• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.394.2-394.2
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• 2014

We fabricated highly transparent and flexible Ti doped In2O3 (TIO)/Ag nanowire(NW)/TIO (TAT) multilayer electrodes by linear facing target sputtering (LFTS) and brush-painting for used as flexible for anode organic solar cells(FOSCs). The characteristics of TAT transparent anode as a function of number of brush-painting cycles was also investigated. At optimized conditions we achieved highly flexible TAT multilayer electrodes with a low sheet resistance of $9.01{\Omega}/square$ and a high diffusive transmittance more than 80% in visible region as well as superior mechanical stability. The effective embedment of the Ag NW network between top and bottom TIO films led to a metallic conductivity, high transparency. Based on FE-SEM HRTEM, and XRD analysis, we can find that the Ag NW network was effectively embedded between top and bottom TIO layers due to good flexibility of Ag NW, the TAT multilayer showed superior flexibility than single TIO layer. Successful operation of FOSCs with high power conversion efficiency of 3.01% indicates that TAT hybrid electrode is a promising alternative to conventional ITO electrode for high performance FOSCs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.197-197
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• 2010

본 연구에서는 RF/DC dual 마그네트론 스퍼터 시스템을 이용하여 Glass 기판 상에 유기태양전지용 Nb-doped $TiO_2$ (NTO)/Ag/NTO 다층 투명전극을 성막하고 이 다층 투명전극을 $200^{\circ}C{\sim}700^{\circ}C$ 온도 범위에서 급속 열처리 (Rapid Thermal Annealing ; RTA)를 통하여 전기적, 광학적, 구조적 및 표면의 특성 변화를 연구하였다. Hall effect measurement, UV-Vis spectrometer, FESEM 분석을 통하여 다층투명전극의 전기적, 광학적, 표면분석을 하였고 Synchrotron 분석을 통하여 온도에 따른 구조변화를 분석하였다. 상온에서 성막된 다층투명전극은 30nm 두께의 NTO 박막 사이에 얇은 9nm의 얇은 Ag 층을 삽입한 구조로써 10ohm/square 이하의 매우 낮은 면저항과 ${\sim}10^{-5}\;ohm-cm$ 의 비저항, Anti-reflection 효과에 의해 85% 이상의 높은 광투과성을 나타내었다. RTA 온도가 증가함에 따라 전기적, 광학적 특성은 약간 향상되었고 비정질 구조를 유지함을 알 수 있었다. 그러나 높은 온도범위에서는 비정질 구조에서 Anatase 상으로 결정구조가 변화함을 알 수 있었고 전기적, 광학적 특성이 감소됨을 알 수 있었다. NTO/Ag/NTO 다층 투명전극을 유기태양전의 Anode로 적용하여 특성을 비교한 결과 RTA 온도가 증가함에 따라 유기태양전지의 효율 또한 증가하였고 최적화된 온도 조건에서 2.49% 의 높은 효율을 얻을 수 있었다. 이를 통해 우수한 특성을 나타내는 NTO/Ag/NTO 다층투명전극이 기존의 디스플레이 및 태양전지 등의 투명전극 재료로 주로 사용되어 온 ITO (Indium Tin Oxide) 를 대체 할 수 있는 재료로써의 가능성을 제시하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.286-286
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• 2007

Li이 첨가된 0.7(Ba,Sr)$TiO_3$-0.3MgO 후막 interdigital 커패시터를 연구하였다. Li이 첨가된 0.7(Ba,Sr)$TiO_3$-0.3MgO의 후막을 $Al_2O_3$ 기판 위에 형성하기 위하여 스크린 프린팅 방법을 이용하였다. $BaSrTiO_3$의 세라믹 물질은 높은 유전율(1MHz에서 500이상)과 낮은 유전 손실(1MHz에서 0.01)값을 가지고 있는 반면, $1350^{\circ}C$의 높은 온도에서 소결되는 단점이 있다. 따라서 본 연구에서는 $BaSrTiO_3$ 세라믹 물질의 유전특성을 향상시키고 $1350^{\circ}C$의 높은 소결온도를 낮추기 위해서, MgO(30wt%)와 Li(3wt%)을 $BaSrTiO_3$에 첨가하였다. 그리고 10um의 후막을 $Al_2O_3$ 기판 위에 스크린 프린팅 방법을 통해 형성한 후, 50um finger gap의 interdigital 커패시터를 Ag 전극을 이용하여 제작하였다. 샘플을 제작하기 전에, Frequency와 유전율의 상관관계를 알아보기 위해 3D simulator를 통해 시뮬레이션 하였고, 주파수와 온도별 유전 특성, 구조와 전암-전류에 대한 특성을 본 연구의 결과를 통해 토의 할 것이다.

• 한국전기전자재료학회논문지
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• 제23권6호
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• pp.477-480
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• 2010

In this study, we fabricate 3 wt% $Li_2CO_3$ doped $(Ba,Sr)TiO_3$ thick films on the Ag/Pd bottom electrode printed $Al_2O_3$ substrates for the LTCCs (low temperature co-fired ceramics) applications. From the X-ray diffraction analysis, 3 wt% $Li_2CO_3$ doped BST thick films on the Ag/Pd printed $Al_2O_3$ substrates, which sintered at $900^{\circ}C$, showed perovskite structure without any pyro phase. The dielectric properties of 3 wt% $Li_2CO_3$ doped BST thick films are measured from 1 kHz to 1 MHz. To investigate the electrical properties of 3 wt% $Li_2CO_3$ doped BST thick films, we employ the impedance spectroscopy. The complex impedance of 3 wt% $Li_2CO_3$ doped BST thick films are measured from 20 Hz to 1 MHz at the various temperatures.

• Transactions on Electrical and Electronic Materials
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• 제8권6호
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• pp.241-245
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• 2007

[ $(Ba_{0.9-x}Sr_xCa_{0.10})TiO_3$ ] (x=0.33, 0.36) powders were prepared by sol-gel method. $(Ba,Sr,Ca)TiO_3$(BSCT) thick films, undoped and doped with $MnCO_3$ and $Yb_2O_3(0.1{\sim}0.7mol%)$, were fabricated by the screen printing method on the alumina substrate. The coating and drying procedure was repeated 6-times. The Pt bottom electrode was screen printing method on the alumina substrate. These BSCT thick films were annealed at $1420^{\circ}C$ for 2 hr in atmosphere. The upper electrodes were fabricated by screen printing the Ag paste and then firing at $590^{\circ}C$ for 10 min. And then the structured and dielectric properties as a function of the doping amount of $Yb_2O_3$ were studied. As a result of the TG-DTA, exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films showed XRD patterns of typical cubic peroveskite structure. The average thickness of BSCT thick films was about $70^{\mu}m$. The curie temperature and the dielectric constant decreased with increasing $Yb_2O_3$ doped content and the relative dielectric constant of the specimen, doped with 0.5 mol% $Yb_2O_3$ at BSCT(54/36/10), showed a best value of 5018 at curie temperature.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1283-1284
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• 2007

The barium strontium calcium titanate((Ba,Sr,Ca)$TiO_3$) powders prepared by the sol-gel method and $MnCO_3$ as acceptor were mixed oxide method. The microstructure was investigated with variation of $Pr_{2}O_{3}$ amount. The BSCT powder and $Pr_{2}O_{3}$ were mixed with organic vehicle(Ferro. B75001). BSCT thick films were fabricated by the screen-printing method on alumina substrates. The bottom electrode was Pt and upper electrode was Ag, respectively. All BSCT thick films were sintered at $1420^{\circ}C$, for 2h. The result of the differential thermal analysis(DTA), exothermic peak at around $654^{\circ}C$ due to the formation of the polycrystalline perovskite phase. In the X-ray diffraction(XRD) patterns, all BSCT thick films showed the typical perovskite polycrystalline structure and no pyrochlore phase was dbserved. The microstructure investigated by scanning electron microscope(SEM). Pore and grain size of BSCT thick films were decreased with increasing amount of $Pr_{2}O_{3}$ dopant. And the average grain size and thickness of BSCT thick films doped with 0.1 mol% $Pr_{2}O_{3}$ was $3.09{\mu}m$, $60{\mu}m$, respectively. The relative dielectric constant decreased and dielectric loss decreased with increasing amount of $Pr_{2}O_{3}$ dopant, the values of the BSCT thick films no doped with $Pr_{2}O_{3}$ were 7443 and 4 % at 1 kHz, respectively.

• 마이크로전자및패키징학회지
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• 제9권1호
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• pp.29-33
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• 2002

The SrS:Cu, Ag thin film electroluminescient devices were fabricated on $AlTiO_3$/ITO/glass substrates by electron-beam evaporation. The emission spectrum of the device was about 460 nm with $\chi$=0.20, y=0.29 in the CIE color coordinator. It was found that the emission spectrum was saturated to pure blue color when Ag sensitizer was doped in SrS:CuCl phosphors. The luminance of the device was increased by increasing the sulfur pressure. The measured luminance was saturated with 430 cd/$m^2$at the applied voltage of 90 V and the maximum luminance was 580 cd/$m^2$at 110V. The polarization charge and conduction charge of the devices were found to be found to be about $3.5\mu$C/$\textrm{cm}^2$ and $7.4\mu$C/$\textrm{cm}^2$, respectively.

• 소성∙가공
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• 제15권3호
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• pp.213-219
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• 2006

To improve the strength of glass is being studied in order to contribute to weight saving of flat panel displays. Generally, the strength achieved of glass-ceramics is higher as is the fracture toughness by the formation of a heterogeneous phase inside glass. In this study, Ag-doped $45SiO_2-24CaO-24Na_2O-4P_2O_5\;and\;70SiO_2-10CaO-24Na_2O-10TiO_2$ glasses were irradiated to strengthen by crystallization using femto-second laser pulse. XRD, Nano-indenter and SEM etc., irradiation of laser pulse without heat-treated samples was analyzed. Samples irradiated by laser had higher value($4.4{\sim}4.56^*10-3Pa$) of elastic modulus which related with strength of glass than values heat-treated samples and these are $1.2{\sim}1.5$ times higher values than them of mother glass. This process can be applicable to the strengthening of thinner glass plate, and it has an advantage over traditional heat-treatment and ion-exchange method.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.193-193
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• 2012

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is the most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. Single-chamber PECVD system for a-Si:H solar cell manufacturing has the advantage of lower initial investment and maintenance cost for the equipment. However, in single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of single-chamber PECVD system. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. In order to remove the deposited B inside of the plasma chamber during p-layer deposition, a high RF power was applied right after p-layer deposition with SiH4 gas off, which is then followed by i-layer, n-layer, and Ag top-electrode deposition without vacuum break. In addition to the p-i interface control, various interface control techniques such as FTO-glass pre-annealing in O2 environment to further reduce sheet resistance of FTO-glass, thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, and hydrogen plasma treatment prior to n-layer deposition, etc. were developed. The best initial solar cell efficiency using single-chamber PECVD system of 10.5% for test cell area of 0.2 $cm^2$ could be achieved by adopting various interface control methods.