• 한국재료학회지
• /
• 제4권7호
• /
• pp.759-766
• /
• 1994

본 연구에서는 Ta 박막 밑에 $SnO_{2}$박막층을 입혀서 $Ta/SnO_2$이중박막이 산화될 때 산소의 공급원을 2원화 함으로써 $Ta_2O_5$의 stoichiomitry를 향상시켜 $Ta_2O_5$박막 커패시터의 주설전류를 줄이고자 하였다. Tantalum을 실리콘 웨이퍼 위에 기판온도를 변화시켜 가면서 전자빔증착이나 스퍼터링 방밥으로 입히고 $500^{\circ}C$~$900^{\circ}C$에서 산화시켜 Al/$Ta_2O_5$p-Si/Al또는Al/$Ta_2O_5$/p-Si/Al과 같은 MIS형 커패시터를 만들어 유전상수 및 누설전류를 측정하였으며 XRD, AES, ESCA등을 이용하여 박막의 결정성 및 특성을 분석하였다. $SnO_{2}$박막층을 입힌 커패시터는$SnO_{2}$층을 입히지 않은 커패시터보다 10배 이상 큰 200정도의 유전상수 값을 나타내었다. 그리고 산화온도가 높으면 박막의 결정화로 인하여 유전상수는 증가하지아는 누설전류도 약간 증가하는 것이 확인되었다. 또한 높은 증착온도는 일반적으로 누설전류를 낮추는 것으로 나타났다. 특히 $SnO_{2}$층을 입힌 경우에 기판온도를 $200^{\circ}C$로 하고 $800^{\circ}C$에서 산화시켜 만든 커패스터의 경우에 $4 \times 10^{5}$V/cm의 전장강도에서 $10^{-7}A/\textrm{cm}^2$의 낮은 누설전류 값을 나타내었다. $Ta_2O_5$박막은 $700^{\circ}C$ 이상에서 박막이 결정되고, Ta /$SnO_{2}$ 이중박막을 산화시키면 처음에는 Ta박막과 $SnO_{2}$박막 계면에서 $SnO_{2}$로부터 Ta박막에 산소가 공급되지마는 점차 Sn이 Ta박막쪽으로 확산되어 결국에는 Ta-Sn-O계의 새로운 ternary oxide가 생성되는 것으로 나타났다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1999년도 하계학술대회 논문집 D
• /
• pp.1735-1737
• /
• 1999

In this study, several lanthanide complexes such as Eu$(TTA)_3$(Phen). Tb$(ACAC)_3$(Cl-Phen) were synthesized and the white-light electroluminescence (EL) characteristics of their thin films were investigated. where the devices having structures of anode/TPD/Tb$(ACAC)_3$(Cl-Phen)/Eu$(TTA)_3$(Phen)/$Alq_3$ or $Bebq_2$/ cathode and the low work function metal alloy such as Li:Al was used as the electron injecting electrode (cathode). Details on the white-light-emitting characteristics of these device structures were explained by the energy band diagrams of various materials used in these structures, where the energy levels of new materials such as ionization potential (IP) and electron affinity (EA) were measured by cyclic voltametric method.

• Corrosion Science and Technology
• /
• 제4권6호
• /
• pp.217-221
• /
• 2005

In the present investigation, holographic interferometry was utilized for the first time to monitor in situ the thickness of the oxide film of aluminium samples during anodization processes in boric acid solutions. The anodization process (oxidation) of the aluminium samples was carried out by the technique of the electrochemical impedance spectroscopy(EIS), in different concentrations of boric acid (0.5-5.0% $H_3BO_3$) at room temperature. In the mean time, the real-time holographic interferometry was used to measure the thickness of anodized (oxide) film of the aluminium samples in solutions. Consequently, holographic interferometry is found very useful for surface finish industries especially for monitoring the early stage of anodization processes of metals, in which the thickness of the anodized film of the aluminium samples can be determined without any physical contact. In addition, measurements of electrochemical values such as the alternating current (A.C) impedance(Z), the double layer capacitance($C_{dl}$), and the polarization resistance(Rp) of anodized films of aluminium samples in boric acid solutions were made by the electrochemical impedance spectroscopy(EIS). Attempts to measure electrochemical values of Z, Cdl, and Rp were not possible by holographic interferometry in boric acid especially in low concentrations of the acid. This is because of the high rate of evolutions of interferometric fringes during the anodization process of the aluminium samples in boric acid, which made measurements of Z, Cdl, and Rp are difficult.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.374-374
• /
• 2012

Nowadays, Active Matrix Organic Light-Emitting Diodes (AM-OLEDs) are the superior display device due to their vivid full color, perfect video capability, light weight, low driving power, and potential flexibility. One of the advantages of AM-OLED over Liquid Crystal Display (LCD) lies in its flexibility. The potential flexibility of AM-OLED is not fully explored due to its sensitivity to moisture and oxygen which are readily present in atmosphere, and there are no flexible encapsulation layers available to protect these. Therefore, we come up with a new concept of Inorganic-Organic hybrid thin film as the encapsulation layer. Our Inorganic layer is Al2O3 and Organic layer is F-Alucone. We deposited these layers in vacuum state using Atomic Layer Deposition (ALD) and Molecular Layer Deposition (MLD) techniques. We found the results are comparable to commercial requirement of 10-6 g/m2 day for Water Vapor Transmission Rate (WVTR). Using ALD and MLD, we can control the exact thin film thickness and fabricate more dense films than chemical or physical vapor deposition methods. Moreover, this hybrid encapsulation layer potentially has both the flexibility of organic layers and superior protection properties of inorganic layer.

• Bulletin of the Korean Chemical Society
• /
• 제32권spc8호
• /
• pp.3045-3050
• /
• 2011

The synthesis of copolymers containing thiophene and benzimidazole unit by Stille polymerization is reported. The polymers with many unsubstituted thiophene units in the backbone have been reported to show low solubility, which has been a problem for spin-coating for the device fabrication. In dihexyl-2H-benzimidazole, the sulfur at 2-position of BT unit was replaced with dialkyl substituted carbon, while keeping the 1,2-quinoid form, to improve the solubility of the polymers. The PL emission spectra of the PHBIT1, PHBIT2 and PHBIT3 in chloroform solutions show maximum peaks at 500~561 nm. In thin films, maximum peaks of the PHBITs appeared at 529, 562 and 569 nm, respectively. The EL emission maxima of the PHBIT1 and PHBIT2 appear at around 588 and 576 nm, respectively. The current density and maximum luminescence of the LED with the configuration of ITO/PEDOT/ PHBIT2/Ca/Al are 552 mA/$cm^2$ and 46 cd/$m^2$, respectively.

• 한국전기전자재료학회논문지
• /
• 제28권7호
• /
• pp.446-449
• /
• 2015

An improvement of light-extraction efficiency of organic light-emitting diodes was studied by using random-textured films (RTF). Device was made in a structure of RTF/glass/ITO/TPD/$Alq_3$/LiF/Al. RTF mold was made by spreading PDMS solution on a sandpaper. By pressing this mold on the glass substrate pre-coated with ZPU material, the RTF was obtained. From this study, there was an improvement of external quantum efficiency by about 30% in the device with the random-textured film (RTF 40) compared to that of the reference one.

• 한국세라믹학회지
• /
• 제29권12호
• /
• pp.926-934
• /
• 1992

Uniform diamond films in a few $\textrm{mm}^2$ size and locally isolated diamond single crystals in size of 60 $\mu\textrm{m}$ were synthesized on Si-wafer and Al2O3 substrate by the method of acetylene flame. The effects of substrate temperature and flow ratio of oxygen to acetylene on the morphology of deposited diamond were investigated. According to the observations of growth behavior of diamond on Si substrate with respect to substrate surface pretreatment and flow ratio, it was shown that well faceted diamonds could grow uniformly when flow ratio was above 0.9 and substrates were densely scratched. With increasing substrates temperature, the crystal morphology changes from octahedron bounded by only {111} plane below 850$^{\circ}C$ to cubo-octahedron with almost equal development of {111} and {100} plane in the temperature range of 850∼950$^{\circ}C$. Between 950∼1050$^{\circ}C$, the {111} faces become rough and concave. Above 1050$^{\circ}C$, new crystallites begin to grow on concave {111} surface and overall morphology looks like cubo-octahedron with degenerated {111} faces. These changes of morphology can be understood in terms of the different growth mode of each crystallographic plane with respect to the substrate temperature and supersaturation. And the observed phenomena on {111} planes can be related to the face instability and twin generation.

• 한국세라믹학회지
• /
• 제38권4호
• /
• pp.370-379
• /
• 2001

PLD(pulsed laser deposition) 기법을 이용하여 LaAl $O_3$(100) 기판 위에 L $a_{0.67}$ $A_{0.33}$Mn $O_{3-{\delta}}$ (A=Ca, Sr, Ba) 에피 박막을 성장하였다. 박막의 격자 상수 및 스트레인 상태는 GID(grazing incidence X-ray diffraction)법과 투과 전자 현미경 법을 이용하여 조사하였다. 박막의 <001> 방향은 기판 표면의 수직방향에 평행하게 놓였으며, 박막의 단위포는 기판과의 격자 불일치에 기인하여 a/c=0.98인 의사-정방정 페롭스카이트(pseudo-tetragonal perovskite) 구조를 가졌다. A 자리의 양이온 반경이 증가함에 따라 단위포의 체적, $\varepsilon$$^{∥}$, 그리고 $\varepsilon$$_{⊥}$이 각각 증가하였다. L $a_{0.67}$ $A_{0.33}$Mn $O_{3-{\delta}}$ (A=Ca, Sr, Ba) 박막의 온도 및 자장에 따른 전기 전도 특성 MR(%), Tc, $T_{MI}$ 들을 조사하였으며, 이 결과들을 박막의 구조적 특성과 상관하여 고찰하였다.여 고찰하였다.

• 한국항해항만학회:학술대회논문집
• /
• 한국항해항만학회 2000년도 추계학술대회논문집
• /
• pp.116-119
• /
• 2000

The advantage of plasma-sprayed coating is their good resistance against thermal shock due to the porous state of the coated layer with a consequently low Youngs modulus. However, the existence of many pores with a bimodal distribution and a laminar structure in the coating reduces coating strength and oxidation protection of the base metals. In order to counteract these problems, there have been many efforts to obtain dense coatings by spraying under low pressure or vacuum and by controlling particle size and morphology of the spraying materials. The aim of the present study is to survey the effects of the HIP treatment between 1100 and 130$0^{\circ}C$ on plasma-sprayed oxide coating of A1$_2$O$_3$, A1$_2$O$_3$-SiO$_2$on the metal substrate (type C18N10T stainless steel). These effects were characterized by phase identification, Vickers hardness measurement, and tensile test before and after HIPing. These results show that high-pressure treatment has an advantage for improving adhesive strength and Vickers hardness of plasma-sprayed coatings.

• 대한방사선기술학회지:방사선기술과학
• /
• 제14권1호
• /
• pp.49-60
• /
• 1991

Thermoluminescent phosphors, which are now being used widely in radiation dosimetry, have an excellent sensitivity to ionizing radiation. In this study, thermoluminescent phosphors of $CaSO_4$ : Mn, $CaSO_4$ : Dy and $CaSO_4$ : Tm are prepared and their physical properties are investigated by measuring the trapping parameters and their luminescent spectra. By considering the sensitivity to X-ray and fading characteristics, $CaSO_4$ : Dy is most adequate to imaging plate. The imaging plate are prepared by coating the $CaSO_4$ : Dy powder on the Al substrate and its dose dependence is linear within the range of 40 mGy-20 Gy X-ray. The sensitivity of imaging plate depends linearly on the thickness of coated phosphor layer up to $35\;mg/cm^2$ and is independent on the grain size of the phosphor in the range of $70{\sim}250\;{\mu}m$. By photographing the imaging plate, X-ray images of the test object are obtained and better than those of X-ray films.