. and the frequency of E, Raman mode was shifted with the relation of $\Delta$$\omega$=3.93$\sigma$($cm^{-1}$/GPa), where l1 (GPa) is the residual strain in the GaN epilayers.

• Journal of Korea Foundry Society
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• v.25 no.3
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• pp.128-133
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• 2005

The effects of Mn and Cr on the crystallization behaviors of Fe-bearing intennetallics in A356 alloy were studied. Coarse and acicular ${\beta}-Al_{5}$FeSi phase in A356-0.20wt.%Fe alloy was modified into small ${\alpha}$-Al(Fe,Mn)Si and ${\alpha}$-Al(Fe,Cr)Si phases in response to Mn and Cr addition, respectively. Increasing of Mn addition amount elevates the crystallizing temperature of ${\alpha}$-Al(Fe,Mn)Si and the Mn/Fe ratio in the ${\alpha}$-Al(Fe,Mn)Si. Cr is more effective to modify ${\beta}-Al_{5}$FeSi in comparison with Mn. ${\alpha}$-Al(Fe,Mn)Si phase had BCC/SC dual structure.

• Analytical Science and Technology
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• v.21 no.4
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• pp.332-337
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• 2008

Purification of silica mineral was compared with various leaching methods such as shaking, stirring, ultrasonic with 2.5% HF/HCl solution. Among them, ultrasonic method showed a best leaching effect. From the leaching experiment, Na, K, Fe, Al exist as the major impurity elements. The removal rate of Al, Fe showed little difference with various leaching methods but Ca, Mn, Na were very different. Four kinds of silica mineral (>99% purity) after physical purification treatment were used for ultrasonic leaching experiment. Among them IN-Si had a highest impurity removal rate. Ca, Cr, K, Zn were removed above 80% using ultrasonic leaching method and Fe was also removed above 60%. But Al showed 10~60% removal rate with different samples.

• Corrosion Science and Technology
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• v.7 no.3
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• pp.158-161
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• 2008

It is well known that iron is one of the most common impurity elements found in aluminum and its alloys. Iron in the aluminum forms an intermetallic compounds such as $FeAl_3$. The $FeAl_3$ particles on the aluminum surface are one of the most detrimental phases to the corrosion process and anodizing procedure for aluminum and its alloys. Trial and error surface treatment will be carried out to find the preferential and effective removal of $FeAl_3$ particles on the surfaces without dissolution of aluminum matrix around the particles. One of the preferable surface treatments for the aim of getting $FeAl_3$ free surface was an electrochemical treatment such as cathodic current density of $-2kAm^{-2}$ in a 20-30 mass% $HNO_3$ solution for the period of 300s. The corrosion characteristics of aluminum surface with $FeAl_3$ free particles are examined in a $0.1kmol/m^3$ NaCl solution. It is found that aluminum with free $FeAl_3$ particles shows higher corrosion resistance than aluminum with $FeAl_3$ particles.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.7
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• pp.275-281
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• 2003

$Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$ and $Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$:$Co^{2+}$ single crystals were grown by CTR method. The grown single crystals have defect chalcopyrite structure with lattice constant a=5.5966$\AA$, c=10.8042$\AA$ for the pure, a=5.6543$\AA$, c=10.8205$\AA$ for the Co-doped single crystal, respectively. The optical energy band gap was given as indirect band gap. The optical energy band gap was decreased according to add of Co-impurity Temperature dependence of optical energy band gap was fitted well to the Varshni equation. From this relation, we can deduced the entropy, enthalpy and heat capacity. Also, we can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_{d}$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.211-214
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• 1990

Investigation of GaAs/AlGaAs QW carried out by using PL and Absorption spectroscopy. In order to get high resolution (0.76meV) and low noise, proper experimental system was set-up. From measurements, we have deduced the properties of GaAs/AlGaAs QW, such as the residual impurity, well thickness, crystal quality, interface abruptness and well thickness uniformity. Also we can obtain other properties such as sub-band absorption by using Absorption Spectroscopy.

• Journal of IKEEE
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• v.17 no.4
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• pp.531-536
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• 2013

The impact of UV irradiation process on the AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor was investigated. Due to the high intensity UV irradiation before the gate dielectric deposition, the conductivity of AlGaN/GaN structure and the drain saturation current of the transistor increased by about 10 %. However, the pinch off characteristics of transistor was severely deformed by the process. By comparing the electrical characteristics of the transistors, it was proposed that the high intensity UV irradiation formed a sub-channel under the two dimensional electron gas of AlGaN/GaN structure even without additional impurity injection.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.137-140
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• 1999

Effects of annealing and impurities on the superconducting properties were investigated by the magnetization measurement in $Bi_2Sr_2CaCu_2O_{8+{\delta}}(Bi2212)$ single crystals grown by flux method. It has been found that the superconducting properties are affected by Mg and Al impurities remarkably. The transition temperature$(T_c)$ has been lowered by the impurity of Mg. However, the diamagnetism is remarkably increased in an annealed crystal grown in MgO crucible compared to that in $Al_2O_3$ crucible. The content of Mg impurity can not be considered as a principal parameter for the decay of superconducting properties probably because the diamagnetism is remarkably improved in annealed crystal containing Mg.