• Journal of the Microelectronics and Packaging Society
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• v.24 no.1
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• pp.17-25
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• 2017

Recently, research and application for a power module have been actively studied according to the increasing demand for the production of vehicles, smartphones and semiconductor devices. The power modules based on the transient liquid phase (TLP) technology for bonding of power semiconductor devices have been introduced in this paper. The TLP bonding has been widely used in semiconductor packaging industry due to inhibiting conventional Pb-base solder by the regulation of end of life vehicle (ELV) and restriction of hazardous substances (RoHS). In TLP bonding, the melting temperature of a joint layer becomes higher than bonding temperature and it is cost-effective technology than conventional Ag sintering process. In this paper, a variety of TLP bonding technologies and their characteristics for bonding of power module have been described.

• Proceedings of the KWS Conference
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• 2010.05a
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• pp.77-77
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• 2010

본 연구에서는 Sn-3.0Ag-0.5Cu (SAC305) 무연솔더의 최적 인쇄성을 위한 PCB 및 마스크설계, 스크린프린팅 공정변수의 최적값을 실험계획법을 통해 평가하였다. 사용된 칩은 가로 0.4mm 세로 0.2mm의 0402 MLCC칩이며, 사용된 시험보드는 OSP 표면처리된 PCB이었다. 인쇄성을 판단하기 위한 공정인자는 금속마스크 두께, 마스크홀 크기, 패드크기 및 모양, 인쇄각도, 인쇄속도, 판분리속도이었다. ANOVA분석을 통해 주인자를 파악하였으며, 인쇄성에 영향을 미치는 주인자는 마스크두께와 인쇄각도임이 확인되었다. 그 후 중심 합성법을 이용하여 인쇄성 최적 조건을 확인하였다. 결과로 나타난 등고선/표면도를 통해, 마스크두께가 작을 때에는 인쇄각도가 작아야 높은 인쇄성을 갖으며, 또한 마스크 두께가 클 경우에는 인쇄각도가 커야 높은 인쇄성을 가짐을 알 수 있었다. 추가실험을 통해서 인쇄성 표면도의 정확도를 확인하였으며, 실험값은 표면도에서 표시된 인쇄성값과 비슷함을 알 수 있었다. 또한, 인쇄성이 낮은 영역과 높은 영역에서 접합강도값을 측정하였으며, 인쇄성이 좋은 영역에서 접합강도도 높음을 알 수 있었다.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.9-15
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• 2018

This paper shows the principles and characteristics of the transient liquid phase (TLP) bonding technology for power modules packaging. The power module is semiconductor parts that change and manage power entering electronic devices, and demand is increasing due to the advent of the fourth industrial revolution. Higher operation temperatures and increasing current density are important for the performance of power modules. Conventional power modules using Si chip have reached the limit of theoretical performance development. In addition, their efficiency is reduced at high temperature because of the low properties of Si. Therefore, Si is changed to silicon carbide (SiC) and gallium nitride (GaN). Various methods of bonding have been studied, like Ag sintering and Sn-Au solder, to keep up with the development of chips, one of which is TLP bonding. TLP bonding has the advantages in price and junction temperature over other technologies. In this paper, TLP bonding using various materials and methods is introduced. In addition, new TLP technologies that are combined with other technologies such as metal powder mixing and ultrasonic technology are also reviewed.

• Journal of Welding and Joining
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• v.26 no.3
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• pp.30-36
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• 2008

A flip-chip bonding system using IR laser with a wavelength of 1064 nm was developed and associated process parameters were analyzed using Taguchi methods. An infrared laser beam is designed to transmit through a silicon chip and used for transferring laser energy directly to micro-bumps. This process has several advantages: minimized heat affect zone, fast bonding and good reliability in the microchip bonding interface. Approximately 50 % of the irradiated energy can be directly used for bonding the solder bumps with a few seconds of bonding time. A flip-chip with 120 solder bumps was used for this experiment and the composition of the solder bump was Sn3.0Ag0.5Cu. The main processing parameters for IR laser flip-chip bonding were laser power, scanning speed, a spot size and UBM thickness. Taguchi methods were applied for optimizing these four main processing parameters. The optimized bump shape and its shear force were modeled and the experimental results were compared with them. The analysis results indicate that the bump shape and its shear force are dominantly influenced by laser power and scanning speed over a laser spot size. In addition, various effects of processing parameters for IR laser flip-chip bonding are presented and discussed.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.11-17
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• 2010

The electromigration phenomenon in lead-free flip-chip solder joint has been one of the serious problems. To understand the mechanism of this phenomenon, the crystallographic orientation of Sn grain in the Sn-Ag-Cu solder bump has been analyzed. Different time to failure and different microstructural changes were observed in the all test vehicle and bumps, respectively. Fast failure and serious dissolution of Cu electrode was observed when the c-axis of Sn grain parallel to electron flow. On the contrary of this, slight microstructural changes were observed when the c-axis of Sn perpendicular to electron flow. In addition, underfill could enhance the electromigration reliability to prevent the deformation of solder bump during EM test.

• Korean Journal of Metals and Materials
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• v.48 no.11
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• pp.1035-1040
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• 2010

The research efforts on GaN-based light-emitting diodes (LEDs) keep increasing due to their significant impact on the illumination industry. Surface mount technology (SMT) is widely used to mount the LED packages for practical application. In surface mount soldering both the device body and leads are intentionally heated by a reflow process. We studied on the effects of multiple reflows on microstructural variation and joint strength of the solder joints between the LED package and the substrate. In this study, Pb-free Sn-3.0Ag-0.5Cu solder and a finished pad with organic solderability preservatives (OSP) were employed. A $Cu_6Sn_5$ intermetallic compound (IMC) layer was formed during the multiple reflows, and the thickness of the IMC layerincreased with an increasing number of reflows. The shear force decreased after three reflows. From the observation of the fracture surface after a shear test, partially brittle fractures were observed after five reflows.

• Journal of Sensor Science and Technology
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• v.5 no.5
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• pp.21-29
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• 1996

A piezoresistive silicon acceleration sensor with 8 beams, utilized by an unique silicon micromachining technique using porous silicon etching method which was fabricated on the selectively diffused (111)-oriented $n/n^{+}/n$ silicon subtrates. The width, length, and thickness of the beam was $100\;{\mu}m$, $500\;{\mu}m$, and $7\;{\mu}m$, respectively, and the diameter of the mass paddle (the region suspended by the eight beams) was 1.4 mm. The seismic mass on the mass paddle was formed about 2 mg so as to measure accelerations of the range of 50g for automotive applications. For the formation of the mass, the solder mass was loaded on the mass paddle by dispensing Pb/Sn/Ag solder paste. After the solder paste is deposited, Heat treatment was carried out on the 3-zone reflow equipment. The decay time of the output signal to impulse excitation of the fabricated sensor was observed for approximately 30 ms. The sensitivity measured through summing circuit was 2.9 mV/g and the nonlinearity of the sensor was less than 2% of the full scale output. The output deviation of each bridge was ${\pm}4%$. The cross-axis sensitivity was within 4% and the resonant frequency was found to be 2.15 KHz from the FEM simulation results.

• Journal of Energy Engineering
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• v.23 no.4
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• pp.88-94
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• 2014

In this paper, Thermal Shock tests were performed varying the composition of the solder and ribbon thickness (A-type:0.2mm/60Sn40Pb, B-type:0.25mm/60Sn40Pb, C-type:0.2 /62Sn36Ag2Pb, D-type:0.25mm/62Sn36Ag2Pb) for evaluating the long-term reliability about Ribbon junction of Silicon solar cells. Thermal Shock test condition was performed during the 600cycles having $-40^{\circ}C{\sim}85^{\circ}C$ temperature range each 15 minutes; One cycle time was 30min. As a result, the initial efficiency of the A-type, B-type, and C, D-type were showed 15.0%, 15.4% and 15.8% respectively. After thermal shock test, the efficiency decreasing-rate of each type were as follow that A-type was 13.8%, B-Type was 15.4%. C-Type and D-Type was 15.3% and 16.2%, respectively. Also, degradation of surface changes and I-V characteristic curves were showed that the series resistance of the A, C-type was increased. Also, current lowering starting point of C-type shown 0.05volt[v] earlier than that of A-type. And B, D-type shown characteristics of composite lowering efficiency such as increase of series resistance, decrease of parallel resistance and cell damage. Therefore Initial solderability and efficiency of specimens using the solder with SnAgPb were superior. But, It has inferior the long-term reliability. The test was confirmed that as the ribbon thickness increases, long-term reliability of solar cell will decrease.

• Proceedings of the KWS Conference
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• 2006.10a
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• pp.136-138
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• 2006

Recently a lots of problems have observed in high densified and high integrated electronic components. One of them is ion migration phenomena, which induce the electrical short of electrical circuit. Ion migration phenomena has been observed in the field of exposing the specific environment and using for a long time. Also as the RoHS restriction was started in July 1st, 2006, Pb-free solder was utilized in electronics assemblies. In this case, it is very important to compatible between components and printed circuit board(PCB), thus surface treatment materials of PCB was changed to Sn, Sn-3.0Ag-0.5Cu, Cu. Therefore these new application become to need to reevaluate the sensitivity about electrochemical ion migration. This study was evaluated the occurrence time of electrochemical ion migration using by water drop test. We utilized PCB(printed circuit board) having a comb pattern as follows 0.1, 0.318, 0.5, 1.0 mm pattern distance. Sn-3.0Ag-0.5Cu and Sn-37Pb were electroplated on the comb pattern. 6.5V and 15.0V were applied in the comb pattern and then we measured the electrical short time causing by occurring the ion migration. In these results, we evaluate the sensitivity and derived the prediction models of ion migration occurrence time depending on the pattern materials, applied voltage and pattern spacing of PCB conductor.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.3
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• pp.9-18
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• 1999

In this study, Metallugical properties between Sn-3.5Ag, Sn-37Pb eutectic solders and Au/Ni/cu substrate according to time span above the melting point were investigated. A conventional reflow soldering machine wert used for this study and time span above the melting point was determined by changing peak soldering temperature and conveyor speed. As results, scallop type intermetallic compounds of $Ni_3Sn_4$ were formed at joint interface and no Cu-Sn compounds were found at all; Ni layer performed as a barrier for Cu diffusion. As the peak soldering temperature increased, thickness of the intermetallic compound layer increased; maximum thickness of the scallop-layer was 2.2$\mu\textrm{m}$. The shape of scallops were transformed from hemi-sphere type to elliptical shape with smaller size. Micro-hardness of the solder joint decreased as the eutectic structure of Sn-3.5Ag and Sn-37Pb increased.