• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.259-270
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• 1997

Reaction kinetics for the solid-state reaction of $\alpha-Al_2O_3$ with amorphous $TiO_2$ to produce $Al_2TiO_5$ (Tialite) was studied in the temperature range of $1200~1300^{\circ}C$. Rate of kinetic reaction were determined by using $TiO_2$-coated $Al_2O_3$ compact containing 50 mol% $TiO_2$ and heating the reactant mixtures in MgO at definite temperature for various times. Amount of products and unreacted reactants were determined by X-ray diffractometry. Data from the volume fraction and ratio of peak intensities of $\beta-Al_2TiO_5$ indicated that the reaction of $\alpha-Al_2O_3$ with $TiO_2$ to form pseudobrookite starts between 1280 and $1300^{\circ}C$. The activation energy for solid-state reaction was determined by using the Arrhenius equation ; The activation energy was 622.4 kJ/mol.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.37-42
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• 2000

The comparative study of texture of Al/Ti thin films deposited on low-dielectric polymer and $SiO_2$substrates has been investigated. Fifty-nm-thick Ti films and 500-nm-thick Al-1%Si-0.5%Cu (wt%) films were deposited sequentially onto low-k polymers and $SiO_2$by using a DC magnetron sputtering system. The texture of Al thin film was determined using X-ray diffraction (XRD) theta-2theta ($\theta$-2$\theta$) and rocking curve and the microstructure of Al/Ti films on low-k polymer and $SiO_2$substrates was characterized by cross-sectional transmission electron microscopy (TEM). Both the $\theta$-2$\theta$ method and rocking curve measurement suggest that Al/Ti thin films deposited on $SiO_2$have stronger texture than those deposited on low-k polymer. The texture of Al thin films strongly depended on that of Ti films. Cross-sectional TEM revealed that grains of Ti films on $SiO_2$substrates had grown perpendicular to the substrate, while the grains of Ti alms on SiLK substrates were formed randomly. The lower degree of (111) texture of Al thin films on low-k polymer was due to Ti underlayer.

• Journal of Industrial Technology
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• v.20 no.A
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• pp.239-245
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• 2000

Sintered $Al_2TiO_5$ has a very low thermal expansion and an infrared radiative selectively emitting large amounts of far infrared rays. However, it is week in mechanical strength. Spectral infrared emittance, thermal expansion coefficient, and mechanical strength of $Al_2TiO_5$-clay composites were studied to develop a material for far infrared radiators. The composites containing 10~50 mass% Jungsan clay had high emittance in the range of 2,000~500cm-1. The bending strength of the $Al_2TiO_5$-clay composites increased with increasing clay content. The $Al_2TiO_5$-clay composites with a clay content of 50mass% and heat-treated at $1,200^{\circ}C$ had a large strength for infrared radiators ; 86MPa. The average linear thermal expansion coefficient from $200{\sim}1,000^{\circ}C$ of the 50mass% jungsan clay containing compo sited heat-treated at $1,200^{\circ}C$ was lower than $3.87{\times}10-6/^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.372-377
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• 2013

Machinable SiC ceramics are prepared with the addition of $Al_2TiO_5$. Ready-to-press SiC and $Al_2TiO_5$ powders are mixed and pressureless sintered at $1750^{\circ}C$ and $1850^{\circ}C$ for 1 h. The weight ratios of the SiC and $Al_2TiO_5$ powders are 100 : 0, 100 : 10, and 100 : 20. After sintering, only SiC peaks are detected in the X-ray diffraction analyses. The density, strength, and grain size of the SiC increase with increases in the $Al_2TiO_5$ content and sintering temperature. The $Al_2TiO_5$-doped specimens are easy to micro-hole machine. Based on the density and strength data, the ceramics sintered at $1850^{\circ}C$ can be used as machinable ceramics.

• Journal of the Korean Ceramic Society
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• v.34 no.9
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• pp.921-926
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• 1997

Two NbCx-C1-x/Y2O3/Ti sputter-coated Al2O3 substrates (L 5.5 cm$\times$W 0.5 cm) were diffusion bonded together using hot press method at 95$0^{\circ}C$ for 3 hours under 1 MPa of applied pressure. 4 points bending tests were used to evaluate the mechanical performance of these precracked laminate beams. Two types of mechanical responses were observed: crack penetration through the interface for x=0.75, 1 and crack deflection into an interface for x=0.25, 0.5. The Al2O3/NbCx-C1-x/Y2O3/Ti system suggested here has been proves to be effective for the thermokinetical stability and tailorability of the interfaces of Al2O3/Ti composites at 95$0^{\circ}C$.

• The Korean Journal of Ceramics
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• v.5 no.1
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• pp.44-49
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• 1999

In order to improve the oxidation resistance of $Ti_3Al$, Ti-25at.%Al composites containing dispersed particles of 15wt.%SiC were prepared by a tubular mixing-spark plasma sintering method. The sintered composites had $Ti_3Al$, SiC, $Ti_5Si_3$ and TiC. The presence of $Ti_5Si_3$ and TiC indicates that some of SiC particles reacted with Ti to from more stable phases. From oxidation tests at 800, 900 and $1000^{\circ}C$ under 1 atm of pure oxygen, it was found that the oxidation rate of Ti3Al was effectively reduced by the addition of SiC. The scale was primarily composed of an outer $TiO_2$ layer having some $Al_2O_3 $islands, an intermediate relatively thick $Al_2O_3 $ layer, and an inner $TiO_2+Al_2O_3+SiO_2$ mixed layer. Beneath the scale, Kirkendall voids were seen.

• Journal of the Korean Ceramic Society
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• v.36 no.4
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• pp.425-431
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• 1999

• Transactions of Materials Processing
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• v.8 no.3
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• pp.319-319
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• 1999

From isothermal and cyclic oxidation tests on thermomechanically treated Ti-5%Al, Ti47%Al-4%Cr, and Ti-48%Al-2%Cr-2%Nb alloys at 800, 900, 1000℃ in air, it was found that Ti-48%Al-2%Cr-2%Nb and Ti-47%Al-4%Cr had the best and the worst oxidation resistance, respectively. The oxide scales consisted primarily of TiO₂and Al₂O₃, with and without a small amount of dissolved Cr and 7b ions, depending on the alloy composition. These ions were slightly enriched inside the inner oxide layer, and strongly enriched around the scale-matrix interface. The outer TiO₂-rich layer was formed by the outward diffusion of Ti ions, while the inner (TiO₂+A1₂O₃,) mixed layer was formed by the inward transport of oxygen. The outward movement of Al ions farmed the intermediate Al₂O₃-rich Iayer, above talc prepared alloys.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.438-444
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• 1989

The role of TiC and the effect of Y2O3 addition on the densification, microstructure and mechanical properties of Al2O3-TiC composite have been studied. The amount of Y2O3 has been varied from 0 to 2 wt.% while keeping the TiC content at 10, 20 or 30 wt.%. The powder compacts have been sintered at 1,75$0^{\circ}C$ for various times in 1 atm Ar atmosphere and hot isostatically pressed (HIPed) at 1,$600^{\circ}C$ for 0.5h under 1,500atm Ar. Considerable increase in sintered density(over 95%) has been achieved by adding 0.5 wt.% Y2O3 in specimens containing high TiC volume. More addition of Y2O3 does not affect the densification. With increasing the sintering time from 0.5 to 4h, slight increase in density results. The growth of Al2O3 grain has been enhanced by Y2O3 addition ; this tendency is reduced with increasing TiC content because of grain boundary dragging effect of TiC particles. The hardness of specimens increases considerably by an addition of 0.5wt.% Y2O3 owing to the density increase. Further addition of Y2O3 has no effect on hardness. Fracture toughness augments with TiC content by crack deflection around the particles. By adding 0.5wt.% Y2O3, all the specimens can be densified to isolated pore stage and thus can be HIPed to full densification and better mechanical property. In particular, the fracture toughness of Al2O3-30 TiC specimen increases about 50% by HIPing. Fully dense Al2O3-30 TiC with good mechanical properties can be prepared by normal Sintering/HIPing process.

• Journal of the Semiconductor & Display Technology
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• v.16 no.1
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• pp.1-5
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• 2017

Encapsulation of organic based devices is essential issue due to easy deterioration of organic material by water vapor. Thin layer of encapsulation film is required to preserve transparency yet protecting materials in it. Atomic layer deposition(ALD) is a promising solution because of its low temperature deposition and quality of the deposited film. $Al_2O_3$ or $Al_2O_3/TiO_2/Al_2O_3$ multilayer film has shown excellent environmental protection characteristics despite of thin thicknesses of the films. $Al_2O_3/TiO_2/Al_2O_3$ multilayer and 1.5 dyad layer of $Al_2O_3/polymer/Al_2O_3$ deposited by ALD was measured to have water vapor transmittance rate(WVTR) well below the detection limit($5.0{\times}10^{-5}g/m^2day$) of MOCON Aquatran 2 equipment.