• 제목/요약/키워드: Ag thin film

검색결과 377건 처리시간 0.033초

Zinc Tin Oxide 투명 박막트랜지스터의 특성에 미치는 소스/드레인 전극의 영향 (Influence of Source/Drain Electrodes on the Properties of Zinc Tin Oxide Transparent Thin Film Transistors)

  • 마대영;최무희
    • 한국전기전자재료학회논문지
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    • 제28권7호
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    • pp.433-438
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    • 2015
  • Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated by using $n^+$ Si wafers as gate electrodes. Indium (In), aluminum (Al), indium tin oxide (ITO), silver (Ag), and gold (Au) were employed for source and drain electrodes, and the mobility and the threshold voltage of ZTO TTFTs were observed as a function of electrode. The ZTO TTFTs adopting In as electrodes showed the highest mobility and the lowest threshold voltage. It was shown that Ag and Au are not suitable for the electrodes of ZTO TTFTs. As the results of this study, it is considered that the interface properties of electrode/ZTO are more influential in the properties of ZTO TTFTs than the conductivity of electrode.

Investigation of Giant Magnetoresistance in Vacuum-Annealed NiFe/Ag Discontinuous Multilayers

  • Park, Chang-Min;Kim, Young-Eok;Shin, Kyung-Ho
    • Journal of Magnetics
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    • 제2권2호
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    • pp.50-54
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    • 1997
  • The vacuum-annealed Ni80Fe20/Ag discontinuous multilayers were found to show giant magnetoresistive behaviors comparable to those of corresponding multilayers annealed at atmospheric pressure in a mixture of H2 and Ar. This vacuum-annealing process will offer potential advantages, enabling a continuous batch process from the deposition to the annealing. Their giant magnetoresistive behaviors were attributed to the magnetostatic coupling that are induced at the edges of the discontinuous magnetic grains. We also present our results about the multilayer patterned into a basic device for the magnetic field sensor.

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UV 처리에 의한 T-OLED용 산화전극에 적합한 Ag 박막연구: Nano-Mechanics 특성 분석을 중심으로 (The Study of Ag Thin Film of Suitable Anode for T-OLED: Focused on Nanotribology Methode)

  • 이규영;김수인;김주영;권구은;강용욱;손지원;전진웅;김민철;이창우
    • 한국진공학회지
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    • 제21권6호
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    • pp.328-332
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    • 2012
  • Ag (silver)의 일함수는 T-OLED (Top Emission Organic Light Emitting Diode)의 전극소자로 사용하기에는 다소 낮다는 단점이 있다(~4.3 eV). 이러한 단점을 해결하기 위한 대안으로 Ag 박막의 표면을 플라즈마, UV, 열처리를 통하여 일함수를 높이는 연구가 진행되어 왔다(~5.0 eV). 하지만 현재의 대부분 연구는 후 처리된 박막의 일함수에 초점을 맞춰 연구가 진행되어, 박막의 mechanical property에 대한 연구는 매우 부족하며 이는 T-OLED의 효율과 수명 등의 연구에 매우 중요하다. 본 논문에서는 Ag와 $AgO_x$ 박막의 mechanical property에 초점을 맞춰 분석을 실시하였다. Ag는 유리기판 위에 rf-magnetron sputter를 이용하여 100 W의 power에서 150 nm 두께로 증착되었다. 증착된 박막은 UV 램프를 이용하여 다양한 시간동안 UV 처리되었다(0~9분). 본 논문에서는 처리된 박막의 면저항을 측정하고 nano indenter, Scanning Probe Microscopy의 Atomic Force Microscopy mode를 이용하여 mechanical property를 분석하였다. 실험 결과 UV 처리 시간이 3분을 넘어가는 시편과 3분 이내의 시편은 면저항값 및 경도 값에 큰 차이가 있었다. 이러한 결과는 Ag 박막의 후처리에 따른 Ag 물질의 산화 및 결합상태에 따라 박막 내에 존재하는 stress의 영향으로 예상되어진다.

As-Te-Si-Ge 비정질박막 스위칭 소자의 전극영향에 관한 연구 (A Study on the Electrode Effect of As-Te-Si-Ge Non-Crystalline Thin film Switching Devices)

  • 박창엽;정홍배
    • 전기의세계
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    • 제25권1호
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    • pp.104-107
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    • 1976
  • The switching characteristics of Non-crystalline As-Te-Si-Ge thin film device using Ag, In and Al metal for electrode, has been investigated. Threshold voltage and holding current of each sandwich type device varied due the to formation of the potential barrier in between non crystalline solid and electrode interface.

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$AgGaSe_2$ 단결정 박막 성장과 광발광 특성 (Growth and Photoluminescience Properties for $AgGaSe_2$ Single Crystal Thin Films)

  • 홍광준;윤석진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.159-160
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    • 2006
  • $AgGaSe_2$ single crystal thin films grown by using hot wall epitaxy (HWE) system. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition ($E_x$) observable only in high quality crystal and neutral bound exciton ($D^{\circ}$,X) having very strong peak intensity. And, the full width at hall maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

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Hot Wall Epitaxy(HWE)법에 의한 $AgGaSe_2$ 단결정 박막 성장과 전기적 특성 (Growth and electrical properties for $AgGaSe_2$ epilayers by hot wall epitaxy)

  • 박창선;홍광준
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.96-97
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    • 2008
  • Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 420 $^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at 630 $^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_2$ thin films measured with Hall effect by van def Pauw method are $9.24\times10^{16}cm^{-3}$ and 295 $cm^2/V{\cdot}s$ at 293 K, respectively.

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Ag 도핑된 Sbx(Ge-Se-Te)100-x 박막의 개선된 상변화 특성

  • 남기현;김장한;정홍배
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.181-182
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    • 2011
  • Phase-change materials can be cycled by exposure to laser beam, and as a function of the pulse intensity and duration, the laser beam triggers the switching from crystalline to amorphous phase and back. In other to progress better crystallization transition and amorphization long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10, 20 and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sb-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sb-doped Ge-Se-Te thin films.

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