• 제목/요약/키워드: Ag sinter

검색결과 7건 처리시간 0.024초

Bonding Temperature Effects of Robust Ag Sinter Joints in Air without Pressure within 10 Minutes for Use in Power Module Packaging

  • Kim, Dongjin;Kim, Seoah;Kim, Min-Su
    • 마이크로전자및패키징학회지
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    • 제29권4호
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    • pp.41-47
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    • 2022
  • Ag sintering technologies have received great attention as it was applied to the inverter of Tesla's electric vehicle Model III. Ag sinter bonding technology has advantages in heat dissipation design as well as high-temperature stability due to the intrinsic properties of the material, so it is useful for practical use of SiC and GaN devices. This study was carried out to understand the sinter joining temperature effect on the robust Ag sintered joints in air without pressure within 10 min. Electroplated Ag finished Cu dies (3 mm × 3 mm × 2 mm) and substrates (10 mm × 10 mm × 2 mm) were introduced, respectively, and nano Ag paste was applied as a bonding material. The sinter joining process was performed without pressure in air with the bonding temperature as a variable of 175 ℃, 200 ℃, 225 ℃, and 250 ℃. As results, the bonding temperature of 175 ℃ caused 13.21 MPa of die shear strength, and when the bonding temperature was raised to 200 ℃, the bonding strength increased by 157% to 33.99 MPa. When the bonding temperature was increased to 225 ℃, the bonding strength of 46.54 MPa increased by about 37% compared to that of 200 ℃, and even at a bonding temperature of 250 ℃, the bonding strength exceeded 50 MPa. The bonding strength of Ag sinter joints was directly influenced by changes in the necking thickness and interfacial connection ratio. In addition, developments in the morphologies of the joint interface and porous structure have a significant effect on displacement. This study is systematically discussed on the relationship between processing temperatures and bonding strength of Ag sinter joints.

Sinter forging으로 제조한 Y-BA-Cu-O/Ag 고온 초전도 복합체의 미세조직과 특성 (A Study on the Microstructure and Properties of Y-BA-Cu-O/Ag composite High $T_{c}$ Superconductor prepared by Sinter-forging Process)

  • 박종현;김병철;송진태
    • 한국재료학회지
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    • 제4권1호
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    • pp.37-43
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    • 1994
  • Y-BA-Cu-O계 고온초전도체의 미세조직을 가공과 열처리로써 제어하여 조직의 배향화와 치밀화를 기하여 높은 임계전류밀도($J_c$)를 갖는 초전도체의 개발을 목적으로sinter forging법으로 Y-BA-Cu-O/Ag 고온초전도복합체를 제조하였다. sinter forging을 통하여 고온 초전도체의 미세조직의 texture화를 가져왔으며, 이 경우 (123)결정립의 C축 방위가 단일축의 압축방향으로 배향화 되었다. 한편, texture의 orientation facter는 고온일수록, 압력이 클수록 크고, 조직의 배향화도 뚜렷하였으며 그에 따라 $J_c$역시 증가하였다. 이러한 결과로 미루어 결정의 배향도는 $J_c$를 좌우하는 중요한 변수라고 사려되었다. 또한 sinter forging 시킨Y-MA-Cu-O/Ag 복합체의 on set온도는 sinter forging온도에 크게 의존치 않았으나, 고온일수록 off set 온도($T_c\;^{zero}$)가 다소 떨어졌다. 한편, 첨가된 Ag는 주고(123)결정입계에 존재하였으며, 이들이 (123)결정립간의 결합을 촉진시켜 임계전류밀도를 크게 향상시켰으며, Y-BA-Cu-O/Ag 복합체의 $J_c$는 2,000 A/$\textrm{cm}^2$ 이상이었다.

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CHARACTERISTICS OF DIE-ATTACH METHOD BY SINTER BONDING USING Ag-40Cu MECHANICALLY ALLOYED PARTICLES

  • WOO LIM CHOI;JONG-HYUN LEE
    • Archives of Metallurgy and Materials
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    • 제64권2호
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    • pp.507-512
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    • 2019
  • Ag and Cu powders were mechanically alloyed using high-energy planetary milling to evaluate the sinter-bonding characteristics of a die-attach paste containing particles of these two representative conductive metals mixed at atomic scale. This resulted in the formation of completely alloyed Ag-40Cu particles of 9.5 ㎛ average size after 3 h. The alloyed particles exhibited antioxidation properties during heating to 225℃ in air; the combination of high pressure and long bonding time at 225℃ enhanced the shear strength of the chip bonded using the particles. Consequently, the chips sinter-bonded at 225℃ and 10 MPa for 10 min exhibited a sufficient strength of 15.3 MPa. However, an increase in bonding temperature to 250℃ was detrimental to the strength, due to excessive oxidation of the alloyed particles. The mechanically alloyed phase in the particle began to decompose into nanoscale Ag and Cu phases above a bonding temperature of 225℃ during heating.

Driving Forces of Silver Nano-porous Sheet Die Bonding at 145 ℃ and 175 ℃ in the Air

  • YehRi Kim;Eunjin Jo;Dongjin Kim
    • 마이크로전자및패키징학회지
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    • 제31권3호
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    • pp.91-98
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    • 2024
  • This study reveals the feasibility and effectiveness of sinter bonding using an Ag nano-porous sheet at the lowest "theoretically" possible temperature of 145 ℃. By uniform pressure of 10 MPa for bonding times of 5 min and 10 min at 145 and 175 ℃, we achieved bonding strengths exceeding approximately 20 MPa with a only 5 min of bonding time at 145 ℃. In particular, it is interesting to note that in the pressure sintering bonding process at 145 ℃, bonding times of 5 and 10 min had no significant difference in strength. Even with a bonding temperature of 175 ℃, the difference in average bonding strength between bonding times of 5 min (i.e., 37.6 MPa) and 10 min (i.e., 43.0 MPa) was only 5 MPa. The bonding strength was fundamentally attributed to the thickness of the Ag sintered neck in the Ag sintered layer. Microstructural analysis revealed that as the bonding temperature increased to 175 ℃, the fraction of CSL Σ3 boundaries within the Ag sintered layer increased, indicating greater coalescence of Ag particles. This study systematically investigated the mechanism of bonding strength in extremely low-temperature pressure Ag sinter bonding, considering the relationship between microstructures and mechanical behaviors.

W/WC계 접점의 전기적 특성에 미치는 첨가물의 영향 (Effect of additives on the electrical properties of W/WC contacts)

  • 신대승;이희웅;변우봉;한세원
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1988년도 추계학술대회 논문집
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    • pp.112-114
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    • 1988
  • W/WC-Cu/Ag contacts of 60wt%-40wt% base and contacts with additives(Ni, Co, C) of 1wt% below were prepared by a press-sinter-infiltrate process to compare with their physical properties and arc erosion characteristics. In physical properties, electrical conductivity of contacts with additive is lower than that of base contacts but hardness is higher. The results of arc test show that the erosion rate of contact with -0.1wt% Ni is decreased.

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Wide-bandgap 전력반도체 패키징을 위한 Ag 소결 다이접합 기술 (Ag Sintering Die Attach Technology for Wide-bandgap Power Semiconductor Packaging)

  • 김민수;김동진
    • 마이크로전자및패키징학회지
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    • 제30권1호
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    • pp.1-16
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    • 2023
  • 전기차용 전력변환모듈의 성능향상 요구와 종래의 Si 전력반도체의 한계 극복을 위해 차세대 전력반도체인 wide-bandgap (WBG) 기반 전력반도체로의 전환이 가속화되고 있다. WBG 전력반도체로의 전환을 위해 전력변환모듈 패키징 소재 역시 높은 고온 내구성을 요구받고 있다. 전력변환모듈 패키징 공정 중 하나인 Ag 소결 다이접합 기술은 종래의 고온용 Pb 솔더링의 대체 기술로 주목받고 있다. 본 논문에서는 Ag 소결 다이접합 기술 관련 최신 연구동향에 대해 소개하고자 한다. 소결 다이접합 공정 조건에 따른 접합부 특성을 비교하고 Ag 소결층의 3차원 이미지 구현에 따른 다공성 Ag 소결 접합부의 물성 측정 방법론에 대해 고찰하였다. 또한 열충격 및 파워사이클 신뢰성 평가 연구동향을 분석하였다.