• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.8
• /
• pp.764-768
• /
• 2006

For the possible application of pearl pigment, multi-layered $TiO_2/Al,\;Cr/TiO_2$ thin film were deposited on $SiO_2$ substrate by using sputtering method, $TiO_2$ and Al or Cr was selected as a possible high and low refraction material at the film interface respectively. Optical properties including color effect were systematically studied in terms of different film thickness and film layers by using spectrometer. In order to expect the experimental results, the simulation program, the Essential Macleod Program(EMP) was adopted and compared with the experimental data. The film consisting of $TiO_2/Al,\;Cr/TiO_2$ layers shows a wavelength range of $430{\sim}760nm$, typically color ranges between bluish purple and red. It was confirmed that this experimental result was quite well consistent with the experimental one.

• Journal of the Korean Applied Science and Technology
• /
• v.20 no.2
• /
• pp.148-153
• /
• 2003

Electron transfer through an Langmuir-Blodgett(LB) monolayer film sandwiched between metal electrodes. We used an eicosanoic acid material and the material was very famous as a thin film insulating material. Eicosanoic acid monolayer was deposited by Langmuir-Blodgett(LB) technique and a subphase was a $CdCl_2$ solution as a 2${\times}10^{-4}$ mol/L. Also we used a bottom electrode as an Al/$Al_2O_3$ and a top electrode as a Al and Ti/Al. Here, the $Al_2O_3$ on the bottom electrode was deposited by thermal evaporation method. The $Al_2O_3$ layer was acted on a tunneling barrier and insulating layer in tunnel diode. It was found that the proper transfer surface pressure for film deposition was 25 mN/m and the limiting area per molecule was about 24 ${\AA}^2$/molecule. When the positive and negative bias applied to the molecular device, the behavior shows that a tunnel switching characteristics. This result were analyzed regarding various mechanisms.

• Journal of the Korean institute of surface engineering
• /
• v.35 no.3
• /
• pp.149-157
• /
• 2002

Spectral emissivity depends on the surface conditions of the materials. The mechanisms that affect the spectral emissivity in anodic oxide films on aluminum were investigated. The aluminum specimens were anodized in a sulfuric acid solution and the thickness of the resulting oxide film formed changed with the anodizing time. FT-IR spectrum analysis identified the anodic oxide film as boehmite ($Al_2$$O_3$.$H_2$O). Both the infrared emisivity and reflectivity of the anodized aluminum were affected by the structure of the anodic oxide film because Al-OH and Al-O-Al have a pronounced absorption band in the infrared region of the spectrum. The presence of an anodic oxide film on aluminum caused a rapid drop in the infrared reflectivity. An aluminum surface in the clean state had an emissivity of approximately 0.2. However, the infrared emissivity rapidly increased to 0.91 as the thickness of the anodic oxide film increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.1026-1029
• /
• 2001

Zinc films have been deposited onto various buffer layers, Al, Al-Cu, Ag and Ag-Al, by vacuum evaporation method in order to investigate the film microstructure and its consequence on the film growth. Zn films were grown onto Al buffer layers with faster rates than on Ag buffer layers, because of the presence of preferred growth orientation. Especially, in the Zn film formation on the Ag layers, intermetallic compounds AgZn was formed to cause the different growth orientation from Zn film obtained on the Al layers.

• Korean Journal of Materials Research
• /
• v.12 no.8
• /
• pp.676-681
• /
• 2002

Microstructure, mechanical properties, and oxidation resistance of TiAIN thin films deposited on quenched and tempered STD61 tool steel by arc ion plating were studied using XRD, XPS and micro-balance. The TiAIN film was grown with the (200) orientation. The grain size of TiAIN thin film decreased with increasing Al contents, while chemical binding energy increased with Al contents. When hard coating films were oxidized at $850^{\circ}C$ in air, oxidation resistance of both TiN and TiCN films became relatively lower since the surface of films formed non-protective film such as $TiO_2$. However, oxidation resistance of TiAIN film was excellent because its surface formed protective layer such as $_A12$$O_3$ and $_Al2$$Ti_{7}$$O_{15}$, which suppressed oxygen intrusion.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.9
• /
• pp.378-382
• /
• 2003

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCI (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure md the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures ($\leq$$300^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.391-394
• /
• 2002

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCl (0.5%) to examine the electrical and surface morphology Properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9 mTorr) and high substrate temperatures ($\leq$30$0^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
• /
• v.5 no.1
• /
• pp.30-36
• /
• 1999

Physical analysis of some composite films of outer packaging at process cheeses in Korea is as following. In comparison with four composite films, tensile strength is $72.2{\mu}PET/PVDC/PE/AL-vac/PE\;film\;MD9.55kg/15mm,\;TD8.95kg/15mm>79.3{\mu}PET/PVDC/L-LDPE\;film\;MD5.37kg/15mm,\;TD5.01kg/15mm>96.9{\mu}PE/PVDC/PE\;film\;MD5.42kg/15mm,\;TD4.73kg/15mm>61.6{\mu}PVDC/PE/AL-vac/CPS\;film\;MD4.65kg/15mm,\;TD4.22kg/15mm$. Water vapor transmission is $72.2{\mu}PET/PVDC/PE/AL-vac/PE\;film\;0.41g/m^2{\cdot}24hr>79.3{\mu}PET/PVDC/L-LDPE\;film\;3.77g/m^2{\cdot}24hr>96.9{\mu}PE/PVDC/PE\;film\;3.81g/m^2{\cdot}24hr>61.6{\mu}PVDC/PE/AL-vac/4.91g/m^2{\cdot}24hr$. Gas transmission $O_2:N_2:CO_2$ is $72.2{\mu}PET/PVDC/PE/AL-vac/PE\;film\;1.81:0.74:4.2cc/m^2{\cdot}24hr{\cdot}atm>79.3{\mu}PET/PVDC/L-LDPE\;film\;13.4:6.4:34.2cc/m^2{\cdot}24hr{\cdot}atm>96.9{\mu}PE/PVDC/PE\;film\;15.3:7.1:42.0cc/m^2{\cdot}24hr{\cdot}atm>61.6{\mu}PVDC/PE/AL-vac/CPS\;film\;25.3:12.5:59.3cc/m^2{\cdot}24hr{\cdot}atm$ each other. And for preservation this were sealed to filths $N_2,\;CO_2$ gas or defilling ai (vacuum type) in the packaging and reserved less than $10^{\circ}C$ at refrigerator.

• Journal of the Korean Vacuum Society
• /
• v.9 no.3
• /
• pp.233-236
• /
• 2000

The structural, electrical and chemical characteristics of Al alloy thin film with low impurity concentrations AlW deposited by using dc magnetron sputtering deposition are investigated for the applications as data bus line in the TFT-LCD panel. The deposited thin films show the decrease of resistivity and the increase of grain size after the RTA at $300^{\circ}C$ for 20 min.. Moreover, the resistivity of AlW does not show appreciable grain size dependence after RTA. It is concluded that the decrease of resistivity after RTA is due to the increase of grain size. The annealed AlW is found to be hillock free. And for investigating chemical attack in TFT-LCD etching processing the electric potential of AlW alloy for Ag/AgCl were investigated by cyclic voltammetry. When W wt.% of AlW alloy was higher than about 3%, the electric potential of AlW was more positive than ITO's. Therefore AlW alloy thin film can be propose to use for data bus line.

• Korean Journal of Materials Research
• /
• v.24 no.12
• /
• pp.645-651
• /
• 2014

GaN is most commonly used to make LED elements. But, due to differences of the thermal expansion coefficient and lattice mismatch with sapphire, dislocations have occurred at about $109{\sim}1010/cm^2$. Generally, a low temperature GaN buffer layer is used between the GaN layer and the sapphire substrate in order to reduce the dislocation density and improve the characteristics of the thin film, and thus to increase the efficiency of the LED. Further, patterned sapphire substrate (PSS) are applied to improve the light extraction efficiency. In this experiment, using an AlN buffer layer on PSS in place of the GaN buffer layer that is used mainly to improve the properties of the GaN film, light extraction efficiency and overall properties of the thin film are improved at the same time. The AlN buffer layer was deposited by using a sputter and the AlN buffer layer thickness was determined to be 25 nm through XRD analysis after growing the GaN film at $1070^{\circ}C$ on the AlN buffer CPSS (C-plane Patterned Sapphire Substrate, AlN buffer 25 nm, 100 nm, 200 nm, 300 nm). The GaN film layer formed by applying a 2 step epitaxial lateral overgrowth (ELOG) process, and by changing temperatures ($1020{\sim}1070^{\circ}C$) and pressures (85~300 Torr). To confirm the surface morphology, we used SEM, AFM, and optical microscopy. To analyze the properties (dislocation density and crystallinity) of a thin film, we used HR-XRD and Cathodoluminescence.