• Journal of Ginseng Research
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• v.14 no.3
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• pp.432-436
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• 1990

Incidence of damping-off callsed by Rhizoctonia solani was 0.6-10.9% at "Yangjik" seedbed in Pocheon, Korea. The seedbeds where the lengths of etiolated stems (underground portion) of ginseng seedlings were 0.78-1.25 cm showed 0.8-3.2% of the disease, while 6.9-10.9% disease incidence was observed at the seedbeds with the longer etiolated stem (1.89-2.26 cm). The pathogen produced a typical girdle symptom on the etiolated portion of ginseng stems close to the soil surface. The deeper the seeds were sown, the more the disease occurred in pot soil inoculated with the pathogen, AG 2-1, showing 18.4, 27.4 and 32.9% of damping-off at the seeding depth of 1, 2 and 4 cm, respectively. Cuticle layers of colored stems (over ground portion) were well - developed to be 42.8, 58.0, and 55.0 um in thickness compared to the etiolated stems with 8.5, 15.0 and 8.0um for seedling, 2 year-old, and 3 year-old ginsengs, respectively, when the disease occurred. In the seedling and 2 year-old ginseng, the colored stems were more rigid than the etiolated. There was however, no difference in rigidness of the stem of the 3 year-old ginseng where the disease is not severe as in seedlings and 2 year-old ginseng plants.ng plants.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.454-455
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• 2008

태양전지의 효율은 실리콘 자체의 특성에 의해서 결정 되거나 완성된 실리콘을 통해 태양전지를 제조하는 과정에서 웨이퍼의 두께와 도핑 농도의 조절을 통해 효율을 변화 시킬 수 있다. 높은 효율을 갖는 태양전지 설계를 위해 태양전지 시뮬레이터인 AFOS HET 프로그램을 이용하여 태양전지 웨이퍼 두께와 acceptor의 도핑 농도를 조절하였다. 최적화 결과 80nm ZnO, $300{\mu}m$ c-Si(p), 1nm a-Si(i), 1nm a-Si(n), $1{\mu}m$ Ag, acceptor의 도핑 농도 $7\times10^{16}cm^{-3}$ 에서 $V_{oc}$=697.7mV, $J_{sc}$=42.15mA/$cm^2$, $P_{max}$=0.0247W/$cm^2$, FF=83.51%, Eff=24.56%의 고효율을 얻을 수 있다. 본 연구를 통하여 태양전지 설계나 제조 시에 연구비를 절감할 수 있고 높은 효율의 태양전지로 접근할 수 있다.

• Journal of the Optical Society of Korea
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• v.18 no.4
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• pp.307-316
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• 2014

Improved power conversion efficiency of hybrid solar cells with ITO/ZnO seed layer/ZnO NRs/ZnS QDs/P3HT/PCBM/Ag structure was obtained by optimizing the growth period of ZnO nanorods (NRs). ZnO NRs were grown using a hydrothermal method on ZnO seed layers, while ZnS quantum dots (QDs) (average thickness about 24 nm) were fabricated on the ZnO NRs by the successive ionic layer adsorption and reaction (SILAR) technique. Morphology, crystalline structure and optical absorption of layers were analyzed by a scanning electron microscope (SEM), X-ray diffraction (XRD) and UV-Visible absorption spectra, respectively. The XRD results implied that ZnS QDs were in the cubic phase (sphalerite). Other experimental results showed that the maximum power conversion efficiency of 4.09% was obtained for a device based on ZnO NR10 under an illumination of one Sun (AM 1.5G, $100mW/cm^2$).

• Tribology and Lubricants
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• v.10 no.3
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• pp.18-28
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• 1994

Sliding friction between a spherical pin of 8mm in diameter and flat (disk) substrates coated with vacuum-deposited thin film was measured under ultra high vacuum pressure for various materials, various rates of film supply (8~210 nm/min), various sliding velocities (1.5~67.0 mm/s). It was found that the most effective lubrication was obtained when the adhesion between $Si_3N_4$ pin and SUS440C disk was high and that between $Si_3N_4$ pin and $Si_3N_4$ disk was low. When In film was used as a lubricant between $Si_3N_4$ pin and stainless steel disk, the friction coefficient had a value as low as 0.04. In this case, the normal load W and the sliding speed V were expressed as 10N and 24 mm/s for $10^{-6}Pa$. The dependence of $\mu$ on the thickness h of the Ag film, which was used as a lubricant between $Si_3N_4$ pin and SUS440C (Q) disk was expressed as $\mu$=0.12 for W=10N and V=24mm/s when the film was thicker than 100nm. A brief discussion on these relations is presented from the viewpoint of the real contact area.

• Journal of Welding and Joining
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• v.27 no.1
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• pp.85-89
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• 2009

Reflow process conditions were investigated for 0402 electric parts with Sn-3.0Ag-0.5Cu solders. Circle hole shape metal mask with 100 m thickness showed excellent printability. Self alignment abilities were 71% for 1005 chips, 52% for 0603 chips, and 3% for 0402 chips. Average joining strengos were 1990 gf for 1005 chips, 867 gf for 0603 chips, and 525 gf for 0402 chips. As mis-mounting angle increased, joining strength decreased. Considering self-alignment ability, mounting angle had to be under $5^{\circ}$ and contact area of the chips had to be over 40% for Pb-free soldering process for 0402 chips.

• Journal of the Korean Ceramic Society
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• v.56 no.4
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• pp.394-398
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• 2019

In this paper, the joining characteristics of GDC-LSM ceramics with Crofer 22 APU metal alloys was investigated at different brazing temperatures and holding times by reactive air brazing. Brazing was performed using Ag-10 wt% CuO filler, at three different temperatures (1000, 1050, and 1100℃ for 30 minutes) as well as for three different holding times (10, 30, and 60 minutes at 1050℃). The interfacial microstructures were examined by scanning electron microscopy and the joining strengths were assessed by measuring shear strengths at room temperature. The results show that with increasing brazing temperature and holding time, joint microstructure changed obviously and shear strength was decreased. Shear strength varied from a maximum of 100±6 MPa to a minimum of 18±5 MPa, depending on the brazing conditions. These changes were attributed to an increase in the thickness of the oxide layer at the filler/metal alloy interface.

• Tribology and Lubricants
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• v.18 no.1
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• pp.1-8
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• 2002

Nano adhesion and friction between a $Si_{3}N_{4}$ AFM(atomic force microscope) tip and thin silver films were experimentally studied. Tests were performed to measure the nano adhesion and friction in both AFM and LFM(lateral force microscope) modes in various range of normal loads. Thin silver films deposited by IBAD (ion beam assisted deposition) on Si-wafer (100) and other Si-wafers of different surface roughness were used. Results showed that nano adhesion and friction decreased with the surface roughness. When the Si surfaces were coated by pure silver, the adhesion and friction decreased. But the adhesion and friction were not affected by the thickness of IBAD silver coating. As the normal force increased, the adhesion forces of bare Si-wafer and IBAD silver coating film remained constant, but the friction forces increased linearly. Test results suggested that the friction was mainly governed by the adhesion as long as the load was low.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.287-287
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• 2010

We report a new direct patterning method, called liquid bridge-mediated nanotransfer molding (LB-nTM), for the formation of two- or three-dimensional structures with feature sizes between tens of nanometers and tens of micron over large areas. LB-nTM is based on the direct transfer of various materials from a mold to a substrate via a liquid bridge between them. This procedure can be adopted for automated direct printing machines that generate patterns of functional materials with a wide range of feature sizes on diverse substrates. Arrays of TIPS-PEN TFTs were fabricated on 4" polyethersulfone (PES) substrates by LB-nTM using PDMS molds. An inverted staggered structure was employed in the TFT device fabrication. A 150 nm-thick indium-tin oxide (ITO) gate electrode and a 200 nm-thick SiO2dielectric layer were formed on a PES substrate by sputter deposition. An array of TIPS-PEN patterns (thickness: 60 nm) as active channel layers was fabricated on the substrate by LB-nTM. The nominal channel length of the TIPS-PEN TFT was 10 mm, while the channel width was 135 mm. Finally, the source and drain electrodes of 200 nm-thick Ag were defined on the substrate by LB-nTM. The TIPS-PEN TFTs can endure strenuous bending and are also transparent in the visible range, and therefore potentially useful for flexible and invisible electronics.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.20 no.2
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• pp.187-192
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• 2011

UBM(Under Bump Metallurgy) is very important for successful realization of Flip-Chip technology. In this study, it is investigated the interfacial reactions between various Sn-Ag solder alloys and Ni-P/Au UBM and Cu plate finish. It is also evaluated the shear strength by using the micro shear-punch test method for Sn-37Pb alloy, binary and ternary alloys of environment-friendly Pb-free solder alloys which are applied in the electronic packages. In terms of interfacial microstructure, the Pb-free solder joints have thicker IMCs than the Sn-Pb solder joints. The thickness of IMC is related to Reflow time. The IMC has been observed to grow with the increase in Reflow time. As a result of the shear test, in case of Max. shear strength, Pb-free solder showed the highest strength value and Sn-37Pb showed the lowest strength value 10 be generally condition of Reflow time.

• Journal of Powder Materials
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• v.19 no.4
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• pp.271-277
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• 2012

$SnO_2$ nanotubes were successfully synthesized using an electrospinning technique followed by calcination in air. The nanotubes were the single phase nature of $SnO_2$ and consisted of approximately 14 nm nanocrystals. SEM and TEM characterizations demonstrated that uniform hollow fibers with an average outer diameter of around 124 nm and wall thickness of around 25 nm were successfully obtained. As anode materials for lithium ion batteries, the $SnO_2$ nanotubes exhibited excellent cyclability and reversible capacity of $580mAhg^{-1}$ up to 25 cycles at $100mAg^{-1}$ as compared to $SnO_2$ nanoparticles with a capacity of ${\sim}200mAhg^{-1}$. Such excellent performance of the $SnO_2$ nanotube was related to the one-dimensional hollow structure which acted as a buffer zone during the volume contraction and expansion of Sn.