• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
• /
• pp.381-384
• /
• 2004

The stochiometric nix of evaporating materials for the $AgInS_2$ single crystal thin films were prepared from horizontal furnace. The polycrystal structure obtaind from the power x-ray diffraction was chalcopyrite. The lattice costants $a_0\;and\;c_0$ were $a_0=5.86(5.82)\;A,\;c_0=11.355(11.17)\;A$. To obtains the single crystal thin films, $AgInS_2$ mixed crystal were deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The temperates of the source and the substrate were $590^{\circ}C\;and\;450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time.

• Journal of Magnetics
• /
• 제18권4호
• /
• pp.412-416
• /
• 2013

FePt:Ag (100 nm) nanocomposite thin films were prepared on naturally-oxidized Si substrates by dc magnetron sputtering at room temperature. X-ray diffraction (XRD) and transmission electron microscopy (TEM) are used to investigate the effects of annealing pressures on the ordering processes and microstructures of these films. The average sizes for the $L1_0$ ordered domains and the FePt grains are reduced to d = 9 nm and D = 13 nm from d = 19 nm and D = 34 nm, respectively, when the annealing pressure is enhanced to 0.6 GPa from room pressure at 873 K. Furthermore, the size distribution is improved into a narrow range. With increasing pressure, the coercivity of $L1_0$-FePt:Ag thin films decreases from 15.1 to 7.6 kOe. In the present study, the effects of high pressure on the $L1_0$ ordering processes and microstructures of FePt:Ag nanocomposite films were discussed.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.69-69
• /
• 2009

In other to progress better crystallization transition and long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10 wt%, 20 wt% and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sh-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sh-doped Ge-Se-Te thin films.

• 한국전기전자재료학회논문지
• /
• 제13권6호
• /
• pp.533-537
• /
• 2000

It was known that chalcogenide glasses have the superior property of the photoinduced anisotropy(PA). In this study we observed the phenomenon of Ag polarized-photodoping in chalcogenide As$_{40}$ /Ge$_{10}$/Se$_{15}$ /S$_{35}$ and the double-layer of Ag doped As$_{40}$ /Ge$_{10}$/Se$_{15}$ /S$_{35}$ thin film using the irradiation with the polarized He-Ne laser light. The Ag polarized-photodoping results in reducing the time of saturation anisotorpy and increasing the sensitivity of linearly anisotropy intensity up to maximum 220% The Ag polrized-photodoping shows improvement of the photoinduced anisotropy property in polarized photodoping of the chalcogenide thin film. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.in film.ilm.

• 한국전기전자재료학회논문지
• /
• 제26권5호
• /
• pp.347-350
• /
• 2013

By inserting a very thin metal layer of Ag between two outer oxide layers of amorphous silicon indium zinc oxide (SIZO), we fabricated a highly transparent SIZO/Ag/SIZO multilayer on a glass substrate. In order to find the optimized thickness of Ag layers, we investigated the variation of optical properties depending on Ag thickness. It was found that the transition of Ag layer from island formation to a continuous film occurred at a critical thickness. Continuity of the Ag film is very important for optical properties in SIZO/Ag/SIZO multilayer. With about 15 nm thick Ag layer, the multilayer showed a high optical transmittance of 80% at 550 nm and low emissivity in IR.

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 1995년도 춘계연구발표회 논문개요집
• /
• pp.88-89
• /
• 1995

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 1995년도 춘계연구발표회 논문개요집
• /
• pp.106-107
• /
• 1995

• 열처리공학회지
• /
• 제25권2호
• /
• pp.85-89
• /
• 2012

Transparent conductive ZnO/Ag/ZnO (ZAZ) multilayer films were deposited by Radio frequency (RF) magnetron sputtering and direct current (DC) magnetron sputtering. The effects of post deposition vacuum annealing temperature on the structural, electrical and optical properties of the ZAZ multilayer films were investigated. The thickness of ZAZ films is kept constant at ZnO 50 nm/Ag 5nm/ZnO 45 nm, while the vacuum annealing temperatures were varied from 200 and $400^{\circ}C$, respectively. As-deposited ZAZ films exhibit a sheet resistance of $6.1{\Omega}/{\Box}$ and optical transmittance of 72.7%. By increasing annealing temperature to $200^{\circ}C$, the resistivity decreased to as low as $5.3{\Omega}/{\Box}$ and optical transmittance also increased to as high as 82.1%. Post-deposition annealing of ZAZ multilayer films lead to considerably lower electrical resistivity and higher optical transparency, simultaneously by increased crystallization of the films.

• 한국표면공학회지
• /
• 제49권6호
• /
• pp.575-579
• /
• 2016

The metal mesh films with thickness of 1.0, 1.5, $2.0{\mu}m$ were prepared by photolithography using Ag, Al, and Cu metals. Every metal films were showed C(111) preferred orientation and Ag showed the lowest resistivity and followed by Al and Cu. The transmittance of almost films were higher than 90%. But, the Ag film with thickness of $2.0{\mu}m$ was delaminated during photolithography process due to low adhesion. So, Cu and Ti metal films were introduced under Ag film to improve adhesion property. The Cu film showed higher adhesion properties compared to Ti film. Furthermore, the Ti films that deposited on Ag film showed higher acid resistance.

• 한국표면공학회지
• /
• 제55권2호
• /
• pp.91-95
• /
• 2022

ZnO single layer (60 nm thick) and ZnO with Ag interlayer (ZnO/Ag/ZnO; ZAZ) films were deposited on the glass substrates by using radio frequency (RF) and direct current (DC) magnetron sputter to evaluate the effectiveness of Ag interlayer on the optical visible transmittance and the conductivity of the films. In the ZAZ films, the thickness of ZnO layers was kept at 30 nm, while the Ag thickness was varied as 5, 10, 15 and 20 nm. In X-ray diffraction (XRD) analysis, ZnO films show the (002) diffraction peak and ZAZ films also show the weak ZnO (002) peak and Ag (111) diffraction peak. As a thickness of Ag interlayer increased to 20 nm, the grain size of the Ag films enlarged to 11.42 nm and the optical band gap also increased from 4.15 to 4.22 eV with carrier concentration increasing from 4.9 to 10.5×10²¹ cm^-3. In figure of merit measurements, the ZAZ films with a 10 nm thick Ag interlayer showed the higher figure of merit of 4.0×10^-3 Ω^-1 than the ZnO single layer and another ZAZ films. From the experimental result, it is assumed that the Ag interlayer enhanced effectively the opto-electrical performance of the ZAZ films.