• 한국재료학회지
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• 제3권1호
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• pp.33-42
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• 1993

세라믹스를 공업분야에 응용범위를 확대하기 위한 최선의 수단으로 금속과의 복합화를 들수 있다. 금속과 복합화하는 방법중에서 세라믹스/금속접합은 부품의 제조등에 이용될 수 있는 수단으로 많은 연구가 행하여져서 이미 몇몇 부품에 대해서는 실용화가 되고 있고 현재에도 활발히 연구가 되고 있다. 따라서 본 연구에서는 여러가지 접합법중에서도 비교적 공정이 간편한 활성 브레이징법을 이용해 $Al_2$$O_3$ 와 304 스테인레스강을 접합하였으며 이때 삽입금속으로는 Cu-Ti합금을 사용하였고 접합온도 및 접합시간 범위는 각각 110$0^{\circ}C$-120$0^{\circ}C$, 0.5h-1.5h, 그리고 브레이징로 내의 분위기는 $10^{-3}$-$10^{-4}$ torr로 유지하였다. 접합후 접합부 조직에 대한 접합조건의 영향을 검토하고 반응생성물을 EDX, WDX 및 XRD을 이용해 분석하였으며 반응층형성을 위한 계면화학반응을 고찰하였다. 그 결과 알루미나와 삽입금속의 계면에서 접합을 유도하는 반응층은 T$i_2$$O_3$임을 확인할 수 있었다.

• 한국세라믹학회지
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• 제22권4호
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• pp.61-65
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• 1985

$BaTiO_3$ powders doped with $BaTiO_3$ and $Nb_2O_5$ at 9$0^{\circ}C$ for 1hr. were synthesized by Direct Wet Process. These powders were very homogeneous and fine particle size. To obtain the highe PTCR effect AST($1/3Al_2O_3$.$3/4SiO_2$.$1/4TiO_2$) and $MnO_2$ were added in the semiconduc-ting $BaTiO_3$. In this case $Bi_2O_3$ and $MnO_2$ were used in the form of $Bi(NO)_3$ and $MnCl_2$.$4H_2O$ solution for Direct Wet Process. $BaTiO_3$ doped Nb2O5 and $MnO_2$ demostrated greater PTCR effect than $BaTiO_3$ doped $Nn_2O_5$ only.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.157-160
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• 2001

We have investigated the Dielectric and Piezoelectric properties of $xPb(R_{1/2}Ta_{1/2})O_3-(1-x)Pb(Zr_{0.52}Ti_{0.48})O_3$ (R=Al,Y) solid solutions in which R ions are substituted for Al and Y ions. The maximum value of electromechanical coupling factor kp of 55% and 51% were obtained at the composition of 5mol% PAT and 5mol% PYT. However mechanical quality factor$(Q_m)$ had a minimum value of 44 and 69 at the composition of 5mol% PAT and 5mol% PYT. Also, the maximum value of piezoelectctric constant of $d_{33}(329[pC/N])$ and $d_{33}(310[pC/N])$ were obtained at the composition of 5mol% PAT and 5mol% PYT.

• The Korean Journal of Ceramics
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• 제1권3호
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• pp.137-142
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• 1995

Monodispersed $Al_2O_3-TiO_2$ Powder was prepared by metal-alkoxide hydrolsis. A homogeneous nucleation/growth occurred in the solutions containing ethanol, butanol and acetonitrile, and resulted in spherical, submicrometer-sized powder. The titania and the alumina crystals were formed at $800^{\circ}C$ and $1000^{\circ}C$, respectively. These crystala were subsequently reacted each other beyond $1320^{\circ}C$ and formed $Al_2TiO_5$. The relative densities of sintered bodies prepared with as-received powder were examined at the temperature range of 1300-$1500^{\circ}C$ and they were about 79% at $1300^{\circ}C$. The formation of aluminum titanata decreased the relative density at the temperature range of 1300-$1450^{\circ}C$, and at above $1450^{\circ}C$, the relative density started to increase again. It was observed that $\alpha-Al_2O_3$-doped aluminum titanate was more stable than pure aluminum titante at $1200^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.67-70
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• 2002

The composites were fabricated 61vol% ${\beta}$-SiC and 39vol.% $TiB_2$ powders with the liquid forming additives of 8, 12, 16wt% $Al_2O_3+Y_2O_3$ by pressureless annealing at $1650^{\circ}C$ for 4 hours to form YAG. The result of phase analysis of composites by XRD revealed ${\alpha}$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density and the Young's modulus showed the highest value of 82.29% and 54.60 Gpa for composites added with 16wt% $Al_2O_3+Y_2O_3$ additives at room temperature.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권10호
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• pp.500-503
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• 2001

The mechanical and electrical properties of the hot-pressed and pressureless annealed SiC+39vol.%$TiB_2$electroconductive ceramic composites were investigated as a function of the liquid additives of $Al_2O_3+Y_2O_3$. The result of phase analysis for the SiC+39vol.%$TiB_2$composites by XRD revealed $\alpha$-SiC(6H), $TiB_2$, and $YAG(Al_5Y_3O_{12})4 crystal phase. The relative density of SiC+39vol.%$TiB_2$ composites was increased with increased $Al_2O_3+Y_2O_3$. contents. The fracture toughness showed the highest value of $7.8 MPa.m^{1/2}$ for composites added with 12 wt % $Al_2O_3+Y_2O_3$. additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest value of $7.3\times10_{-4}\Omega.cm\; and\; 3.8\times10_{-3}/^{\circ}C$ for composite added with 12 wt% $Al_2O_3+Y_2O_3$. additives at room temperature. The electrical resistivity of the SiC+39vol.%$TiB_2$composites was all positive temperature coefficient resistance(PTCR) in the temperature ranges from $25^{\circ}C\; to\; 700^{\circ}C$.

• 한국세라믹학회지
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• 제22권6호
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• pp.37-41
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• 1985

Several $Al_2O_3$-based polycrystalline which had different dopant ratio in the range of 0.5mol% were prepared by doping pure $Cr_2O_3$, $ZrO_2$, $HfO_3$ Single crystalline which had same composition with above polycrystalline were made by means of floating zone method. This study examined the role of each dopant for enhancing the mefchanical properties of $Al_2O_3$-based Ceramics. Optical micrographs $({\times}200)$ of $Al_2O_3-Cr_2O_3$ single crystal showing not only radial crack (rc) on the specimen surface but median crack (mc) and lateral crack (lc) under surface at the edge of indentation mark. Fracture toughness of $Al_2O_3$-based Ceramics was increased with $ZrO_2$ content. Alloying effect of $Cr_2O_3$ contributed to the hardness of $Al_2O_3$ based ceramics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.252-252
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• 2007

$Al_2O_3-TiO_2$(AT)ceramics shows great promise as a dielectric material for millimeter-wave use. The sintering temperature of AT ceramics was approximately $1450^{\circ}C$ and decreased to $900^{\circ}C$ with the addition of BaCu(B2O5) (BCB) ceramic powder. The presence, of the liquid phase was responsible for the decrease of the sintering temperature. The liquid phase is considered to have a composition similar to the BaO-deficient BCB. The Q-value initially increased with the addition of BCB, but decreased considerably when a large amount of BCB was added, because of the presence of the liquid phase. Good microwave dielectric properties of $Q{\times}f\;=\;16,200\;GHz$, ${\varepsilon}_r\;=\;9$ and ${\tau}_f\;=\;-4\;ppm/^{\circ}C$ were obtained for the 20.0 mol% BCB-added AT ceramics sintered at $900^{\circ}C$ for 2 h.

• 한국세라믹학회지
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• 제38권12호
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• pp.1137-1143
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• 2001

본 연구에서는 적외선 반사체 제조를 위하여 MAS(MgO-Al$_2$O$_3$-SiO$_2$)계 유리로부터 핵행성 및 결정성장의 2단계 열처리에 의해 cordierite(2MgO.2Al$_2$O$_3$5SiO$_2$)와 rutile(TiO$_2$)을 주결정상으로 하는 결정화유리를 제조하였다. MgO-Al$_2$O$_3$-SiO$_2$3성분계 조성에 조핵제로 TiO$_2$를 첨가하여 용융법으로 유리를 제조한 후 결정화 열처리를 하여 핵생성 및 결정화 거동과 결정화유리의 결정상, 입자 크기와 확산 반사율과의 관계를 관찰하였다. 그 결과 75$0^{\circ}C$에서 3시간동안 핵생성 시킨 후 110$0^{\circ}C$/5hr 이상의 열처리 조건에서 cordierite와 rutile이 주결정상으로 석출되었으며 570~2500nm 범위에서 90% 이상의 반사율을 갖는 결정화유리를 제조하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.424-424
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• 2013

Ce3+, Sm3+, Eu3+, Tb3+ 등 희토류를 도핑한 여러 종류의 형광체는 백색 LED (white light-emitting diode), 전계방출표시소자(field emission display), 플라즈마디스플레이패널(plasma display panel), 약물 운송(drug delivery) 등 다양한 분야에서 응용되고 있다. 최근에는 졸-겔 방법(sol-gel method)을 이용하여Y2SiO5, Y3-XGdxAl5O12, SrAl2O4 등 여러 종류의 호스트 물질을 합성하여 형광체의 특성을 분석하는 연구가 활발히 진행되고 있다. 이러한 졸-겔 방법은 비교적 낮은 온도에서 간단한 공정으로 좋은 균질성과 높은 생산성을 갖도록 형광체를 제작할 수 있는 장점을 가지고 있다. 이에 본 연구에서는 졸-겔 방법을 이용하여 BaGd2TiO13구조를 제작하였고, 이러한 구조적, 광학적 특성을 분석하기 위하여 열분석기(thermal analyzer), 전계방출형주사전자현미경(field emission scanning electron microscopy), 투과전자현미경(field emission transmission electron microscopy)을 이용하였다. 이러한 졸-겔 방법을 이용하여 제작한 BaGd2TiO13 구조의 형광체 적용 연구를 통한 디스플레이 및 백색 LED 응용에 유용할 것으로 기대된다.