• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.7
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• pp.1563-1568
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• 2003

The introduction of invasive marine species of living things into new environments by ship's ballast water, attached to ships' hulls and via other vectors has been identified as one of the four greatest threats to the world's oceans by Global Environment Facility(GEF). Making use of the new technology of alpha-AL$_2$O$_3$ dielectric barrier layer, the strong electric-field gas discharge was introduced and obtained between micro-gap electrodes at high pressure (∼105㎩) of $O_2$ in air and $H_2O$ in seawater. The mixed air with $H_2O$ could be ionized and dissociated into large numbers of activated particles of OH, $O_2$＋, O(1D), HO$_2$ and so on, and then dissolved into the ballast water to form dissolved hydroxyl radical with the concentration of ∼20mg/L. Therefore, the invasive marine species was treated effectively through the hydroxyl radical dissolved pipeline of ballast water by strong electric -field discharge.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.12 s.354
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• pp.83-88
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• 2006

In this paper, we propose a new cross bar embedded structure for improvement of attenuation characteristics along the different lossy media. A general characterization procedure based on the extraction of the characteristic impedance and propagation constant for analyzing a single MIS(Metal-Insulator-Semiconductor) transmission line used and an analysis for a new substrate shielding MIS structure consisting of grounded crossbars at the interface between Si and Sio2 layer using the Finite-Difference Time-Domain(FDTD) technique is used. In order to reduce the substrate effects on the transmission line characteristics, a shielding structure consisting of grounded cross bar lines over time-domain signal has been examined. The extracted, distributed frequency-dependent transmission line parameters as well as the line voltages and currents, and also corresponding equivalent circuit parameters have been examined as function of frequency. It is shown that the quality factor of the transmission line can be improved without significant changes in the characteristic impedance and effective dielectric constant.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.6
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• pp.37-43
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• 2017

This review investigates the basic principle of physical interactions and failure mechanisms introduced in the materials and inner parts of semiconducting components under electromagnetic pulses (EMPs). The transfer process of EMPs at the semiconducting component level can be explained based on three layer structures (air, dielectric, and conductor layers). The theoretically absorbed energy can be predicted by the complex reflection coefficient. The main failure mechanisms of semiconductor components are also described based on the Joule heating energy generated by the coupling between materials and the applied EMPs. Breakdown of the P-N junction, burnout of the circuit pattern in the semiconductor chip, and damage to connecting wires between the lead frame and semiconducting chips can result from dielectric heating and eddy current loss due to electric and magnetic fields. To summarize, the EMPs transferred to the semiconductor components interact with the chip material in a semiconductor, and dipolar polarization and ionic conduction happen at the same time. Destruction of the P-N junction can result from excessive reverse voltage. Further EMP research at the semiconducting component level is needed to improve the reliability and susceptibility of electric and electronic systems.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.33 no.1
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• pp.329-336
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• 2013

The infrastructure of flexible pavement is composed of aggregate subbase, anti-frost layer, and subgrade. In particular, the subgrade performance is affected by climates such as frost action and precipitation. The method of TDR(Time Domain Reflectometry) sensors to measure moisture contents in subgrade layer has been used in the research. Due to the TDR method using dielectric permitivity of soil and water, the sensors can be affected by the low subgrade temperatures. The air temperatures frequently drops below $-20^{\circ}C$ in the winter in Korea. As a result, it is necessary to estimate the accuracy of the TDR moisture sensors in the range of below zero temperatures. In this study, the subgrade temperatures of lower than $-2^{\circ}C$ were extended to evaluate temperature sensitivity of the TDR moisture sensors. The test results revealed that the moisture contents around the sensors were reduced while those of the upper part of specimen showed a tendency to increase as the specimen surface temperature drops below zero under the volumetric moisture contents(VMC) of 20% and 30%. However, the impact of temperature on the function of the sensor at lower water contents was found to be negligible if any.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.40 no.3
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• pp.285-294
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• 2020

This study investigated the use of Ground Penetrating Radar (GPR) over a two-decade period on public roads, focusing on the electromagnetic characteristics of the pavement dielectrics and attenuation. From the results, a typical range of characteristic value, influencing factors, and a correction method were suggested. The typical dielectrics of asphalt pavements were 4-7, as measured by an air-coupled 1 GHz GPR antenna. The dielectrics of concrete pavements were very large in the early age, but were drastically reduced with ageing. Ten years on, collection was in the range of 6-12. The dielectrics were proportional to the relative humidity (R.H.) of the atmosphere. The effects were reduced to one eighth with an overlay. Attenuation generally increased with thickness of the road layer, and also increased where there was damage. The GPR results could also vary depending on the weather conditions as well as on the characteristics of the GPR equipment, even at the same frequency. Therefore, GPR surveys should be performed on road surfaces without debris on a single, fine day. The reliability of the GPR analysis could be improved by cores and equipment calibration with other non-destructive test surveys.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.395-403
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• 2006

It is known that $MgAl_2O_4$ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of $MgAl_2O_4$ and $MgAl_2O_4/MgO$ layers as dielectric protection layers for AC- PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and $MgAl_2O_4$ films both with a thickness of $1000\AA$ and $MgAl_2O_4/MgO$ film with a thickness of $200/800\AA$ were grown on the Cu substrates using the electron beam evaporation. $1000\AA$ thick aluminium layers were deposited on the protective layers in order to avoid the charging effect of $Ga^+$ ion beam while the focused ion beam(FIB) is being used. We obtained sputtering yieds for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found th show $24{\sim}30%$ lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated $Ga^+$ ion beam with energies ranged from 10 kV to 14 kV. And $MgAl_2O_4$ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the ${\gamma}$- FIB. $MgAl_2O_4/MgO$ and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated $Ne^+$ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and $MgAl_2O_4/MgO$ protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that $MgAl_2O_4/MgO$ protective layer has superior hardness and degradation resistance properties to MgO protective layer.

• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.154-162
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• 1998

A planar Bi-Sb multijunction thermal converter with high thermal sensitivity and small ac-dc transfer error has been fabricated by preparing the bifilar thin film Pt-heater and the hot junctions of thin film Bi-Sb thermopile on the $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$-diaphragm, which functions as a thermal isolation layer, and the cold junctions on the dielectric membrane supported with the Si-substrate, which acts as a heat sink, and its ac-dc transfer characteristics were investigated with the fast reversed dc method. The respective thermal sensitivities of the converter with single bifilar heater were about 10.1 mV/mW and 14.8 mV/mW in the air and vacuum, and those of the converter with dual bifilar heater were about 5.1 mV/mW and 7.6 mV/mW, and about 5.3 mV/mW and 7.8 mV/mW in the air and vacuum for the inputs of inside and outside heaters, indicating that the thermal sensitivities in the vacuum, where there is rarely thermal loss caused by gas, are higher than those in the air. The ac-dc voltage and current transfer difference ranges of the converter with single bifilar heater were about ${\pm}1.80\;ppm$ and ${\pm}0.58\;ppm$, and those of the converter with dual bifilar heater were about ${\pm}0.63\;ppm$ and ${\pm}0.25\;ppm$, and about ${\pm}0.53\;ppm$ and ${\pm}0.27\;ppm$, respectively, for the inputs of inside and outside heaters, in the frequency range below 10 kHz and in the air.