• Journal of the Korean institute of surface engineering
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• v.25 no.5
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• pp.223-233
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• 1992

(Ti, Al)N films were deposited on 304 stainless steel by D.C. magnetron sputtering using Al target and Ti plate. The properties of (Ti, Al)N films such as composition, microhardness, grain size, crystal structure were investigated. The chemical composition of (Ti, Al)N films was similar to the sputter area ratio of titanium to aluminum target by means of EDS and AES survey. The higher bias voltage to substrate and the smaller input of N2 gas showedthe increased microhardness and the finer grain size of the films. The results obtained from this study show, it is belived, that the (Ti, Al)N film by D.C.magne-tron sputtering is promising in the wear resistance use.

• Journal of the Korean institute of surface engineering
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• v.27 no.1
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• pp.19-28
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• 1994

A study on adhesion property of evaporated Al-Cr films was conducted on steel sheet by using two-source evaporator. Adhesion of Al-Cr coated steel was evaluated by tape test after $180^{\circ}$bending. Adhesion was decreased with increasing the Cr content in Al-Cr films. It was thought that the decrease in adhesion with increasing Cr content be related to insufficient wetting and diffusion of Cr atoms in the film. Best adhesion was achieved in the case of pure aluminum film..

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.102-105
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• 2005

In this study Al electrode for OLED was deposited by FTS(Facing Targets Sputtering) system which can deposit thin films with low substrate damage. The Al thin films were deposited on the cell (LiF/EML/HTL/Bottom electrode) as a function of working gas such as Ar, Kr or mixed gas. Also Al thin films were prepared with working gas pressure (1, 6 mTorr ). The film thickness and I-V curve of Al/cell were evaluated by $\alpha$-step and semiconductor parameter (HP4156A) measurement.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.969-973
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• 2012

AlN thin films were deposited on p-type Si(100) substrates by RF magnetron sputtering method. This study showed the change of the preferential orientation of AlN thin films deposition with the change of the deposition conditions such as sputtering pressure and Ar/N2 gas ratio in chamber. It was identified by X-ray diffraction patterns that AlN thin film deposited at low sputtering pressure has a (002) orientation, however its preferred orientation was changed from the (002) to the (100) orientation with increasing sputtering pressure. Also, it was observed that the properties of AlN thin films such as thickness, grain size and surface roughness were largely dependent on Ar/$N_2$ gas ratio and a high quality thin film could be prepared at lower nitrogen concentration. AlN thin films were investigated relationship between preferential orientation and deposition condition by using XRD, FE-SEM and PFM.

• Journal of the Korean institute of surface engineering
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• v.49 no.5
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• pp.467-471
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• 2016

In order to investigate the Na gettering, PSG/$SiO_2$/Al-1%Si multilevel thin films were fabricated. DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and PSG/$SiO_2$ passivations, respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling and XPS (X-ray Photoelectron Spectroscopy) analysis were used to determine the distribution and binding energies of Na, Al, Si, O, P and other elements throughout the PSG/$SiO_2$/Al-1%Si multilevel thin films. Na peaks were mainly observed at the the PSG/$SiO_2$ interface and at the $SiO_2$/Al-1%Si interfaces. Na impurity gettering in PSG/$SiO_2$/Al-1%Si multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and O elements in PSG passivation appears to be $SiO_2$.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.809-816
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• 1995

Ti1-xAlxN films were successfully deposited on high speed steel and silicon wafer by plasma-assisted chemical vapor deposition using a TiCl4/AlCl3/N2/Ar/H2 gas mixture. Plasma process enabled N2 gas to nitride AlCl3, which is not possible in sense of thermodynamics. XPS analyses revealed that the deposited layer contained Al-N bond as well as Ti-N bond. Ti1-xAlxN films were polycrystalline and had single phase, B1-NaCl structure of TiN. Interplanar distance, d200, of (200) crystal plane of Ti1-xAlxN was, however, decreased with Al content, x. Al incorporation into TiN caused the grain size to be finer and changed strong (200) preferred orientation of TiN to random oriented microstructure. Those microstructural changes with Al addition resulted in the increase of micro-hardness of Ti1-xAlxN film up to 2800Kg/$\textrm{mm}^2$ compared with 1400Kg/$\textrm{mm}^2$ of TiN.

• Transactions on Electrical and Electronic Materials
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• v.14 no.6
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• pp.321-323
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• 2013

100 nm thick Ga doped ZnO (GZO) thin films were deposited with DC and RF magnetron sputtering at room temperature on glass substrate and Al coated glass substrate, respectively. and the effect of the Al underlayer on the optical and electrical properties of the GZO films was investigated. As-deposited GZO single layer films had an optical transmittance of 80% in the visible wavelength region, and sheet resistance of 1,516 ${\Omega}/{\Box}$, while the optical and electrical properties of GZO/Al bi-layered films were influenced by the thickness of the Al buffer layer. GZO films with 2 nm thick Al film show a lower sheet resistance of 990 ${\Omega}/{\Box}$, and an optical transmittance of 78%. Based on the figure of merit (FOM), it can be concluded that the thin Al buffer layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

• Korean Journal of Materials Research
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• v.12 no.8
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• pp.676-681
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• 2002

Microstructure, mechanical properties, and oxidation resistance of TiAIN thin films deposited on quenched and tempered STD61 tool steel by arc ion plating were studied using XRD, XPS and micro-balance. The TiAIN film was grown with the (200) orientation. The grain size of TiAIN thin film decreased with increasing Al contents, while chemical binding energy increased with Al contents. When hard coating films were oxidized at $850^{\circ}C$ in air, oxidation resistance of both TiN and TiCN films became relatively lower since the surface of films formed non-protective film such as $TiO_2$. However, oxidation resistance of TiAIN film was excellent because its surface formed protective layer such as $_A12$$O_3$ and $_Al2$$Ti_{7}$$O_{15}$, which suppressed oxygen intrusion.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.9
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• pp.378-382
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• 2003

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCI (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure md the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures ($\leq$$300^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.391-394
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• 2002

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCl (0.5%) to examine the electrical and surface morphology Properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9 mTorr) and high substrate temperatures ($\leq$30$0^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.