• 열처리공학회지
• /
• 제14권5호
• /
• pp.292-296
• /
• 2001

In this work, an ultra-high vacuum activated reactive evaporation equipment was built. With reaction of Al and oxygen plasma, $Al_2O_3$ was deposited on the surface of etched Al foil. The chamber was evacuated down to $2{\times}10^{-7}$ torr initially. The Ar and $O_2$ gas introduced into the chamber to maintain $5{\times}10^{-5}$ torr during deposition. Ar gas prevents recombining of the ionized oxygen. Evaporation was maintained by electron beam evaporator continuously. Heating filament and electrode were used in order to generate plasma. The substrate bias of -300V was introduced to accelerate deposition of evaporated Al atoms. The composition and morphology of deposited $Al_2O_3$ films were analyzed by x-ray photoelectron spectroscopy(XPS) and atomic force microscopy (AFM), respectively. The Al oxide was formed on the surface of etched Al foil. According to AFM results, the surface morphology of $Al_2O_3$ film indicates uniform feature. Dielectric characteristic was measured as a function of frequency. Measured withstanding voltage and capacitance were 52V and $24{\mu}F/cm^2$, respectively. The obtained $Al_2O_3$ film shows clean condition without contaminants, which could be adapted to capacitor production.

• 한국막학회:학술대회논문집
• /
• 한국막학회 1993년도 춘계 총회 및 학술발표회
• /
• pp.34-34
• /
• 1993

세라믹 분리막은 유기질 막에 비하여 열적, 기계적 및 화학적으로 안정하기 때문에 기존의 유기질 막을 사용하기 어려운 작업 조건 하에서도 응용의 잠재성을 가지고 있다. 본 실험은 disk형태의 다공성 $Al_2O_3$ 담체위에 CVD 법과 Evaporation Oxidation 법에 의해 $Al_2O_3$를 코팅하여 세라믹 분리막을 제조하였다. CVD법에 의한 제조는 Al-isopropoxide를 350$\circ$C에서 담체위에 증착시켜 제조하였으며, Evaporation-Oxidation 법에 의한 제조는 Al을 담체위에 evaporation 시킨 후 dry oxidation 시켜서 제조하였다.

• 대한전자공학회논문지
• /
• 제24권6호
• /
• pp.980-985
• /
• 1987

The thin metal films of Cr, Al, Mn and were made in various evaporation rates with 100\ulcornerthickness under 2x10**-9 bar vacuum level. We analized and discussed the relationships between changes of structure, morphology and sheet resistance, light transmittance for the corresponding evaporation rates. As the evaporation rates were decreased at higher rates, grain sizes of all film were decreased, however both of the sheet resistance and light transmittance were increased. At lower evaporation rate, films of Cr and Cu porduced non-stoi-chiometric oxides but Al an Mn showed up amorphous structures.

• 한국세라믹학회지
• /
• 제32권3호
• /
• pp.349-358
• /
• 1995

The ceramic composite membrane was synthesized by thermal oxidation after evaporation of Al on the support prepared by slip casting process. Oxidation was performed at $700^{\circ}C$ and 80$0^{\circ}C$ under dry oxygen atmosphere. It was considered as optimum oxidation condition that the membrane showed a knudsen behaviro. A further oxidation resulted in an increase of gas permeability because top layer became densified. Then, a multi-layered composite membrane was synthesized through a sol-gel method, evaporation and thermal oxidation of Al coating processes. While the membrane was thermally stable up to 80$0^{\circ}C$, gas permeability was rapidly decreased even at a slight amount of deposition of Al.

• 한국진공학회지
• /
• 제9권3호
• /
• pp.207-215
• /
• 2000

진공증착 및 이온플레이팅 방법을 이용하여 냉간 압연된 강판상에 알루미늄피막을 형성시킨 후, 증발율 및 증기분포 변화를 측정하고 각 증착방법에서의 증발율에 따른 증기분포 변화를 비교 및 검토하였다. 본 실험에서의 이온플레이팅은 증발원 근처에 이온화 전극을 설치하는 방법으로 고전류 아크방전을 유도하여 $10^{-4}$ Torr 이하에서도 기존의 이온플레이팅에 비해 높은 이온화율을 얻을 수 있는 아크방전 유도형 이온플레이팅(Arc-induced ion Plating; AIIP) 방법을 이용하였다. 전자빔을 이용하면서 알루미나 크루시블을 사용하여 알루미늄을 증발시킬 경우 분당 2.0 $\mu\textrm{m}$이상의 높은 증발율을 얻을 수 있었으며, 이온플레이팅의 경우 이온화된 증기의 상호작용에 따른 산란 효과로 증발율이 다소 낮아짐을 알 수 있었다. $cos^{n/\phi}$로 이루어지는 증기분포의 결정인자(n)의 값이 진공증착의 경우는 1에 근접하는 것으로 나타났고 AIIP의 경우는 2 또는 그보다 더 큰 값으로 이루어지는 것을 확인하였다. 이로부터 이온플레이팅의 경우 이온화율 또는 기판 바이어스 전압의 효과가 다른 조건에 비해 증기분포에 더 크게 영향을 미치는 것을 확인할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.1026-1029
• /
• 2001

Zinc films have been deposited onto various buffer layers, Al, Al-Cu, Ag and Ag-Al, by vacuum evaporation method in order to investigate the film microstructure and its consequence on the film growth. Zn films were grown onto Al buffer layers with faster rates than on Ag buffer layers, because of the presence of preferred growth orientation. Especially, in the Zn film formation on the Ag layers, intermetallic compounds AgZn was formed to cause the different growth orientation from Zn film obtained on the Al layers.

• Journal of Advanced Marine Engineering and Technology
• /
• 제23권4호
• /
• pp.514-522
• /
• 1999

The laser-induced plasma affects greatly on the results of welding process. moreover selective evaporation loss of alloying elements leads to change in chemical composition of weld metal as well as the mechanical properties of welded joint. this study was undertaken to obtain a fundamental knowledge of pulsed laser welding phenomena especially evaporation mechanism of different aluminum alloys. The intensities of molecular spectra of AlO and MgO were different each other depeding on the power density of a laser beam Under the low power density condition the MgO band spectrum was predominant in intensity while the AlO spectra became much stronger with an increase in the power density. These behaviors have been attributed to the difference in evaporation phenomena of Al and Mg metals with different boiling points and latent heats of vaporization. The time-averaged plasma temperature and electron number density were determined by spectroscopic methods and consequently the obtained temperature was $3,280{\pm}150K$ and the electron number density was $1.85{\times}10^{19}\;l/m^3$.

• 대한금속재료학회지
• /
• 제50권1호
• /
• pp.78-85
• /
• 2012

Aluminum nitride(AlN) is a compound (III-V group) of hexagonal system with a crystal structure. Its Wurzite phase is a very wide band gap semiconductor material. It has not only a high thermal conductivity, a high electrical resistance, a high electrical insulating constant, a high breakdown voltage and an excellent mechanical strength but also stable thermal and chemical characteristics. This study is on the preferred orientation characteristics of AlN thin films by reactive evaporation using $NH_3$. We have manufactured an AlN thin film and then have checked the crystal structure and the preferred orientation by using an X-ray diffractometer and have also observed the microstructure with TEM and AlN chemical structure with FT-IR. We can manufacture an excellent AlN thin film by reactive evaporation using $NH_3$ under 873 K of substrate temperature. The AlN thin film growth is dependent on Al supplying and $NH_3$ has been found to be effective as a source of $N_2$. However, the nuclear structure of AlN did not occur randomly around the substrate a particle of the a-axis orientation in fast growth speed becomes an earlier crystal structure and is shown to have an a-axis preferred orientation. Therefore, reactive evaporation using $NH_3$ is not affected by provided $H_2$ amount and this can be an easy a-axis orientation method.

• 자원환경지질
• /
• 제36권2호
• /
• pp.103-109
• /
• 2003

동해탄광 지역의 산성광산배수에는 Ca, SO$_4$, Mg, Al의 함량이 높게 나타난다. 이 일대의 산성광산배수를 증발시켰을 때 생성된 증발잔류물에서는 주로 석고(CaSO$_4$${\cdot}$2$H_2O$)가 생성되었으며 그 외에 소량의 알루노겐(Al$_2$(SO$_4$)$_4$${\circ}$17$H_2O$) 과 헥사하이드라이트(MgSO$_4$${\circ}$6$H_2O$)가 형성되었다. 석고를 형성하는 Ca는 주변의 모암속에 포함된 방해석에서, SO$_4$ 는 폐석에 포함된 황철석에서 기원한 것으로 생각된다. 함수 알루미늄황산염광물인 알루노겐은 침상의 결정으로 나타난다. 하천수의 Al은 모암이나 폐석에 포함된 엽납석, 일라이트, 녹니석과 같은 층상규산염광물의 화학적 용해작용에 의해 부과된 것으로 추정된다. 함수 마그네슘황산염광물인 헥사하이드라이트는 침상이나 섬유상의 결정으로 생성되었으며 Mg의 기원은 모암내의 돌로마이트와 광산폐셔의 주 구성광물인 녹니석으로 판단된다.

• 한국분말재료학회지
• /
• 제11권2호
• /
• pp.105-110
• /
• 2004

In this study the possibility to obtain a homogeneous mixture and to produce solid solutions and intermetallic compounds of Fe and Al nano particles by simultaneous pulsed wire evaporation (S-PWE) have been investigated. The Fe and Al wires with 0.45 mm in diameter and 35 mm in length were continuously co-fed by a special mechanism to the explosion chamber and simultaneously exploded. The characteristics, e.g., phase composition, particle shape, and specific surface area of Fe-Al nano powders have been analyzed. The synthesized powders, beside for Al and $\alpha$-Fe, contain significant amount of a high-temperature phase of $\gamma$-Fe, Fe Al and traces of other intermetallics. The phase composition of powders could be changed over broad limits by varying initial explosion conditions, e.g. wire distance, input energy, for parallel wires of different metals. The yield of the nano powder is as large as 40 wt ％ and the powder may include up to 46 wt % FeAl as an intermetallic compound.