• Korean Journal of Optics and Photonics
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• v.21 no.4
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• pp.175-178
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• 2010

A transmission type color filter based on a thin film Ag-$SiO_2$-Ag etalon was proposed and realized in a quartz substrate. The device could acquire infrared suppressed transmission and wide effective area compared to costly e-beam lithography and laser interference lithography. The FDTD method was introduced to take into account the effect of the dispersion characteristics of the silver metal and the thickness thereof. Three different color filters were devised: The cavity length for the red, green and blue filters were 160 nm, 130 nm, and 100 nm respectively, with the metal layer unchanged at 25 nm. The observed center wavelengths were measured at 650 nm, 555 nm, and 480 nm for the red, green, and blue devices; the corresponding bandwidths were about 120 nm, 100 nm, and 120 nm; and the peak transmission for all was ~60%. Finally the relative transmission was measured to decline with the angle of the incident beam with the rate of 1%/degree.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.269-277
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• 1998

The crystallization method determines the material quality and consequent device performance. This paper investigates the crystallization of a-Si:H films on various substrate materials and analyzes the crystallization effect with and without using eutectic forming metals. From the examinations of the various substrate materials, a metal Mo was selected for the a-Si:H films growth and subsequent crystallization of it. For a sample without any eutectic metal layer, we observed grain size of $0.8{\mu}m$ after $1100^{\circ}C$ anneal treatment. To reduce crystallization temperature, we used some of the eutectic forming metals such as Au, Al and Ag. Poly-Si films with grain size over $10{\mu}m$ and (111) preferential plains were achieved using a premetal layer of Au at an anneal temperature of $700^{\circ}C$. The various crystallization effects of eutectic metal thickness and type were investigated for photovoltaic (PV) device applications.

• The Journal of Korean Academy of Prosthodontics
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• v.37 no.5
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• pp.597-606
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• 1999

This study was performed to evaluate the effect of aging and thermal cycling on the biaxial flexure strength of low commercially available veneering resin composites for crown(Dentacolor : DC, Artglass : AG, Esternia : ET and Targis : TG). Disc specimens were fabricated in a teflon mold giving 12mm in diameter and 1mm in thickness. All samples were divided into 4 groups. Group 1 was dried in a dessicator at $25^{\circ}C$ for 30 days. Group 2 was immersed in distilled water at $37^{\circ}C$ for 30 days. Group 3 was immersed in distilled water at $65^{\circ}C$ for 30 days. Group 4 was subjected to 10,000 thermal cycles between $5^{\circ}C\;and\;55^{\circ}C$, and the immersion time in each bath was 15 seconds per cycle. Biaxial flexure test was conducted using the ball-on-three-ball method at the cross head speed of 0.5mm/min and fracture surfaces were observed with scanning electoron microscope. The results obtained were summarized as follows; 1. Weibull modulus values, except for the AG group, decreased after thermal cycling treatment. 2. Biaxial flexure strength values of aging group at $37^{\circ}C$ were the lowest in all sample groups. Except for the DC group, strength values were significantly decreased for the drying group. 3. After thermal cycling test, the highest value of biaxial flexure strength of 188.8 MPa was observed in the ET group and the lowest value of 73.2 MPa was observed in the DC group. The strength values showed the significant differences in each group (p<0.05). 4. Observation of surfaces after thermal cycling test revealed the ditching in the part of surrounding large fillers.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.100-100
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• 2011

Nanomaterial architecture with highly ordered, vertically oriented $TiO_2$ nanotube arrays shows a good promise for diverse technological applications. As inspired from the literature reports that Nickel modification can improve the photocatalytic activity of $TiO_2$, it was planned to coat Ni into the $TiO_2$ matrix. In this study, first $TiO_2$ nanotubes(TiNTs) were prepared by anodization (60V,3min) in HF-free aqueous electrolyte on ultrasonically cleaned polished titanium sheet substrates ($1{\times}7cm^2$). The typical thickness of the sintered TiNT ($500^{\circ}C$for10min) was ~1 micronas confirmed from the FESEM study. In the next part, as-anodized and sintered TiNT/Ti photoanodes were used to coat Ni by AC electrodeposition from aqueous 0.1M nickel sulphate solution. During AC electrodeposition, conditions such as 1V DC offset voltage, 9V amplitude (peak-to-peak) and 750 Hz frequency were fixed constant and the deposition time was varied as 0.5 min, 1 min, 2 min and 10 min. The photoelectrochemical performance of pristine and Ni modified TiNT/Ti photoanodes was measured in 1N NaOH electrolyte under 1 SUN illumination in the potential range of -1V and 1.2V versus Ag/AgCl reference electrode. The photocurrent performance of TiNT/Ti photoanode decreased upon Ni modification and the results were confirmed after repeated experiments. This suggests us that Ni modification inhibits the photoelectrochemical performance of $TiO_2$ nanotubes.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.76-76
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• 2011

Polymer-fullerene based bulk heterojunction (BHJ) solar cells can be fabricated in large area using low-cost roll-to-roll manufacturing methods. However, because of the low mobility of the BHJ materials, there is competition between the sweep-out of the photogenerated carriers by the built-in potential and recombination within the thin BHJ film [12-15]. Useful film thicknesses are limited by recombination. Thus, there is a need to increase the absorption by the BHJ film without increasing film thickness. Metal nanoparticles exhibit localized surface plasmon resonances (LSPR) which couple strongly to the incident light. In addition, relatively large metallic nanoparticles can reflect and scatter the light and thereby increase the optical path length within the BHJ film. Thus, the addition of metal nanoparticles into BHJ films offers the possibility of enhanced absorption and correspondingly enhanced photo-generation of mobile carriers. In this work, we have demonstrated several positive effects of shape controlled Au and Ag nanoparticles in organic P3HT/PC70BM, PCDTBT/PC70BM, Si-PCPDTBT/PC70BM BHJ-based PV devices. The use of an optimized concentration of Au and Ag nanomaterials in the BHJ film increases Jsc, FF, and the IPCE. These improvements result from a combination of enhanced light absorption caused by the light scattering of the nanomaterials in an active layer. Some of the metals induce the plasmon light concentration at specific wavelength. Moreover, improved charge transport results in low series resistance.

• Nuclear Engineering and Technology
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• v.51 no.8
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• pp.1983-1990
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• 2019

Spray deposited Molybdenum trioxide (MoO₃) thin film of thickness nearly 379 nm were irradiated with 200 MeV Ag¹⁵⁺ ion beam at different fluences (Ø) of 5 ×10¹¹, 1 × 10¹², 5 × 10¹² and 1 × 10¹³ ions/㎠. The X-ray diffraction (XRD) pattern of the pristine film confirms orthorhombic structure and the crystallinity decreased after irradiation with the fluence of 5 × 10¹¹ ions/㎠ due to irradiation induced defects and became amorphous at higher fluence. In pristine film, Raman modes at 665, 820, 996 cm^-1 belong to Mo-O stretching, 286 cm^-1 belong to Mo-O bending mode and those below 200 cm^-1 are associated with lattice modes. Raman peak intensities decreased upon irradiation and vanished completely for the ion fluence of 5 ×10¹² ions/㎠. The percentage of optical transmittance of pristine film was nearly 40%, while for irradiated films it decreased significantly. Red shift was observed for both the direct and indirect band gaps. The pristine film surface had densely packed rod like structures with relatively less porosity. Surface roughness decreased significantly after irradiation. The electrical transport properties were also studied for both the pristine and irradiated films by Hall effect. The results are discussed.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.44-51
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• 2013

For preparing a device-quality $CuInSe_2$ (CISe) light-absorbing layer by single-bath electrodeposition for a superstrate-type CISe cell, morphological properties of the CISe layers were investigated by varying concentrations of sulfamic acid and potassium biphthalate, complexing/buffering agents. CISe films were grown on an $In_2Se_3$ film by applying a constant voltage of -0.5V versus Ag/AgCl for 90 min in a solution with precursors of $CuCl_2$, $InCl_3$, and $SeO_2$, and a KCl electrolyte. A dense and smooth layer of CISe could be obtained with a solution containing both sulfamic acid and potassium biphthalate in a narrow concentration range of combination. A CISe layer prepared on the $In_2Se_3$ film with proper concentrations of complexing/buffering agents exhibited thickness of $1.6{\sim}1.8{\mu}m$ with few undesirable secondary phases. On the other hand, when the bath solution did not contain either sulfamic acid or potassium biphthalate, a CISe film appeared to contain undesirable flake-shape $Cu_{2-x}Se$ phases or sparse pores in the upper part of film.

• Journal of the Korean Applied Science and Technology
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• v.20 no.2
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• pp.94-100
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• 2003

We studied electrochemical characteristics of Langmuir-Blodgett(LB) films by using cyclic voltammetry with a three-electrode system. An Ag/AgCl as a reference electrode, a platinum wire as a counter electrode and LB film-coated indium tin oxide(ITO) as a working electrode were used to study electrochemical characteristics at a various concentration of $NaClO_4$ solution. LB films were reduced from initial potential to -1350 mV, continuously oxidized to l650mV and returned to the initial point. The scan rate was l00mV/s. The monolayer surface morphology of the LB film have been measured by Atomic Force Microscope(AFM). As a result, We comfirmed that the microscopic properties of LB film by AFM showed the good orientation of momolayer molecules and the thickness of monolayer was 3.5-4.lnm. The cyclic voltammograms(CV) of the ITO-coated glass showed the peak potentials for the reduction-oxidation reation. LB films of 4-octyl-4'-(5-carboxypentamethyleneoxy) azobenzene(8A5H) / L-${\alpha}$-phosphayidyl choline, dilauroyl(DLPC) seemed to be irreversible process caused by only the oxidation current from the cyclic voltammogram. The current of oxidatation increased at cyclic voltammogram by increasing 8A5H density in LB films. The diffusivity(D) of LB films increased with increasing of a 8A5H amount and was inversely proportional to the concentration of $NaClO_4$ solution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.502-502
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• 2007

Current thin film process using memory device fabrication process use expensive processes such as manufacturing of photo mask, coating of photo resist, exposure, development, and etching. However, direct printing technology has the merits about simple and cost effective processes because inks are directly injective without mask. And also, this technology has the advantage about fabrication of fine pattern line on various substrates such as PCB, FCPB, glass, polymer and so on. In this work, we have fabricated the fine and thick metal pattern line for the electronic circuit board using metal ink contains Ag nano-particles. Metal lines are fabricated by two types of printing methods. One is a conventional printing method which is able to quick fabrication of fine pattern line, but has various difficulties about thick and high resolution DPI(Dot per Inch) pattern lines because of bulge and piling up phenomenon. Another(Second) methods is sequential printing method which has a various merits of fabrication for fine, thick and high resolution pattern lines without bulge. In this work, conductivities of metal pattern line are investigated with respect to printing methods and pattern thickness. As a result, conductivity of thick pattern is about several un.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.396-399
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• 2003

In this paper, the purpose is to develop imaging technique of synchrotron radiation using CMOS image sensor. The detector using hybrid method to be research in this lab was used, in order to increase image signal. We made experiments with 1B2 Whitebeam/microprobe beamline in PAL (Pohang Accelerator Laboratory). Phosphor materials such as ZnS:(Ag,Li), ZnS:(Cu,Al), $Y_2O_2S:Eu$ were produced by spin coating on glass. Synchrotron radiation images were acquired and evaluated from monochromatic light from monochromoator in PAL 1B2line. From obtained object and phantom, MTF was 0.15 in ZnS:(Ag,Li) phosphor, and 0.178 in ZnS:( Cu,Al) at 151p/mm. MTFs were unsystematic because thickness of phosphor and uniformity of surface were not optimized. It's expected to improve MTF and the qualify of images as uniformity's optimized.