• Title/Summary/Keyword: Ag2S

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잉크젯 프린팅된 Ag S/D 전극을 가진 a-IGZO TFT의 제작과 그 특성 분석

  • Kim, Jeong-Hye;Kim, Jun-U;Lee, Gwang-Jun;Jeong, Seung-Jun;Jeong, Jae-Uk;Choe, Byeong-Dae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.427-427
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    • 2013
  • 잉크젯 프린팅 방법은 전도성 고분자 물질을 잉크 재료로 사용하여 전자 소자의 전극 패턴을 형성할 수 있으며 비접촉, drop-on-demand 공정으로 현재 많은 관심을 받고 있는 연구 분야이다. Ag는 $1.59{\mu}m{\cdot}cm$의 저항을 나타내는 가장 낮은 저항을 가지고 있는 물질 중의 하나이며, Ag 전도성 잉크는 고전도 패턴의 형성을 위해 현재 많이 사용되고 있는 물질이다. 본 연구에서는 a-IGZO 박막을 채널층으로 사용하여 Ag S/D 전극을 잉크젯 프린팅 방법으로 형성하여 산화물 트랜지스터를 제작하였다. a-IGZO 채널층은 $SiO_2$가 증착된 Si 기판위에 스퍼터링 방식으로 80 nm의 두께로 형성하였다. Ag S/D 전극은 10 pl의 카트리지가 장착된 Fujifilm Dimatix DMP 2800 장비를 사용하여 형성하였으며, 프린팅 후 $130^{\circ}C$로 20분간 열처리를 하였다. Fig. 1은 잉크젯 프린팅된 Ag S/D을 가진 a-IGZO의 트랜지스터 특성을 보여준다. 채널 W/L가 90/$50{\mu}m$ 구간에서 드레인 전압이 50 V 일때, 전계효과이동도 $0.27cm^2$/Vs, 문턱전압 6.03 V, 문턱전압 아래의 기울기 값은 2.06 V/dec를 얻었다. 이와 같은 특성은 잉크젯 프린팅 방법으로 Ag S/D 전극을 형성함으로써 산화물 TFT에서 잉크젯 프린팅 방식의 다양한 응용 가능성을 확인할 수 있었다.

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The Monohydrogen Arsenate-sensing Electrodes (Monohydrogen Arsenate 감응 전극)

  • Gwon-Shik Ihn;Il-Bae Park
    • Journal of the Korean Chemical Society
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    • v.31 no.2
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    • pp.162-167
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    • 1987
  • Four component $Ag_2S$-PbS-$PbHAsO_4-Cu_2S$ and three component $Ag_2S$-PbS-$PbHAsO_4$ electrodes have been prepared and evaluated for the direct measurement of monohydrogen arsenate. The 3.0 : 0.5 : 1.0 : 0.25 (mole ratio, $Ag_2S$:PbS:$PbHAsO_4:Cu_2S$) composition is superior in terms of potentiometric response, stability, rapidity of response and reproducibility. Testing was done over the concentration range $10^{-1}$~$10^{-4}M\;HA_SO_4^{2-}$in 0.1F NH4Ac-NH4OH buffer solution at pH 8.50 with constant ionic strength. Interfering ions were $CN^-,\;I^-,\;S^{-2}$ and $Cl^-$.

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Molecular Strands and Related Properties of Silver(Ⅰ) Triflate with 3,3'-Oxybispyridine vs 3,3'-Thiobispyridine

  • Kim, Yu-Ju;Lee, Young-A;Park, Ki-Min;Chae, Hee K.;Jung, Ok-Sang
    • Bulletin of the Korean Chemical Society
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    • v.23 no.8
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    • pp.1106-1109
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    • 2002
  • Studies on subtle spacer ligand effects of AgCF3SO3 with 3,3'-Py2X (X = O vs S) have been carried out. The reaction of AgCF3SO3 with 3,3'-Py2O and 3,3'-Py2S produces [Ag(CF3SO3)(3,3'-Py2O)] and [Ag(3,3'-Py2S)] (CF3SO3), respectively. Crystallographic characterization of [Ag(CF3SO3)(3,3'-Py2O)] (monoclinic P1, a =8.405(2) $\AA$, b = 10.714(2) $\AA$, c = 18.031(2) $\AA$, $\alpha=$ 77.36(2), $\beta=107.83(2)^{\circ}$, $\gamma=$ 66.92(2), V = 1438.0(5) $\AA3$ , Z =2,R = 0.0486) reveals that the skeletal structure is an anion-bridged double-strand. The double-strands are packed like a plywood. The framework of [Ag(3,3'-Py2S)](CF3SO3) (orthorhombic Pcab, a = 17.330(2) $\AA$, b = 8.640(1) $\AA$, c = 19.933(6) $\AA$, V = 2985(1) $\AA3$ , Z =8, R = 0.0437) is a sinusoidal single-strand. The formation of each coordination polymer appears to be primarily associated with the donating ability and the confor ma-tional energy barrier of the spacer ligands. Thermal analyses indicate that [Ag(CF3SO3)(3,3'-Py2O)] and [Ag(3,3'-Py2S)](CF3SO3) are stable up to 250 $^{\circ}C$ and 210 $^{\circ}C$, respectively. For the anion exchangeability, the nature of the spacer ligand is more significant factor than the distance of silver(Ⅰ)···triflate.

Transparent electrode performance of $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ multi-layer for PDP filter ($TiO_2$/ZnS/Ag/ZnS/$TiO_2$ 다층막의 PDP 필터용 전극 특성)

  • Oh, Won-Seok;Lee, Seo-Hee;Jang, Gun-Eik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.217-217
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    • 2010
  • 산화물유전체/금속/산화물유전체(D/M/D) 구조의 투명전극은 우수한 통전성과 투광성을 갖는 동시에 근적외선 및 전자파 차폐가 가능하여 각종 디스플레이 장치로의 응용을 위해 많은 연구가 진행 중이다. 이러한 구조의 다층막의 경우 금속층과 산화물층간 계면에서의 산소확산으로 인한 광학적, 전기적 특성 저하가 문제가 되고 있다. 본 연구에서는 층간 산소확산방지를 통해 다층막의 전기적 특성을 개선하기 위해 $TiO_2$/Ag/$TiO_2$, $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ 구조의 다층막을 DC/RF 마그네트론 스퍼터를 이용하여 제조하여 ZnS 박막이 다층막의 특성에 미치는 영향을 비교 평가하였다. 제조된 박막의 전기적, 광학적, 계면 특성을 4-point probe, Spctrophotometer, AES을 이용하여 분석하였으며 PDP필터용 전극으로의 적용 가능성을 평가하였다.

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Opto-electric properties for the $AgInS_2$ epilayers grown by hot wall epitaxy (Hot wall epitaxy법에 의해 성장된 $AgInS_2$ 박막의 광전기적 특성)

  • Lee, K.G.;Hong, K.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.267-270
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    • 2004
  • A silver indium sulfide($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high qualify crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks. are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\ddot{A}cr$, and the spin orbit splitting, $\ddot{A}so$, have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_g(T)$, was determined.

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Spectrophotometric Investigation of Silver Complex Solution with Thiomicher's Ketone

  • Hong-Wen Gao
    • Bulletin of the Korean Chemical Society
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    • v.21 no.7
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    • pp.675-678
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    • 2000
  • The reaction between silver (I) and thiomicher's ketone (TMK) was sensitive at pH 5 and 8 in the presence of non-ionic or anion surfactant. We studied the complex solution and determined the properties by beta-correction spectrophotometry, which included the complex ratio and the stability constant of the complex. The results showed that complex Ag(TMK)2 was formed in the presence of alkylphend ethoxylates (emulsifier OP) and Ag(TMK)2 was formed in the presence of sodium dodecyl benzene sulfonate (SDBS). Their real absorptivities are as follows: $\varepsilonAg(TMK)540$ = 5.23 ${\times}$ 10(4), $\varepsilonAg(TMK)2(555)$ = l.05 ${\times}$ 10(5) Lmol(-l)cm(-1) both at pH 5 and $\varepsilonAg(TMK)2(555)$ = 7,52 ${\times}$ 10(4)lmol(-1)cm(-1) at pH 8. The stability constant of complex Ag(TMK) was equal to 1.23 ${\times}$ 10(5) at pH 5 and that of Ag(TMK)2 8.29 ${\times}$ 10(9) at pH 5 and 1.15 ${\times}$ 10(11) at pH 8.

Cell Death by Polyvinylpyrrolidine-Coated Silver Nanoparticles is Mediated by ROS-Dependent Signaling

  • Kang, Kyeong-Ah;Jung, Hye-Youn;Lim, Jong-Seok
    • Biomolecules & Therapeutics
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    • v.20 no.4
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    • pp.399-405
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    • 2012
  • Silver nanoparticles (AgNPs) are widely used nanoparticles and they are mainly used in antibacterial and personal care products. In this study, we evaluated the effect of AgNPs on cell death induction in the murine dendritic cell line DC2.4. DC2.4 cells exposed to AgNPs showed a marked decrease in cell viability and an induction of lactate dehydrogenase (LDH) leakage in a time- and dose-dependent manner. In addition, AgNPs promoted reactive oxygen species (ROS)-dependent apoptosis and AgNP-induced ROS triggered a decrease in mitochondrial membrane potential. The activation of the intracellular signal transduction pathway was also observed in cells cultured with AgNPs. Taken together, our data demonstrate that AgNPs are able to induce a cytotoxic effect in DCs through ROS generation. This study provides important information about the safety of AgNPs that may help in guiding the development of nanotechnology applications.

High-Speed Shear Test Characterization of Sn-Ag-Cu-In Quaternary Solder Joint (Sn-Ag-Cu-In 4원계 무연솔더 조인트의 고속 전단 특성)

  • Kim, Ju-Hyung;Hyun, Chang-Yong
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.2
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    • pp.91-97
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    • 2014
  • With Pb-free solder joints containing Sn-Ag-Cu-based ternary alloys (Sn-1.0 wt.%Ag-0.5Cu and Sn-4.0Ag-0.5Cu) and Sn-Ag-Cu-In-based quaternary alloys (Sn-1.0Ag-0.5Cu-1.0In, Sn-1.2Ag-0.5Cu-0.4In, Sn-1.2Ag-0.5Cu-0.6In, and Sn-1.2Ag-0.7Cu-0.4In), fracture-mode change, shear strengths, and fracture energies were observed and measured under a high-speed shear test of 500 mm/s. The samples in each composition were prepared with as-reflowed ones or solid-aged ones at $125^{\circ}C$ to 500 h. As a result, it was observed that ductile or quasi-ductile fracture modes occurs in the most of Sn-Ag-Cu-In samples. The happening frequency of a quasi-ductile fracture mode showed that the Sn-Ag-Cu-In joints possessed ductile fracture properties more than that of Sn-3.0Ag-0.5Cu in the high-speed shear condition. Moreover, the Sn-Ag-Cu-In joints presented averagely fracture energies similar to those of Sn-Ag-Cu joints. While maximum values in the fracture energies were measured after the solid aging for 100 h, clear decreases in the fracture energies were observed after the solid aging for 500 h. This result indicated that reliability degradation of the Sn-Ag-Cu-In solder joints might accelerate from about that time.

Effect of annealing atmosphere on the properties of chemically deposited Ag2S thin films

  • Pawar, S.M.;Shin, S.W.;Lokhande, C.D.;Kim, J.H.
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.34.2-34.2
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    • 2009
  • The silver sulphide (Ag2S) thin films have been chemically deposited from an alkaline medium (pH 8 to 10) by using a silver nitrate and thiourea as a Ag and S ion precursor sources. Ethylene Damine tetraacetic acid (EDTA) was used as a complexing agent. The effect of annealing atmosphere such as Ar, N2+H2S and O2 on the structural, morphological and optical properties of Ag2S thin films has been studied. The annealed films were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption techniques for the structural, morphological, and optical properties, respectively. XRD studies reveal that the as-deposited thin films are polycrystalline with monoclinic crystal structure, is converted in to silver oxide after air annealing. The surface morphology study shows that grains are uniformly distributed over the entire surface of the substrate. Optical absorption study shows the as-deposited Ag2S thin films with band gap energy of 0.92eV and after air annealing it is found to be 2.25 eV corresponding to silver oxide thin films.

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Effects of Ag and Cu Additions on the Electrochemical Migration Susceptibility of Pb-free Solders in Na2SO4 Solution

  • Yoo, Y.R.;Nam, H.S.;Jung, J.Y.;Lee, S.B.;Park, Y.B.;Joo, Y.C.;Kim, Y.S.
    • Corrosion Science and Technology
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    • v.6 no.2
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    • pp.50-55
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    • 2007
  • The smaller size and higher integration of advanced electronic package systems result in severe electrochemical reliability issues in microelectronic packaging due to higher electric field under high temperature and humidity conditions. Under these harsh conditions, electronic components respond to applied voltages by electrochemical ionization of metal and the formation of a filament, which leads to short-circuit failure of an electronic component, which is termed electrochemical migration. This work aims to evaluate electrochemical migration susceptibility of the pure Sn, Sn-3.5Ag, Sn-3.0Ag-0.5Cu solder alloys in $Na_{2}SO_{4}$. The water drop test was performed to understand the failure mechanism in a pad patterned solder alloy. The polarization test and anodic dissolution test were performed, and ionic species and concentration were analyzed. Ag and Cu additions increased the time to failure of Pb-free solder in 0.001 wt% $Na_{2}SO_{4}$ solution at room temperature and the dendrite was mainly composed of Sn regardless of the solders. In the case of SnAg solders, when Ag and Cu added to the solders, Ag and Cu improved the passivation behavior and pitting corrosion resistance and formed inert intermetallic compounds and thus the dissolution of Ag and Cu was suppressed; only Sn was dissolved. If ionic species is mainly Sn ion, dissolution content than cathodic deposition efficiency will affect the composition of the dendrite. Therefore, Ag and Cu additions improve the electrochemical migration resistance of SnAg and SnAgCu solders.