• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.106-106
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• 2009

Al-doped ZnO (AZO) thin films were grown on glass substrates by co-sputtering at room temperature. We made ZnO and Al target and ZnO:Al film is deposited with sputter which has two RF gun source. The Al content was controlled by varying Al RF power and effect of Al contents on the properties of ZnO:Al film was investigated. Crystallinity and orientation of the ZnO:Al films were investigated by X-ray diffraction (XRD), surface morphology of the ZnO:Al films was observed by atomic force microscope. Electrical properties of the ZnO:Al films were measured at room temperature by van der Pauw method and hall measurement. Optrical properties of ZnO:Al films were measured by UV-vis-NIR spectrometer.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.103-108
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• 2000

The texture of Al/Ti thin films deposited on low-dielectric polymer substrates has been investigated. Fifty-nm-thick Ti films and 500-nm-thick Al-1%Si-0.5%Cu (wt%) films were deposited sequentially onto low-k polymers and SiO$_2$ by using a DC magnetron sputtering system. The texture of Al thin film was determined using X-ray diffraction (XRD) theta-2theta ($\theta$-2$\theta$) and rocking curve and the microstructure of Al/Ti films on low-k polymer and SiO$_2$ substrates was characterized by Transmission electron microscopy (TEM). hall thin films deposited on SiO$_2$ had stronger texture than those deposited on low-k polymer. The texture of Al thin films strongly depended on that of Ti films. Cross-sectional TEM resealed that Brains of Ti films on SiO$_2$ substrates had grown perpendicular to the substrate, while the grains of Ti films on SiLK substrates were farmed randomly. The lower degree of 111 texture of Al thin films on low-k polymer was due to Ti underlayer.

• Korean Journal of Metals and Materials
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• v.50 no.3
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• pp.248-255
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• 2012

AlN thin films containing various amounts of Co, AlN-Co, and Al-Co alloy particles were prepared using a two-facing-target type dc reactive sputtering (TFTS) system. The as-deposited films exhibited the variable nature expected from an AlN-rich phase, and an amorphous-like phase, depending on the Co content in the films. Specific favorable microstructures were prepared by optimizing annealing conditions. Those microstructures and their magnetic properties and resistivity were investigated. As-deposited films showed very small saturation magnetization and an amorphous-like structure. However, when annealed, the as-deposited amorphous-like phase decomposes into phases of AlN, Co and Al-Co. These annealing induced changes in the microstructure improve the magnetization and resistivity of the films. Further improvement of soft magnetic properties could lead to the material being used for high density magnetic recording head material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.235-236
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• 2008

Wet etched ZnO:Al films for thin film solar cells were prepared by Facing Target sputtering(FTS) method. Wet etching has been used to produce a rough TCO surface that enables light trapping in the absorber. The ZnO:Al films for thin film solar cells were etched by HCl 0.5%. The etching performance of ZnO:Al films can be tuned by changing etching time. The etched ZnO:Al films compared to a smooth ZnO:Al thin film structure. From the results, the lowest resistivity of deposited films was $5.67\times10^{-4}$ [$\Omega$-cm] and the transmittance of all ZnO:Al thin films were over 80% in visible range.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1479-1481
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• 2002

AlN thin films were deposited on Si(100) and $SiO_2$/Si substrates using R.F. magnetron sputtering system. The effect of various deposition conditions on the crystal orientation of AlN films was investigated to obtain a highly (002)-oriented films. SAW filters were fabricated using AlN films with various thicknesses and their frequency response characterizations were measured. Experimental results showed that the (002)-orientation and surface roughness of AlN films played a crucial role of determining the frequency response of AlN SAW devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.100-100
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• 2000

Aluminium oxide (Al2O3) films have been investigated for many applications such as insulating materials, hard coatings, and diffusion barriers due to their attractive electrical and mechanical properties. In recent years, application of Al2O3 films for dielectric materials in integrated circuits as gates and capacitors has attracted much attention. Various deposition techniques such as sol-gel, metalorganic decomposition (MOD), sputtering, evaporation, metalorganic chemical vapor deposition (MOCVD), and pulsed laser ablation have been used to fabricate Al2O3 thin films. Among these techniques, reactive sputtering has been widely used due to its high deposition rate and easy control of film composition. It has been also reported that the sputtered Al2O3 films exhibit superior chemical stability and mechanical strength compared to the films fabricated by other processes. In this study, Al2O3 thin films were deposited on Pt/Ti/SiO/Si2 and Si substrates by DC reactive sputtering at room temperature with variation of the Ar/O2 ratio in sputtering ambient. Crystalline phase of the reactively sputtered films was characterized using X-ray diffractometry and the surface morphology of the films was observed with Scanning election microscopy. Effects of Th Ar/O2 ratio characteristics of Al2O3 films were investigated with emphasis on the thickness dependence of the dielectric properties. Correlation between the dielectric properties and the microstructure was also studied

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.10
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• pp.1311-1316
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• 1995

The electrical properties of the Langmuir-Blodgett (LB) films layered with arachidic acid were studied at the room temperature. The sample was formed with 2 different structure ; One was Al/LB/Al and the other was Au/LB/Au. The precise structure of Al/LB/Al was considered as Al/Al$_{2}$O$_{3}$/LB/Al, because the natural oxide layer was formed on surface of lower Al electrode. The electrical conductivity of Al/Al$_{2}$O$_{3}$/LB/Al structure was determined the value of 3.5 * 10$^{-14}$ S/cm from the measurement of current-voltage (I-V) characteristics. The sample with the structure of Au/LB/Au was made to eliminate the influence of oxide layer in the electrical properties of the LB films. The short circuit current was observed in this sample from the I-V characteristics. To verify the reason of short circuit current generation, copper decoration method was employed to the 15 layers of LB films deposited on the Al and Au electrode each. The defects were shown on the films deposited with Au electrode. This results means that the defects on the LB films which layered with the Au electrode were contributed to the short circuit current. Several films (15, 31, 51, 71L) were deposited on the Au electrode and measured the size of defects with the copper decoration method. The size of defects becomes smaller as the film layer was increased. We conclude that the existence of defects affects the short circuit current generation.

• Transactions of Materials Processing
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• v.28 no.1
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• pp.43-48
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• 2019

Aluminum nitride (AlN) is used by the semiconductor industry, and is a compound that is required when manufacturing high thermal conductivity. The AlN films with c-axis orientation and thermal conductivity characteristic were deposited by using the Pulsed Laser Deposition (PLD). The AlN thin films were characterized by changing the deposition conditions. In particular, we have researched the AlN thin film deposited under optimal conditions for growth atmosphere. The epitaxial AlN films were grown on sapphire ($c-Al_2O_3$) single crystals by PLD with AlN target. The AlN films were deposited at a fixed temperature of $650^{\circ}C$, while conditions of nitrogen ($N_2$) pressure were varied between 0.1 mTorr and 10 mTorr. The quality of the AlN films was found to depend strongly on the $N_2$ partial pressure that was exerted during deposition. The X-ray diffraction studies revealed that the integrated intensity of the AlN (002) peak increases as a function the corresponding Full width at half maximum (FWHM) values decreases with lowering of the nitrogen partial pressure. We found that highly c-axis orientated AlN films can be deposited at a substrate temperature of $650^{\circ}C$ and a base pressure of $2{\times}10^{-7}Torr$ in the $N_2$ partial pressure of 0.1 mTorr. Also, it is noted that as the $N_2$ partial pressure decreased, the thermal conductivity increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.116-119
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• 2005

Al doped ZnO thin films (ZnO:Al) were deposited on poly carbonate (PC) substrate by rf magnetron sputtering. In addition, the electrical, optical properties of the films prepared at various conditions were investigated. As the sputter power increased, the resistivity of ZnO:Al films decreased, regardless of substrate types. However, the resistivity of the films increased with the sputter pressure. The ZnO:Al films were increasingly dark gray colored as the sputter power increased, resulting in the loss of transmittance. High quality films with resistivity as low as 1.43${\times}$10$^{-4}$ Ω-cm and transmittance over 80 % have been obtained by suitably controlling the deposition parameters.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.1
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• pp.16-22
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• 2011

Al-Co/AlN-Co multilayer films with different layer thicknesses were prepared by using a two-facing target type D.C sputtering (TFTS) system. The deposited films were annealed isothermally at different temperatures and their microstructure, magnetic properties and resistivity were investigated. The magnetization of as-deposited films is very small irrespective of layer thickness. It was found that annealing conditions and layer thickness ratio (LTR) of Al-Co to AlN-Co can control the microstructure as well as the physical properties of the prepared films. The resistivity and magnetization increase and the coercivity decreases with decreasing LTR. High resistivity and sufficient magnetization were obtained for the films with LTR = 0.35. Films having such considerable magnetization and resistivity will be a potential candidate to be used for a high density recording material.